
By performing angleresolved photoemission spectroscopy and firstprinciples
calculations, we address the topological phase of CaAgP and investigate the
topological phase transition in CaAg(P1xAsx). We reveal that in CaAgP, the
bulk band gap and surface states with a large bandwidth are topologically
trivial, in agreement with hybrid density functional theory calculations. The
calculations also indicate that application of "negative" hydrostatic pressure
can transform trivial semiconducting CaAgP into an ideal topological nodalline
semimetal phase. The topological transition can be realized by partial
isovalent P/As substitution at x = 0.38.

$\mathrm{MoTe_2}$ has recently been shown to realize in its lowtemperature
phase the typeII Weyl semimetal (WSM). We investigated by time and angle
resolved photoelectron spectroscopy (trARPES) the possible influence of the
Weyl points in the electron dynamics above the Fermi level $\mathrm{E_F}$, by
comparing the ultrafast response of $\mathrm{MoTe_2}$ in the trivial and
topological phases. In the lowtemperature WSM phase, we report an enhanced
relaxation rate of electrons optically excited to the conduction band, which we
interpret as a fingerprint of the local gap closure when Weyl points form. By
contrast, we find that the electron dynamics of the related compound
$\mathrm{WTe_2}$ is slower and temperatureindependent, consistent with a
topologically trivial nature of this material. Our results shows that trARPES
is sensitive to the small modifications of the unoccupied band structure
accompanying the structural and topological phase transition of
$\mathrm{MoTe_2}$.

We report a detailed study of the transport coefficients of
$\beta$Bi$_4$I$_4$ quasione dimensional topological insulator. Electrical
resistivity, thermoelectric power, thermal conductivity and Hall coefficient
measurements are consistent with the possible appearance of a charge density
wave order at low temperatures. Both electrons and holes contribute to the
conduction in $\beta$Bi$_4$I$_4$ and the dominant type of charge carrier
changes with temperature as a consequence of temperaturedependent carrier
densities and mobilities. Measurements of resistivity and Seebeck coefficient
under hydrostatic pressure up to 2 GPa show a shift of the charge density wave
order to higher temperatures suggesting a strongly onedimensional character at
ambient pressure. Surprisingly, superconductivity is induced in
$\beta$Bi$_4$I$_4$ above 10 GPa with of 4.0 K which is slightly decreasing
upon increasing the pressure up to 20 GPa. Chemical characterisation of the
pressuretreated samples shows amorphization of $\beta$Bi$_4$I$_4$ under
pressure and rules out decomposition into Bi and BiI$_3$ at roomtemperature
conditions.

The Weyl semimetal phase is a recently discovered topological quantum state
of matter characterized by the presence of topologically protected degeneracies
near the Fermi level. These degeneracies are the source of exotic phenomena,
including the realization of chiral Weyl fermions as quasiparticles in the bulk
and the formation of Fermi arc states on the surfaces. Here, we demonstrate
that these two key signatures show distinct evolutions with the bulk band
topology by performing angleresolved photoemission spectroscopy, supported by
firstprinciple calculations, on transitionmetal monophosphides. While Weyl
fermion quasiparticles exist only when the chemical potential is located
between two saddle points of the Weyl cone features, the Fermi arc states
extend in a larger energy scale and are robust across the bulk Lifshitz
transitions associated with the recombination of two nontrivial Fermi surfaces
enclosing one Weyl point into a single trivial Fermi surface enclosing two Weyl
points of opposite chirality. Therefore, in some systems (e.g. NbP),
topological Fermi arc states are preserved even if Weyl fermion quasiparticles
are absent in the bulk. Our findings not only provide insight into the
relationship between the exotic physical phenomena and the intrinsic bulk band
topology in Weyl semimetals, but also resolve the apparent puzzle of the
different magnetotransport properties observed in TaAs, TaP and NbP, where the
Fermi arc states are similar.

We here report a detailed highpressure infrared transmission study of BiTeCl
and BiTeBr. We follow the evolution of two band transitions: the optical
excitation $\beta$ between two Rashbasplit conduction bands, and the
absorption $\gamma$ across the band gap. In the low pressure range, $p< 4$~GPa,
for both compounds $\beta$ is approximately constant with pressure and $\gamma$
decreases, in agreement with band structure calculations. In BiTeCl, a clear
pressureinduced phase transition at 6~GPa leads to a different ground state.
For BiTeBr, the pressure evolution is more subtle, and we discuss the
possibility of closing and reopening of the band gap. Our data is consistent
with a Weyl phase in BiTeBr at 5$$6~GPa, followed by the onset of a structural
phase transition at 7~GPa.

