Using a drone as an aerial base station (ABS) to provide coverage to users on the ground is envisaged as a promising solution for beyond fifth generation (beyond-5G) wireless networks. While the literature to date has examined downlink cellular networks with ABSs, we consider an uplink cellular network with an ABS. Specifically, we analyze the use of an underlay ABS to provide coverage for a temporary event, such as a sporting event or a concert in a stadium. Using stochastic geometry, we derive the analytical expressions for the uplink coverage probability of the terrestrial base station (TBS) and the ABS. The results are expressed in terms of (i) the Laplace transforms of the interference power distribution at the TBS and the ABS and (ii) the distance distribution between the ABS and an independently and uniformly distributed (i.u.d.) ABS-supported user equipment and between the ABS and an i.u.d. TBS-supported user equipment. The accuracy of the analytical results is verified by Monte Carlo simulations. Our results show that varying the ABS height leads to a trade-off between the uplink coverage probability of the TBS and the ABS. In addition, assuming a quality of service of 90% at the TBS, an uplink coverage probability of the ABS of over 85% can be achieved, with the ABS deployed at or below its optimal height of typically between 250-500 m for the considered setup.

Here we report the observation of pressure-induced melting of antiferromagnetic (AFM) order and emergence of a new quantum state in the honeycomb-lattice halide alpha-RuCl3, a candidate compound in the proximity of quantum spin liquid state. Our high-pressure heat capacity measurements demonstrate that the AFM order smoothly melts away at a critical pressure (Pc) of 0.7 GPa. Intriguingly, the AFM transition temperature displays an increase upon applying pressure below the Pc, in stark contrast to usual phase diagrams, for example in pressurized parent compounds of unconventional superconductors. Furthermore, in the high-pressure phase an unusual steady of magnetoresistance is observed. These observations suggest that the high-pressure phase is in an exotic gapped quantum state which is robust against pressure up to ~140 GPa.

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. Here, we study the formation of conductive filaments in a material medium with sub-nanometer thickness, formed through the oxidation of atomically-thin two-dimensional boron nitride. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, we observe current switching characteristics that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultra-low energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultra-low power operation.

We report the observation of extraordinarily robust zero-resistance superconductivity in the pressurized (TaNb)0.67(HfZrTi)0.33 high entropy alloy - a new kind of material with a body-centered cubic crystal structure made from five randomly distributed transition metal elements. The transition to superconductivity (TC) increases from an initial temperature of 7.7 K at ambient pressure to 10 K at ~ 60 GPa, and then slowly decreases to 9 K by 190.6 GPa, a pressure that falls within that of the outer core of the earth. We infer that the continuous existence of the zero-resistance superconductivity from one atmosphere up to such a high pressure requires a special combination of electronic and mechanical characteristics. This high entropy alloy superconductor thus may have a bright future for applications under extreme conditions, and also poses a challenge for understanding the underlying quantum physics.

Deployment of low cost power beacons (PBs) is a promising solution for dedicated wireless power transfer (WPT) in future wireless networks. In this paper, we present a tractable model for PB-assisted millimeter wave (mmWave) wireless ad hoc networks, where each transmitter (TX) harvests energy from all PBs and then uses the harvested energy to transmit information to its desired receiver. Our model accounts for realistic aspects of WPT and mmWave transmissions, such as power circuit activation threshold, allowed maximum harvested power, maximum transmit power, beamforming and blockage. Using stochastic geometry, we obtain the Laplace transform of the aggregate received power at the TX to calculate the power coverage probability. We approximate and discretize the transmit power of each TX into a finite number of discrete power levels in log scale to compute the channel and total coverage probability. We compare our analytical predictions to simulations and observe good accuracy. The proposed model allows insights into effect of system parameters, such as transmit power of PBs, PB density, main lobe beam-width and power circuit activation threshold on the overall coverage probability. The results confirm that it is feasible and safe to power TXs in a mmWave ad hoc network using PBs.

