
Pointcontact spectroscopy of several nonsuperconducting topological
materials reveals a low temperature phase transition that is characterized by a
BardeenCooperSchrieffertype of criticality. We find such a behavior of
differential conductance for topological surfaces of nonmagnetic and magnetic
Pb$_{1yx}$Sn$_y$Mn$_x$Te. We examine a possible contribution from
superconducting nanoparticles, and show to what extent our data are consistent
with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations
to a collective state adjacent to atomic steps at topological surfaces.

We demonstrate that the metallic topological surface states wrap on all sides
the 3D topological crystalline insulator SnTe. This is achieved by studying
oscillatory quantum magnetotransport and magnetization at tilted magnetic
fields which enables us to observe simultaneous contributions from neighbouring
sample sides. Taking into account pinning of the Fermi energy by the SnTe
reservoir we successfully describe theoretically the de Haasvan Alphen
oscillations of magnetization. The determined \piBerry phase of surface states
confirms their Dirac fermion character. We independently observe oscillatory
contributions of magnetotransport and magnetization originating from the bulk
SnTe reservoir of high hole density. It is concluded that the bulk and surface
Landau states exist in parallel. Our main result that the bulk reservoir is
surrounded on all sides by the topological surface states has an universal
character.

The transverse Nernst Ettingshausen (NE) effect and electron mobility in
Pb$_{1x}$Sn$_x$Se alloys are studied experimentally and theoretically as
functions of temperature and chemical composition in the vicinity of vanishing
energy gap $E_g$. The study is motivated by the recent discovery that, by
lowering the temperature, one can change the band ordering from trivial to
nontrivial one in which the topological crystalline insulator states appear at
the surface. Our work presents several new aspects. It is shown experimentally
and theoretically that the bulk NE effect has a maximum when the energy gap
$E_g$ of the mixed crystal goes through zero value. This result contradicts the
claim made in the literature that the NE effect changes sign when the gap
vanishes. We successfully describe $dc$ transport effects in the situation of
extreme band's nonparabolicity which, to the best of our knowledge, has never
been tried before. A situation is reached in which both twodimensional bands
(topological surface states) and threedimensional bands are linear in electron
\textbf{k} vector. Various scattering modes and their contribution to transport
phenomena in Pb$_{1x}$Sn$_x$Se are analyzed. As the energy gap goes through
zero, some transport integrals have a singular (nonphysical) behaviour and we
demonstrate how to deal with this problem by introducing damping.

Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for
thin layers of IVVI diluted magnetic semiconductor Ge1xMn xTe with x=0.14
grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe
buffer. Analysis of the angular dependence of the FMR resonant field reveals
that an easy magnetization axis is located near to the normal to the layer
plane and is controlled by two crystal distortions present in these
rhombohedral Ge1xMnxTe layers: the ferroelectric distortion with the relative
shift of cation and anion sublattices along the [111] crystal direction and
the biaxial inplane, compressive strain due to thermal mismatch.

Since the advent of topological insulators hosting symmetryprotected Dirac
surface states, efforts have been made to gap these states in a controllable
way. A new route to accomplish this was opened up by the discovery of
topological crystalline insulators (TCIs) where the topological states are
protected by real space crystal symmetries and thus prone to gap formation by
structural changes of the lattice. Here, we show for the first time a
temperaturedriven gap opening in Dirac surface states within the TCI phase in
(Pb,Sn)Se. By using angleresolved photoelectron spectroscopy, the gap
formation and mass acquisition is studied as a function of composition and
temperature. The resulting observations lead to the addition of a temperature
and compositiondependent boundary between massless and massive Dirac states in
the topological phase diagram for (Pb,Sn)Se (001). Overall, our results
experimentally establish the possibility to tune between a massless and massive
topological state on the surface of a topological system.