The complex electronic properties of $\mathrm{ZrTe_5}$ have recently
stimulated indepth investigations that assigned this material to either a
topological insulator or a 3D Dirac semimetal phase. Here we report a
comprehensive experimental and theoretical study of both electronic and
structural properties of $\mathrm{ZrTe_5}$, revealing that the bulk material is
a strong topological insulator (STI). By means of angleresolved photoelectron
spectroscopy, we identify at the top of the valence band both a surface and a
bulk state. The dispersion of these bands is well captured by ab initio
calculations for the STI case, for the specific interlayer distance measured in
our xray diffraction study. Furthermore, these findings are supported by
scanning tunneling spectroscopy revealing the metallic character of the sample
surface, thus confirming the strong topological nature of $\mathrm{ZrTe_5}$.

The recently discovered typeII Weyl points appear at the boundary between
electron and hole pockets. TypeII Weyl semimetals that host such points are
predicted to exhibit a new type of chiral anomaly and possess thermodynamic
properties very different from their typeI counterparts. In this Letter, we
describe the prediction of a typeII Weyl semimetal phase in the transition
metal diphosphides MoP$_2$ and WP$_2$. These materials are characterized by
relatively simple band structures with four pairs of typeII Weyl points.
Neighboring Weyl points have the same chirality, which makes the predicted
topological phase robust with respect to small perturbations of the crystalline
lattice. In addition, this peculiar arrangement of the Weyl points results in
long topological Fermi arcs, thus making them readily accessible in
angleresolved photoemission spectroscopy.

A Weyl semimetal possesses spinpolarized bandcrossings, called Weyl nodes,
connected by topological surface arcs. The lowenergy excitations near the
crossing points behave the same as massless Weyl fermions, leading to exotic
properties like chiral anomaly. To have the transport properties dominated by
Weyl fermions, Weyl nodes need to locate nearly at the chemical potential and
enclosed by pairs of individual Fermi surfaces with nonzero Fermi Chern
numbers. Combining angleresolved photoemission spectroscopy and
firstprinciples calculation, here we show that TaP is a Weyl semimetal with
only single type of Weyl fermions, topologically distinguished from TaAs where
two types of Weyl fermions contribute to the lowenergy physical properties.
The simple Weyl fermions in TaP are not only of fundamental interests but also
of great potential for future applications. Fermi arcs on the Taterminated
surface are observed, which appear in a different pattern from that on the
Astermination in TaAs and NbAs.

Bulk Rashba systems BiTeX (X = I, Br, Cl) are emerging as important
candidates for developing spintronics devices, because of the coexistence of
spinsplit bulk and surface states, along with the ambipolar character of the
surface charge carriers. The need of studying the spin texture of strongly
spinorbit coupled materials has recently promoted circular dichroic Angular
Resolved Photoelectron Spectroscopy (cdARPES) as an indirect tool to measure
the spin and the angular degrees of freedom. Here we report a detailed photon
energy dependent study of the cdARPES spectra in BiTeX (X = I, Br and Cl). Our
work reveals a large variation of the magnitude and sign of the dichroism.
Interestingly, we find that the dichroic signal modulates differently for the
three compounds and for the different spinsplit states. These findings show a
momentum and photon energy dependence for the cdARPES signals in the bulk
Rashba semiconductor BiTeX (X = I, Br, Cl). Finally, the outcome of our
experiment indicates the important relation between the modulation of the
dichroism and the phase differences between the wavefunctions involved in the
photoemission process. This phase difference can be due to initial or final
state effects. In the former case the phase difference results in possible
interference effects among the photoelectrons emitted from different atomic
layers and characterized by entangled spinorbital polarized bands. In the
latter case the phase difference results from the relative phases of the
expansion of the final state in different outgoing partial waves.

