• CuCrS2, a Heisenberg antiferromagnet with layered edge sharing triangular lattice, exhibits a spiral magnetic order. Dielectric (E) and polarization studies show magnetoelectric (ME) coupling at Neel temperature (T_N=38 K) where simultaneous dielectric and magnetic long range order occur. The compound shows a diffused ferroelectric (FE) transition and slow relaxation dynamics above T_N, indicative of relaxor FE behavior. Interestingly, memory effect and magnetic field induced rejuvenation are also observed in E, establishing cooperative glassy dynamics and ME coupling even above T_N. We discuss the role of geometrical frustration and metal ligand hybridization for these unusual properties.
  • Magnetization, magnetoresistance, and magnetodielectric measurements have been carried out on the half doped charge ordered manganite, Pr_0.5Ca_0.5MnO_3. The low temperature state is found to be strongly dependent on the oxygen stoichiometry whereas the high temperature state remains almost unaltered. A disorder driven phase separation in the low temperature state is noticed in the magnetic, magnetoresistance, and dielectric measurements which is attributed to the oxygen deficiency in the compound. A considerable magnetodielectric (MD) effect is noticed close to room temperature at 280 K which is fascinating for technological applications. The strongest MD effect observed in between 180 K and 200 K is found to be uncorrelated with magnetoresistance but it is suggested to be due to a number of intricate processes occuring in this temperature range which includes paramagnetic to antiferromagnetic transition, incommensurate to commensurate charge ordering and orbital ordering. The strongest MD effect seems to emerge from the high sensitivity of the incommensurate state to the external perturbation such as external magnetic field. The results propose the possible magnetoelectric coupling in the charge ordered compound.
  • Bulk dc resistivity and dielectric constant measurements with temperature and frequency have been performed in LaMn_{1-x}Fe_xO_3 (0 <= x <= 1.0) as a result of Fe substitution both for the as-synthesized and oxygen annealed samples. Temperature dependence of real part of dielectric constant at different frequencies show a frequency and temperature independent value (epsilon_s) at low temperature for x >= 0.15 where epsilon_0 rises with x reaching a maximum at x = 0.5 and then it decreases sharply at x = 0.70 showing a further increasing trend with the further increase in x. The sharp drop of epsilon_s at x = 0.70 is correlated with the structural change from rhombohedral to orthorhombic structure. A considerable increase of epsilon_s ~ 43% is observed for an increase of x from 0.15 to 0.50. Furthermore, epsilon_s is increased considerably (up to ~ 17% at x = 0.5) due to the oxygen annealing for x <= 0.50. The low temperature resistivities satisfying Variable Range Hopping model are found to be related with the increase of epsilon_s with x for x <= 0.50. The analysis of the complex impedance and modulus planes at low temperature indicates the electrical inhomogeneities in the grain interior of the compounds.
  • Dc and ac transport properties as well as electric modulus spectra have been investigated for the samples LaMn$_{1-x}$Fe$_{x}$O$_3$ with compositions 0 $\leq x \leq$ 1.0. The bulk dc resistivity shows a temperature variation consistent with the variable range hopping mechanism at low temperature and Arrhenius mechanism at high temperatures. The ac conductivity has been found to follow a power law behavior at a limited temperature and frequency region where Anderson-localization plays a significant role in the transport mechanism for all the compositions. At low temperatures large dc resistivities and dielectric relaxation behavior for all the compositions are consistent with the polaronic nature of the charge carriers. Scaling of the modulus spectra shows that the charge transport dynamics is independent of temperature for a particular composition but depends strongly on different compositions possibly due to different charge carrier concentrations and structural properties.