
Halffilled Landau levels host an emergent Fermiliquid which displays an
instability towards pairing, culminating in a gapped evendenominator
fractional quantum Hall ground state. While this pairing may be probed by
tuning the polarization of carriers in competing orbital and spin degrees of
freedom, sufficiently high quality platforms offering such tunability remain
few. Here we explore the ground states at filling factor $\nu$ = 5/2 in
ZnObased twodimensional electron systems through a forced intersection of
opposing spin branches of Landau levels taking quantum numbers $N$ = 1 and 0.
We reveal a cascade of phases with distinct magnetotransport features including
a gapped phase polarized in the $N$ = 1 level and a compressible phase in N =
0, along with an unexpected Fermiliquid, a second gapped, and a strongly
anisotropic nematiclike phase at intermediate polarizations when the levels
are near degeneracy. The phase diagram is produced by analyzing the proximity
of the intersecting levels and highlights the excellent reproducibility and
controllability ZnO offers for exploring exotic fractionalized electronic
phases.

We report on the successful synthesis of highly conductive PdCoO2 ultrathin
films on Al2O3 (0001) by pulsed laser deposition. The thin films grow along the
caxis of the layered delafossite structure of PdCoO2, corresponding to the
alternating stacking of conductive Pd layers and CoO2 octahedra. The
thicknessdependent transport measurement reveals that each Pd layer has a
homogeneous sheet conductance as high as 5.5 mS in the samples thicker than the
critical thickness of 2.1 nm. Even at the critical thickness, high conductivity
exceeding 104 Scm1 is achieved. Optical transmittance spectra exhibit high
optical transparency of PdCoO2 thin films particularly in the nearinfrared
region. The concomitant high values of electrical conductivity and optical
transmittance make PdCoO2 ultrathin films as promising transparent electrodes
for triangularlatticebased materials.

Simultaneous transport and scanning nanoSQUIDontip magnetic imaging studies
in Cr(Bi,Sb)$_2$Te$_3$ modulationdoped films reveal the presence of
superparamagnetic order within the quantum anomalous Hall regime. In contrast
to the expectation that a longrange ferromagnetic order is required for
establishing the quantum anomalous Hall state, superparamagnetic dynamics of
weakly interacting nanoscale magnetic islands is observed both in the plateau
transition regions as well as within the fully quantized C=$\pm$1 Chern
plateaus. Modulation doping of the topological insulator films is found to give
rise to significantly larger superparamagnetic islands as compared to uniform
magnetic doping, evidently leading to enhanced robustness of the quantum
anomalous Hall effect. Nonetheless, even in this more robust quantum state,
attaining full quantization of transport coefficients requires magnetic
alignment of at least 95% of the superparamagnetic islands. The
superparamagnetic order is also found within the incipient C=0 zero Hall
plateau, which may host an axion state if the top and bottom magnetic layers
are magnetized in opposite directions. In this regime, however, a significantly
lower level of island alignment is found in our samples, hindering the
formation of the axion state. Comprehension and control of superparamagnetic
dynamics is thus a key factor in apprehending the fragility of the quantum
anomalous Hall state and in enhancing the endurance of the different quantized
states to higher temperatures for utilization of robust topological protection
in novel devices.

We report on magnetotransport properties of a MgZnO/ZnO heterostructure
subjected to weak direct currents. We find that in the regime of overlapping
Landau levels, the differential resistivity acquires a quantum correction
proportional to both the square of the current and the Dingle factor. The
analysis shows that the correction to the differential resistivity is dominated
by a currentinduced modification of the electron distribution function and
allows us to access both quantum and inelastic scattering rates.

Exploration of novel electromagnetic phenomena is a subject of great interest
in topological quantum materials. One of the unprecedented effects to be
experimentally verified is topological magnetoelectric (TME) effect originating
from an unusual coupling of electric and magnetic fields in materials. A
magnetic heterostructure of topological insulator (TI) hosts such an exotic
magnetoelectric coupling and can be expected to realize the TME effect as an
axion insulator. Here we designed a magnetic TI with tricolor structure where a
nonmagnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic
Crdoped (Bi, Sb)2Te3 and a hard ferromagnetic Vdoped (Bi, Sb)2Te3.
Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall
conductivity plateaus, which are a hallmark of the axion insulator state, in a
wide range of magnetic field between the coercive fields of Cr and Vdoped
layers. The resistance of the axion insulator state reaches as high as 10^9
ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon
the transition from the QAH state. The tricolor structure of TI may not only be
an ideal arena for the topologically distinct phenomena, but also provide
magnetoresistive applications for advancing dissipationless topological
electronics.

