
We report the realization of novel symmetryprotected Dirac fermions in a
surfacedoped twodimensional (2D) semiconductor, black phosphorus. The widely
tunable band gap of black phosphorus by the surface Stark effect is employed to
achieve a surprisingly large band inversion up to ~0.6 eV. Highresolution
angleresolved photoemission spectra directly reveal the pair creation of Dirac
points and their moving along the axis of the glidemirror symmetry. Unlike
graphene, the Dirac point of black phosphorus is stable, as protected by
spacetime inversion symmetry, even in the presence of spinorbit coupling. Our
results establish black phosphorus in the inverted regime as a simple model
system of 2D symmetryprotected (topological) Dirac semimetals, offering an
unprecedented opportunity for the discovery of 2D Weyl semimetals.

We have explored a new mechanism for switching magnetism and
superconductivity in a magnetically frustrated ironbased superconductor using
spinpolarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single
crystal Sr$_2$VO$_3$FeAs shows that a spinpolarized tunneling current can
switch the Felayer magnetism into a nontrivial $C_4$ (2$\times$2) order, not
achievable by thermal excitation with unpolarized current. Our tunneling
spectroscopy study shows that the induced $C_4$ (2$\times$2) order has
characteristics of plaquette antiferromagnetic order in Fe layer and strongly
suppressed superconductivity. Also, thermal agitation beyond the bulk Fe spin
ordering temperature erases the $C_4$ state. These results suggest a new
possibility of switching local superconductivity by changing the symmetry of
magnetic order with spinpolarized and unpolarized tunneling currents in
ironbased superconductors.

Magnetic and electronic structures in LaFeAsO in the singlestripetype
antiferromagnetic (AFM) phase are studied using firstprinciples
densityfunctional calculations including the spinorbit interaction. We show
that the longitudinal ordering (LO) where Fe magnetic moments are parallel or
antiparallel with the inplane AFM ordering vector is lower in energy than
transverse orderings (TOs), in good agreement with neutron diffraction
experiments. Calculated energy difference between LO and TOs is about 0.1 meV
per Fe atom, indicating that LO will prevail at temperature below about 1 K. We
also show that the spinorbit interaction splits degenerate bands at some
highsymmetry points in the Brillouin zone by about 60 meV, depending on
spatial directions of the Fe magnetic moments.

Black phosphorus (BP), a layered van der Waals material, reportedly has a
band gap sensitive to external perturbations and manifests a Diracsemimetal
phase when its band gap is closed. Previous studies were focused on effects of
each perturbation, lacking a unified picture for the bandgap closing and the
Diracsemimetal phase. Here, using pseudospins from the glidereflection
symmetry, we study the electronic structures of mono and bilayer BP and
construct the phase diagram of the Diracsemimetal phase in the parameter space
related to pressure, strain, and electric field. We find that the
Diracsemimetal phase in BP layers is singly connected in the phase diagram,
indicating the phase is topologically identical regardless of the gapclosing
mechanism. Our findings can be generalized to the Dirac semimetal phase in
anisotropic layered materials and can play a guiding role in search for a new
class of topological materials and devices.

Thin flakes of black phosphorus (BP) are a twodimensional (2D) semiconductor
whose energy gap is predicted being sensitive to the number of layers and
external perturbations. Very recently, it was found that a simple method of
potassium (K) doping on the surface of BP closes its band gap completely,
producing a Dirac semimetal state with a linear band dispersion in the armchair
direction and a quadratic one in the zigzag direction. Here, based on
firstprinciples density functional calculations, we predict that, beyond the
critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac
cones) emerge in Kdoped fewlayer BP, with linear band dispersions in all
momentum directions, and the electronic states around Dirac points have chiral
pseudospins and Berry's phase. These features are robust with respect to the
spinorbit interaction and may lead to graphenelike electronic transport
properties with greater flexibility for potential device applications.

