
A nonvanishing electric field inside a noncentrosymmetric bulk crystal
transforms into a momentum dependent magnetic field, namely, a spinorbit
field (SOF). SOFs are of great use in spintronics because they enable spin
manipulation via the electric field. At the same time, however, spintronic
applications are severely limited by the SOF, as electrons traversing the SOF
easily lose their spin information. Here, we propose that inplane
ferroelectricity in (001)oriented SnTe thin films harness the Janusfaced SOF
in a reconcilable way to enable electrical spin controllability and suppress
spin dephasing. The inplane ferroelectricity produces a unidirectional
outofplane Rashba SOF that can host a longlived helical spin mode known as a
persistent spin helix (PSH). Through direct coupling between the inversion
asymmetry and the SOF, the ferroelectric switching reverses the outofplane
Rashba SOF, giving rise to a maximally fieldtunable PSH. Furthermore, the
giant out ofplane Rashba SOF seen in the SnTe thin films is linked to the
nanosized PSH, potentially reducing spintronic device sizes to the nanoscale.
We combine the two ferroelectriccoupled degrees of freedom, longitudinal
charge and transverse PSH, to design intersectional electrospintronic
transistors governed by nonvolatile ferroelectric switching within nanoscale
lateral and atomicthick vertical dimensions.

The valley degree of freedom and the possibility of spinvalley coupling of
solid materials have attracted growing interest, and the relaxation dynamics of
spin and valleypolarized states has become an important focus of recent
studies. In spinorbitcoupled inversionasymmetric twodimensional materials,
such as MoS_{2} it has been found that the spin randomization is
characteristically faster than the time scales for inter and intravalley
scatterings. In this study, we examined the ultrafast noncollinear spin
dynamics of an electron valley in monolayer MoS_{2} by using realtime
propagation timedependent density functional theory. We found that the spin
precession of an electron in the valley is sharply coupled with the
lowestlying optical phonon that release the inplane mirror symmetry. This
indicates that the spin randomization of MoS_{2} is mainly caused by
spinphonon interaction. We further suggest that flipping of spins in a
spinorbitcoupled system can be achieved by the control over phonons.

Until recently, spinpolarization in nonmagnetic materials was the exclusive
territory of non centrosymmetric structures. It was recently shown that a form
of hidden spin polarization (named the Rashba2 or R2 effect) could exist in
globally centrosymmetric crystals provided the individual layers belong to
polar point group symmetries. This realization could considerably broaden the
range of materials that might be considered for spinpolarization spintronic
applications to include the hitherto forbidden spintronic compound that belong
to centrosymetric symmetries. Here we take the necessary steps to transition
from such general, materialagnostic condensed matter theory arguments to
materialspecific design principles that could aid future laboratory search of
R2 materials. Specifically, we (i) classify different prototype layered
structures that have been broadly studied in the literature in terms of their
expected R2 behavior, including the Bi2Se3structure type (a prototype
topological insulator), MoS2structure type (a prototype valleytronic compound)
and LaBiOS2structure type (a host of superconductivity upon doping); (ii)
formulate the properties that ideal R2 compounds should have in terms of
combination of their global unit cell symmetries with specific point group
symmetries of their constituent sectors; (iii) use firstprinciples band theory
to search for compounds from the prototype family of LaOBiS2type structures
that satisfy these R2 design metrics. We initially consider both stable and
hypothetical compounds to establish an understanding of trends of R2 with
composition, and then indicate the predictions that are expected to be stable
and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes
in LaOBiTe2) as well as surface Rashba states. Experimental testing of such
predictions is called for.

The entanglement of the spin and orbital degrees of freedom through the
spinorbit coupling has been actively studied in condensed matter physics. In
several iridiumoxide systems, the spinorbital entangled state, identified by
the effective angular momentum $j_{\rm eff}$, can host novel quantum phases
with the help of electron correlations. Here, we show that a series of lacunar
spinel compounds, Ga$M_4X_8$ ($M$ = Nb, Mo, Ta, and W and $X$ = S, Se, and Te),
gives rise to a $\textit{molecular}$ $j_{\rm eff}$ state as a new spinorbital
composite on which the low energy effective Hamiltonian is based. A wide range
of electron correlations is accessible by tuning the bandwidth under external
and/or chemical pressure, enabling us to investigate the interesting
cooperation between spinorbit coupling and electron correlations. As
illustrative examples, a twodimensional topological insulating phase and an
anisotropic spin Hamiltonian are investigated in the weak and strong coupling
regimes, respectively. Our finding can provide an ideal platform for exploring
$j_{\rm eff}$ physics and the resulting emergent phenomena.

We study the general phase diagram of correlated electrons for iridiumbased
(Ir) compounds on the hyperhoneycomb latticea crystal structure where the
Ir$^{4+}$ ions form a threedimensional network with threefold coordination
recently realized in the $\beta$Li${}_{2}$IrO${}_{3}$ compound. Using a
combination of microscopic derivations, symmetry analysis, and density
functional calculations, we determine the general model for the electrons
occupying the $j_{\text{eff}}=1/2$ orbitals at the Ir$^{4+}$ sites. In the
noninteracting limit, we find that this model allows for both topological and
trivial electronic band insulators along with metallic states. The effect of
Hubbardtype electronelectron repulsion on the above electronic structure in
stabilizing $\mathbf{q}=\mathbf{0}$ magnetic order reveals a phase diagram with
continuous phase transition between a topological band insulator and a Neel
ordered magnetic insulator.