The electronic orders in magnetic and dielectric materials form the domains
with different signs of order parameters. The control of configuration and
motion of the domain walls (DWs) enables gigantic, nonvolatile responses
against minute external fields, forming the bases of contemporary electronics.
As an extension of the DW function concept, we realize the onedimensional
quantized conduction on the magnetic DWs of a topological insulator (TI). The
DW of a magnetic TI is predicted to host the chiral edge state (CES) of
dissipationless nature when each magnetic domain is in the quantum anomalous
Hall state. We design and fabricate the magnetic domains in a magnetic TI film
with the tip of the magnetic force microscope, and clearly prove the existence
of the chiral onedimensional edge conduction along the prescribed DWs. The
proofofconcept devices based on the reconfigurable CES and LandauerButtiker
formalism are exemplified for multipledomain configurations with the
welldefined DW channels.

For the innovation of spintronic technologies, Dirac materials, in which the
lowenergy excitation is described as relativistic Dirac fermions, are one of
the most promising systems, because of the fascinating magnetotransport
associated with the extremely high mobility. To incorporate Dirac fermions into
spintronic applications, their quantum transport phenomena are desired to be
manipulated to a large extent by magnetic order in a solid. We here report a
bulk halfinteger quantum Hall effect in a layered antiferromagnet EuMnBi$_2$,
in which fieldcontrollable Eu magnetic order significantly suppresses the
interlayer coupling between the Bi layers with Dirac fermions. In addition to
the high mobility more than 10,000 cm$^2$/Vs, Landau level splittings
presumably due to the lifting of spin and valley degeneracy are noticeable even
in a bulk magnet. These results will pave a route to the engineering of
magnetically functionalized Dirac materials.

We report on nonlinear magnetotransport in a twodimensional electron gas
hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we
observe pronounced Hall fieldinduced resistance oscillations (HIRO) which are
well known from experiments on highmobility GaAs/AlGaAs quantum wells. The
unique sensitivity of HIRO to the shortrange component of the disorder
potential allows us to unambiguously establish that the mobility of our
MgZnO/ZnO heterostructure is limited by impurities residing within or near the
2D channel. Demonstration that HIRO can be realized in a system with a much
lower mobility, much higher density, and much larger effective mass than in
previously studied systems, highlights remarkable universality of the
phenomenon and its great promise to be used in studies of a wide variety of
emerging 2D materials.

Precise estimation of spin Hall angle as well as successful maximization of
spinorbit torque (SOT) form a basis of electronic control of magnetic
properties with spintronic functionality. Until now, currentnonlinear Hall
effect, or second harmonic Hall voltage has been utilized as one of the methods
for estimating spin Hall angle, which is attributed to the magnetization
oscillation by SOT. Here, we argue the second harmonic Hall voltage in
magnetic/nonmagnetic topological insulator (TI) heterostructures,
Cr$_x$(Bi$_{1y}$Sb$_y$)$_{2x}$Te$_3$/(Bi$_{1y}$Sb$_y$)$_2$Te$_3$. From the
angular, temperature and magnetic field dependence, it is unambiguously shown
that the large second harmonic Hall voltage in TI heterostructures is governed
not by SOT but mainly by asymmetric magnon scattering mechanism without
magnetization oscillation. Thus, this method does not allow an accurate
estimation of spin Hall angle when magnons largely contribute to electron
scattering. Instead, the SOT contribution in a TI heterostructure is
exemplified by current pulse induced nonvolatile magnetization switching,
which is realized with a current density of $\sim 2.5 \times 10^{10}
\mathrm{A/m}^2$, showing its potential as spintronic materials.

We report currentdirection dependent or unidirectional magnetoresistance
(UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures,
Cr$_x$(Bi$_{1y}$Sb$_y$)$_{2x}$Te$_3$/(Bi$_{1y}$Sb$_y$)$_2$Te$_3$, that is
several orders of magnitude larger than in other reported systems. From the
magnetic field and temperature dependence, the UMR is identified to originate
from the asymmetric scattering of electrons by magnons. In particular, the
large magnitude of UMR is an outcome of spinmomentum locking and a small Fermi
wavenumber at the surface of TI. In fact, the UMR is maximized around the Dirac
point with the minimal Fermi wavenumber.