We report the discovery of superconductivity in pressurized CeRhGe3, until now the only remaining non-superconducting member of the isostructural family of non-centrosymmetric heavy-fermion compounds CeTX3 (T = Co, Rh, Ir and X = Si, Ge). Superconductivity appears in CeRhGe3 at a pressure of 19.6 GPa and the transition temperature Tc reaches a maximum value of 1.3 K at 21.5 GPa. This finding provides an opportunity to establish systematic correlations between superconductivity and materials properties within this family. Though ambient-pressure unit-cell volumes and critical pressures for superconductivity vary substantially across the series, all family members reach a maximum Tcmax at a common critical cell volume Vcrit, and Tcmax at Vcrit increases with increasing spin-orbit coupling strength of the d-electrons. These correlations show that substantial Kondo hybridization and spin-orbit coupling favor superconductivity in this family, the latter reflecting the role of broken centro-symmetry.

In layered transition metal dichalcogenides (LTMDCs) that display both charge density waves (CDWs) and superconductivity, the superconducting state generally emerges directly on suppression of the CDW state. Here, however, we report a different observation for pressurized TaTe2, a non-superconducting CDW-bearing LTMDC at ambient pressure. We find that a superconducting state does not occur in TaTe2 after the full suppression of its CDW state, which we observe at about 3 GPa, but, rather, a non-superconducting semimetal state is observed. At a higher pressure, ~21 GPa, where both the semimetal state and the corresponding positive magnetoresistance effect are destroyed, superconductivity finally emerges and remains present up to ~50 GPa, the high pressure limit of our measurements. Our pressure-temperature phase diagram for TaTe2 demonstrates that the CDW and the superconducting phases in TaTe2 do not directly transform one to the other, but rather are separated by a semimetal state, - the first experimental case where the CDW and superconducting states are separated by an intermediate phase in LTMDC systems.

To enable massive machine type communication (mMTC), data aggregation is a promising approach to reduce the congestion caused by a massive number of machine type devices (MTDs). In this work, we consider a two-phase cellular-based mMTC network where MTDs transmit to aggregators (i.e., aggregation phase) and the aggregated data is then relayed to base stations (i.e., relaying phase). Due to the limited resources, the aggregators not only aggregate data, but also schedule resources among MTDs. We consider two scheduling schemes: random resource scheduling (RRS) and channel-aware resource scheduling (CRS). By leveraging the stochastic geometry, we present a tractable analytical framework to investigate the signal-to-interference ratio (SIR) for each phase, thereby computing the MTD success probability, the average number of successful MTDs and probability of successful channel utilization, which are the key metrics characterizing the overall mMTC performance. Our numerical results show that, although the CRS outperforms the RRS in terms of SIR at the aggregation phase, the simpler RRS has almost the same performance as the CRS for most cases with regards to the overall mMTC performance. Furthermore, the provision of more resources at the aggregation phase is not always beneficial to the mMTC performance.

Scanning probe microscopy (SPM) has been extensively applied to probe interfacial water in many interdisciplinary fields but the disturbance of the probes on the hydrogen-bonding structure of water has remained an intractable problem. Here we report submolecular-resolution imaging of the water clusters on a NaCl(001) surface within the nearly non-invasive region by a qPlus-based noncontact atomic force microscopy. Comparison with theoretical simulations reveals that the key lies in probing the weak high-order electrostatic force between the quadrupole-like CO-terminated tip and the polar water molecules at large tip-water distances. This interaction allows the imaging and structural determination of the weakly bonded water clusters and even of their metastable states without inducing any disturbance. This work may open up new possibility of studying the intrinsic structure and electrostatics of ice or water on bulk insulating surfaces, ion hydration and biological water with atomic precision.

We report high pressure studies of the structural stability of Ru2Sn3, a new type of three dimensional topological insulator (3D-TI) with unique quasi-one dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal to orthorhombic shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of ~ 20 GPa. This is in contrast to the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room-temperature topological insulating state in Ru2Sn3.