The recent discovery of a topological phase transition in IVVI narrowgap
semiconductors has revitalized the decadesold interest in the bulk band
inversion occurring in these materials. Here we systematically study the (001)
surface states of Pb{1x}Sn{x}Se mixed crystals by means of angleresolved
photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T
>= 9 K. Using the surfacestate observations, we monitor directly the
topological phase transition in this solid solution and gain valuable
information on the evolution of the underlying fundamental band gap of the
system. In contrast to common model expectations, the bandgap evolution
appears to be nonlinear as a function of the studied parameters, resulting in
the measuring of a discontinuous band inversion process. This finding signifies
that the anticipated gapless bulk state is in fact not a stable configuration
and that the topological phase transition therefore exhibits features akin to a
firstorder transition.

We present angle resolved photoemission spectroscopy measurements of the
surface states on insitu grown (111) oriented films of Pb$_{1x}$Sn$_{x}$Se, a
three dimensional topological crystalline insulator. We observe surface states
with Diraclike dispersion at $\bar{\Gamma}$ and $\bar{M}$ in the surface
Brillouin zone, supporting recent theoretical predictions for this family of
materials. We study the parallel dispersion isotropy and Diracpoint binding
energy of the surface states, and perform tightbinding calculations to support
our findings. The relative simplicity of the growth technique is encouraging,
and suggests a clear path for future investigations into the role of strain,
vicinality and alternative surface orientations in (Pb,Sn)Se compounds.

Topological insulators are a novel class of quantum materials in which
timereversal symmetry, relativistic (spinorbit) effects and an inverted band
structure result in electronic metallic states on the surfaces of bulk
crystals. These helical states exhibit a Diraclike energy dispersion across
the bulk bandgap, and they are topologically protected. Recent theoretical
proposals have suggested the existence of topological crystalline insulators, a
novel class of topological insulators in which crystalline symmetry replaces
the role of timereversal symmetry in topological protection [1,2]. In this
study, we show that the narrowgap semiconductor Pb(1x)Sn(x)Se is a
topological crystalline insulator for x=0.23. Temperaturedependent
magnetotransport measurements and angleresolved photoelectron spectroscopy
demonstrate that the material undergoes a temperaturedriven topological phase
transition from a trivial insulator to a topological crystalline insulator.
These experimental findings add a new class to the family of topological
insulators. We expect these results to be the beginning of both a considerable
body of additional research on topological crystalline insulators as well as
detailed studies of topological phase transitions.

We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the
newly discovered topologicalcrystallineinsulator (TCI) phase as well as the
corresponding topologically trivial state above the bandgapinversion
temperature. Our calculations predict not only metallic surface states with a
nontrivial chiral spin structure for the TCI case, but also nonmetallic
(gapped) surface states with nonzero spin polarization when the system is a
normal insulator. For both phases, angle and spinresolved photoelectron
spectroscopy measurements provide conclusive evidence for the formation of
these (001) surface states in Pb_{0.73}Sn_{0.27}Se, as well as for their chiral
spin structure.

We present the studies of magnetic properties of Ge/1x/Cr/x/Te diluted
magnetic semiconductor with changeable chemical composition 0.016 \leq x \leq
0.061. A spinglass state (at T \leq 35 K) for x = 0.016 and 0.025 and a
ferromagnetic phase (at T < 60 K) for x \geq 0.030 are observed. The long range
carriermediated magnetic interactions are found to be responsible for the
observed magnetic ordering for x < 0.045, while for x \geq 0.045 the spinodal
decomposition of Cr ions leads to a maximum and decrease of the Curie
temperature, TC, with increasing x. The calculations based on spin waves model
are able to reproduce the observed magnetic properties at a homogeneous limit
of Cr alloying, e.g. x < 0.04, and prove that carrier mediated
RudermanKittelKasuyaYosida (RKKY) interaction is responsible for the
observed magnetic states. The value of the Crhole exchange integral, Jpd,
estimated via fitting of the experimental results with the theoretical model,
is in the limits 0.77...0.88 eV.