
Onedimensional Majorana modes are predicated to form in Josephson junctions
based on threedimensional topological insulators (TIs). While observations of
supercurrents in Josephson junctions made on bulkinsulating TI samples are
recently reported, the Fraunhofer patters observed in such topological
Josephson junctions, which sometimes present anomalous features, are still not
well understood. Here we report our study of highly gatetunable topological
Josephson junctions made of one of the most bulkinsulating TI materials,
BiSbTeSe2, and Al. The Fermi level can be tuned by gating across the Dirac
point, and the high transparency of the Al/BiSbTeSe2 interface is evinced by a
high characteristic voltage and multiple Andreev reflections with peak indices
reaching n = 12. Anomalous Fraunhofer patterns with missing lobes were observed
in the entire range of gate voltage. We found that, by employing an advanced
fitting procedure to use the maximum entropy method in a Monte Carlo algorithm,
the anomalous Fraunhofer patterns are explained as a result of inhomogeneous
supercurrent distributions on the TI surface in the junction. Besides
establishing a highly promising fabrication technology, this work clarifies one
of the important open issues regarding topological Josephson junctions.

With the recent discovery of Weyl semimetals, the phenomenon of negative
magnetoresistance (MR) is attracting renewed interest. While small negative MR
can occur due to the suppression of spin scattering or weak localization, large
negative MR is rare in materials, and when it happens, it is usually related to
magnetism. The large negative MR in Weyl semimetals is peculiar in that it is
unrelated to magnetism and comes from chiral anomaly. Here we report that there
is a new mechanism for large negative MR which is not related to magnetism but
is related to disorder. In the newlysynthesized bulkinsulating topological
insulator TlBi$_{0.15}$Sb$_{0.85}$Te$_2$, we observed gigantic negative MR
reaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system.
Supported by numerical simulations, we argue that this phenomenon is likely due
to the Zeeman effect on a barely percolating current path formed in the
disordered bulk. Since disorder can also lead to nonsaturating linear MR in
Ag$_{2+\delta}$Se, the present finding suggests that disorder engineering in
narrowgap systems is useful for realizing gigantic MR in both positive and
negative directions.

A prominent feature of topological insulators (TIs) is the surface states
comprising of spinnondegenerate massless Dirac fermions. Recent technical
advances have made it possible to address the surface transport properties of
TI thin films while tuning the Fermi levels of both top and bottom surfaces
across the Dirac point by electrostatic gating. This opened the window for
studying the spinnondegenerate Dirac physics peculiar to TIs. Here we report
our discovery of a novel planar Hall effect (PHE) from the TI surface, which
results from a hithertounknown resistivity anisotropy induced by an inplane
magnetic field. This effect is observed in dualgated devices of
bulkinsulating Bi$_{2x}$Sb$_{x}$Te$_{3}$ thin films, in which both top and
bottom surfaces are gated. The origin of PHE is the peculiar
timereversalbreaking effect of an inplane magnetic field, which
anisotropically lifts the protection of surface Dirac fermions from
backscattering. The key signature of the fieldinduced anisotropy is a strong
dependence on the gate voltage with a characteristic twopeak structure near
the Dirac point which is explained theoretically using a selfconsistent
Tmatrix approximation. The observed PHE provides a new tool to analyze and
manipulate the topological protection of the TI surface in future experiments.

The chargecurrentinduced spin polarization is a key property of topological
insulators for their applications in spintronics. However, topological surface
states are expected to give rise to only one type of spin polarization for a
given current direction, which has been a limiting factor for spin
manipulations. Here we report that in devices based on the bulkinsulating
topological insulator BiSbTeSe2, an unexpected switching of spin polarization
was observed upon changing the chemical potential. The spin polarization
expected from the topological surface states was detected in a heavily
electrondoped device, whereas the opposite polarization was reproducibly
observed in devices with low carrier densities. We propose that the latter type
of spin polarization stems from topologicallytrivial twodimensional states
with a large Rashba spin splitting, which are caused by a strong band bending
at the surface of BiSbTeSe2 beneath the ferromagnetic electrode used as a spin
detector. This finding paves the way for realizing the "spin transistor"
operation in future topological spintronic devices.

We have performed angleresolved photoemission spectroscopy on Tl0.5Bi2Te3, a
possible topological superconductor derived from Bi2Te3. We found that the bulk
Fermi surface consists of multiple threedimensional hole pockets surrounding
the Z point, produced by the direct hole doping into the valence band. The
Diraccone surface state is well isolated from the bulk bands, and the surface
chemical potential is variable in the entire bandgap range. Tl0.5Bi2Te3 thus
provides an excellent platform to realize twodimensional topological
superconductivity through a proximity effect from the superconducting bulk.
Also, the observed Fermisurface topology provides a concrete basis for
constructing theoretical models for bulk topological superconductivity in
holedoped topological insulators.

