
The proximityinduced superconducting state in the 3dimensional topological
insulator HgTe has been studied using electronic transport of a normal
metalsuperconducting point contact as a spectroscopic tool (Andreev point
contact spectroscopy). By analyzing the conductance as a function of voltage
for various temperatures, magnetic fields and gatevoltages, we find evidence,
in equilibrium, for an induced order parameter in HgTe of $70\,\mu$eV and a
niobium order parameter of $1.1\,$meV. To understand the full conductance curve
as a function of applied voltage we suggest a nonequilibrium driven
transformation of the quantum transport process where the relevant scattering
region and equilibrium reservoirs change with voltage. This implies that the
spectroscopy probes the superconducting correlations at different positions in
the sample, depending on the bias voltage.

Frequency analysis of the rf emission of oscillating Josephson supercurrent
is a powerful passive way of probing properties of topological Josephson
junctions. In particular, measurements of the Josephson emission enables to
detect the expected presence of topological gapless Andreev bound states that
give rise to emission at half the Josephson frequency $f_J$, rather than
conventional emission at $f_J$. Here we report direct measurement of rf
emission spectra on Josephson junctions made of HgTebased gatetunable
topological weak links. The emission spectra exhibit a clear signal at half the
Josephson frequency $f_{\rm J}/2$. The linewidths of emission lines indicate a
coherence time of $0.3\SI{4}{ns}$ for the $f_{\rm J}/2$ line, much shorter
than for the $f_{\rm J}$ line ($3\SI{4}{ns}$). These observations strongly
point towards the presence of topological gapless Andreev bound states, and
pave the way for a future HgTebased platform for topological quantum
computation.

The HgTe quantum well (QW) is a wellcharacterized twodimensional
topological insulator (2DTI). Its band gap is relatively small (typically on
the order of 10 meV), which restricts the observation of purely topological
conductance to low temperatures. Here, we utilize the straindependence of the
band structure of HgTe QWs to address this limitation. We use
$\text{CdTe}\text{Cd}_{0.5}\text{Zn}_{0.5}\text{Te}$ strainedlayer
superlattices on GaAs as virtual substrates with adjustable lattice constant to
control the strain of the QW. We present magnetotransport measurements, which
demonstrate a transition from a semi metallic to a 2DTI regime in wide QWs,
when the strain is changed from tensile to compressive. Most notably, we
demonstrate a much enhanced energy gap of 55 meV in heavily compressively
strained QWs. This value exceeds the highest possible gap on common IIVI
substrates by a factor of 23, and extends the regime where the topological
conductance prevails to much higher temperatures.

In this article we review the thermoelectric properties of three terminal
devices with Coulomb coupled quantum dots (QDs) as observed in recent
experiments [1,2]. The system we consider consists of two Coulombblockade QDs
one of which can exchange electrons with only a single reservoir (heat
reservoir) while the other dot is tunnel coupled to two reservoirs at a lower
temperature (conductor). The heat reservoir and the conductor interact only via
the Coulombcoupling of the quantum dots. It has been found that two regimes
have to be considered. In the first one heat flow between the two systems is
small. In this regime thermally driven occupation fluctuations of the hot QD
modify the transport properties of the conductor system. This leads to an
effect called thermal gating. Experiment have shown how this can be used to
control charge flow in the conductor by means of temperature in a remote
reservoir. We further substantiate the observations with model calculations and
implications for the realization of an allthermal transistor are discussed. In
the second regime, heat flow between the two systems is relevant. Here the
system works as a nano scale heat engine, as proposed recently [3]. We review
the conceptual idea, its experimental realization and the novel features
arising in this new kind of thermoelectric device such as decoupling of heat
and charge flow.

