• Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell.
  • The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or outwards ferroelectric polarizations display opposite sense of circulation of spin in bulk Rashba bands, as seen by spin and angular resolved photoemission experiments. Our results represent the first experimental demonstration of ferroelectric control of the spin texture in a semiconductor, a fundamental milestone towards the exploitation of the non-volatile electrically switchable spin texture of GeTe in spintronic devices.
  • GeTe has been proposed as the father compound of a new class of functional materials displaying bulk Rashba effects coupled to ferroelectricity: ferroelectric Rashba semiconductors. In nice agreement with first principle calculations, we show by angular resolved photoemission and piezo-force microscopy that GeTe displays surface and bulk Rashba bands arising from the intrinsic inversion symmetry breaking provided by the remanent ferroelectric polarization. This work points to the possibility to control the spin chirality of bands in GeTe by acting on its ferroelectric polarization.
  • Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Ne\'el temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.
  • Optical spin orientation and depolarization phenomena in semiconductors are of overwhelming importance for the development of spin-optoelectronics. In this paper we employ Ge-based spin-photodiodes to investigate the room temperature spectral dependence of optical spin orientation in Germanium, in the range 400-1550 nm, and the photo-carrier spin relaxation phenomena. Apart from the maximum in the spin polarization of photo-carriers for photon energy resonant with the direct gap (1550 nm), we experimentally demonstrate the presence of a second sizable peak at 530 nm due to photo-generation far away from the center of the Brillouin zone, within the L valleys. Furthermore, our data indicate that the equivalent the spin lifetime of holes in Ge is in the order of 5-10 ps, meaning that the spin diffusion length for holes at room temperature is larger than expected, in the order of 150-220 nm.
  • We present a combined experimental and computational method which enables the precise determination of the atomic positions in a thin film using CuK{\alpha} radiation, only. The capabilities of this technique surpass simple structure refinement and allow solving unknown phases stabilized by substrate-induced stress. We derive the appropriate corrections to transform the measured integrated intensities into structure factors. Data collection was performed entirely on routinely available laboratory diffractometers (CuK{\alpha} radiation); the subsequent analysis was carried out by single-crystal direct methods ({\delta} recycling procedure) followed by the least-squares refinement of the structural parameters of the unit cell content. We selected an epitaxial thin film of CuMnAs grown on top of a GaAs substrate, which formed a crystal structure with tetragonal symmetry, differing from the bulk material which is orthorhombic. Here we demonstrate the new tetragonal form of epitaxial CuMnAs grown on GaAs substrate and present consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses.
  • The design of large-scale electronic circuits that are entirely spintronics-driven requires a current source that is highly spin-polarised at and beyond room temperature, cheap to build, efficient at the nanoscale and straightforward to integrate with semiconductors. Yet despite research within several subfields spanning nearly two decades, this key building block is still lacking. We experimentally and theoretically show how the interface between Co and phthalocyanine molecules constitutes a promising candidate. Spin-polarised direct and inverse photoemission experiments reveal a high degree of spin polarisation at room temperature at this interface. We measured a magnetic moment on the molecules's nitrogen pi orbitals, which substantiates an ab-initio theoretical description of highly spin-polarised charge conduction across the interface due to differing spinterface formation mechanims in each spin channel. We propose, through this example, a recipe to engineer simple organic-inorganic interfaces with remarkable spintronic properties that can endure well above room temperature.
  • Here we show the room temperature integrated detection of the helicity of photons with 1300 nm wavelength, via spin- photodiodes based on fully epitaxial Fe/MgO/Ge(001) heterostructures. These devices convert the photon helicity in a variation of the photocurrent ({\Delta}I) for opposite orientations of the Fe magnetization. We found {\Delta}I on the order of 5.9% for 100% circularly polarized light, both in the forward and the reverse bias, with a contribution of 0.8% from the Fe dichroic light absorption and of 5.1% from the spin filtering of photo-generated carriers crossing the Fe/MgO/Ge tunneling barrier.