A non-vanishing electric field inside a non-centrosymmetric bulk crystal transforms into a momentum- dependent magnetic field, namely, a spin-orbit field (SOF). SOFs are of great use in spintronics because they enable spin manipulation via the electric field. At the same time, however, spintronic applications are severely limited by the SOF, as electrons traversing the SOF easily lose their spin information. Here, we propose that in-plane ferroelectricity in (001)-oriented SnTe thin films harness the Janus-faced SOF in a reconcilable way to enable electrical spin controllability and suppress spin dephasing. The in-plane ferroelectricity produces a unidirectional out-of-plane Rashba SOF that can host a long-lived helical spin mode known as a persistent spin helix (PSH). Through direct coupling between the inversion asymmetry and the SOF, the ferroelectric switching reverses the out-of-plane Rashba SOF, giving rise to a maximally field-tunable PSH. Furthermore, the giant out- of-plane Rashba SOF seen in the SnTe thin films is linked to the nano-sized PSH, potentially reducing spintronic device sizes to the nanoscale. We combine the two ferroelectric-coupled degrees of freedom, longitudinal charge and transverse PSH, to design intersectional electro-spintronic transistors governed by non-volatile ferroelectric switching within nanoscale lateral and atomic-thick vertical dimensions.

The valley degree of freedom and the possibility of spin-valley coupling of solid materials have attracted growing interest, and the relaxation dynamics of spin- and valley-polarized states has become an important focus of recent studies. In spin-orbit-coupled inversion-asymmetric two-dimensional materials, such as MoS_{2} it has been found that the spin randomization is characteristically faster than the time scales for inter- and intra-valley scatterings. In this study, we examined the ultrafast non-collinear spin dynamics of an electron valley in monolayer MoS_{2} by using real-time propagation time-dependent density functional theory. We found that the spin precession of an electron in the valley is sharply coupled with the lowest-lying optical phonon that release the in-plane mirror symmetry. This indicates that the spin randomization of MoS_{2} is mainly caused by spin-phonon interaction. We further suggest that flipping of spins in a spin-orbit-coupled system can be achieved by the control over phonons.

Until recently, spin-polarization in nonmagnetic materials was the exclusive territory of non- centrosymmetric structures. It was recently shown that a form of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto forbidden spintronic compound that belong to centrosymetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific design principles that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound) and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent sectors; (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for.

The entanglement of the spin and orbital degrees of freedom through the spin-orbit coupling has been actively studied in condensed matter physics. In several iridium-oxide systems, the spin-orbital entangled state, identified by the effective angular momentum $j_{\rm eff}$, can host novel quantum phases with the help of electron correlations. Here, we show that a series of lacunar spinel compounds, Ga$M_4X_8$ ($M$ = Nb, Mo, Ta, and W and $X$ = S, Se, and Te), gives rise to a $\textit{molecular}$ $j_{\rm eff}$ state as a new spin-orbital composite on which the low energy effective Hamiltonian is based. A wide range of electron correlations is accessible by tuning the bandwidth under external and/or chemical pressure, enabling us to investigate the interesting cooperation between spin-orbit coupling and electron correlations. As illustrative examples, a two-dimensional topological insulating phase and an anisotropic spin Hamiltonian are investigated in the weak and strong coupling regimes, respectively. Our finding can provide an ideal platform for exploring $j_{\rm eff}$ physics and the resulting emergent phenomena.

We study the general phase diagram of correlated electrons for iridium-based (Ir) compounds on the hyperhoneycomb lattice---a crystal structure where the Ir$^{4+}$ ions form a three-dimensional network with three-fold coordination recently realized in the $\beta$-Li${}_{2}$IrO${}_{3}$ compound. Using a combination of microscopic derivations, symmetry analysis, and density functional calculations, we determine the general model for the electrons occupying the $j_{\text{eff}}=1/2$ orbitals at the Ir$^{4+}$ sites. In the non-interacting limit, we find that this model allows for both topological and trivial electronic band insulators along with metallic states. The effect of Hubbard-type electron-electron repulsion on the above electronic structure in stabilizing $\mathbf{q}=\mathbf{0}$ magnetic order reveals a phase diagram with continuous phase transition between a topological band insulator and a Neel ordered magnetic insulator.

