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A non-vanishing electric field inside a non-centrosymmetric bulk crystal
transforms into a momentum- dependent magnetic field, namely, a spin-orbit
field (SOF). SOFs are of great use in spintronics because they enable spin
manipulation via the electric field. At the same time, however, spintronic
applications are severely limited by the SOF, as electrons traversing the SOF
easily lose their spin information. Here, we propose that in-plane
ferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOF
in a reconcilable way to enable electrical spin controllability and suppress
spin dephasing. The in-plane ferroelectricity produces a unidirectional
out-of-plane Rashba SOF that can host a long-lived helical spin mode known as a
persistent spin helix (PSH). Through direct coupling between the inversion
asymmetry and the SOF, the ferroelectric switching reverses the out-of-plane
Rashba SOF, giving rise to a maximally field-tunable PSH. Furthermore, the
giant out- of-plane Rashba SOF seen in the SnTe thin films is linked to the
nano-sized PSH, potentially reducing spintronic device sizes to the nanoscale.
We combine the two ferroelectric-coupled degrees of freedom, longitudinal
charge and transverse PSH, to design intersectional electro-spintronic
transistors governed by non-volatile ferroelectric switching within nanoscale
lateral and atomic-thick vertical dimensions.
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The valley degree of freedom and the possibility of spin-valley coupling of
solid materials have attracted growing interest, and the relaxation dynamics of
spin- and valley-polarized states has become an important focus of recent
studies. In spin-orbit-coupled inversion-asymmetric two-dimensional materials,
such as MoS_{2} it has been found that the spin randomization is
characteristically faster than the time scales for inter- and intra-valley
scatterings. In this study, we examined the ultrafast non-collinear spin
dynamics of an electron valley in monolayer MoS_{2} by using real-time
propagation time-dependent density functional theory. We found that the spin
precession of an electron in the valley is sharply coupled with the
lowest-lying optical phonon that release the in-plane mirror symmetry. This
indicates that the spin randomization of MoS_{2} is mainly caused by
spin-phonon interaction. We further suggest that flipping of spins in a
spin-orbit-coupled system can be achieved by the control over phonons.
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Until recently, spin-polarization in nonmagnetic materials was the exclusive
territory of non- centrosymmetric structures. It was recently shown that a form
of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in
globally centrosymmetric crystals provided the individual layers belong to
polar point group symmetries. This realization could considerably broaden the
range of materials that might be considered for spin-polarization spintronic
applications to include the hitherto forbidden spintronic compound that belong
to centrosymetric symmetries. Here we take the necessary steps to transition
from such general, material-agnostic condensed matter theory arguments to
material-specific design principles that could aid future laboratory search of
R-2 materials. Specifically, we (i) classify different prototype layered
structures that have been broadly studied in the literature in terms of their
expected R-2 behavior, including the Bi2Se3-structure type (a prototype
topological insulator), MoS2-structure type (a prototype valleytronic compound)
and LaBiOS2-structure type (a host of superconductivity upon doping); (ii)
formulate the properties that ideal R-2 compounds should have in terms of
combination of their global unit cell symmetries with specific point group
symmetries of their constituent sectors; (iii) use first-principles band theory
to search for compounds from the prototype family of LaOBiS2-type structures
that satisfy these R-2 design metrics. We initially consider both stable and
hypothetical compounds to establish an understanding of trends of R-2 with
composition, and then indicate the predictions that are expected to be stable
and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes
in LaOBiTe2) as well as surface Rashba states. Experimental testing of such
predictions is called for.
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The entanglement of the spin and orbital degrees of freedom through the
spin-orbit coupling has been actively studied in condensed matter physics. In
several iridium-oxide systems, the spin-orbital entangled state, identified by
the effective angular momentum $j_{\rm eff}$, can host novel quantum phases
with the help of electron correlations. Here, we show that a series of lacunar
spinel compounds, Ga$M_4X_8$ ($M$ = Nb, Mo, Ta, and W and $X$ = S, Se, and Te),
gives rise to a $\textit{molecular}$ $j_{\rm eff}$ state as a new spin-orbital
composite on which the low energy effective Hamiltonian is based. A wide range
of electron correlations is accessible by tuning the bandwidth under external
and/or chemical pressure, enabling us to investigate the interesting
cooperation between spin-orbit coupling and electron correlations. As
illustrative examples, a two-dimensional topological insulating phase and an
anisotropic spin Hamiltonian are investigated in the weak and strong coupling
regimes, respectively. Our finding can provide an ideal platform for exploring
$j_{\rm eff}$ physics and the resulting emergent phenomena.
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We study the general phase diagram of correlated electrons for iridium-based
(Ir) compounds on the hyperhoneycomb lattice---a crystal structure where the
Ir$^{4+}$ ions form a three-dimensional network with three-fold coordination
recently realized in the $\beta$-Li${}_{2}$IrO${}_{3}$ compound. Using a
combination of microscopic derivations, symmetry analysis, and density
functional calculations, we determine the general model for the electrons
occupying the $j_{\text{eff}}=1/2$ orbitals at the Ir$^{4+}$ sites. In the
non-interacting limit, we find that this model allows for both topological and
trivial electronic band insulators along with metallic states. The effect of
Hubbard-type electron-electron repulsion on the above electronic structure in
stabilizing $\mathbf{q}=\mathbf{0}$ magnetic order reveals a phase diagram with
continuous phase transition between a topological band insulator and a Neel
ordered magnetic insulator.