Bulk superconductivity has been discovered in Tl_{0.6}Bi_{2}Te_{3}, which is
derived from the topological insulator Bi2Te3. The superconducting volume
fraction of up to 95% (determined from specific heat) with Tc of 2.28 K was
observed. The carriers are ptype with the density of ~1.8 x 10^{20} cm^{3}.
Resistive transitions under magnetic fields point to an unconventional
temperature dependence of the upper critical field B_{c2}. The crystal
structure appears to be unchanged from Bi2Te3 with a shorter clattice
parameter, which, together with the Rietveld analysis, suggests that Tl ions
are incorporated but not intercalated. This material is an interesting
candidate of a topological superconductor which may be realized by the strong
spinorbit coupling inherent to topological insulators.

We have synthesized a new ferromagnetic topological insulator by doping Cr to
the ternary topologicalinsulator material TlSbTe2. Single crystals of
Tl_{1x}Cr_{x}SbTe2 were grown by a melting method and it was found that Cr can
be incorporated into the TlSbTe2 matrix only within the solubility limit of
about 1%. The Curie temperature \theta_c was found to increase with the Cr
content but remained relatively low, with the maximum value of about 4 K. The
easy axis was identified to be the caxis and the saturation moment was 2.8
\mu_B (Bohr magneton) at 1.8 K. The inplane resistivity of all the samples
studied showed metallic behavior with ptype carriers. Shubnikovde Hass (SdH)
oscillations were observed in samples with the Crdoping level of up to 0.76%.
We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no
ferromagnetism was observed in Crdoped TlBiTe2 crystals within the solubility
limit of Cr which turned out to be also about 1%.

We have synthesized Pb_{5}Bi_{24}Se_{41}, which is a new member of the
(PbSe)_{5}(Bi2Se3)_{3m} homologous series with m = 4. This series of compounds
consist of alternating layers of the topological insulator Bi2Se3 and the
ordinary insulator PbSe. Such a naturallyformed heterostructure has recently
been elucidated to give rise to peculiar quasitwodimensional topological
states throughout the bulk, and the discovery of Pb_{5}Bi_{24}Se_{41} expands
the tunability of the topological states in this interesting homologous series.
The trend in the resistivity anisotropy in this homologous series suggests an
important role of hybridization of the topological states in the outofplane
transport.

The tunability of the chemical potential for a wide range encompassing the
Dirac point is important for many future devices based on topological
insulators. Here we report a method to fabricate highly efficient top gates on
epitaxially grown (Bi_{1x}Sb_x)2Te3 topological insulator thin films without
degrading the film quality. By combining an in situ deposited Al2O3 capping
layer and a SiN_x dielectric layer deposited at low temperature, we were able
to protect the films from degradation during the fabrication processes. We
demonstrate that by using this top gate, the carriers in the top surface can be
efficiently tuned from n to ptype. We also show that magnetotransport
properties give evidence for decoupled transport through top and bottom
surfaces for the entire range of gate voltage, which is only possible in truly
bulkinsulating samples.

The topological crystalline insulator SnTe has been grown epitaxially on a
Bi2Te3 buffer layer by molecular beam epitaxy. In a 30nmthick SnTe film, p
and ntype carriers are found to coexist, and Shubnikovde Haas oscillation
data suggest that the ntype carriers are Dirac fermions residing on the SnTe
(111) surface. This transport observation of the topological surface state in a
ptype topological crystalline insulator became possible due to a downward band
bending on the free SnTe surface, which appears to be of intrinsic origin.

We report superconducting properties of AgSnSe2 which is a conventional
typeII superconductor in the very dirty limit due to intrinsically strong
electron scatterings. While this material is an isotropic threedimensional
(3D) superconductor with a notsoshort coherence length where strong vortex
fluctuations are NOT expected, we found that the magneticfieldinduced
resistive transition at fixed temperatures becomes increasingly broader toward
zero temperature and, surprisingly, that this broadened transition is taking
place largely ABOVE the upper critical field determined thermodynamically from
the specific heat. This result points to the existence of an anomalous metallic
state possibly caused by quantum phase fluctuations in a stronglydisordered 3D
superconductor.