Electrodynamic responses from threedimensional (3D) topological insulators
(TIs) are characterized by the universal magnetoelectric $E\cdot B$ term
constituent of the Lagrangian formalism. The quantized magnetoelectric
coupling, which is generally referred to as topological magnetoelectric (TME)
effect, has been predicted to induce exotic phenomena including the universal
lowenergy magnetooptical effects. Here we report the experimental
demonstration of the longsought TME effect, which is exemplified by
magnetooptical Faraday and Kerr rotations in the quantum anomalous Hall (QAH)
states of magnetic TI surfaces by terahertz magnetooptics. The universal
relation composed of the observed Faraday and Kerr rotation angles but not of
any material parameters (e.g. dielectric constant and magnetic susceptibility)
well exhibits the trajectory toward the fine structure constant $\alpha$ $(=
2\pi e^2/hc \sim 1/137)$ in the quantized limit. Our result will pave a way for
versatile TME effects with emergent topological functions.

Pyrochlore oxides possessing "allinallout" spin ordering have attracted
burgeoning interest as a rich ground of emergent states. This ordering has two
distinct types of magnetic domains (allinallout or alloutallin) with
broken timereversal symmetry, and a nontrivial metallic surface state has
been theoretically demonstrated to appear at their domain wall. Here, we report
on observation of this metallic conduction at the single
allinallout/alloutallin magnetic domain wall formed at the
heterointerface of two pyrochlore iridates. By utilizing different
magnetoresponses of them with different lanthanide ions, the domain wall is
controllably inserted at the heterointerface, the surface state being detected
as anomalous conduction enhancement with a ferroic hysteresis. Our
establishment paves the way for further investigation and manipulation of this
new type of surface transport.

We achieve the enhancement of circular photogalvanic effect arising from the
photoinjection of spins in topological insulator thin films by tuning the
Fermi level ($E_{\rm F}$). A series of (Bi$_{1x}$Sb$_x$)$_2$Te$_3$ thin films
were tailored so that the Fermi energy ranges above 0.34 eV to below 0.29 eV of
the Dirac point, i.e., from the bulk conduction band bottom to the valence band
top through the bulk ingap surfaceDirac cone. The circular photogalvanic
current, indicating a flow of spinpolarized surfaceDirac electrons, shows a
pronounced peak when the $E_{\rm F}$ is set near the Dirac point and is also
correlated with the carrier mobility. Our observation reveals that there are
substantial scatterings between the surfaceDirac and bulkstate electrons in
the generation process of spinpolarized photocurrent, which can be avoided by
designing the electronic structure in topological insulators.

Pyrochlore iridates have attracted growing attention because of a theoretical
prediction of a possible topological semimetal phase originating from
allinallout spin ordering. Related to the topological band structure, recent
findings of the magnetic domain wall conduction have stimulated investigations
of magnetic domain distribution in this system. Here, we investigate the size
of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by
magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic
domains of the allinallout spin structure are known to exhibit linear MR but
with opposite signs, which enables us to estimate the ratio of the two domains
in the patterned channel. The linear MR for 80 ${\times}$ 60 ${\mu}$m$^2$
channel is nearly zero after zerofield cooling, suggesting random distribution
of domains smaller than the channel size. In contrast, the wide distribution of
the value of the linear MR is detected in 2 ${\times}$ 2 ${\mu}$m$^2$ channel,
reflecting the detectable domain size depending on each coolingcycle. Compared
to simulation results, we estimate the average size of a single allinallout
magnetic domain as 12 ${\mu}$m.

Quantum anomalous Hall effect (QAHE), which generates dissipationless edge
current without external magnetic field, is observed in magneticion doped
topological insulators (TIs), such as Cr and Vdoped (Bi,Sb)2Te3. The QAHE
emerges when the Fermi level is inside the magnetically induced gap around the
original Dirac point of the TI surface state. Although the size of gap is
reported to be about 50 meV, the observable temperature of QAHE has been
limited below 300 mK. We attempt magneticCr modulation doping into topological
insulator (Bi,Sb)2Te3 films to increase the observable temperature of QAHE. By
introducing the richCrdoped thin (1 nm) layers at the vicinity of the both
surfaces based on nonCrdoped (Bi,Sb)2Te3 films, we have succeeded in
observing the QAHE up to 2 K. The improvement in the observable temperature
achieved by this modulationdoping appears to be originating from the
suppression of the disorder in the surface state interacting with the rich
magnetic moments. Such a superlattice designing of the stabilized QAHE may pave
a way to dissipationless electronics based on the highertemperature and zero
magneticfield quantum conduction.

