• The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.
  • We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior is observed in one sample which has the characteristic sub-linear conductivity signaling on the presence of short-range disorder in this sample. No square root MR was observed in other samples where short-range scattering is inessential as it is evident from the gate voltage dependences of their conductivities. Comparing our experimental data for the sample with theoretical calculations we found a good qualitative agreement and established the conditions which should be fulfilled in graphene to observe the SRMR experimentally.
  • Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism.
  • The predissociation dynamics of lithium iodide (LiI) in the first excited A-state is investigated for molecules in the gas phase and embedded in helium nanodroplets, using femtosecond pump-probe photoionization spectroscopy. In the gas phase, the transient Li+ and LiI+ ion signals feature damped oscillations due to the excitation and decay of a vibrational wave packet. Based on high-level ab initio calculations of the electronic structure of LiI and simulations of the wave packet dynamics, the exponential signal decay is found to result from predissociation predominantly at the lowest avoided X-A potential curve crossing, for which we infer a coupling constant V=650(20) reciprocal cm. The lack of a pump-probe delay dependence for the case of LiI embedded in helium nanodroplets indicates fast droplet-induced relaxation of the vibrational excitation.
  • We present a comprehensive investigation of the size-dependent switching characteristics and spin wave modes of FePt nanoelements. Curved nanomagnets ("caps") are compared to flat disks of identical diameter and volume over a size range of 100 to 300nm. Quasi-static magnetization reversal analysis using first-order reversal curves (FORC) shows that spherical caps have lower vortex nucleation and annihilation fields than the flat disks. As the element diameter decreases, the reversal mechanism in the caps crosses over sooner to coherent rotation than in the disks. The magnetization dynamics are studied using optically induced small angle precession and reveal a strong size dependence that differs for the two shapes. Flat disks exhibit well-known center and edge modes at all sizes, but as the diameter of the caps increases from 100 to 300 nm, additional oscillation modes appear in agreement with dynamic micromagnetic simulations. In addition, we show that the three-dimensional curvature of the cap causes a much greater sensitivity to the applied field angle which provides an additional way for controlling the ultrafast response of nanomagnetic elements.
  • An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order of 10000 cm^2/(Vs). With a global backgate, the system is tuned from a unipolar n-n' or p-p' junction with different densities to a bipolar p-n junction. Magnetotransport across this junction verifies its nature, showing the expected quantized resistance values as well as the switching with the polarity of the magnetic field. The mixing of edge states at the p-n junction is shown to be supressed at high magnetic fields.
  • The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.
  • Aharonov-Bohm oscillations are observed in a graphene quantum ring with a top gate covering one arm of the ring. As graphene is a gapless semiconductor this geometry allows to study not only the quantum interference of electrons with electrons or holes with holes but also the unique situation of quantum interference between electrons and holes. The period and amplitude of the observed Aharonov-Bohm oscillations are independent of the sign of the applied gate voltage showing the equivalence between unipolar and dipolar interference.
  • Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.
  • Folded single layer graphene forms a system of two decoupled monolayers being only a few Angstroms apart. Using magnetotransport measurements we investigate the electronic properties of the two layers conducting in parallel. We show a method to obtain the mobilities for the individual layers despite them being jointly contacted. The mobilities in the upper layer are significantly larger than in the bottom one indicating weaker substrate influence. This is confirmed by larger transport and quantum scattering times in the top layer. Analyzing the temperature dependence of the Shubnikov-de Haas oscillations effective masses and corresponding Fermi velocities are obtained yielding reduced values down to 66 percent in comparison to monolayers.
  • The doping of Mn in Si is attracting research attentions due to the possibility to fabricate Si-based diluted magnetic semiconductors. However, the low solubility of Mn in Si favors the precipitation of Mn ions even at non-equilibrium growth conditions. MnSi$_{1.7}$ nanoparticles are the common precipitates, which show exotic magnetic properties in comparison with the MnSi$_{1.7}$ bulk phase. In this paper we present the static and dynamic magnetic properties of MnSi$_{1.7}$ nanoparticles. Using the Preisach model, we derive the magnetic parameters, such as the magnetization of individual particles, the distribution of coercive fields and the inter-particle interaction field. Time-dependent magnetization measurements reveal a spin-glass behavior of the system.