A combined neutron and xray diffraction study of TbBaFe2O5 reveals a rare
checkerboard to charge ordering transition. TbBaFe2O5 is a mixed valent
compound where Fe2+/Fe3+ ions are known to arrange into a stripe chargeordered
state below TV = 291 K, that consists of alternating Fe2+/Fe3+ stripes in the
basal plane running along the b direction. Our measurements reveal that the
stripe chargeordering is preceded by a checkerboard chargeordered phase
between TV < T < T* = 308 K. The checkerboard ordering is stabilized by
intersite coulomb interactions which give way to a stripe state stabilized by
orbital ordering.

We have performed angleresolved photoemission spectroscopy of the strongly
spinorbit coupled lowcarrier density superconductor Sn1xInxTe (x = 0.045) to
elucidate the electronic states relevant to the possible occurrence of
topological superconductivity recently reported for this compound from
pointcontact spectroscopy. The obtained energyband structure reveals a small
holelike Fermi surface centered at the L point of the bulk Brillouin zone,
together with a signature of a topological surface state which indicates that
this superconductor is essentially a doped topological crystalline insulator
characterized by band inversion and mirror symmetry. A comparison of the
electronic states with a bandnoninverted superconductor possessing a similar
Fermi surface structure, Pb1xTlxTe, suggests that the anomalous behavior in
the superconducting state of Sn1xInxTe is likely to be related to the peculiar
orbital characteristics of the bulk valence band and/or the presence of a
topological surface state.

The existence of topological superconductors preserving timereversal
symmetry was recently predicted, and they are expected to provide a solidstate
realization of itinerant massless Majorana fermions and a route to topological
quantum computation. Their first concrete example, CuxBi2Se3, was discovered
last year, but the search for new materials has so far been hindered by the
lack of guiding principle. Here, we report pointcontact spectroscopy
experiments showing that the lowcarrierdensity superconductor
Sn_{1x}In_{x}Te is accompanied with surface Andreev bound states which, with
the help of theoretical analysis, give evidence for oddparity pairing and
topological superconductivity. The present and previous finding of topological
superconductivity in Sn_{1x}In_{x}Te and CuxBi2Se3 demonstrates that
oddparity pairing favored by strong spinorbit coupling is a common underlying
mechanism for materializing topological superconductivity.

The massless Dirac fermions residing on the surface of threedimensional
topological insulators are protected from backscattering and cannot be
localized by disorder, but such protection can be lifted in ultrathin films
when the threedimensionality is lost. By measuring the Shubnikovde Haas
oscillations in a series of highquality Bi2Se3 thin films, we revealed a
systematic evolution of the surface conductance as a function of thickness and
found a striking manifestation of the topological protection: The metallic
surface transport abruptly diminishes below the critical thickness of ~6 nm, at
which an energy gap opens in the surface state and the Dirac fermions become
massive. At the same time, the weak antilocalization behavior is found to
weaken in the gapped phase due to the loss of \pi Berry phase.

We report the effect of Sn doping on the transport properties of the
topological insulator Bi_{2}Te_{2}Se studied in a series of
Bi_{2x}Sn_{x}Te_{2}Se crystals with 0 \leq x \leq 0.02. The undoped
stoichiometric compound (x = 0) shows an ntype metallic behavior with its
Fermi level pinned to the conduction band. In the doped compound, it is found
that Sn acts as an acceptor and leads to a downshift of the Fermi level. For x
\geq 0.004, the Fermi level is lowered into the bulk forbidden gap and the
crystals present a resistivity considerably larger than 1 Ohmcm at low
temperatures. In those crystals, the hightemperature transport properties are
essentially governed by thermallyactivated carriers whose activation energy is
95125 meV, which probably signifies the formation of a Snrelated impurity
band. In addition, the surface conductance directly obtained from the
Shubnikovde Haas oscillations indicates that a surfacedominated transport can
be achieved in samples with several um thickness.

To optimize the bulkinsulating behavior in the topological insulator
materials having the tetradymite structure, we have synthesized and
characterized singlecrystal samples of Bi_(2x)Sb_(x)Te_(3y)Se_(y) (BSTS)
solid solution at various compositions. We have elucidated that there are a
series of "intrinsic" compositions where the acceptors and donors compensate
each other and present a maximally bulkinsulating behavior. At such
compositions, the resistivity can become as large as several Ohmcm at low
temperature and one can infer the role of the surfacetransport channel in the
nonlinear Hall effect. In particular, the composition of Bi1.5Sb0.5Te1.7Se1.3
achieves the lowest bulk carrier density and appears to be best suited for
surface transport studies.