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We examined the temperature (T) evolution of the optical conductivity spectra
of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely
insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy
features of the optical d-d excitation (${\hbar}{\omega}$ $<$ 0.3 eV) evolved
drastically, whereas such evolution was not observed for the O K-edge X-ray
absorption spectra. This suggests that the T evolution in optical spectra is
not caused by a change in the bare (undressed) electronic structure, but
instead, presumably originates from an abundance of phonon-assisted indirect
excitations. Our results showed that the low-energy excitations were dominated
by phonon-absorption processes which involve, in particular, the optical
phonons. This implies that phonon-assisted processes significantly facilitate
the charge dynamics in barely insulating Sr$_3$Ir$_2$O$_7$.
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We predict a quantum phase transition from normal to topological insulators
in the 5$d$ transition metal oxide Na$_2$IrO$_3$, where the transition can be
driven by the change of the long-range hopping and trigonal crystal field
terms. From the first-principles-derived tight-binding Hamiltonian we determine
the phase boundary through the parity analysis. In addition, our
first-principles calculations for Na$_2$IrO$_3$ model structures show that the
interlayer distance can be an important parameter for the existence of a
three-dimensional strong topological insulator phase. Na$_2$IrO$_3$ is
suggested to be a candidate material which can have both a nontrivial topology
of bands and strong electron correlations.
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Here, we theoretically predict that the series of Pb-based layered
chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible
new candidates for topological insulators. As $n$ increases, the phase
transition from a topological insulator to a band insulator is found to occur
between $n=2$ and 3 for both series. Significantly, among the new topological
insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one
of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is
located in the immediate vicinity of the topological phase boundary, making its
topological phase easily tunable by changing external parameters such as
lattice constants. Due to the three-dimensional Dirac cone at the phase
boundary, massless Dirac fermions also may be easily accessible in
Pb$_2$Sb$_2$Te$_5$.
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Topological insulators are distinguished from normal insulators by their bulk
insulating gap and odd number of surface states connecting the inverted
conduction and valence bands and showing Dirac cones at the time-reversal
invariant points in the Brillouin zone. Bi-based three-dimensional strong
topological insulator materials, Bi$_2$Se$_3$ and Bi$_2$Te$_2$, are known as
high temperature topological insulators for their relatively large bulk gap and
have one simple Dirac cone at the $\Gamma$ point. In spite of their clear
surface state Dirac cone features, the Dirac point known as a Kramers point and
the topological transport regime is located below the bulk valence band
maximum. As a result of a non-isolated Dirac point, the topological transport
regime can not be acquired and there possibly exist scattering channels between
surface and bulk states as well. In this article we show that an ideal and
isolated Dirac cone is realized in a slab geometry made of Bi$_2$Se$_3$ with
appropriate substitutions of surface Se atoms. In addition to Dirac cone
engineering by surface atom substitutions, we also investigate Bi$_2$Se$_3$
thin films in terms of thickness and magnetic substitutions, which can be
linked to applications of spintronics devices.
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We investigated the temperature-dependent evolution of the electronic
structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy.
The optical conductivity spectra $\sigma(\omega)$ of this compound has recently
been found to exhibit two d-d transitions associated with the transition
between the Jeff,1/2 and Jeff,3/2 bands due to the cooperation of the electron
correlation and spin-orbit coupling. As the temperature increases, the two
peaks show significant changes resulting in a decrease in the Mott gap. The
experimental observations are compared with the results of first-principles
calculation in consideration of increasing bandwidth. We discuss the effect of
the temperature change on the electronic structure of Sr2IrO4 in terms of local
lattice distortion, excitonic effect, electron-phonon coupling, and magnetic
ordering.
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We present a microscopic model for the anisotropic exchange interactions in
Sr$_{2}$IrO$_{4}$. A direct construction of Wannier functions from
first-principles calculations proves the $j_{\mathrm{eff}}$=1/2 character of
the spin-orbit integrated states at the Fermi level. An effective
$j_{\mathrm{eff}}$-spin Hamiltonian explains the observed weak ferromagnetism
and anisotropy of antiferromagnetically ordered magnetic state, which arise
naturally from the $j_{\mathrm{eff}}$=1/2 state with a rotation of IrO$_{6}$
octahedra. It is suggested that Sr$_{2}$IrO$_{4}$ is a unique class of
materials with effective exchange interactions in the spin-orbital Hilbert
space.
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We present an anti-ferromagnetically ordered ground state of
Na$_{2}$IrO$_{3}$ based on density-functional-theory calculations including
both spin-orbit coupling and on-site Coulomb interaction $U$. We show that the
splitting of $e_{g}'$ doublet states by the strong spin-orbit coupling is
mainly responsible for the intriguing nature of its insulating gap and magnetic
ground state. Due to its proximity to the spin-orbit insulator phase, the
magnetic ordering as obtained with finite $U$ is found to exhibit a strong
in-plane anisotropy. The phase diagram of Na$_{2}$IrO$_{3}$ suggests a possible
interplay between spin-orbit insulator and Mott anti-ferromagnetic insulator
phases.
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We investigated electronic structure of 5d transition-metal oxide Sr2IrO4
using angle-resolved photoemission, optical conductivity, and x-ray absorption
measurements and first-principles band calculations. The system was found to be
well described by novel effective total angular momentum Jeff states, in which
relativistic spin-orbit (SO) coupling is fully taken into account under a large
crystal field. Despite of delocalized Ir 5d states, the Jeff-states form so
narrow bands that even a small correlation energy leads to the Jeff = 1/2 Mott
ground state with unique electronic and magnetic behaviors, suggesting a new
class of the Jeff quantum spin driven correlated-electron phenomena.