Rectification of thermal fluctuations in mesoscopic conductors is the key
idea of today's attempts to build nanoscale thermoelectric energy harvesters in
order to convert heat into a useful electric power. So far, most concepts make
use of the Seebeck effect in a twoterminal geometry where heat and charge are
both carried by the same particles. Here, we experimentally demonstrate the
working principle of a new kind of energy harvester, proposed recently using
two capacitively coupled quantum dots. We show that due to its novel
threeterminal design which spatially separates the heat reservoir from the
conductor circuit, the directions of charge and heat flow become decoupled in
our device. This enables us to manipulate the direction of the generated charge
current by means of external gate voltages while leaving the direction of heat
flow unaffected. Our results pave the way for a new generation of
multiterminal, highly efficient nanoscale heat engines.

The Josephson effect describes the generic appearance of a supercurrent in a
weak link between two superconductors. Its exact physical nature however deeply
influences the properties of the supercurrent. Detailed studies of Josephson
junctions can reveal microscopic properties of the superconducting pairing
(spintriplet correlations, $d$wave symmetry) or of the electronic transport
(quantum dot, ballistic channels). In recent years, considerable efforts have
focused on the coupling of superconductors to topological insulators, in which
transport is mediated by topologically protected Dirac surface states with
helical spin polarization (while the bulk remains insulating). Here, the
proximity of a superconductor is predicted to give rise to unconventional
induced $p$wave superconductivity, with a doublet of topologically protected
gapless Andreev bound states, whose energies varies $4\pi$periodically with
the superconducting phase difference across the junction. In this article, we
report the observation of an anomalous response to rf irradiation in a
Josephson junction with a weak link of the 3D topological insulator HgTe. The
response is understood as due to a $4\pi$periodic contribution to the
supercurrent, and its amplitude is compatible with the expected contribution of
a gapless Andreev doublet.

Threedimensional topological insulators represent a new class of materials
in which transport is governed by Dirac surface states while the bulk remains
insulating. Due to helical spin polarization of the surface states, the
coupling of a 3D topological insulator to a nearby superconductor is expected
to generate unconventional proximity induced $p$wave superconductivity. We
report here on the development and measurements of SQUIDs on the surface of
strained HgTe, a 3D topological insulator, as a potential tool to investigate
this effect.

Conventional $s$wave superconductivity is understood to arise from singlet
pairing of electrons with opposite Fermi momenta, forming Cooper pairs whose
net momentum is zero [1]. Several recent studies have focused on structures
where such conventional $s$wave superconductors are coupled to systems with an
unusual configuration of electronic spin and momentum at the Fermi surface.
Under these conditions, the nature of the paired state can be modified and the
system may even undergo a topological phase transition [2, 3]. Here we present
measurements and theoretical calculations of several HgTe quantum wells coupled
to either aluminum or niobium superconductors and subject to a magnetic field
in the plane of the quantum well. By studying the oscillatory response of
Josephson interference to the magnitude of the inplane magnetic field, we find
that the induced pairing within the quantum well is spatially varying. Cooper
pairs acquire a tunable momentum that grows with magnetic field strength,
directly reflecting the response of the spindependent Fermi surfaces to the
inplane magnetic field. In addition, in the regime of high electron density,
nodes in the induced superconductivity evolve with the electron density in
agreement with our model based on the Hamiltonian of Bernevig, Hughes, and
Zhang [4]. This agreement allows us to quantitatively extract the value of
$\tilde{g}/v_{F}$, where $\tilde{g}$ is the effective gfactor and $v_{F}$ is
the Fermi velocity. However, at low density our measurements do not agree with
our model in detail. Our new understanding of the interplay between spin
physics and superconductivity introduces a way to spatially engineer the order
parameter, as well as a general framework within which to investigate
electronic spin texture at the Fermi surface of materials.