  • In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4) can be texturally embedded inside a ZnO matrix by ion implantation and post-annealing. The two kinds of ferrites show different magnetic properties, e.g. coercivity and magnetization. Anomalous Hall effect and positive magnetoresistance have been observed. Our study suggests a ferrimagnet/semiconductor hybrid system for potential applications in magneto-electronics. This hybrid system can be tuned by selecting different transition metal ions (from Mn to Zn) to obtain various magnetic and electronic properties.
  • Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases (Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified as the source for ferromagnetism. Due to their different crystallographic orientation with respect to the host crystal these nanocrystals in some cases are very difficult to be detected by a simple Bragg-Brentano scan. This results in the pitfall of using XRD to exclude secondary phase formation in DMS materials. For comparison, the solubility of Co diluted in ZnO films ranges between 10 and 40 at.% using different growth conditions pulsed laser deposition. Such diluted, Co-doped ZnO films show paramagnetic behaviour. However, only the magnetoresistance of Co-doped ZnO films reveals possible s-d exchange interaction as compared to Co-implanted ZnO single crystals.
  • Sub-gap conductance at a large area junction with a rough interface of a ferromagnet and a high-T$_{C}$ superconductor is superimposed by multiple peaks which is not expected from an ideal point contact Andreev reflection process. We demonstrate this phenomenon by measuring resistance as a function of bias voltage of a Co/Y$_{1}$Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ junction with contact area 50 x 70 $\mu$ $m^{2}$ at various temperatures. In order to analyze such Andreev reflection data, the interface is assumed to have random potentials which can create local electric fields. The Blonder-Tinkham-Klapwijk theory is modified with the inclusion of a broadening parameter due to finite life time effects of quasi particles. An additional voltage drop due to local electric fields at the rough interface has been included in terms of an extra energy shift which may be related to the asymmetry of normalized resistance data. Spin polarization has been introduced for the ferromagnet. The presented model explains the multi-peak nature and asymmetry of Andreev reflection data experimentally observed at large area junctions. Extension of the model also interprets the experimentally observed anomalous enhancement of resistance peaks in the sub-gap region which may result from crossing the critical current limit across the junction.
  • We report temperature dependent Andreev reflection measurements of Co/ Y$_{1}$Ba$_{2}$Cu$_{3}$O$_{7-\delta}$ (YBCO) heterostructure samples with junction areas of 1 $\mu$m diameter. Modelling of the 5-70 K conductivity data according to a modified Blonder-Tinkham-Klapwijk theory yields a spin polarization in Co film amounting to 34% which is almost constant up to 70 K. The YBCO films have been grown by pulsed laser deposition on sapphire substrates. The Co films are deposited by thermal evaporation on YBCO. The film is characterized by powder X-ray diffraction measurements which shows YBCO is grown in (001) direction.The critical current density, 5 x 10$^{6}$ A/cm$^{2}$, in YBCO remains nearly constant after deposition of Co at zero field and 77 K.
  • In this paper we show that ferromagnetism can be induced in pure TiO2 single crystals by oxygen ion irradiation. By combining x-ray diffraction, Raman-scattering, and electron spin resonance spectroscopy, a defect complex, \emph{i.e.} Ti$^{3+}$ ions on the substitutional sites accompanied by oxygen vacancies, has been identified in irradiated TiO2. This kind of defect complex results in a local (TiO$_{6-x}$) stretching Raman mode. We elucidate that Ti$^{3+}$ ions with one unpaired 3d electron provide the local magnetic moments.
  • The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nano-meter scale separation between them.