We examined the temperature (T) evolution of the optical conductivity spectra
of Sr$_3$Ir$_2$O$_7$ over a wide range of 10400 K. The system was barely
insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The lowenergy
features of the optical dd excitation (${\hbar}{\omega}$ $<$ 0.3 eV) evolved
drastically, whereas such evolution was not observed for the O Kedge Xray
absorption spectra. This suggests that the T evolution in optical spectra is
not caused by a change in the bare (undressed) electronic structure, but
instead, presumably originates from an abundance of phononassisted indirect
excitations. Our results showed that the lowenergy excitations were dominated
by phononabsorption processes which involve, in particular, the optical
phonons. This implies that phononassisted processes significantly facilitate
the charge dynamics in barely insulating Sr$_3$Ir$_2$O$_7$.

We predict a quantum phase transition from normal to topological insulators
in the 5$d$ transition metal oxide Na$_2$IrO$_3$, where the transition can be
driven by the change of the longrange hopping and trigonal crystal field
terms. From the firstprinciplesderived tightbinding Hamiltonian we determine
the phase boundary through the parity analysis. In addition, our
firstprinciples calculations for Na$_2$IrO$_3$ model structures show that the
interlayer distance can be an important parameter for the existence of a
threedimensional strong topological insulator phase. Na$_2$IrO$_3$ is
suggested to be a candidate material which can have both a nontrivial topology
of bands and strong electron correlations.

Here, we theoretically predict that the series of Pbbased layered
chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible
new candidates for topological insulators. As $n$ increases, the phase
transition from a topological insulator to a band insulator is found to occur
between $n=2$ and 3 for both series. Significantly, among the new topological
insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one
of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is
located in the immediate vicinity of the topological phase boundary, making its
topological phase easily tunable by changing external parameters such as
lattice constants. Due to the threedimensional Dirac cone at the phase
boundary, massless Dirac fermions also may be easily accessible in
Pb$_2$Sb$_2$Te$_5$.

Topological insulators are distinguished from normal insulators by their bulk
insulating gap and odd number of surface states connecting the inverted
conduction and valence bands and showing Dirac cones at the timereversal
invariant points in the Brillouin zone. Bibased threedimensional strong
topological insulator materials, Bi$_2$Se$_3$ and Bi$_2$Te$_2$, are known as
high temperature topological insulators for their relatively large bulk gap and
have one simple Dirac cone at the $\Gamma$ point. In spite of their clear
surface state Dirac cone features, the Dirac point known as a Kramers point and
the topological transport regime is located below the bulk valence band
maximum. As a result of a nonisolated Dirac point, the topological transport
regime can not be acquired and there possibly exist scattering channels between
surface and bulk states as well. In this article we show that an ideal and
isolated Dirac cone is realized in a slab geometry made of Bi$_2$Se$_3$ with
appropriate substitutions of surface Se atoms. In addition to Dirac cone
engineering by surface atom substitutions, we also investigate Bi$_2$Se$_3$
thin films in terms of thickness and magnetic substitutions, which can be
linked to applications of spintronics devices.

We investigated the temperaturedependent evolution of the electronic
structure of the Jeff,1/2 Mott insulator Sr2IrO4 using optical spectroscopy.
The optical conductivity spectra $\sigma(\omega)$ of this compound has recently
been found to exhibit two dd transitions associated with the transition
between the Jeff,1/2 and Jeff,3/2 bands due to the cooperation of the electron
correlation and spinorbit coupling. As the temperature increases, the two
peaks show significant changes resulting in a decrease in the Mott gap. The
experimental observations are compared with the results of firstprinciples
calculation in consideration of increasing bandwidth. We discuss the effect of
the temperature change on the electronic structure of Sr2IrO4 in terms of local
lattice distortion, excitonic effect, electronphonon coupling, and magnetic
ordering.

We present a microscopic model for the anisotropic exchange interactions in
Sr$_{2}$IrO$_{4}$. A direct construction of Wannier functions from
firstprinciples calculations proves the $j_{\mathrm{eff}}$=1/2 character of
the spinorbit integrated states at the Fermi level. An effective
$j_{\mathrm{eff}}$spin Hamiltonian explains the observed weak ferromagnetism
and anisotropy of antiferromagnetically ordered magnetic state, which arise
naturally from the $j_{\mathrm{eff}}$=1/2 state with a rotation of IrO$_{6}$
octahedra. It is suggested that Sr$_{2}$IrO$_{4}$ is a unique class of
materials with effective exchange interactions in the spinorbital Hilbert
space.

We present an antiferromagnetically ordered ground state of
Na$_{2}$IrO$_{3}$ based on densityfunctionaltheory calculations including
both spinorbit coupling and onsite Coulomb interaction $U$. We show that the
splitting of $e_{g}'$ doublet states by the strong spinorbit coupling is
mainly responsible for the intriguing nature of its insulating gap and magnetic
ground state. Due to its proximity to the spinorbit insulator phase, the
magnetic ordering as obtained with finite $U$ is found to exhibit a strong
inplane anisotropy. The phase diagram of Na$_{2}$IrO$_{3}$ suggests a possible
interplay between spinorbit insulator and Mott antiferromagnetic insulator
phases.

We investigated electronic structure of 5d transitionmetal oxide Sr2IrO4
using angleresolved photoemission, optical conductivity, and xray absorption
measurements and firstprinciples band calculations. The system was found to be
well described by novel effective total angular momentum Jeff states, in which
relativistic spinorbit (SO) coupling is fully taken into account under a large
crystal field. Despite of delocalized Ir 5d states, the Jeffstates form so
narrow bands that even a small correlation energy leads to the Jeff = 1/2 Mott
ground state with unique electronic and magnetic behaviors, suggesting a new
class of the Jeff quantum spin driven correlatedelectron phenomena.