• ### Mirror Protected Multiple Nodal Line Semimetals and Material Realization(1804.06960)

April 19, 2018 cond-mat.mtrl-sci
The conventional k.p method fails to capture the full and essential physics of many symmetry enriched multiple nodal line structures in the three dimensional Brillouin zone. Here we present a new and systematical method to construct the effective lattice model of mirror symmetry protected three-dimensional multiple nodal line semimetals, when the spin-orbit interaction is ignored. For systems with a given pair of perpendicular nodal rings, we obtain all the effective lattice models and eleven inequivalent nodal line Fermi surfaces together with their related constraints. By means of first-principles calculations, we first propose a family of real materials, beta phase of ternary nitrides X2GeN2 (X = Ca; Sr; Ba), that support one kind of these novel Fermi surfaces. Therefore, our work deepens the understanding of the nodal line structures and promotes the experimental progress of topological nodal line semimetals.
• ### Almost ideal nodal-loop semimetal in monoclinic CuTeO$_3$ material(1803.04458)

March 12, 2018 cond-mat.mtrl-sci
Nodal-loop semimetals are materials in which the conduction and valence bands cross on a one-dimensional loop in the reciprocal space. For the nodal-loop character to manifest in physical properties, it is desired that the loop is close to the Fermi level, relatively flat in energy, simple in its shape, and not coexisting with other extraneous bands. Here, based on the first-principles calculations, we show that the monoclinic CuTeO$_3$ is a realistic nodal-loop semimetal that satisfies all these requirements. The material features only a single nodal loop around the Fermi level, protected by either of the two independent symmetries: the $\mathcal{PT}$ symmetry and the glide mirror symmetry. The size of the loop can be effectively tuned by strain, and the loop can even be annihilated under stain, making a topological phase transition to a trivial insulator phase. Including the spin-orbit coupling opens a tiny gap at the loop, and the system becomes a $\mathbb{Z}_2$ topological semimetal with a nontrivial bulk $\mathbb{Z}_2$ invariant but no global bandgap. The corresponding topological surface states have been identified. We also construct a low-energy effective model to describe the nodal loop and the effect of spin-orbit coupling.
• ### Experimental observation of node-line-like surface states in LaBi(1711.11174)

In a Dirac nodal line semimetal, the bulk conduction and valence bands touch at extended lines in the Brillouin zone. To date, most of the theoretically predicted and experimentally discovered nodal lines derive from the bulk bands of two- and three-dimensional materials. Here, based on combined angle-resolved photoemission spectroscopy measurements and first-principles calculations, we report the discovery of node-line-like surface states on the (001) surface of LaBi. These bands derive from the topological surface states of LaBi and bridge the band gap opened by spin-orbit coupling and band inversion. Our first-principles calculations reveal that these "nodal lines" have a tiny gap, which is beyond typical experimental resolution. These results may provide important information to understand the extraordinary physical properties of LaBi, such as the extremely large magnetoresistance and resistivity plateau.
• ### Tunable Half-metallic Magnetism in Atom-thin Holey Two-dimensional C$_2$N Monolayer(1702.03022)

Aug. 28, 2017 cond-mat.mtrl-sci
Exploring two-dimensional (2D) materials with magnetic ordering is a focus of current research. It remains a challenge to achieve tunable magnetism in a material of one-atom-thickness without introducing extrinsic magnetic atoms or defects. Here, based on first-principles calculations, we propose that tunable ferromagnetism can be realized in the recently synthesized holey 2D C$_2$N ($h$2D-C$_2$N) monolayer via purely electron doping that can be readily achieved by gating. We show that owing to the prominent van Hove singularity in the band structure, the material exhibits ferromagnetism even at a small doping level. Remarkably, over a wide doping range of 4$\times$10$^{13}$/cm$^2$ to 8$\times$10$^{13}$/cm$^2$, the system becomes half-metallic, with carriers fully spin-polarized. The estimated Curie temperature can be up to 320 K. Besides gating, we find that the magnetism can also be effectively tuned by lattice strain. Our result identifies $h$2D-C$_2$N as the first material with single-atom-thickness that can host gate-tunable room-temperature half-metallic magnetism, suggesting it as a promising platform to explore nanoscale magnetism and flexible spintronic devices.
• ### Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si(1611.09578)

Aug. 18, 2017 cond-mat.mtrl-sci
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the {\Gamma} point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.
• ### A new kind of 2D topological insulators BiCN with a giant gap and its substrate effects(1607.07541)

July 26, 2016 cond-mat.mes-hall
Based on DFT calculation, we predict that BiCN, i.e., bilayer Bi films passivated with -CN group, is a novel 2D Bi-based material with highly thermodynamic stability, and demonstrate that it is also a new kind of 2D TI with a giant SOC gap (? 1 eV) by direct calculation of the topological invariant Z2 and obvious exhibition of the helical edge states. Monolayer h-BN and MoS2 are identified as good candidate substrates for supporting the nontrivial topological insulating phase of the 2D TI films, since the two substrates can stabilize and weakly interact with BiCN via van derWaals interaction and thus hardly affect the electronic properties, especially the band topology. The topological properties are robust against the strain and electric field. This may provide a promising platform for realization of novel topological phases.
• ### Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap(1402.2399)

Nov. 25, 2014 cond-mat.mtrl-sci
Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room temperature (RT). Based on the first-principles calculations, here we predict a group of 2D topological insulators BiX/SbX (X = H, F, Cl, and Br) monolayers with extraordinarily large bulk gaps from 0.32 to a record value of 1.08 eV. These giant-gaps are entirely due to the result of strong spin-orbit interaction related to px and py orbitals of Bi/Sb atoms around the two valley K and K' of honeycomb lattice, which is different significantly from the one consisted of pz orbital just like in graphene/silicene. The topological characteristic of BiX/SbX monolayers is confirmed by the calculated nontrivial Z2 index and an explicit construction of the low energy effective Hamiltonian in these systems. We show that the honeycomb structures of BiX monolayers remain stable even at a temperature of 600 K. These features make the giant-gap TIs BiX/SbX monolayers an ideal platform to realize many exotic phenomena and fabricate new quantum devices operating at RT. Furthermore, biased BiX/SbX monolayers become a quantum valley Hall insulator, showing valley-selective circular dichroism.