  • In this chapter we review the magnetic effects produced by proton irradiation on graphite, disordered carbon and fullerene films. The advantage of proton irradiation is twofold: it enables us to make an impurity analysis simultaneously to the implantation of hydrogen. In this chapter we will review the main effects obtained after proton irradiation in different carbon-based structures. This chapter is organized as follows. In section 2 we provide the main characteristics of our irradiation facility. In this section we show an example of element analysis obtained in one of the graphite samples used for the irradiation studies. The irradiation effects are reviewed in section 3. This section is divided in two main subsections that describe the effects in oriented graphite and carbon-based thin films. In section 4 we discuss some of the effects observed after annealing the sample at high temperatures in vacuum or after leaving it at room temperature for a long period of time.
  • Tunneling data on MgB_{1.8}C_{0.2} show a reduction in the energy gap of the pi-bands by a factor of two from undoped MgB2 that is consistent with the Tc reduction, but inconsistent with the expectations of the dirty limit. Dirty-limit theory for undoped MgB2 predicts a single gap about three times larger than measured and a reduced Tc comparable to that measured. Our heavily-doped samples exhibit a uniform dispersion of C suggestive of significantly enhanced scattering, and we conclude that the retention of two-band superconductivity in these samples is caused by a selective suppression of interband scattering.
  • We review our version of the classical field approximation to the dynamics of a finite temperature Bose gas. In the case of a periodic box potential, we investigate the role of the high momentum cut-off, essential in the method. In particular, we show that the cut-off going to infinity limit decribes the particle number going to infinity with the scattering length going to zero. In this weak interaction limit, the relative population of the condensate tends to unity. We also show that the cross-over energy, at which the probability distribution of the condensate occupation changes its character, grows with a growing scattering length. In the more physical case of the condensate in the harmonic trap we investigate the dissipative dynamics of a vortex. We compare the decay time and the velocities of the vortex with the available analytic estimates.
  • Tunneling data on magnesium diboride, MgB_2, are reviewed with a particular focus on superconductor-insulator-superconductor (SIS) junctions formed by a break-junction method. The collective tunneling literature reveals two distinct energy scales, a large gap, Delta_L~7.2 meV, close to the expected BCS value, and a small gap, Delta_S~2.4 meV. The SIS break junctions show clearly that the small gap closes near the bulk critical temperature, T_c=39 K. The SIS spectra allow proximity effects to be ruled out as the cause for the small gap and therefore make a strong case that MgB_2 is a coupled, two-band superconductor. While the break junctions sometimes reveal parallel contributions to the conductance from both bands, it is more often found that Delta_S dominates the spectra. In these cases, a subtle feature is observed near Delta_S+Delta_L that is reminiscent of strong-coupling effects. This feature is consistent with quasiparticle scattering contributions to the interband coupling which provides an important insight into the nature of two-band superconductivity in MgB_2.
  • Superconductor-insulator-superconductor tunnel junctions have been fabricated on MgB2 that display Josephson and quasiparticle currents. These junctions exhibit a gap magnitude, Delta~2.5 meV, that is considerably smaller than the BCS value, but which clearly and reproducibly closes near the bulk Tc. In conjunction with fits of the conductance spectra, these results are interpreted as direct evidence of two-band superconductivity.
  • The superconducting gap Delta has been measured in Bi2Sr2-xLaxCuO6+d single crystals in a wide range of temperatures 4.2 K < T < Tc by point-contact and tunnelling spectroscopy for current in c-direction. The value of Delta(4.2 K) was found to scale with the critical temperature Tc in the whole range of doping levels with the ratio 2D/kTc = 12.5 +/- 2. The closing of the gap Ds at T = Tc has been registered in the underdoped, optimally doped as well as in the overdoped sam-ples.
  • We have measured the superconducting gap Ds in optimally doped samples of BSCCO, TBCCO, HBCCO and HSCCO by Andreev and tunnelling spectroscopy and by ARPES. We have found that the low-temperature value of the gap within experimental errors is linearly increasing with the number n of CuO2 layers in the unit cell of the investigated HTSC-families (n < 4)