One of the most strikingly universal features of the high temperature superconductors is that the superconducting phase emerges in the close proximity of the antiferromagnetic phase, and the interplay between these two phases poses a long standing challenge. It is commonly believed that,as the antiferromagnetic transition temperature is continuously suppressed to zero, there appears a quantum critical point, around which the existence of antiferromagnetic fluctuation is responsible for the development of the superconductivity. In contrast to this scenario, we report the discovery of a bi-critical point identified at 2.88 GPa and 26.02 K in the pressurized high quality single crystal Ca0.73La0.27FeAs2 by complementary in situ high pressure measurements. At the critical pressure, we find that the antiferromagnetism suddenly disappears and superconductivity simultaneously emerges at almost the same temperature, and that the external magnetic field suppresses the superconducting transition temperature but hardly affects the antiferromagnetic transition temperature.

The influence of carrier type on superconductivity has been an important issue for understanding both conventional and unconventional superconductors [1-7]. For elements that superconduct, it is known that hole-carriers govern the superconductivity for transition and main group metals [8-10]. The role of hole-carriers in elements that are not normally conducting but can be converted to superconductors, however, remains unclear due to the lack of experimental data. Here we report the first in-situ high pressure Hall effect measurements on single crystal black phosphorus, measured up to ~ 50 GPa, and find a correlation between the Hall coefficient and the superconducting transition temperature (TC). Our results reveal that hole-carriers play a vital role in developing superconductivity and enhancing TC. Importantly, we also find a Lifshitz transition in the high-pressure cubic phase at ~17.2GPa, which uncovers the origin of a puzzling valley in the superconducting TC-pressure phase diagram. These results offer insight into the role of hole-carriers in developing superconductivity in simple semiconducting solids under pressure.

Non-centrosymmetric superconductors, whose crystal structure is absent of inversion symmetry, have recently received special attentions due to the expectation of unconventional pairings and exotic physics associated with such pairings. The newly discovered superconductors A2Cr3As3 (A=K, Rb), featured by the quasi-one dimensional structure with conducting CrAs chains, belongs to such kind of superconductor. In this study, we are the first to report the finding that the superconductivity of A2Cr3As3 (A=K, Rb) has a positive correlation with the extent of non-centrosymmetry. Our in-situ high pressure ac susceptibility and synchrotron x-ray diffraction measurements reveal that the larger bond angle of As-Cr-As in the CrAs chains can be taken as a key factor controlling superconductivity. While the smaller bond angle and the distance between the CrAs chains also affect the superconductivity due to their structural connections with the angle. We find that the larger value of the difference between the larger and samller angles, which is associated with the extent of the non-centrosymmetry of the lattice structure, is in favor of superconductivity. These results are expected to shed a new light on the underlying mechanism of the superconductivity in these Q1D superconductors and also to provide new perspective in understanding other non-centrosymmetric superconductors.

Underlay in-band device-to-device (D2D) communication can improve the spectrum efficiency of cellular networks. However, the coexistence of D2D and cellular users causes inter-cell and intra-cell interference. The former can be effectively managed through inter-cell interference coordination and, therefore, is not considered in this work. Instead, we focus on the intra-cell interference and propose a D2D mode selection scheme to manage it inside a finite cellular network region. The potential D2D users are controlled by the base station (BS) to operate in D2D mode based on the average interference generated to the BS. Using stochastic geometry, we study the outage probability experienced at the BS and a D2D receiver, and spectrum reuse ratio, which quantifies the average fraction of successfully transmitting D2D users. The analysis shows that the outage probability at the D2D receiver varies for different locations. Additionally, without impairing the performance at the BS, if the path-loss exponent on the cellular link is slightly lower than that on the D2D link, the spectrum reuse ratio can have negligible decrease while the D2D users' average number of successful transmissions increases with increasing D2D node density. This indicates that an increasing level of D2D communication can be beneficial in future networks..