We present a defectengineering strategy to optimize the transport properties
of the topological insulator Bi2Se3 to show a high bulk resistivity and clear
quantum oscillations. Starting with a ptype Bi2Se3 obtained by combining Cd
doping and a Serich crystalgrowth condition, we were able to observe a
ptontype conversion upon gradually increasing the Se vacancies by post
annealing. With the optimal annealing condition where a high level of
compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we
observed twodimensional Shubnikovde Haas oscillations composed of multiple
frequencies in magnetic fields below 14 T.

We show that in the new topologicalinsulator compound
Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaceddominated transport
where the surface channel contributes up to 70% of the total conductance.
Furthermore, it was found that in this material the transport properties
sharply reflect the time dependence of the surface chemical potential,
presenting a sign change in the Hall coefficient with time. We demonstrate that
such an evolution makes us observe both Dirac holes and electrons on the
surface, which allows us to reconstruct the surface band dispersion across the
Dirac point.

Topological insulators are predicted to present novel surface transport
phenomena, but their experimental studies have been hindered by a metallic bulk
conduction that overwhelms the surface transport. We show that a new
topological insulator, Bi2Te2Se, presents a high resistivity exceeding 1 Ohmcm
and a variablerange hopping behavior, and yet presents Shubnikovde Haas
oscillations coming from the surface Dirac fermions. Furthermore, we have been
able to clarify both the bulk and surface transport channels, establishing a
comprehensive understanding of the transport in this material. Our results
demonstrate that Bi2Te2Se is the best material to date for studying the surface
quantum transport in a topological insulator.

We present detailed data on the unusual angulardependent magnetoresistance
oscillation phenomenon recently discovered in a topological insulator
Bi_{0.91}Sb_{0.09}. Direct comparison of the data taken before and after
etching the sample surface gives compelling evidence that this phenomenon is
essentially originating from a surface state. The symmetry of the oscillations
suggests that it probably comes from the (111) plane, and obviously a new
mechanism, such as a coupling between the surface and the bulk states, is
responsible for this intriguing phenomenon in topological insulators.

The angulardependent magnetoresistance and the Shubnikovde Haas
oscillations are studied in a topological insulator Bi_{0.91}Sb_{0.09}, where
the twodimensional (2D) surface states coexist with a threedimensional (3D)
bulk Fermi surface (FS). Two distinct types of oscillatory phenomena are
discovered in the angulardependence: The one observed at lower fields is shown
to originate from the surface state, which resides on the (2\bar{1}\bar{1})
plane, giving a new way to distinguish the 2D surface state from the 3D FS. The
other one, which becomes prominent at higher fields, probably comes from the
(111) plane and is obviously of unknown origin, pointing to new physics in
transport properties of topological insulators.

We measured magnetotransport properties of PbS single crystals which exhibit
the quantum linear magnetoresistance (MR) as well as the static skin effect
that creates a surface layer of additional conductivity. The Shubnikovde Haas
oscillations in the longitudinal MR signify the peculiar role of spinorbit
coupling. In the angulardependent MR, sharp peaks are observed when the
magnetic field is slightly inclined from the longitudinal configuration, which
is totally unexpected for a system with nearly spherical Fermi surface and
points to an intricate interplay between the spinorbit coupling and the
conducting surface layer in the quantum transport regime.

We observed pronounced angulardependent magnetoresistance (MR) oscillations
in a highquality Bi2Se3 single crystal with the carrier density of 5x10^18
cm^3, which is a topological insulator with residual bulk carriers. We show
that the observed angulardependent oscillations can be well simulated by using
the parameters obtained from the Shubnikovde Haas oscillations, which
clarifies that the oscillations are solely due to the bulk Fermi surface. By
completely elucidating the bulk oscillations, this result paves the way for
distinguishing the twodimensional surface state in angulardependent MR
studies in Bi2Se3 with much lower carrier density. Besides, the present result
provides a compelling demonstration of how the Landau quantization of an
anisotropic threedimensional Fermi surface can give rise to pronounced
angulardependent MR oscillations.

The magnetic properties of GdBaMn_{2}O_{5.0}, which exhibits charge ordering,
are studied from 2 to 400 K using single crystals. In a small magnetic field
applied along the easy axis, the magnetization M shows a temperatureinduced
reversal which is sometimes found in ferrimagnets. In a large magnetic field,
on the other hand, a sharp change in the slope of M(T) coming from an unusual
turnabout of the magnetization of the Mn sublattices is observed. Those
observations are essentially explained by a molecular field theory which
highlights the role of delicate magnetic interactions between Gd^{3+} ions and
the antiferromagnetically coupled Mn^{2+}/Mn^{3+} sublattices.