Black phosphorus consists of stacked layers of phosphorene, a twodimensional
semiconductor with promising device characteristics. We report the realization
of a widely tunable bandgap in fewlayer black phosphorus doped with potassium
using an insitu surface doping technique. Through bandstructure measurements
and calculations, we demonstrate that a vertical electric field from dopants
modulates the bandgap owing to the giant Stark effect and tunes the material
from a moderategap semiconductor to a bandinverted semimetal. At the critical
field of this band inversion, the material becomes a Dirac semimetal with
anisotropic dispersion, linear in armchair and quadratic in zigzag directions.
The tunable band structure of black phosphorus may allow great flexibility in
design and optimization of electronic and optoelectronic devices.

Cuttingedge research in the band engineering of nanowires at the ultimate
fine scale is related to the minimum scale of a nanowirebased device. The
fundamental issue at the subnanometre scale is whether angleresolved
photoemission spectroscopy (ARPES) can be used to directly measure the
momentumresolved electronic structure of a single wire because of the
difficulty associated with assembling single wire into an ordered array for
such measurements. Here, we demonstrated that the onedimensional (1D)
confinement of electrons, which are transferred from external dopants, within a
single subnanometrescale wire (subnanowire) could be directly measured using
ARPES. Convincing evidence of 1D electron confinement was obtained using two
different gold subnanowires with characteristic single metallic bands that were
alternately and spontaneously ordered on a stepped silicon template, Si(553).
Noble metal atoms were adsorbed at room temperature onto the gold subnanowires
while maintaining the overall structure of the wires. Only one type of gold
subnanowires could be controlled using external noble metal dopants without
transforming the metallic band of the other type of gold subnanowires. This
result was confirmed by scanning tunnelling microscopy experiments and
firstprinciples calculations. The selective control clearly showed that
externally doped electrons could be confined within a single gold subnanowire.
This experimental evidence was used to further investigate the effects of the
disorder induced by external dopants on a single subnanowire using ARPES.

We report on pWSe2/nMoS2 heterojunction diodes fabricated both on glass and
SiO2/p+Si substrates. The electrostatic performance and stability of our diode
were successfully improved toward ideal currentvoltage (IV) behavior by
adopting the fluoropolymer CYTOP encapsulation layer on top of our diode;
reduction of reversebias leakage current and enhancement of forwardbias on
current were achieved along with good aging stability in air ambient. Such
performance improvement is attributed to the intrinsic properties of CYTOP
materials with CF bonds whose strong dipole moment causes hole accumulation,
while the strong hydrophobicity of CYTOP would prevent ambient molecule
adsorption on 2D semiconductor surface. Moreover, fabricated on glass, our pn
diode displayed good dynamic rectification at over 100 Hz, without displacement
currentinduced signal overshoot/undershoot which was shown in the other diode
on SiO2/p+Si. Little IV hysteresis in our diode is another benefit of glass
substrate. We conclude that our CYTOPencapsulated WSe2/MoS2 pn diode on glass
is a high performance and ambient stable 2D nanodevice toward future advanced
electronics.

We investigate the edge state of a twodimensional topological insulator
based on the KaneMele model. Using complex wave numbers of the Bloch wave
function, we derive an analytical expression for the edge state localized near
the edge of a semiinfinite honeycomb lattice with a straight edge. For the
comparison of the edge type effects, two types of the edges are considered in
this calculation; one is a zigzag edge and the other is an armchair edge. The
complex wave numbers and the boundary condition give the analytic equations for
the energies and the wave functions of the edge states. The numerical solutions
of the equations reveal the intriguing spatial behaviors of the edge state. We
define an edgestate width for analyzing the spatial variation of the
edgestate wave function. Our results show that the edgestate width can be
easily controlled by a couple of parameters such as the spinorbit coupling and
the sublattice potential. The parameter dependences of the edgestate width
show substantial differences depending on the edge types. These demonstrate
that, even if the edge states are protected by the topological property of the
bulk, their detailed properties are still discriminated by their edges. This
edge dependence can be crucial in manufacturing smallsized devices since the
length scale of the edge state is highly subject to the edges.

Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D)
semiconductors, has recently been regarded as a promising material to break
through the limit of present semiconductors including graphene. However, its
potential in carrier mobility has still been depreciated since the fieldeffect
mobilities have only been measured from metalinsulatorsemiconductor field
effect transistors (MISFETs), where the transport behavior of conducting
carriers located at the insulator/MoS2 interface is unavoidably interfered by
the interface traps and gate voltage. Here, we for the first time report
MoS2based metal semiconductor fieldeffect transistors (MESFETs) with NiOx
Schottky electrode, where the maximum mobilities or carrier transport behavior
of the Schottky devices may hardly be interfered by onstate gate field. Our
MESFETs with single, double, and triplelayered MoS2 respectively demonstrate
high mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low threshold
voltage of 1 ~ 2 V. The thicknessdependent mobility difference in MESFETs
was theoretically explained with electron scattering reduction mechanisms.

We performed spinpolarized density functional calculations of
lanthanideseries (Ln) iron oxypnictides LnFeAsO (Ln=La, Ce, Pr, Nd, Sm, and
Gd) with constrained Fe magnetic moments, finding that inplane dxy and
outofplane dyz orbital characters are preferred for small Fe magnetic
moments. Comparison of LnFeAsO compounds shows that the antiferromagnetism
(AFM) from the Fe dxy orbital is itinerantly driven by orbitaldependent
Fermisurface nesting while AFM from the Fe dyz orbital is driven by
superexchange mechanism. The Fe magnetic moments of the two orbital characters
show different coupling strengths to Fermisurface electrons
orbitalselectively, suggesting that they may play different roles in
superconductivity and in AFM, and making d orbital characters of the magnetic
moment resolvable by measuring the electronic structures.

We study alpha, beta, and gamma graphyne, a class of graphene allotropes with
carbon triple bonds, using a firstprinciples densityfunctional method and
tightbinding calculation. We find that graphyne has versatile Dirac cones and
it is due to remarkable roles of the carbon triple bonds in electronic and
atomic structures. The carbon triple bonds modulate effective hopping matrix
elements and reverse their signs, resulting in Dirac cones with reversed
chirality in alpha graphyne, momentum shift of the Dirac point in beta
graphyne, and switch of the energy gap in gamma graphyne. Furthermore, the
triple bonds provide chemisorption sites of adatoms which can break sublattice
symmetry while preserving planar sp2bonding networks. These features of
graphyne open new possibilities for electronic applications of carbonbased
twodimensional materials and derived nanostructures.

Using selfenergycorrected density functional theory (DFT) and a coherent
scatteringstate approach, we explain currentvoltage (IV) measurements of four
pyridineAu and amineAu linked molecular junctions with quantitative accuracy.
Parameterfree manyelectron selfenergy corrections to DFT KohnSham
eigenvalues are demonstrated to lead to excellent agreement with experiments at
finite bias, improving upon orderofmagnitude errors in currents obtained with
standard DFT approaches. We further propose an approximate route for prediction
of quantitative IV characteristics for both symmetric and asymmetric molecular
junctions based on linear response theory and knowledge of the Stark shifts of
junction resonance energies. Our work demonstrates that a quantitative,
computationally inexpensive description of coherent transport in molecular
junctions is readily achievable, enabling new understanding and control of
charge transport properties of molecularscale interfaces at large bias
voltages.

We investigate the Rashbatype spin splitting in the Shockley surface states
on Au(111) and Ag(111) surfaces, based on firstprinciples calculations. By
turning on and off spinorbit interaction (SOI) partly, we show that although
the surface states are mainly of porbital character with only small dorbital
one, dchannel SOI determines the splitting and the spin direction while
pchannel SOI has minor and negative effects. The small dorbital character of
the surface states, present even without SOI, varies linearly with the crystal
momentum k, resulting in the linear k dependence of the splitting, the Hallmark
of the Rashba type. As a way to perturb the dorbital character of the surface
states, we discuss effects of electron and hole doping to the Au(111) surface.

