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Based on the idea and the provided source code of Andrej Karpathy (arxiv-sanity)
2:3 1:1 3:2
  • Microscopic simulation of xenon-based optical TPCs in the presence of molecular additives (1705.09481)

    C.D.R. Azevedo, D. Gonzalez-Diaz, S. F. Biagi, C.A.B. Oliveira, C.A.O. Henriques, J. Escada, F. Monrabal, J.J. Gómez-Cadenas, V. Álvarez, J. M. Benlloch-Rodríguez F.I.G.M. Borges, A. Botas, S. Cárcel, J. V. Carrión, S. Cebrián, C.A.N. Conde, J. Díaz, M. Diesburg, R. Esteve, R. Felkai, L.M.P. Fernandes, P. Ferrario, A.L. Ferreira, E.D.C. Freitas, A. Goldschmidt, R.M. Gutiérrez, J. Hauptman, A. I. Hernandez, J.A. Hernando Morata, V. Herrero, B.J.P. Jones, L. Labarga, A. Laing, P. Lebrun, I. Liubarsky, N. Lopez-March, M. Losada, J. Martín-Albo, A. Martínez, A. D. McDonald, C.M.B. Monteiro, F.J. Mora, L.M. Moutinho, J. Muñoz Vidal, M. Musti, M. Nebot-Guinot, P. Novella, D. Nygren, B. Palmeiro, A. Para, J. Pérez, M. Querol, J. Renner, L. Ripoll, J. Rodríguez, L. Rogers, F.P. Santos, J.M.F. dos Santos, L. Serra, D. Shuman, A. Simón, C. Sofka, M. Sorel, T. Stiegler, J.F. Toledo, J. Torrent, Z. Tsamalaidze, J.F.C.A. Veloso, R. Webb, J.T. White, N. Yahlali
    July 1, 2017 physics.ins-det
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    We introduce a simulation framework for the transport of high and low energy electrons in xenon-based gaseous optical time projection chambers (OTPCs). The simulation relies on elementary cross sections (electron-atom and electron-molecule) and incorporates, in order to compute the gas scintillation, the reaction/quenching rates (atom-atom and atom-molecule) of the first 41 excited states of xenon and the relevant associated excimers, together with their radiative cascade. The results compare positively with observations made in pure xenon and its mixtures with CO$_2$ and CF$_4$ in a range of pressures from 0.1 to 10~bar. This work sheds some light on the elementary processes responsible for the primary and secondary xenon-scintillation mechanisms in the presence of additives, that are of interest to the OTPC technology.
  • Direct observation of electron emission as a result of a VVV Auger transition in the valence band of Graphene (1610.09575)

    V. A. Chirayath, V. Callewaert, M. D. Chrysler, A. J. Fairchild, R. W. Gladen, A. D. Mcdonald, S. K. Imam, K. Shastry, A. R. Koymen, R. Saniz, B. Barbiellini, K. Rajeshwar, B. Partoens, A. H. Weiss
    Nov. 4, 2016 cond-mat.mes-hall
    We report the first direct observation of electron emission into the vacuum as a result of a VVV Auger transition resulting from the relaxation of a deep hole in the valence band. A beam of low energy (<1.25eV) positrons was used to deposit positrons onto the surface of samples consisting of single layer graphene, multi-layer graphene and graphite. The distribution of electrons emitted from the samples as a result of the annihilation of the positron showed peak extending up to ~12 eV with a maximum at ~4eV. The observed peak was ~17 times larger than the previously observed annihilation induced C KVV peak. An analysis based upon a density functional theory calculation of the positron annihilation rates indicates that the width and intensity of the peak is consistent with electron emission resulting from VVV Auger transition excited by the annihilation of valence band electrons. Good agreement was found between the data from the single layer graphene on Cu surface with a theoretical line shape found from a self-folding of the density of states for a free standing graphene layer. The agreement between the theoretical and measured intensities for the KVV and VVV transitions indicates that the branching ratio for holes to decay via an Auger transition is nearly the same in both cases (i.e. close to 100%). Our results suggest the possibility of using annihilation induced VVV Auger spectroscopy to study the properties of the local density of states and the hole decay processes in materials in which the valence band width exceeds the work function.
  • Single Molecule Fluorescence Imaging as a Technique for Barium Tagging in Neutrinoless Double Beta Decay (1609.04019)

    B. J. P. Jones, A. D. McDonald, D. R. Nygren
    Sept. 20, 2016 hep-ex, physics.ins-det
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    Background rejection is key to success for future neutrinoless double beta decay experiments. To achieve sensitivity to effective Majorana lifetimes of $\sim10^{28}$ years, backgrounds must be controlled to better than 0.1 count per ton per year, beyond the reach of any present technology. In this paper we propose a new method to identify the birth of the barium daughter ion in the neutrinoless double beta decay of $^{136}$Xe. The method adapts Single Molecule Fluorescent Imaging, a technique from biochemistry research with demonstrated single ion sensitivity. We explore possible SMFI dyes suitable for the problem of barium ion detection in high pressure xenon gas, and develop a fiber-coupled sensing system with which we can detect the presence of bulk Ba$^{++}$ ions remotely. We show that our sensor produces signal-to-background ratios as high as 85 in response to Ba$^{++}$ ions when operated in aqueous solution. We then describe the next stage of this R\&D program, which will be to demonstrate chelation and fluorescence in xenon gas. If a successful barium ion tag can be developed using SMFI adapted for high pressure xenon gas detectors, the first essentially zero background, ton-scale neutrinoless double beta decay technology could be realized.