• The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we systematically investigated the anisotropic magnetoresistance in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, the three-dimensional (3D) magnetoresistance (MR) shows strong anisotropy. The MR ratio of maximum and minimum directions can reach 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, which indicates the quasi-2D electronic structures. This is further confirmed by the angular-dependent Shubnikov-de Haas (SdH) oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our findings shed light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe Dirac materials.
  • We report comprehensive studies of the single crystal growth and electrical transport properties for various samples of TaAs, the first experimentally confirmed inversion symmetry-breaking Weyl semimetal. The transport parameters for different samples are obtained through the fitting of the two band model and the analysis of Shubnikov de Haas oscillations. We find that the ratio factor of transport lifetime to quantum lifetime is intensively enhanced when the Fermi level approaches the Weyl node. This result is consistent with the side-jump interpretation derived from a chirality-protected shift in the scattering process for a Weyl semimetal.
  • We report the electrical transport properties for Weyl semimetal TaAs in an intense magnetic field. Series of anomalies occur in the longitudinal magnetoresistance and Hall signals at ultra-low temperatures when the Weyl electrons are confined into the lowest Landau level. These strongly temperature-dependent anomalies are ascribed to the electron-hole pairing instability. Our measurements show that the Weyl semimetal TaAs in the ultraquantum regime provides a good platform for studying electron-electron interaction in topological nontrivial semimetals.
  • Weyl semimetals provide the realization of Weyl fermions in solid-state physics. Among all the physical phenomena that are enabled by Weyl semimetals, the chiral anomaly is the most unusual one. Here, we report signatures of the chiral anomaly in the magneto-transport measurements on the first Weyl semimetal TaAs. We show negative magnetoresistance under parallel electric and magnetic fields, that is, unlike most metals whose resistivity increases under an external magnetic field, we observe that our high mobility TaAs samples become more conductive as a magnetic field is applied along the direction of the current for certain ranges of the field strength. We present systematically detailed data and careful analyses, which allow us to exclude other possible origins of the observed negative magnetoresistance. Our transport data, corroborated by photoemission measurements, first-principles calculations and theoretical analyses, collectively demonstrate signatures of the Weyl fermion chiral anomaly in the magneto-transport of TaAs.
  • We report the experimental discovery of Adler-Bell-Jackiw chiral anomaly in a Weyl semimetal crystal.
  • Compared with the semiconductors such as silicon and gallium arsenide which have been used widely for decades, semimetals have not received much attention in the field of condensed matter physics until very recently. The realization of electronic topological properties has motivated interest of investigations on Dirac semimetals and Weyl semimetals, which are predicted to show unprecedented features beyond the classical electronic theories of metals. In this letter for the first time we report the electric transport properties of a robust Weyl semimetal candidate proposed by recent theoretical calculations, TaAs. Our study shows that this bulk material manifests ultrahigh carrier mobility ($\mathrm{5\times10^5 cm^2/V\cdot{s}}$) accompanied by an extremely large, unsaturated linear magnetoresistance ($\mathrm{MR}$), which reaches 5400 at 10 Kelvins in a magnetic field of 9 Teslas and 2.47$\times$10$^4$ at 1.5 Kelvins in a magnetic field of 56 Teslas. We also observed strong Shubnikov-de Haas (SdH) oscillations associated with an extremely low quantum limit ($\sim$8 Teslas). Further studies on TaAs, especially in the ultraquantum limit regime, will help to extend the realization of the topological properties of these exotic electrons.