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs)
is considered a milestone in the discovery of topological insulators. The QSH
edge states are predicted to allow current to flow at the edges of an
insulating bulk, as demonstrated in various experiments. A key prediction of
QSH theory that remains to be experimentally verified is the breakdown of the
edge conduction under broken time reversal symmetry (TRS). Here we first
establish a rigorous framework for understanding the magnetic field dependence
of electrostatically gated QSH devices. We then report unexpected edge
conduction under broken TRS, using a unique cryogenic microwave impedance
microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure.
At zero magnetic field and low carrier densities, clear edge conduction is
observed in the local conductivity profile of this device but not in the 5.5 nm
control device whose band structure is trivial. Surprisingly, the edge
conduction in the 7.5 nm device persists up to 9 T with little effect from the
magnetic field. This indicates physics beyond simple QSH models, possibly
associated with material specific properties, other symmetry protection and/or
electronelectron interactions.

We report on a temperatureinduced transition from a conventional
semiconductor to a twodimensional topological insulator investigated by means
of magnetotransport experiments on HgTe/CdTe quantum well structures. At low
temperatures, we are in the regime of the quantum spin Hall effect and observe
an ambipolar quantized Hall resistance by tuning the Fermi energy through the
bulk band gap. At room temperature, we find electron and hole conduction that
can be described by a classical twocarrier model. Above the onset of quantized
magnetotransport at low temperature, we observe a pronounced linear
magnetoresistance that develops from a classical quadratic lowfield
magnetoresistance if electrons and holes coexist. Temperaturedependent bulk
band structure calculations predict a transition from a conventional
semiconductor to a topological insulator in the regime where the linear
magnetoresistance occurs.

We have observed thermal gating, i.e. electrostatic gating induced by hot
electrons. The effect occurs in a device consisting of two capacitively coupled
quantum dots. The double dot system is coupled to a hot electron reservoir on
one side (QD1), whilst the conductance of the second dot (QD2) is monitored.
When a bias across QD2 is applied we observe a current which is strongly
dependent on the temperature of the heat reservoir. This current can be either
enhanced or suppressed, depending on the relative energetic alignment of the QD
levels. Thus, the system can be used to control a charge current by hot
electrons.

We use Superconducting QUantum Interference Device (SQUID) microscopy to
characterize the currentphase relation (CPR) of Josephson Junctions from
3dimentional topological insulator HgTe (3DHgTe). We find clear skewness in
the CPRs of HgTe junctions ranging in length from 200 nm to 600 nm. The
skewness indicates that the Josephson current is predominantly carried by
Andreev bound states with high transmittance, and the fact that the skewness
persists in junctions that are longer than the mean free path suggests that the
effect may be related to the helical nature of the Andreev bound states in the
surface of HgTe.

We report magnetotransport studies on a gated strained HgTe device. This
material is a threedimensional topological insulator and exclusively shows
surface state transport. Remarkably, the Landau level dispersion and the
accuracy of the Hall quantization remain unchanged over a wide density range
($3 \times 10^{11} cm^{2} < n < 1 \times 10^{12} cm^{2}$). This implies that
even at large carrier densities the transport is surface state dominated, where
bulk transport would have been expected to coexist already. Moreover, the
density dependence of the Diractype quantum Hall effect allows to identify the
contributions from the individual surfaces. A $k \cdot p$ model can describe
the experiments, but only when assuming a steep band bending across the regions
where the topological surface states are contained. This steep potential
originates from the specific screening properties of Dirac systems and causes
the gate voltage to influence the position of the Dirac points rather than that
of the Fermi level.

Topological insulators are a newly discovered phase of matter characterized
by a gapped bulk surrounded by novel conducting boundary states. Since their
theoretical discovery, these materials have encouraged intense efforts to study
their properties and capabilities. Among the most striking results of this
activity are proposals to engineer a new variety of superconductor at the
surfaces of topological insulators. These topological superconductors would be
capable of supporting localized Majorana fermions, particles whose braiding
properties have been proposed as the basis of a faulttolerant quantum
computer. Despite the clear theoretical motivation, a conclusive realization of
topological superconductivity remains an outstanding experimental goal. Here we
present measurements of superconductivity induced in twodimensional
HgTe/HgCdTe quantum wells, a material which becomes a quantum spin Hall
insulator when the well width exceeds d_{C}=6.3 nm. In wells that are 7.5 nm
wide, we find that supercurrents are confined to the onedimensional sample
edges as the bulk density is depleted. However, when the well width is
decreased to 4.5 nm the edge supercurrents cannot be distinguished from those
in the bulk. These results provide evidence for superconductivity induced in
the helical edges of the quantum spin Hall effect, a promising step toward the
demonstration of onedimensional topological superconductivity. Our results
also provide a direct measurement of the widths of these edge channels, which
range from 180 nm to 408 nm.

