
The number of electrons on isolated small metallic islands and semiconductor
quantum dots is quantized. When tunnelling is enabled via opaque barriers this
number can change by an integer.Every extra electron adds an elementary charge,
e, at an energy cost, a charging energy, which at low temperatures regulates
the electron flow as onebyone, single electron tunnelling.In superconductors
the addition is in units of 2e charges, reflecting that the Cooper pair
condensate must have an even parity [3]. This evenparity ground state is
foundational for all superconducting qubit devices. Here, we study a hybrid
superconducting (aluminium)semiconducting (InSb) island and find that a
magnetic field can induce an even to odd parity transition in the
superconducting ground state. This parity transition can occur when a single,
spinresolved subgap state (i.e. an Andreev bound state, ABS) has crossed zero
energy.In addition, we also find that the magnetic field can cause a change
from 2e to 1e charge quantization while the aluminium remains superconducting.
This observation is compatible with ABS at zero energy or the presence of
Majorana zero modes (MZMs).

Junctions created by coupling two superconductors via a semiconductor
nanowire in the presence of high magnetic fields are the basis for detection,
fusion, and braiding of Majorana bound states. We study NbTiN/InSb
nanowire/NbTiN Josephson junctions and find that their critical currents in the
few mode regime are strongly suppressed by magnetic field. Furthermore, the
dependence of the critical current on magnetic field exhibits gatetunable
nodes. Based on a realistic numerical model we conclude that the Zeeman effect
induced by the magnetic field and the spinorbit interaction in the nanowire
are insufficient to explain the observed evolution of the Josephson effect. We
find the interference between the few occupied onedimensional modes in the
nanowire to be the dominant mechanism responsible for the critical current
behavior. The suppression and nonmonotonic evolution of critical currents at
finite magnetic field should be taken into account when designing circuits
based on Majorana bound states.

Majorana Zero Modes (MZMs) are prime candidates for robust topological
quantum bits, holding a great promise for quantum computing. Semiconducting
nanowires with strong spin orbit coupling offers a promising platform to
harness onedimensional electron transport for Majorana physics. Demonstrating
the topological nature of MZMs relies on braiding, accomplished by moving MZMs
around each other in a certain sequence. Most of the proposed Majorana braiding
circuits require nanowire networks with minimal disorder. Here, the electronic
transport across a junction between two merged InSb nanowires is studied to
investigate how disordered these nanowire networks are. Conductance
quantization plateaus are observed in all contact pairs of the epitaxial InSb
nanowire networks; the hallmark of ballistic transport behavior.

We measured the Josephson radiation emitted by an InSb semiconductor nanowire
junction utilizing photon assisted quasiparticle tunneling in an ACcoupled
superconducting tunnel junction. We quantify the action of the local microwave
environment by evaluating the frequency dependence of the inelastic Cooperpair
tunneling of the nanowire junction and find the zero frequency impedance
$Z(0)=492\,\Omega$ with a cutoff frequency of $f_0=33.1\,$GHz. We extract a
circuit coupling efficiency of $\eta\approx 0.1$ and a detector quantum
efficiency approaching unity in the high frequency limit. In addition to the
Josephson radiation, we identify a shot noise contribution with a Fano factor
of $F=0.88$ which is consistent with the presence of single electron states in
the nanowire channel.

Majorana zero modes (MZMs), prime candidates for topological quantum bits,
are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy
measurements. Implementation of a narrow and high tunnel barrier in the next
generation of Majorana devices can help to achieve the theoretically predicted
quantized height of the ZBP. We propose a materialoriented approach to
engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment
of GaxIn1xSb within an InSb nanowire. By varying the precursor molar fraction
and the growth time, we accurately control the composition and the length of
the barriers. The height and the width of the GaxIn1xSb tunnel barrier are
extracted from the WentzelKramersBrillouin (WKB)fits to the experimental IV
traces.

We present angledependent measurements of the effective gfactor g* in a
GeSi coreshell nanowire quantum dot. g* is found to be maximum when the
magnetic field is pointing perpendicular to both the nanowire and the electric
field induced by local gates. Alignment of the magnetic field with the electric
field reduces g* significantly. g* is almost completely quenched when the
magnetic field is aligned with the nanowire axis. These findings confirm recent
calculations, where the obtained anisotropy is attributed to a Rashbatype
spinorbit interaction induced by heavyhole lighthole mixing. In principle,
this facilitates manipulation of spinorbit qubits by means of a continuous
highfrequency electric field.

