
A threedimensional Dirac semimetal has bulk Dirac cones in all three
momentum directions and Fermi arclike surface states, and can be converted
into a Weyl semimetal by breaking timereversal symmetry. However, the highly
conductive bulk state usually hides the electronic transport from the surface
state in Dirac semimetal. Here, we demonstrate the supercurrent carried by bulk
and surface states in NbCd3As2 nanowireNb short and long junctions,
respectively. For the 1 micrometer long junction, the FabryPerot interferences
induced oscillations of the critical supercurrent are observed, suggesting the
ballistic transport of the surface states carried supercurrent, where the bulk
states are decoherent and the topologically protected surface states still keep
coherent. Moreover, a superconducting dome is observed in the long junction,
which is attributed to the enhanced dephasing from the interaction between
surface and bulk states as tuning gate voltage to increase the carrier density.
The superconductivity of topological semimetal nanowire is promising for
braiding of Majorana fermions toward topological quantum computing.

An important challenge in the field of topological materials is to carefully
disentangle the electronic transport contribution of the topological surface
states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples,
bulk single crystals and thin films exposed to air during fabrication processes
are known to be bulk conducting, with the chemical potential in the bulk
conduction band. For Bi$_2$Te$_3$ thin films grown by molecular beam epitaxy,
we combine structural characterization (transmission electron microscopy),
chemical surface analysis as function of time (xray photoelectron
spectroscopy) and magnetotransport analysis to understand the low defect
density and record high bulk electron mobility once charge is doped into the
bulk by surface degradation. Carrier densities and electronic mobilities
extracted from the Hall effect and the quantum oscillations are consistent and
reveal a large bulk carrier mobility. Because of the cylindrical shape of the
bulk Fermi surface, the angle dependence of the bulk magnetoresistance
oscillations is twodimensional in nature.

The dynamic Mott insulatortometal transition (DMT) is key to many
intriguing phenomena in condensed matter physics yet it remains nearly
unexplored. The cleanest way to observe DMT, without the interference from
disorder and other effects inherent to electronic and atomic systems, is to
employ the vortex Mott states formed by superconducting vortices in a regular
array of pinning sites. The applied electric current delocalizes vortices and
drives the dynamic vortex Mott transition. Here we report the critical behavior
of the vortex system as it crosses the DMT line, driven by either current or
temperature. We find universal scaling with respect to both, expressed by the
same scaling function and characterized by a single critical exponent
coinciding with the exponent for the thermodynamic Mott transition. We develop
a theory for the DMT based on the parity reflectiontime reversal (PT) symmetry
breaking formalism and find that the nonequilibriuminduced Mott transition has
the same critical behavior as thermal Mott transition. Our findings demonstrate
the existence of physical systems in which the effect of nonequilibrium drive
is to generate effective temperature and hence the transition belonging in the
thermal universality class. We establish PT symmetrybreaking as a universal
mechanism for outofequilibrium phase transitions.

The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$.
By employing top and backgate electric fields at high magnetic field, the
Landau levels of the Dirac cones in the top and bottom topological surface
states can be tuned independently. When one surface is tuned to the
electrondoped side of the Dirac cone and the other surface to the holedoped
side, the quantum Hall edge channels are counterpropagating. The opposite edge
mode direction, combined with the opposite helicities of top and bottom
surfaces, allows for scattering between these counterpropagating edge modes.
The total Hall conductance is integer valued only when the scattering is
strong. For weaker interaction, a noninteger quantum Hall effect is expected
and measured.

The combination of superconductivity and the helical spinmomentum locking at
the surface state of a topological insulator (TI) has been predicted to give
rise to pwave superconductivity and Majorana bound states. The
superconductivity can be induced by the proximity effect of a an swave
superconductor (S) into the TI. To probe the superconducting correlations
inside the TI, dI/dV spectroscopy has been performed across such STI
interfaces. Both the alloyed Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and the
stoichiometric BiSbTeSe$_2$ have been used as three dimensional TI. In the case
of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$, the presence of disorder induced
electronelectron interactions can give rise to an additional zerobias
resistance peak. For the stoichiometric BiSbTeSe$_2$ with less disorder, tunnel
barriers were employed in order to enhance the signal from the interface. The
general observations in the spectra of a large variety of samples are
conductance dips at the induced gap voltage, combined with an increased subgap
conductance, consistent with pwave predictions. The induced gap voltage is
typically smaller than the gap of the Nb superconducting electrode, especially
in the presence of an intentional tunnel barrier. Additional uncovered
spectroscopic features are oscillations that are linearly spaced in energy, as
well as a possible second order parameter component.