Strained bulk HgTe is a threedimensional topological insulator, whose
surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is
effectively free of mobile charge carriers. These properties enable a study of
transport through its unconventional surface states without being hindered by a
parallel bulk conductance. Here, we show transport experiments on HgTebased
Josephson junctions to investigate the appearance of the predicted Majorana
states at the interface between a topological insulator and a superconductor.
Interestingly, we observe a dissipationless supercurrent flow through the
topological surface states of HgTe. The currentvoltage characteristics are
hysteretic at temperatures below 1 K with critical supercurrents of several
microamperes. Moreover, we observe a magnetic field induced Fraunhofer pattern
of the critical supercurrent, indicating a dominant 2\piperiodic Josephson
effect in the unconventional surface states. Our results show that strained
bulk HgTe is a promising material system to get a better understanding of the
Josephson effect in topological surface states, and to search for the
manifestation of zeroenergy Majorana states in transport experiments.

The quantum spin Hall (QSH) state is a genuinely new state of matter
characterized by a nontrivial topology of its band structure. Its key feature
is conducting edge channels whose spin polarization has potential for
spintronic and quantum information applications. The QSH state was predicted
and experimentally demonstrated to exist in HgTe quantum wells. The existence
of the edge channels has been inferred from the fact that local and nonlocal
conductance values in sufficiently small devices are close to the quantized
values expected for ideal edge channels and from signatures of the spin
polarization. The robustness of the edge channels in larger devices and the
interplay between the edge channels and a conducting bulk are relatively
unexplored experimentally, and are difficult to assess via transport
measurements. Here we image the current in large Hallbars made from HgTe
quantum wells by probing the magnetic field generated by the current using a
scanning superconducting quantum interference device (SQUID). We observe that
the current flows along the edge of the device in the QSH regime, and
furthermore that an identifiable edge channel exists even in the presence of
disorder and considerable bulk conduction as the device is gated or its
temperature is raised. Our results represent a versatile method for the
characterization of new quantum spin Hall materials systems, and confirm both
the existence and the robustness of the predicted edge channels.

The terahertz (THz) frequency range (0.110 THz) fills the gap between the
microwave and optical parts of the electromagnetic spectrum. Recent progress in
the generation and detection of the THz radiation has made it a powerful tool
for fundamental research and resulted in a number of applications. However,
some important components necessary to effectively manipulate THz radiation are
still missing. In particular, active polarization and phase control over a
broad THz band would have major applications in science and technology. It
would, e.g., enable highspeed modulation for wireless communications and
realtime chiral structure spectroscopy of proteins and DNA. In physics, this
technology can be also used to precisely measure very weak Faraday and Kerr
effects, as required, for instance, to probe the electrodynamics of topological
insulators. Phase control of THz radiation has been demonstrated using various
approaches. They depend either on the physical dimensions of the phase plate
(and hence provide a fixed phase shift) or on a mechanically controlled time
delay between optical pulses (and hence prevent fast modulation). Here, we
present data that demonstrate the room temperature giant Faraday effect in HgTe
can be electrically tuned over a wide frequency range (0.11 THz). The
principle of operation is based on the field effect in a thin HgTe semimetal
film. These findings together with the low scattering rate in HgTe open a new
approach for highspeed amplitude and phase modulation in the THz frequency
range.