The spinmomentum locking at the Dirac surface state of a topological
insulator (TI) offers a distinct possibility of a highly efficient
chargetospin current (CS) conversion compared with spin Hall effects in
conventional paramagnetic metals. For the development of TIbased spin current
devices, it is essential to evaluate its conversion efficiency quantitatively
as a function of the Fermi level EF position. Here we exemplify a coefficient
of qICS to characterize the interface CS conversion effect by using spin
torque ferromagnetic resonance (STFMR) for (Bi1xSbx)2Te3 thin films whose EF
is tuned across the band gap. In bulk insulating conditions, interface CS
conversion effect via Dirac surface state is evaluated as nearly constant large
values of qICS, reflecting that the qICS is inversely proportional to the Fermi
velocity vF that is almost constant. However, when EF traverses through the
Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy
of surface spins or instability of helical spin structure. These results
demonstrate that the fine tuning of the EF in TI based heterostructures is
critical to maximizing the efficiency using the spinmomentum locking
mechanism.

Among the recently discovered ironbased superconductors, ultrathin films of
FeSe grown on SrTiO3 substrates have uniquely evolved into a high
superconductingtransitiontemperature (TC) material. The mechanisms for the
highTC superconductivity are ongoing debate mainly with the superconducting
gap characterized with insitu analysis for FeSe films grown by bottomup
molecularbeam epitaxy. Here, we demonstrate the alternative access to
investigate the highTC superconductivity in ultrathin FeSe with topdown
electrochemical etching technique in threeterminal transistor configuration.
In addition to the highTC FeSe on SrTiO3, the electrochemically etched
ultrathin FeSe transistor on MgO also exhibits superconductivity around 40 K,
implying that the application of electricfield effectively contributes to the
highTC superconductivity in ultrathin FeSe regardless of substrate material.
Moreover, the observable critical thickness for the highTC superconductivity
is expanded up to 10unitcells under applying electricfield and the
insulatorsuperconductor transition is electrostatically controlled. The
present demonstration implies that the electricfield effect on both conduction
and valence bands plays a crucial role for inducing highTC superconductivity
in FeSe.

A new class of materials termed topological insulators have been intensively
investigated due to their unique Dirac surface state carrying dissipationless
edge spin currents. Recently, it has been theoretically proposed that the three
dimensional analogue of this type of band structure, the Weyl Semimetal phase,
is materialized in pyrochlore oxides with strong spinorbit coupling,
accompanied by allinallout spin ordering. Here, we report on the fabrication
and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that
one of the two degenerate allinallout domain structures, which are connected
by timereversal operation, can be selectively formed by the polarity of the
cooling magnetic field. Once formed, the domain is robust against an oppositely
polarised magnetic field, as evidenced by an unusual odd field dependent term
in the magnetoresistance and an anomalous term in the Hall resistance. Our
findings pave the way for exploring the predicted novel quantum transport
phenomenon at the surfaces/interfaces or magnetic domain walls of pyrochlore
iridates.

By breaking the timereversalsymmetry in threedimensional topological
insulators with introduction of spontaneous magnetization or application of
magnetic field, the surface states become gapped, leading to quantum anomalous
Hall effect or quantum Hall effect, when the chemical potential locates inside
the gap. Further breaking of inversion symmetry is possible by employing
magnetic topological insulator heterostructures that host nondegenerate top and
bottom surface states. Here, we demonstrate the tailoredmaterial approach for
the realization of robust quantum Hall states in the bilayer system, in which
the cooperative or cancelling combination of the anomalous and ordinary Hall
responses from the respective magnetic and nonmagnetic layers is exemplified.
The appearance of quantum Hall states at filling factor 0 and +1 can be
understood by the relationship of energy band diagrams for the two independent
surface states. The designable heterostructures of magnetic topological
insulator may explore a new arena for intriguing topological transport and
functionality.

We have investigated magnetotransport properties in a single crystal of
pyrochoretype Nd2Ir2O7. The metallic conduction is observed on the
antiferromagnetic domain walls of the allin allout type Ir5d moment ordered
insulating bulk state, that can be finely controlled by external magnetic field
along [111]. On the other hand, an applied field along [001] induces the bulk
phase transition from insulator to semimetal as a consequence of the
fieldinduced modification of Nd4f and Ir5d moment configurations. A
theoretical calculation consistently describing the experimentally observed
features suggests a variety of exotic topological states as functions of
electron correlation and Ir5d moment orders which can be finely tuned by
choice of rareearth ion and by magnetic field, respectively.

