• Intense, single-cycle terahertz (THz) pulses offer a promising approach for understanding and controlling the properties of a material on an ultrafast time scale. In particular, resonantly exciting phonons leads to a better understanding of how they couple to other degrees of freedom in the material (e.g., ferroelectricity, conductivity and magnetism) while enabling coherent control of lattice vibrations and the symmetry changes associated with them. However, an ultrafast method for observing the resulting structural changes at the atomic scale is essential for studying phonon dynamics. A simple approach for doing this is optical second harmonic generation (SHG), a technique with remarkable sensitivity to crystalline symmetry in the bulk of a material as well as at surfaces and interfaces. This makes SHG an ideal method for probing phonon dynamics in topological insulators (TI), materials with unique surface transport properties. Here, we resonantly excite a polar phonon mode in the canonical TI Bi$_2$Se$_3$ with intense THz pulses and probe the subsequent response with SHG. This enables us to separate the photoinduced lattice dynamics at the surface from transient inversion symmetry breaking in the bulk. Furthermore, we coherently control the phonon oscillations by varying the time delay between a pair of driving THz pulses. Our work thus demonstrates a versatile, table-top tool for probing and controlling ultrafast phonon dynamics in materials, particularly at surfaces and interfaces, such as that between a TI and a magnetic material, where exotic new states of matter are predicted to exist.
  • We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $\mu \sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique was developed to make Ohmic contact to the buried 2DEG without destroying the magnetic properties of our crystal.
  • We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $\delta$-doping. The interaction between the magnetic dopants (Mn) and the Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when the temperature is below the Curie temperature ($T_{C} \sim 1.7K$) and the 2DEG is brought in close proximity to the Mn layer by gating. The Anomalous Hall Effect (AHE) contribution to the total Hall resistance is shown to be about three to four orders of magnitude smaller than in the case of hole-mediated ferromagnetism indicating the presence of small spin-orbit interaction.
  • We show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state - ground state relaxation is important for all dots in ensemble, while phonon - assisted processes are dominant for the dots with smaller lateral size.
  • We study the excitonic structure of CdSe/ZnSe self assembled quantum dots (SAQD) by magneto-photoluminescence (PL) spectroscopy. Using fixed 200 nm apertures through a metal film, we are able to probe single narrow (200 micro-eV) spectroscopic lines emitted from CdSe quantum dots at 2K. Using linear polarization analysis of these lines, we find that approximately half of the quantum dots are elliptically elongated along the [110] direction. The other half of the QDs are symmetric, with emission lines which are completely unpolarized at zero field and exhibit no doublet structure. Using an applied magnetic field, we obtain the diamagnetic shift and the g-factor for several symmetric dots and find that the variation from dot to dot is random, with no systematic dependence with emission energy. In addition, we find no correlation between the diamagnetic shift and the g-factor.