Ballistic electron transport is a key requirement for existence of a
topological phase transition in proximitized InSb nanowires. However,
measurements of quantized conductance as direct evidence of ballistic transport
have so far been obscured due to the increased chance of backscattering in one
dimensional nanowires. We show that by improving the nanowiremetal interface
as well as the dielectric environment we can consistently achieve conductance
quantization at zero magnetic field. Additionally, studying the subband
evolution in a rotating magnetic field reveals an orbital degeneracy between
the second and third subbands for perpendicular fields above 1T.

We study the lowtemperature electron mobility of InSb nanowires. We extract
the mobility at 4.2 Kelvin by means of field effect transport measurements
using a model consisting of a nanowiretransistor with contact resistances.
This model enables an accurate extraction of device parameters, thereby
allowing for a systematic study of the nanowire mobility. We identify factors
affecting the mobility, and after optimization obtain a field effect mobility
of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the
reproducibility of these mobility values which are among the highest reported
for nanowires. Our investigations indicate that the mobility is currently
limited by adsorption of molecules to the nanowire surface and/or the
substrate.

Interfacing single photons and electrons is a crucial ingredient for sharing
quantum information between remote solidstate qubits. Semiconductor nanowires
offer the unique possibility to combine optical quantum dots with avalanche
photodiodes, thus enabling the conversion of an incoming single photon into a
macroscopic current for efficient electrical detection. Currently, millions of
excitation events are required to perform electrical readout of an exciton
qubit state. Here we demonstrate multiplication of carriers from only a single
exciton generated in a quantum dot after tunneling into a nanowire avalanche
photodiode. Due to the large amplification of both electrons and holes (>
10^4), we reduce by four orders of magnitude the number of excitation events
required to electrically detect a single exciton generated in a quantum dot.
This work represents a significant step towards singleshot electrical readout
and offers a new functionality for onchip quantum information circuits.

The ability to achieve nearunity light extraction efficiency is necessary
for a truly deterministic single photon source. The most promising method to
reach such high efficiencies is based on embedding single photon emitters in
tapered photonic waveguides defined by topdown etching techniques. However,
light extraction efficiencies in current topdown approaches are limited by
fabrication imperfections and etching induced defects. The efficiency is
further tempered by randomly positioned offaxis quantum emitters. Here, we
present perfectly positioned single quantum dots on the axis of a tailored
nanowire waveguide using bottomup growth. In comparison to quantum dots in
nanowires without waveguide, we demonstrate a 24fold enhancement in the single
photon flux, corresponding to a light extraction efficiency of 42 %. Such high
efficiencies in onedimensional nanowires are promising to transfer quantum
information over large distances between remote stationary qubits using flying
qubits within the same nanowire pn junction.

We demonstrate ultrafast dephasing in the random transport of light through a
layer consisting of strongly scattering GaP nanowires. Dephasing results in a
nonlinear intensity modulation of individual pseudomodes which is 100 times
larger than that of bulk GaP. Different contributions to the nonlinear response
are separated using total transmission, whitelight frequency correlation, and
statistical pseudomode analysis. A dephasing time of $1.2\pm 0.2$~ps is found.
Quantitative agreement is obtained with numerical model calculations which
include photoinduced absorption and deformation of individual scatterers.
Nonlinear dephasing of photonic eigenmodes opens up avenues for ultrafast
control of random lasers, nanophotonic switches, and photon localization.

We report recent progress toward onchip single photon emission and detection
in the near infrared utilizing semiconductor nanowires. Our single photon
emitter is based on a single InAsP quantum dot embedded in a pn junction
defined along the growth axis of an InP nanowire. Under forward bias, light is
emitted from the single quantum dot by electrical injection of electrons and
holes. The optical quality of the quantum dot emission is shown to improve when
surrounding the dot material by a small intrinsic section of InP. Finally, we
report large multiplication factors in excess of 1000 from a single Si nanowire
avalanche photodiode comprised of pdoped, intrinsic, and ndoped sections. The
large multiplication factor obtained from a single Si nanowire opens up the
possibility to detect a single photon at the nanoscale.

Electrical conductance through InAs nanowires is relevant for electronic
applications as well as for fundamental quantum experiments. Here we employ
nominally undoped, slightly tapered InAs nanowires to study the diameter
dependence of their conductance. Contacting multiple sections of each wire, we
can study the diameter dependence within individual wires without the need to
compare different nanowire batches. At room temperature we find a
diameterindependent conductivity for diameters larger than 40 nm, indicative
of threedimensional diffusive transport. For smaller diameters, the resistance
increases considerably, in coincidence with a strong suppression of the
mobility. From an analysis of the effective charge carrier density, we find
indications for a surface accumulation layer.

