• The novel ferroelectric-like structural transition observed in metallic LiOsO$_3$ [Y. Shi et al., Nat. Mater. 12, 1024 (2013)], has invoked many theoretical and experimental interests. In this work, we have performed polarized and temperature-dependent Raman scattering measurements on high-quality single crystal LiOsO$_3$ and identified Raman-active modes in both centrosymmetric phase (300 K, R$\bar{3}$c) and non-centrosymmetric phase (10 K, R3c). Only four phonon peaks are observed in the former phase, while there are twelve peaks in the latter phase because of the reduction of crystal symmetry. With the help of careful symmetry analysis and first-principles calculations, we can make a systematic assignment for the observed Raman modes in both phases. The significant changes in line-width and the continuous evolution of Raman frequencies with temperatures were observed for the E$_g$ modes around the transition temperature, which suggests that the ferroelectric-like structural transition is a continuous order-disorder transition. The result sheds light on the coexistence of ferroelectricity and metallicity in the compound.
  • We have performed polarized and temperature-dependent Raman scattering measurements on extremely large magnetoresitance compounds TaAs$_2$ and NbAs$_2$. In both crystals, all the Raman active modes, including six A$_g$ modes and three B$_g$ modes, are clearly observed and well assigned with the combination of symmetry analysis and first-principles calculations. The well-resolved periodic intensity modulations of the observed modes with rotating crystal orientations, verify the symmetry of each assigned mode and are fitted to experimentally determine the elements of Raman tensor matrixes. The broadening of two A$_g$ modes seen in both compounds allows us to estimate electron-phonon coupling constant, which suggests a relatively small electron-phonon coupling in the semimetals TaAs$_2$ and NbAs$_2$. The present study provides the fundamental lattice dynamics information on TaAs$_2$ and NbAs$_2$ and may shed light on the understanding of their extraordinary large magnetoresistance.
  • Dirac materials exhibit intriguing low-energy carrier dynamics that offer a fertile ground for novel physics discovery. Of particular interest is the interplay of Dirac carriers with other quantum phenomena, such as magnetism. Here we report on a two-magnon Raman scattering study of AMnBi2 (A=Ca, Sr), a prototypical magnetic Dirac system comprising alternating Dirac-carrier and magnetic layers. We present the first accurate determination of the exchange energies in these compounds and, by comparison to the reference compound BaMn2Bi2, we show that the Dirac-carrier layers in AMnBi2 significantly enhance the exchange coupling between the magnetic layers, which in turn drives a charge-gap opening along the Dirac locus. Our findings break new grounds in unveiling the fundamental physics of magnetic Dirac materials, which offer a novel platform for probing a distinct type of spin-Fermion interaction. The outstanding properties of these materials allow a delicate manipulation of the interaction between the Dirac carriers and magnetic moments, thus holding great promise for applications in magnetic Dirac devices.
  • ThCr2Si2-type phosphide ACo2P2 (A=Rare earth elements) has the same structure as iron arsenides, but their magnetic behaviors are quite distinct. In this paper, we for the first time grew a series of La1-xCexCo2P2 single crystals (x=0.0 to1.0), and made structural and magnetic characterizations. This allows us to carry out a careful investigation on the evolution of magnetism with cerium content and build a magnetic phase diagram. We found that the introduction of cerium induces a rapid decrease of c-axis and a change from ferromagnetic (FM) to antiferromagnetic (AFM) states. By employing first-principles band-structure calculations, we identify the formation of P-P bonding with the shortening of c-axis, which effectively drives an increase of AFM interaction and eventually leads to AFM ordering in the high doping region. The present study may shed light on the interplay between the structural collapsing and electronic/magnetic properties in 122 iron pnictides.
  • We performed comparable polarized Raman scattering studies of MoTe2 and WTe2. By rotating crystals to tune the angle between the principal axis of the crystals and the polarization of the incident/scattered light, we obtained the angle dependence of the intensities for all the observed modes, which is perfectly consistent with careful symmetry analysis. Combining these results with first-principles calculations, we clearly identified the observed phonon modes in the different phases of both crystals. Fifteen Raman-active phonon modes (10Ag+5Bg) in the high-symmetry phase 1T'-MoTe2 (300 K) were well assigned, and all the symmetry-allowed Raman modes (11A1+6A2) in the low-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A1+4A2) in Td-WTe2 were observed and identified. The present work provides basic information about the lattice dynamics in transition-metal dichalcogenides and may shed some light on the understanding of the extremely large magnetoresistance (MR) in this class of materials.
  • The recent renaissance of black phosphorus (BP) as a two-dimensional 2D layered material has generated tremendous interest in its tunable electronic band gap and highly anisotropic transport properties that offer new opportunities for device applications. Many of these outstanding properties are attributed to its unique structural characters that still need elucidation. Here we show Raman measurements that reveal an ultralow-frequency collective compression mode (CCM), which is unprecedented among similar 2D layered materials. This novel CCM indicates an unusually strong interlayer coupling in BP, which is quantitatively supported by a phonon frequency analysis and first-principles calculations. Moreover, the CCM and another branch of low-frequency Raman modes shift sensitively with changing number of layers, allowing an accurate determination of the thickness up to tens of atomic layers, which is considerably higher than those previously achieved by using high-frequency Raman modes. These results offer fundamental insights and practical tools for exploring multilayer BP in new device applications.
  • Modern electronic devices heavily rely on the accurate control of charge and spin of electrons. The emergence of controllable valley degree of freedom brings new possibilities and presents a promising prospect towards valleytronics. Recently, valley excitation selected by chiral optical pumping has been observed in monolayer MoS2. In this work, we report polarized photoluminescence (PL) measurements for monolayer MoSe2, another member of the family of transition-metal-dichalcogenides (MX2), and observe drastic difference from the outcomes of MoS2. In particular, we identify a valley polarization (VP) up to 70% for B exciton, while that for A exciton is less than 3%. Besides, we also find a small but finite negative VP for A- trion. These results reveal several new intra- and inter-valley scattering processes which significantly affect valley polarization, hence provide new insights into exciton physics in monolayer MX2 and possible valleytronic applications.
  • The recently discovered layered BiS2-based superconductors have attracted a great deal of interest due to their structural similarity to cuprate and iron-pnictide superconductors. We have performed Raman scattering measurements on two superconducting crystals NdO0.5F0.5BiS2 (Tc = 4.5 K) and NdO0.7F0.3BiS2 (Tc = 4.8 K). The observed Raman phonon modes are assigned with the aid of first-principles calculations. The asymmetrical phonon mode around 118 cm-1 reveals a small electron-phonon (e-ph) coupling constant 0.16, which is insufficient to generate superconductivity at ~ 4.5 K. In the Raman spectra there exists a clear temperature-dependent hump around 100 cm-1, which can be well understood in term of inter-band vertical transitions around Fermi surface. The transitions get boosted when the particular rectangular-like Fermi surface meets band splitting caused by spin-orbit coupling. It enables a unique and quantitative insight into the band splitting.
  • We report experimental measurements of electronic Raman scattering under resonant conditions by electrons in individual single-walled carbon nanotubes (SWNTs). The inelastic Raman scattering at low frequency range reveals a single particle excitation feature and the dispersion of electronic structure around the center of Brillouin zone of a semiconducting SWNT (14, 13) is extracted.