Study of superconductivity in layered ironbased materials was initiated in
2006 by Hosono's group, and boosted in 2008 by the superconducting transition
temperature, Tc, of 26 K in LaFeAsO1xFx. Since then, enormous researches have
been done on the materials, with Tc reaching as high as 55 K. Here, we review
briefly experimental and theoretical results on atomic and electronic
structures and magnetic and superconducting properties of FeAsbased
superconductors and related compounds. We seek for clues for unconventional
superconductivity in the materials.

Locking of the spin of a quasiparticle to its momentum in split bands of on
the surfaces of metals and topological insulators (TIs) is understood in terms
of Rashba effect where a free electron in the surface states feels an effective
magnetic field. On the other hand, the orbital part of the angular momentum
(OAM) is usually neglected. We performed angle resolved photoemission
experiments with circularly polarized lights and first principles density
functional calculation with spinorbit coupling on a TI, Bi2Se3, to study the
local OAM of the surface states. We show from the results that OAM in the
surface states of Bi2Se3 is significant and locked to the electron momentum in
opposite direction to the spin, forming chiral OAM states. Our finding opens a
new possibility to have strong lightinduced spinpolarized current in the
surface states.

We performed angle resolved photoelectron spectroscopy (ARPES) studies on
mechanically detwinned BaFe2As2. We observe clear band dispersions and the
shapes and characters of the Fermi surfaces are identified. Shapes of the two
hole pockets around the {\Gamma}point are found to be consistent with the
Fermi surface topology predicted in the orbital ordered states. Diraccone like
band dispersions near the {\Gamma}point are clearly identified as
theoretically predicted. At the Xpoint, split bands remain intact in spite of
detwinning, barring twinning origin of the bands. The observed band dispersions
are compared with calculated band structures. With a magnetic moment of 0.2 ?B
per iron atom, there is a good agreement between the calculation and
experiment.

We report anisotropic Diraccone surface bands on a sidesurface geometry of
the topological insulator Bi$_2$Se$_3$ revealed by firstprinciples
densityfunctional calculations. We find that the electron velocity in the
sidesurface Dirac cone is anisotropically reduced from that in the
(111)surface Dirac cone, and the velocity is not in parallel with the wave
vector {\bf k} except for {\bf k} in highsymmetry directions. The size of the
electron spin depends on the direction of {\bf k} due to anisotropic variation
of the noncollinearity of the electron state. Lowenergy effective Hamiltonian
is proposed for sidesurface Dirac fermions, and its implications are presented
including refractive transport phenomena occurring at the edges of tological
insulators where different surfaces meet.

We study underdoped highTc superconductors YBa2Cu3O6.5 and YBa2Cu4O8 using
firstprinciples pseudopotential methods with additional Coulomb interactions
at the Cu atoms, and obtain Fermisurface pocket areas in close agreement with
measured Shubnikovde Haas and de Haasvan Alphen oscillations. With
antiferromagnetic order in CuO2 planes, stable in the calculations, small hole
pockets are formed near the socalled Fermiarc positions in the Brillouin zone
which reproduce the lowfrequency oscillations. A large electron pocket,
necessary for the negative Hall coefficient, is also formed in YBa2Cu3O6.5,
giving rise to the highfrequency oscillations as well. Effective masses and
specific heats are also calculated and compared with measurements. Our results
highlight the important role of magnetic order in the electronic structure of
underdoped highTc superconductors.

We present a minimal but crucial microscopic theory for epitaxial graphene
and graphene nanoribbons on the 4HSiC(0001) surface  protopypical materials
to explore physical properties of graphene in large scale. Coarsegrained model
Hamiltonians are constructed based on the atomic and electronic structures of
the systems from firstprinciples calculations. From the theory, we
unambiguously uncover origins of several intriguing experimental observations
such as brokensymmetry states around the Dirac points and new energy bands
arising throughout the Brillouin zone, thereby establishing the role of
substates in modifying electronic properties of graphene. We also predict that
armchair graphene nanoribbons on the surface have a single energy gap of 0.2 eV
when their widths are over 15 nm, in sharp contrast to their usual family
behavior.