Semiconductor nanowires provide promising lowdimensional systems for the
study of quantum transport phenomena in combination with superconductivity.
Here we investigate the competition between the Coulomb blockade effect,
Andreev reflection, and quantum interference, in InAs and InP nanowires
connected to aluminumbased superconducting electrodes. We compare three
limiting cases depending on the tunnel coupling strength and the characteristic
Coulomb interaction energy. For weak coupling and large charging energy,
negative differential conductance is observed as a direct consequence of the
BCS density of states in the leads. For intermediate coupling and charging
energy smaller than the superconducting gap, the currentvoltage characteristic
is dominated by Andreev reflection and Coulomb blockade produces an effect only
near zero bias. For almost ideal contact transparencies and negligible charging
energy, we observe universal conductance fluctuations whose amplitude is
enhanced due to Andreev reflection at the contacts.

We report quantum interference effects in InAs semiconductor nanowires
strongly coupled to superconducting electrodes. In the normal state, universal
conductance fluctuations are investigated as a function of magnetic field,
temperature, bias and gate voltage. The results are found to be in good
agreement with theoretical predictions for weakly disordered onedimensional
conductors. In the superconducting state, the fluctuation amplitude is enhanced
by a factor up to ~ 1.6, which is attributed to a doubling of charge transport
via Andreev reflection. At a temperature of 4.2 K, well above the Thouless
temperature, conductance fluctuations are almost entirely suppressed, and the
nanowire conductance exhibits anomalous quantization in steps of e^{2}/h.

We report reproducible fabrication of InPInAsP nanowire light emitting
diodes in which electronhole recombination is restricted to a
quantumdotsized InAsP section. The nanowire geometry naturally selfaligns
the quantum dot with the nInP and pInP ends of the wire, making these devices
promising candidates for electricallydriven quantum optics experiments. We
have investigated the operation of these nanoLEDs with a consistent series of
experiments at room temperature and at 10 K, demonstrating the potential of
this system for single photon applications.

We show how a scanning probe microscope (SPM) can be used to image electron
flow through InAs nanowires, elucidating the physics of nanowire devices on a
local scale. A charged SPM tip is used as a movable gate. Images of nanowire
conductance vs. tip position spatially map the conductance of InAs nanowires at
liquid He temperatures. Plots of conductance vs. back gate voltage without the
tip present show complex patterns of Coulombblockade peaks. Images of nanowire
conductance identify multiple quantum dots located along the nanowire  each
dot is surrounded by a series of concentric rings corresponding to Coulomb
blockade peaks. An image locates the dots and provides information about their
size. The rings around individual dots interfere with each other like Coulomb
blockade peaks of multiple quantum dots in series. In this way, the SPM tip can
probe complex multidot systems by tuning the charge state of individual dots.
The nanowires were grown from metal catalyst particles and have diameters ~ 80
nm and lengths 2 to 3 um.

When two superconductors become electrically connected by a weak link a
zeroresistance supercurrent can flow. This supercurrent is carried by Cooper
pairs of electrons with a combined charge of twice the elementary charge, e.
The 2e charge quantum is clearly visible in the height of Shapiro steps in
Josephson junctions under microwave irradiation and in the magnetic flux
periodicity of h/2e in superconducting quantum interference devices. Several
different materials have been used to weakly couple superconductors, such as
tunnel barriers, normal metals, or semiconductors. Here, we study supercurrents
through a quantum dot created in a semiconductor nanowire by local
electrostatic gating. Due to strong Coulomb interaction, electrons only tunnel
onebyone through the discrete energy levels of the quantum dot. This
nevertheless can yield a supercurrent when subsequent tunnel events are
coherent. These quantum coherent tunnelling processes can result in either a
positive or a negative supercurrent, i.e. in a normal or a pijunction,
respectively. We demonstrate that the supercurrent reverses sign by adding a
single electron spin to the quantum dot. When excited states of the quantum dot
are involved in transport, the supercurrent sign also depends on the character
of the orbital wavefunctions.

Nanoscale superconductorsemiconductor hybrid devices are assembled from InAs
semiconductor nanowires individually contacted by aluminumbased superconductor
electrodes. Below 1 K, the high transparency of the contacts gives rise to
proximityinduced superconductivity. The nanowires form superconducting weak
links operating as mesoscopic Josephson junctions with electrically tunable
coupling. The supercurrent can be switched on/off by a gate voltage acting on
the electron density in the nanowire. A variation in gate voltage induces
universal fluctuations in the normalstate conductance which are clearly
correlated to critical current fluctuations. The ac Josephson effect gives rise
to Shapiro steps in the voltagecurrent characteristic under microwave
irradiation.