SmB6 is a promising candidate material that promises to elucidate the connection between strong correlations and topological electronic states, which is a major challenge in condensed matter physics. The electron correlations are responsible for the development of multiple gaps in SmB6, whose elucidation is sorely needed. Here we do so by studying the evolutions of the gaps and other corresponding behaviors under pressure. Our measurements of the valence, Hall effect and electrical resistivity clearly identify the gap which is associated with the bulk Kondo hybridization and, moreover, uncover a pressure-induced quantum phase transition from the putative topological Kondo insulating state to a Fermi-liquid state at ~4 GPa. We provide the evidences for the transition by a jump of inverse Hall coefficient, a diverging tendency of the electron-electron scattering coefficient and, thereby, a destruction of the Kondo entanglement in the ground state. These effects take place in a mixed-valence background. Our results raise the new prospect for studying topological electronic states in quantum critical materials settings.

In-situ hydrostatic and uniaxial high pressure studies were performed on recently discovered CrAs-based qausi-one-dimensional superconductors A2Cr3As3 (A=K and Rb). The established Pressure-Temperature phase diagram in this study clearly demonstrates that either hydrostatic pressure or uniaxial pressure globally suppresses the superconducting transition temperature (Tc), and the latter is more effective than the former. Interestingly, in the same hydrostatic pressure environment, the suppressing rate of Tc in Rb2Cr3As3 is nearly twice as that of K2Cr3As3. Significantly, the reduced Tc in these superconductors can fully recover to its ambient-pressure value after the applied pressure is entirely released. Our results suggest that the bonding distance and angle between Cr-Cr in the Cr3As3 chains are the key factor in determining Tc and that the optimal lattice for superconductivity is hosted in the pristine K2Cr3As3.

We report comprehensive high pressure studies on correlation between intercalated magnetic layers and superconductivity in EuFe2(As0.81P0.19)2 single crystal through in-situ high pressure resistance, specific heat, X-ray diffraction and X-ray absorption measurements. We find that an unconfirmed magnetic order of the intercalated layers coexists with superconductivity in a narrow pressure range 0-0.5GPa, and then it converts to a ferromagnetic (FM) order at pressure above 0.5 GPa, where its superconductivity is absent. The obtained temperature-pressure phase diagram clearly demonstrates that the unconfirmed magnetic order can emerge from the superconducting state. In stark contrast, the superconductivity cannot develop from the FM state that is evolved from the unconfirmed magnetic state. High pressure X-ray absorption (XAS) measurements reveal that the pressure-induced enhancement of Eu's mean valence plays an important role in suppressing the superconductivity and tuning the transition from the unconfirmed magnetic state to a FM state. The unusual interplay among valence state of Eu ions, magnetism and superconductivity under pressure may shed new light on understanding the role of the intercalated magnetic layers in Fe-based superconductors.

Topological insulators (TIs) containing 4f electrons have recently attracted intensive interests due to the possible interplay of their non-trivial topological properties and strong electronic correlations. YbB6 and SmB6 are the prototypical systems with such unusual properties, which may be tuned by external pressure to give rise to new emergent phenomena. Here, we report the first observation, through in-situ high pressure resistance, Hall, X-ray diffraction and X-ray absorption measurements, of two pressure-induced quantum phase transitions (QPTs) in YbB6. Our data revealthat the two insulating phases are separated by a metallic phase due to the pressure-driven valence change of Yb f-orbitals. In combination with previous studies, our results suggest that the two insulating states may be topologically different in nature and originate from the d-p and d-f hybridization, respectively. The tunable topological properties of YbB6 revealed in this study may shed light on the intriguing correlation between the topology and the 4f electrons from the perspective of pressure dependent studies.

We report the first observation of a pressure-induced breakdown of the 3D-DSM state in Cd3As2, evidenced by a series of in-situ high-pressure synchrotron X-ray diffraction (XRD) and single crystal transport measurements. We find that Cd3As2 undergoes a structural phase transition from a metallic tetragonal (T) phase in space group I41/acd to a semiconducting monoclinic (M) phase in space group P21/c at critical pressure 2.57 GPa, above this pressure, an activation energy gap appears, accompanied by distinct switches in Hall resistivity slope and electron mobility. These changes of crystal symmetry and corresponding transport properties manifest the breakdown of the 3D-DSM state in pressurized Cd3As2.

