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CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging
technology in the field of charged particle tracking. They will be used in the
vertex detectors of experiments like STAR, CBM and ALICE and are considered for
the ILC and the tracker of ATLAS. In those applications, the sensors are
exposed to sizeable radiation doses.
While the tolerance of MAPS to ionizing radiation and fast hadrons is well
known, the damage caused by low energy neutrons was not studied so far. Those
slow neutrons may initiate nuclear fission of $^{10}$B dopants found in the
B-doped silicon active medium of MAPS. This effect was expected to create an
unknown amount of radiation damage beyond the predictions of the NIEL (Non
Ionizing Energy Loss) model for pure silicon.
We estimate the impact of this effect by calculating the additional NIEL
created by this fission. Moreover, we show first measured data for CMOS sensors
which were irradiated with cold neutrons. The empirical results contradict the
prediction of the updated NIEL model both, qualitatively and quantitatively:
The sensors irradiated with slow neutrons show an unexpected and strong
acceptor removal, which is not observed in sensors irradiated with MeV
neutrons.
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Substantial experimental and theoretical efforts worldwide are devoted to
explore the phase diagram of strongly interacting matter. At LHC and top RHIC
energies, QCD matter is studied at very high temperatures and nearly vanishing
net-baryon densities. There is evidence that a Quark-Gluon-Plasma (QGP) was
created at experiments at RHIC and LHC. The transition from the QGP back to the
hadron gas is found to be a smooth cross over. For larger net-baryon densities
and lower temperatures, it is expected that the QCD phase diagram exhibits a
rich structure, such as a first-order phase transition between hadronic and
partonic matter which terminates in a critical point, or exotic phases like
quarkyonic matter. The discovery of these landmarks would be a breakthrough in
our understanding of the strong interaction and is therefore in the focus of
various high-energy heavy-ion research programs. The Compressed Baryonic Matter
(CBM) experiment at FAIR will play a unique role in the exploration of the QCD
phase diagram in the region of high net-baryon densities, because it is
designed to run at unprecedented interaction rates. High-rate operation is the
key prerequisite for high-precision measurements of multi-differential
observables and of rare diagnostic probes which are sensitive to the dense
phase of the nuclear fireball. The goal of the CBM experiment at SIS100
(sqrt(s_NN) = 2.7 - 4.9 GeV) is to discover fundamental properties of QCD
matter: the phase structure at large baryon-chemical potentials (mu_B > 500
MeV), effects of chiral symmetry, and the equation-of-state at high density as
it is expected to occur in the core of neutron stars. In this article, we
review the motivation for and the physics programme of CBM, including
activities before the start of data taking in 2022, in the context of the
worldwide efforts to explore high-density QCD matter.
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- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for
charged particle tracking are considered as technology for numerous experiments
in heavy ion and particle physics. To match the requirements for those
applications in terms of tolerance to non-ionizing radiation, it is being tried
to deplete the sensitive volume of the, traditionally non-depleted, silicon
sensors.
We study the feasibility of this approach for the common case that the
collection diodes of the pixel are small as compared to the pixel pitch. An
analytic equation predicting the thickness of the depletion depth and the
capacity of this point-like junction is introduced. We find that the
predictions of this equations differs qualitatively from the usual results for
flat PN junctions and that $dC/dU$-measurements are not suited to measure the
depletion depth of diodes with point-like geometry. The predictions of the
equation is compared with measurements on the depletion depth of CMOS sensors,
which were carried out with a novel measurement protocol. It is found that the
equation and the measurement results match with each other. By comparing our
findings with TCAD simulations, we find that precise simulation models matches
the empirical findings while simplified models overestimate the depletion depth
dramatically. A potential explanation for this finding is introduced and the
consequences for the design of CMOS sensors are discussed.