Electrons in a Dirac semimetals possess linear dispersion in all three
spatial dimensions, and form part of a developing platform of novel quantum
materials. Bi$_{1x}$Sb$_x$ supports a threedimensional Dirac cone at the
Sbinduced band inversion point. Nanoscale phasesensitive junction technology
is used to induce superconductivity in this Dirac semimetal. Radio frequency
irradiation experiments reveal a significant contribution of 4$\pi$periodic
Andreev bound states to the supercurrent in NbBi$_{0.97}$Sb$_{0.03}$Nb
Josephson junctions. The conditions for a substantial $4\pi$ contribution to
the supercurrent are favourable because of the Dirac cone's topological
protection against backscattering, providing very broad transmission
resonances. The large gfactor of the Zeeman effect from a magnetic field
applied in the plane of the junction, allows tuning of the Josephson junctions
from 0 to $\pi$ regimes.

This study presents a review of the current state of research on teaching
quantum mechanics in secondary and lower undergraduate education. A conceptual
approach to quantum mechanics is being implemented in more and more
introductory physics courses around the world. Because of the differences
between the conceptual nature of quantum mechanics and classical physics,
research on misconceptions, testing, and teaching strategies for introductory
quantum mechanics is needed. For this review, 74 articles were selected and
analyzed for the misconceptions, research tools, teaching strategies and
multimedia applications investigated. Outcomes were categorized according to
their contribution to the various subtopics of quantum mechanics. Analysis
shows that students have difficulty relating quantum physics to physical
reality. It also shows that the teaching of complex quantum behavior, such as
time dependence, superposition and the measurement problem, has barely been
investigated for the secondary and lower undergraduate level. At the secondary
school level, this review shows a need to investigate student difficulties
concerning wave functions and potential wells. Investigation of research tools
shows the necessity for the development of assessment tools for secondary and
lower undergraduate education, which cover all major topics and are suitable
for statistical analysis. Furthermore, this review shows the existence of very
diverse ideas concerning teaching strategies for quantum mechanics and a lack
of research into which strategies promote understanding. This review underlines
the need for more empirical research into student difficulties, teaching
strategies, activities and research tools intended for a conceptual approach
for quantum mechanics.

Combining the ability to prepare highquality, intrinsic Bi$_2$Te$_3$
topological insulator thin films of low carrier density with insitu protective
capping, we demonstrate a pronounced, gatetunable change in transport
properties of Bi$_2$Te$_3$ thin films. Using a backgate, the carrier density
is tuned by a factor of $\sim 7$ in Al$_2$O$_3$ capped Bi$_2$Te$_3$ sample and
by a factor of $\sim 2$ in Te capped Bi$_2$Te$_3$ films. We achieve full
depletion of bulk carriers, which allows us to access the topological transport
regime dominated by surface state conduction. When the Fermi level is placed in
the bulk band gap, we observe the presence of two coherent conduction channels
associated with the two decoupled surfaces. Our magnetotransport results show
that the combination of capping layers and electrostatic tuning of the Fermi
level provide a technological platform to investigate the topological
properties of surface states in transport experiments and pave the way towards
the implementation of a variety of topological quantum devices.

We investigate magnetoresistance of a square array of superconducting islands
placed on a normal metal, which offers a unique tunable laboratory for
realizing and exploring quantum manybody systems and their dynamics. A vortex
Mott insulator where magnetic fieldinduced vortices are frozen in the dimples
of the egg crate potential by their strong repulsion interaction is discovered.
We find an insulatortometal transition driven by the applied electric current
and determine critical exponents that exhibit striking similarity with the
common thermodynamic liquidgas transition. A simple and straightforward
quantum mechanical picture is proposed that describes both tunneling dynamics
in the deep insulating state and the observed scaling behavior in the vicinity
of the critical point. Our findings offer a comprehensive description of
dynamic Mott critical behavior and establish a deep connection between
equilibrium and nonequilibrium phase transitions.