We investigate skyrmion formation in both a single crystalline bulk and
epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent
stepwise field profile of planar Hall effect is observed in the
wellestablished skyrmion phase region in the bulk sample, which is assigned to
anisotropic magnetoresistance effect with respect to the magnetic modulation
direction. We also detect the characteristic planar Hall anomalies in the thin
films under the inplane magnetic field at low temperatures, which indicates
the formation of skyrmion strings lying in the film plane. Uniaxial magnetic
anisotropy plays an important role in stabilizing the inplane skyrmions in the
MnSi thin film.

We investigate the skyrmion formation process in nanostructured FeGe
Hallbar devices by measurements of topological Hall effect, which extracts the
winding number of a spin texture as an emergent magnetic field. Stepwise
profiles of topological Hall resistivity are observed in the course of varying
the applied magnetic field, which arise from instantaneous changes in the
magnetic nanostructure such as creation, annihilation, and jittering motion of
skyrmions. The discrete changes in topological Hall resistivity demonstrate the
quantized nature of emergent magnetic flux inherent in each skyrmion, which had
been indistinguishable in manyskyrmion systems on a macroscopic scale.

We report electrical transport measurements in a tilted magnetic field on a
highmobility twodimensional electron system confined at the MgZnO/ZnO
heterointerface. The observation of multiple crossing events of spinresolved
Landau levels (LLs) enables the mapping of the sequence of electronic states.
We further measure the renormalization of electron spin susceptibility at zero
field and the susceptibility dependence on the electron spin polarization. The
latter manifests the deviation from the Pauli spin susceptibility. As the
result, the crossing of spinresolved LLs shifts to smaller tilt angles and the
first Landau level coincidence event is absent even when the magnetic field has
only a perpendicular component to the 2DES plane.

The threedimensional (3D) topological insulator (TI) is a novel state of
matter as characterized by twodimensional (2D) metallic Dirac states on its
surface. Bibased chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their
combined/mixed compounds like Bi2Se2Te and (Bi1xSbx)2Te3 are typical members
of 3DTIs which have been intensively studied in forms of bulk single crystals
and thin films to verify the topological nature of the surface states. Here, we
report the realization of the Quantum Hall effect (QHE) on the surface Dirac
states in (Bi1xSbx)2Te3 films (x = 0.84 and 0.88). With electrostatic
gatetuning of the Fermi level in the bulk band gap under magnetic fields, the
quantum Hall states with filling factor \nu = \pm 1 are resolved with quantized
Hall resistance of Ryx = h/e2 and zero longitudinal resistance, owing to chiral
edge modes at top/bottom surface Dirac states. Furthermore, the appearance of a
\nu = 0 state (\sigma xy = 0) reflects a pseudospin Hall insulator state when
the Fermi level is tuned in between the energy levels of the nondegenerate top
and bottom surface Dirac points. The observation of the QHE in 3D TI films may
pave a way toward TIbased electronics.

Topological insulators are bulk electronic insulators which possess symmetry
protected gapless modes on their surfaces. Breaking the symmetries that
underlie the gapless nature of the surface modes is predicted to give rise to
exotic new states of matter. In particular, it has recently been predicted and
shown that breaking of time reversal symmetry in the form of ferromagnetism can
give rise to a gapped state characterized by a zero magnetic field quantized
Hall response and dissipationless longitudinal transport known as the Quantum
Anomalous Hall (QAH) state. A key question that has thus far remained
experimentally unexplored is the relationship of this new type of quantum Hall
state with the previously known orbitally driven quantum Hall states. Here, we
show experimentally that a ferromagnetic topological insulator exhibiting the
QAH state is well described by the global phase diagram of the quantum Hall
effect. By mapping the behavior of the conductivity tensor in the parameter
space of temperature, magnetic field, and chemical potential in the vicinity of
the QAH phase, we find evidence for quantum criticality and delocalization
behavior that can quantitatively be described by the renormalization group
properties of the quantum Hall ground state. This result demonstrates that the
QAH state observed in ferromagnetic topological insulators can be understood
within the context of the law of corresponding states which governs the quantum
Hall state. This suggests a roadmap for studying the QAH effect including
transitions to possible adjacent topologically nontrivial states and a
possible universality class for the QAH transition.