Atomically precise tailoring of graphene can enable unusual transport
pathways and new nanometerscale functional devices. Here we describe a recipe
for the controlled production of highly regular "558" line defects in
graphene by means of simultaneous electron irradiation and Joule heating by
applied electric current. Highresolution transmission electron microscopy
reveals individual steps of the growth process. Extending earlier theoretical
work suggesting valleydiscriminating capabilities of a graphene 558 line
defect, we perform firstprinciples calculations of transport and find a strong
energy dependence of valley polarization of the charge carriers across the
defect. These findings inspire us to propose a compact electrostatically gated
"valley valve" device, a critical component for valleytronics.

The electronic and magnetic properties of individual Fe atoms adsorbed on the
surface of the topological insulator Bi$_2$Te$_3$(111) are investigated.
Scanning tunneling microscopy and spectroscopy prove the existence of two
distinct types of Fe species, while our firstprinciples calculations assign
them to Fe adatoms in the hcp and fcc hollow sites. The combination of xray
magnetic circular dichroism measurements and angular dependent magnetization
curves reveals outofplane anisotropies for both species with anisotropy
constants of $K_{\text{fcc}} = (10 \pm 4)$ meV/atom and $K_{\text{hcp}} = (8
\pm 4)$ meV/atom. These values are well in line with the results of
calculations.

The noncentrosymmetric semiconductor BiTeI exhibits two distinct surface
terminations that support spinsplit Rashba surface states. Their ambipolarity
can be exploited for creating spinpolarized $p$$n$ junctions at the
boundaries between domains with different surface terminations. We use scanning
tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and
investigate their atomic and electronic properties. The Te and Iterminated
surfaces are identified owing to their distinct chemical reactivity, and an
apparent height mismatch of electronic origin. The Rashba surface states are
revealed in the STS spectra by the onset of a van Hove singularity at the band
edge. Eventually, an electronic depletion is found on interfacial Te atoms,
consistent with the formation of a space charge area in typical $p$$n$
junctions.

BiTeI is a giant Rashba spin splitting system, in which a noncentro
symmetric topological phase has recently been suggested to appear under high
pressure. We investigated the optical properties of this compound, reflectivity
and transmission, under pressures up to $15$ GPa. The gap feature in the
optical conductivity vanishes above $p \sim 9$ GPa and does not reappear up to
at least $15$ GPa. The plasma edge, associated with intrinsically doped charge
carriers, is smeared out through a phase transition at $9$ GPa. Using high
pressure Raman spectroscopy, we follow the vibrational modes of BiTeI,
providing additional clear evidence that the transition at 9 GPa involves a
change of crystal structure. This change of crystal structure possibly inhibits
the highpressure topological phase from occurring.

We report a comprehensive study of the paradigmatic quasi1D compound
(TaSe4)2I performed by means of angleresolved photoemission spectroscopy
(ARPES) and firstprinciples electronic structure calculations. We find it to
be a zerogap semiconductor in the nondistorted structure, with nonnegligible
interchain coupling. Theory and experiment support a Peierlslike scenario for
the CDW formation below T_CDW = 263 K, where the incommensurability is a direct
consequence of the finite interchain coupling. The formation of small polarons,
strongly suggested by the ARPES data, explains the puzzling
semiconductortosemiconductor transition observed in transport at T_CDW.

We observe a giant spinorbit splitting in bulk and surface states of the
noncentrosymmetric semiconductor BiTeI. We show that the Fermi level can be
placed in the valence or in the conduction band by controlling the surface
termination. In both cases it intersects spinpolarized bands, in the
corresponding surface depletion and accumulation layers. The momentum splitting
of these bands is not affected by adsorbateinduced changes in the surface
potential. These findings demonstrate that two properties crucial for enabling
semiconductorbased spin electronics  a large, robust spin splitting and
ambipolar conduction  are present in this material.

A new physical mechanism for generating spintransfer torque is proposed. It
is due to interference of bias driven nonequilibrium electrons incident on a
switching junction with the electrons reflected from an insulating barrier
inserted in the junction after the switching magnet. It is shown using the
rigorous Keldysh formalism that this new outofplane torque $T_{\perp}$ is
proportional to an applied bias and is as large as the torque in a conventional
junction generated by a strong charge current. However, the charge current and
the inplane torque $T_{\parallel}$ are almost completely suppressed by the
insulating barrier. This new junction thus offers the highly applicable
possibility of biasinduced switching of magnetization without charge current.