• ### Control of surface potential at polar domain walls in a nonpolar oxide(1802.02510)

Feb. 7, 2018 cond-mat.mtrl-sci
Ferroic domain walls could play an important role in microelectronics, given their nanometric size and often distinct functional properties. Until now, devices and device concepts were mostly based on mobile domain walls in ferromagnetic and ferroelectric materials. A less explored path is to make use of polar domain walls in nonpolar ferroelastic materials. Indeed, while the polar character of ferroelastic domain walls has been demonstrated, polarization control has been elusive. Here, we report evidence for the electrostatic signature of the domain-wall polarization in nonpolar calcium titanate (CaTiO3). Macroscopic mechanical resonances excited by an ac electric field are observed as a signature of a piezoelectric response caused by polar walls. On the microscopic scale, the polarization in domain walls modifies the local surface potential of the sample. Through imaging of surface potential variations, we show that the potential at the domain wall can be controlled by electron injection. This could enable devices based on nondestructive information readout of surface potential.
• ### Characterization of PARIS LaBr$_3$(Ce)-NaI(Tl) phoswich detectors upto $E_\gamma$ $\sim$ 22 MeV(1605.00811)

May 20, 2016 nucl-ex, physics.ins-det
In order to understand the performance of the PARIS (Photon Array for the studies with Radioactive Ion and Stable beams) detector, detailed characterization of two individual phoswich (LaBr$_3$(Ce)-NaI(Tl)) elements has been carried out. The detector response is investigated over a wide range of $E_{\gamma}$ = 0.6 to 22.6 MeV using radioactive sources and employing $^{11}B(p,\gamma)$ reaction at $E_p$ = 163 keV and $E_p$ = 7.2 MeV. The linearity of energy response of the LaBr$_3$(Ce) detector is tested upto 22.6 MeV using three different voltage dividers. The data acquisition system using CAEN digitizers is set up and optimized to get the best energy and time resolution. The energy resolution of $\sim$ 2.1% at $E_\gamma$ = 22.6~MeV is measured for the configuration giving best linearity upto high energy. Time resolution of the phoswich detector is measured with a $^{60}$Co source after implementing CFD algorithm for the digitized pulses and is found to be excellent (FWHM $\sim$ 315~ps). In order to study the effect of count rate on detectors, the centroid position and width of the $E_{\gamma}$ = 835~keV peak were measured upto 220 kHz count rate. The measured efficiency data with radioactive sources are in good agreement with GEANT4 based simulations. The total energy spectrum after the add-back of energy signals in phoswich components is also presented.
• The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
• ### Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption(1203.3299)

July 12, 2012 cond-mat.mes-hall
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $\nu = 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a doping of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.
• ### Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)(1206.2474)

The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidation. The monitoring of the oxidation process demonstrates that the oxygen saturates the Si dangling bonds, breaks some Si-C bonds at the interface and intercalates the graphene layer. Accurate control over the oxidation parameters enables us to tune the charge density modulation in the layer.
• ### Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)(1104.1359)

April 7, 2011 cond-mat.mtrl-sci