• ### Nano-machining, surface analysis and emittance measurements of a copper photocathode at SPARC_LAB(1801.03823)

Jan. 11, 2018 physics.acc-ph
R\&D activity on Cu photocathodes is under development at the SPARC\_LAB test facility to fully characterize each stage of the photocathode "life" and to have a complete overview of the photoemission properties in high brightness photo-injectors. The nano(n)-machining process presented here consists in diamond milling, and blowing with dry nitrogen. This procedure reduces the roughness of the cathode surface and prevents surface contamination introduced by other techniques, such as polishing with diamond paste or the machining with oil. Both high roughness and surface contamination cause an increase of intrinsic emittance and consequently a reduction of the overall electron beam brightness. To quantify these effects, we have characterized the photocathode surface in terms of roughness measurement, and morphology and chemical composition analysis by means of Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), and Atomic Force Microscopy (AFM) techniques. The effects of n-machining on the electron beam quality have been also investigated through emittance measurements before and after the surface processing technique. Finally, we present preliminary emittance studies of yttrium thin film on Cu photocathodes.
• A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,\mu \mathrm{m}$ and $7.99\pm0.21\,\mu \mathrm{m}$ along the $100\,\mu \mathrm{m}$ and $150\,\mu \mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
• ### Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors(1611.10132)

Nov. 30, 2016 hep-ex, physics.ins-det
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
• ### Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations(1611.10138)

Nov. 30, 2016 hep-ex, physics.ins-det
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2 10^16 1 MeV equivalent n/cm^2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.
• The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.