We examined the temperature (T) evolution of the optical conductivity spectra of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy features of the optical d-d excitation (${\hbar}{\omega}$ $<$ 0.3 eV) evolved drastically, whereas such evolution was not observed for the O K-edge X-ray absorption spectra. This suggests that the T evolution in optical spectra is not caused by a change in the bare (undressed) electronic structure, but instead, presumably originates from an abundance of phonon-assisted indirect excitations. Our results showed that the low-energy excitations were dominated by phonon-absorption processes which involve, in particular, the optical phonons. This implies that phonon-assisted processes significantly facilitate the charge dynamics in barely insulating Sr$_3$Ir$_2$O$_7$.

We predict a quantum phase transition from normal to topological insulators in the 5$d$ transition metal oxide Na$_2$IrO$_3$, where the transition can be driven by the change of the long-range hopping and trigonal crystal field terms. From the first-principles-derived tight-binding Hamiltonian we determine the phase boundary through the parity analysis. In addition, our first-principles calculations for Na$_2$IrO$_3$ model structures show that the interlayer distance can be an important parameter for the existence of a three-dimensional strong topological insulator phase. Na$_2$IrO$_3$ is suggested to be a candidate material which can have both a nontrivial topology of bands and strong electron correlations.

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$.

Topological insulators are distinguished from normal insulators by their bulk insulating gap and odd number of surface states connecting the inverted conduction and valence bands and showing Dirac cones at the time-reversal invariant points in the Brillouin zone. Bi-based three-dimensional strong topological insulator materials, Bi$_2$Se$_3$ and Bi$_2$Te$_2$, are known as high temperature topological insulators for their relatively large bulk gap and have one simple Dirac cone at the $\Gamma$ point. In spite of their clear surface state Dirac cone features, the Dirac point known as a Kramers point and the topological transport regime is located below the bulk valence band maximum. As a result of a non-isolated Dirac point, the topological transport regime can not be acquired and there possibly exist scattering channels between surface and bulk states as well. In this article we show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi$_2$Se$_3$ with appropriate substitutions of surface Se atoms. In addition to Dirac cone engineering by surface atom substitutions, we also investigate Bi$_2$Se$_3$ thin films in terms of thickness and magnetic substitutions, which can be linked to applications of spintronics devices.

We investigated the temperature-dependent evolution of the electronic structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy. The optical conductivity spectra $\sigma(\omega)$ of this compound has recently been found to exhibit two d-d transitions associated with the transition between the Jeff,1/2 and Jeff,3/2 bands due to the cooperation of the electron correlation and spin-orbit coupling. As the temperature increases, the two peaks show significant changes resulting in a decrease in the Mott gap. The experimental observations are compared with the results of first-principles calculation in consideration of increasing bandwidth. We discuss the effect of the temperature change on the electronic structure of Sr2IrO4 in terms of local lattice distortion, excitonic effect, electron-phonon coupling, and magnetic ordering.

We present a microscopic model for the anisotropic exchange interactions in Sr$_{2}$IrO$_{4}$. A direct construction of Wannier functions from first-principles calculations proves the $j_{\mathrm{eff}}$=1/2 character of the spin-orbit integrated states at the Fermi level. An effective $j_{\mathrm{eff}}$-spin Hamiltonian explains the observed weak ferromagnetism and anisotropy of antiferromagnetically ordered magnetic state, which arise naturally from the $j_{\mathrm{eff}}$=1/2 state with a rotation of IrO$_{6}$ octahedra. It is suggested that Sr$_{2}$IrO$_{4}$ is a unique class of materials with effective exchange interactions in the spin-orbital Hilbert space.

We present an anti-ferromagnetically ordered ground state of Na$_{2}$IrO$_{3}$ based on density-functional-theory calculations including both spin-orbit coupling and on-site Coulomb interaction $U$. We show that the splitting of $e_{g}'$ doublet states by the strong spin-orbit coupling is mainly responsible for the intriguing nature of its insulating gap and magnetic ground state. Due to its proximity to the spin-orbit insulator phase, the magnetic ordering as obtained with finite $U$ is found to exhibit a strong in-plane anisotropy. The phase diagram of Na$_{2}$IrO$_{3}$ suggests a possible interplay between spin-orbit insulator and Mott anti-ferromagnetic insulator phases.

We investigated electronic structure of 5d transition-metal oxide Sr2IrO4 using angle-resolved photoemission, optical conductivity, and x-ray absorption measurements and first-principles band calculations. The system was found to be well described by novel effective total angular momentum Jeff states, in which relativistic spin-orbit (SO) coupling is fully taken into account under a large crystal field. Despite of delocalized Ir 5d states, the Jeff-states form so narrow bands that even a small correlation energy leads to the Jeff = 1/2 Mott ground state with unique electronic and magnetic behaviors, suggesting a new class of the Jeff quantum spin driven correlated-electron phenomena.