Magnetic properties of iron chalcogenide superconducting materials are
investigated using density functional calculations. We find the stability of
magnetic phases is very sensitive to the height of chalcogen species from the
Fe plane: while FeTe with optimized Te height has the doublestripetype
$(\pi,0)$ magnetic ordering, the singlestripetype $(\pi,\pi)$ ordering
becomes the ground state phase when Te height is lowered below a critical value
by, e.g., Se doping. This behavior is understood by opposite Teheight
dependences of the superexchange interaction and a longerrange magnetic
interaction mediated by itinerant electrons. We also demonstrate a linear
temperature dependence of the macroscopic magnetic susceptibility in the
singlestripe phase in contrast to a constant behavior in the doublestripe
phase. Our findings provide a comprehensive and unified view to understand the
magnetism in FeSe$_x$Te$_{1x}$ and iron pnictide superconductors.

Superconducting properties of hypothetical simple hexagonal CaB2 are studied
using the fully anisotropic Eliashberg formalism based on electronic and
phononic structures and electronphonon interactions which are obtained from ab
initio pseudopotential density functional calculations. The superconducting
transition temperature Tc, the superconducting energy gap Delta(k) on the Fermi
surface, and the specific heat are obtained and compared with corresponding
properties of MgB2. Our results suggest that CaB2 will have a higher Tc and a
stronger twogap nature, with a larger Delta(k) in the sigma bands but a
smaller Delta(k) in the pi bands than MgB2.

We obtained the spectral function of the graphite H point using high
resolution angle resolved photoelectron spectroscopy (ARPES). The extracted
width of the spectral function (inverse of the photohole lifetime) near the H
point is approximately proportional to the energy as expected from the linearly
increasing density of states (DOS) near the Fermi energy. This is well
accounted by our electronphonon coupling theory considering the peculiar
electronic DOS near the Fermi level. And we also investigated the temperature
dependence of the peak widths both experimentally and theoretically. The upper
bound for the electronphonon coupling parameter is ~0.23, nearly the same
value as previously reported at the K point. Our analysis of temperature
dependent ARPES data at K shows that the energy of phonon mode of graphite has
much higher energy scale than 125K which is dominant in electronphonon
coupling.

The magnetic properties of various iron pnictides are investigated using
firstprinciples pseudopotential calculations. We consider three different
families, LaFePnO, BaFe$_2$Pn$_2$, and LiFePn with Pn=As and Sb, and find that
the Fe local spin moment and the stability of the stripetype antiferromagnetic
phase increases from As to Sb for all of the three families, with a partial gap
formed at the Fermi energy. In the meanwhile, the Fermisurface nesting is
found to be enhanced from Pn=As to Sb for LaFePnO, but not for BaFe$_2$Pn$_2$
and LiFePn. These results indicate that it is not the Fermi surface nesting but
the local moment interaction that determines the stability of the magnetic
phase in these materials, and that the partial gap is an induced feature by a
specific magnetic order.

Molecularscale components are expected to be central to nanoscale electronic
devices. While molecularscale switching has been reported in atomic quantum
point contacts, singlemolecule junctions provide the additional flexibility of
tuning the on/off conductance states through molecular design. Thus far,
switching in singlemolecule junctions has been attributed to changes in the
conformation or charge state of the molecule. Here, we demonstrate reversible
binary switching in a singlemolecule junction by mechanical control of the
metalmolecule contact geometry. We show that 4,4'bipyridinegold
singlemolecule junctions can be reversibly switched between two conductance
states through repeated junction elongation and compression. Using
firstprinciples calculations, we attribute the different measured conductance
states to distinct contact geometries at the flexible but stable NAu bond:
conductance is low when the NAu bond is perpendicular to the conducting
pisystem, and high otherwise. This switching mechanism, inherent to the
pyridinegold link, could form the basis of a new class of
mechanicallyactivated singlemolecule switches.