The discovery of the Quantum Spin Hall state, and topological insulators in
general, has sparked strong experimental efforts. Transport studies of the
Quantum Spin Hall state confirmed the presence of edge states, showed ballistic
edge transport in micronsized samples and demonstrated the spin polarization
of the helical edge states. While these experiments have confirmed the broad
theoretical model, the properties of the QSH edge states have not yet been
investigated on a local scale.
Using Scanning Gate Microscopy to perturb the QSH edge states on a submicron
scale, we identify welllocalized scattering sites which likely limit the
expected nondissipative transport in the helical edge channels. In the
micronsized regions between the scattering sites, the edge states appear to
propagate unperturbed as expected for an ideal QSH system and are found to be
robust against weak induced potential fluctuations.

A strained and undoped HgTe layer is a threedimensional topological
insulator, in which electronic transport occurs dominantly through its surface
states. In this Letter, we present transport measurements on HgTebased
Josephson junctions with Nb as superconductor. Although the NbHgTe interfaces
have a low transparency, we observe a strong zerobias anomaly in the
differential resistance measurements. This anomaly originates from
proximityinduced superconductivity in the HgTe surface states. In the most
transparent junction, we observe periodic oscillations of the differential
resistance as function of an applied magnetic field, which correspond to a
Fraunhoferlike pattern. This unambiguously shows that a precursor of the
Josephson effect occurs in the topological surface states of HgTe.

We present a magnetooptical study of the threedimensional topological
insulator, strained HgTe using a technique which capitalizes on advantages of
timedomain spectroscopy to amplify the signal from the surface states. This
measurement delivers valuable and precise information regarding the surface
state dispersion within <1 meV of the Fermi level. The technique is highly
suitable for the pursuit of the topological magnetoelectric effect and axion
electrodynamics.

While the helical character of the edge channels responsible for charge
transport in the quantum spin Hall regime of a twodimensional topological
insulator is by now well established, an experimental confirmation that the
transport in the edge channels is spinpolarized is still outstanding. We
report experiments on nanostructures fabricated from HgTe quantum wells with an
inverted band structure, in which a split gate technique allows us to combine
both quantum spin Hall and metallic spin Hall transport in a single device. In
these devices, the quantum spin Hall effect can be used as a spin current
injector and detector for the metallic spin Hall effect, and vice versa,
allowing for an allelectrical detection of spin polarization.

We present direct experimental evidence for nonlocal transport in HgTe
quantum wells in the quantum spin Hall regime, in the absence of any external
magnetic field. The data conclusively show that the nondissipative quantum
transport occurs through edge channels, while the contacts lead to
equilibration between the counterpropagating spin states at the edge. We show
that the experimental data agree quantitatively with the theory of the quantum
spin Hall effect.

The search for topologically nontrivial states of matter has become an
important goal for condensed matter physics. Recently, a new class of
topological insulators has been proposed. These topological insulators have an
insulating gap in the bulk, but have topologically protected edge states due to
the time reversal symmetry. In two dimensions the helical edge states give rise
to the quantum spin Hall (QSH) effect, in the absence of any external magnetic
field. Here we review a recent theory which predicts that the QSH state can be
realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of
the quantum well, the band structure changes from a normal to an "inverted"
type at a critical thickness $d_c$. We present an analytical solution of the
helical edge states and explicitly demonstrate their topological stability. We
also review the recent experimental observation of the QSH state in
HgTe/(Hg,Cd)Te quantum wells. We review both the fabrication of the sample and
the experimental setup. For thin quantum wells with well width $d_{QW}< 6.3$
nm, the insulating regime shows the conventional behavior of vanishingly small
conductance at low temperature. However, for thicker quantum wells ($d_{QW}>
6.3$ nm), the nominally insulating regime shows a plateau of residual
conductance close to $2e^2/h$. The residual conductance is independent of the
sample width, indicating that it is caused by edge states. Furthermore, the
residual conductance is destroyed by a small external magnetic field. The
quantum phase transition at the critical thickness, $d_c= 6.3$ nm, is also
independently determined from the occurrence of a magnetic field induced
insulator to metal transition.