
We introduce a new resistance measurement method that is useful in
characterizing materials with both surface and bulk conduction, such as
threedimensional topological insulators. The transport geometry for this new
resistance measurement configuration consists of one current lead as a closed
loop that fully encloses the other current lead on the surface, and two voltage
leads that are both placed outside the loop. We show that in the limit where
the transport is dominated by the surface conductivity of the material, the
fourterminal resistance measured from such a transport geometry is
proportional to $\sigma_b/\sigma_s^2$, where $\sigma_b$ and $\sigma_s$ are the
bulk and surface conductivities of the material, respectively. We call this new
type of measurement \textit{inverted resistance measurement}, as the resistance
scales inversely with the bulk resistivity. We discuss possible implementations
of this new method by performing numerical calculations on different geometries
and introduce strategies to extract the bulk and surface conductivities. We
also demonstrate inverted resistance measurements on SmB$_6$, a topological
Kondo insulator, using both singlesided and coaxiallyaligned doublesided
Corbino disk transport geometries. Using this new method, we are able to
measure the bulk conductivity, even at low temperatures, where the bulk
conduction is much smaller than the surface conduction in this material.

SmB$_6$ exhibits a small (1520 meV) bandgap at low temperatures due to
hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy
$(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We
study its magnetoresistance in 60T pulsed fields between 1.5 K and 4 K. The
response of the nearly $T$independent surface states (which show no
Shubnikovde Haas oscillations) is distinct from that of the activated bulk.
$E_{A}$ shrinks by 50% under fields up to 60 T. Data up to 93 T suggest that
this trend continues beyond 100 T, in contrast with previous explanations. It
rules out emerging theories to explain observed exotic magnetic quantum
oscillations.

The mixed valent compound SmB6 is of high current interest as the first
candidate example of topologically protected surface states in a strongly
correlated insulator and also as a possible host for an exotic bulk manybody
state that would manifest properties of both an insulator and a metal. Two
different de Haas van Alphen (dHvA) experiments have each supported one of
these possibilities, while angle resolved photoemission spectroscopy (ARPES)
for the (001) surface has supported the first, but without quantitative
agreement to the dHvA results. We present new ARPES data for the (110) surface
and a new analysis of all published dHvA data and thereby bring ARPES and dHvA
into substantial consistency around the basic narrative of two dimensional
surface states.

Topological insulators (TIs) have the singular distinction of being
electronic insulators while harboring metallic, conductive surfaces. In
ordinary materials, defects such as cracks and deformations are barriers to
electrical conduction, intuitively making the material more electrically
resistive. Peculiarly, 3D TIs should become better conductors when they are
cracked because the cracks themselves, which act as conductive topological
surfaces, provide additional paths for the electrical current. Significantly,
for a TI material, any surface or extended defect harbors such conduction. In
this letter, we demonstrate that small subsurface cracks formed within the
predicted 3D TI samarium hexaboride (SmB$_{6}$) via systematic scratching or
sanding results in such an increase in the electrical conduction. SmB$_{6}$ is
in a unique position among TIs to exhibit this effect because its
singlecrystals are thick enough to harbor cracks, and because it remarkably
does not appear to suffer from conduction through bulk impurities. Our results
not only strengthen the building case for SmB$_{6}$'s topological nature, but
are relevant to all TIs with cracks, including TI films with grain boundaries.

In Kondo insulator samarium hexaboride SmB$_6$, strong correlation and band
hybridization lead to an insulating gap and a diverging resistance at low
temperature. The resistance divergence ends at about 5 Kelvin, a behavior
recently demonstrated to arise from the surface conductance. However, questions
remain whether and where a topological surface state exists. Quantum
oscillations have not been observed to map the Fermi surface. We solve the
problem by resolving the Landau Level quantization and Fermi surface topology
using torque magnetometry. The observed Fermi surface suggests a two
dimensional surface state on the (101) plane. Furthermore, the tracking of the
Landau Levels in the infinite magnetic field limit points to 1/2, which
indicates a 2D Dirac electronic state.

We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN
heterostructures with two different Alcompositions (x=0.15 and x=0.25). The
twodimensional electron gas formed at the AlN/GaN heterointerface was
characterized by Shubnikovde Haas and Hall measurements. Using optical
illumination, we were able to increase the carrier density of the
Al0.15Ga0.85N/AlN/GaN sample from 1.6x10^{12} cm^{2} to 5.9x1012 cm^{2},
while the electron mobility was enhanced from 9540 cm2/Vs to 21400 cm2/Vs at T
= 1.6 K. The persistent photocurrent in both samples exhibited a strong
dependence on illumination wavelength, being highest close to the bandgap and
decreasing at longer wavelengths. The PPC effect became fairly weak for
illumination wavelengths longer than 530 nm and showed a more complex response
with an initial negative photoconductivity in the infrared region of the
spectrum (>700 nm). The maximum PPCefficiency for 390 nm illumination was
0.011% and 0.005% for Al0.25Ga0.75N/AlN/GaN and Al0.15Ga0.85N/AlN/GaN samples,
respectively. After illumination, the carrier density could be reduced by
annealing the sample. Annealing characteristics of the PPC effect were studied
in the 20280 K temperature range. We found that annealing at 280 K was not
sufficient for full recovery of the carrier density. In fact, the PPC effect
occurs in these samples even at room temperature. Comparing the measurement
results of two samples, the Al0.25Ga0.75N/AlN/GaN sample had a larger response
to illumination and displayed a smaller recovery with thermal annealing. This
result suggests that the energy scales of the defect configurationcoordinate
diagrams for these samples are different, depending on their Alcomposition.

Spinorbit coupling is studied using the quantum interference corrections to
conductance in AlGaN/AlN/GaN twodimensional electron systems where the carrier
density is controlled by the persistent photoconductivity effect. All the
samples studied exhibit a weak antilocalization feature with a spinorbit field
of around 1.8 mT. The zerofield electron spin splitting energies extracted
from the weak antilocalization measurements are found to scale linearly with
the Fermi wavevector with an effective linear spinorbit coupling parameter
5.5x10^{13} eV m. The spinorbit times extracted from our measurements varied
from 0.74 to 8.24 ps within the carrier density range of this experiment.