The recent discovery of large and non-saturating magnetoresistance (LMR) in WTe2 provides a unique playground to find new phenomena and significant perspective for potential applications. Here we report the first observation of superconductivity near the proximity of suppressed LMR state in pressurized WTe2 through high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance, and ac magnetic susceptibility measurements. It is found that the positive magnetoresistance effect can be turned off at a critical pressure of 10.5 GPa without crystal structure change and superconductivity emerges simultaneously. The maximum superconducting transition temperature can be reached to 6.5 K at ~15 GPa and it decreases down to 2.6 K at ~25 GPa. In-situ high pressure Hall coefficient measurements at 10 K demonstrate that elevating pressure decreases hole carrier's population but increases electron carrier's population. Significantly, at the critical pressure, we observed a sign change in the Hall coefficient, indicating a possible Lifshitz-type quantum phase transition in WTe2.

This paper analyzes the performance of the primary and secondary users (SUs) in an arbitrarily-shaped underlay cognitive network. In order to meet the interference threshold requirement for a primary receiver (PU-Rx) at an arbitrary location, we consider different SU activity protocols which limit the number of active SUs. We propose a framework, based on the moment generating function (MGF) of the interference due to a random SU, to analytically compute the outage probability in the primary network, as well as the average number of active SUs in the secondary network. We also propose a cooperation-based SU activity protocol in the underlay cognitive network which includes the existing threshold-based protocol as a special case. We study the average number of active SUs for the different SU activity protocols, subject to a given outage probability constraint at the PU and we employ it as an analytical approach to compare the effect of different SU activity protocols on the performance of the primary and secondary networks.

A unique platform for investigating the correlation between the antiferromagnetic (AFM) and superconducting (SC) states in high temperature superconductors is created by the discovery of alkaline iron selenide superconductors which are composed of an AFM insulating phase and a SC phase separated spatially. Our previous studies showed that pressure can fully suppress the superconductivity of ambient-pressure superconducting phase (SC-I) and AFM order simultaneously, then induce another superconducting phase (SC-II) at higher pressure. Consequently, the connection between the two superconducting phases becomes an intriguing issue. In this study, on the basis of observing pressure-induced reemergence of superconductivity in Rb0.8Fe2-ySe2-xTex (x=0, 0.19 and 0.28) superconductors, we find that the superconductivity of the SC-I and SC-II phases as well as the AFM ordered state can be synchronously tuned by Te doping and disappear together at the doping level of x=0.4. We propose that the two superconducting phases are connected by the AFM phase, in other words, the state of long-ranged AFM order plays a role in giving rise to superconductivity of the SC-I phase, while the fluctuation state of the suppressed AFM phase drives the emergence of SC-II phase. These results comprehensively demonstrate the versatile roles of AFM states in stabilizing and developing superconductivity in the alkaline iron selenide superconductors.

Schottky barrier field-effect transistors (SBFETs) based on few and mono layer phosphorene are simulated by the non-equilibrium Green's function formalism. It is shown that scaling down the gate oxide thickness results in pronounced ambipolar I-V characteristics and significant increase of the minimal leakage current. The problem of leakage is especially severe when the gate insulator is thin and the number of layer is large, but can be effectively suppressed by reducing phosphorene to mono or bilayer. Different from two-dimensional graphene and layered dichalcogenide materials, both the ON-current of the phosphorene SBFETs and the metal-semiconductor contact resistance between metal and phosphorene strongly depend on the transport crystalline direction.

A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The transistor shows excellent saturation of output I-V characteristics due to drain-induced depletion and lack of tunneling barrier layers. The subthreshold slope could be below the thermionic limit due to band filtering as the switching mechanism. The atomically thin vertical PN heterojunction can be electrostatically modulated from a type II heterojunction to a broken bandgap alignment, which is preferred for maximizing the on-current.

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction. The effective masses are lower in the "armchair" direction which provides higher drive current at the same biasing. The degree of anisotropy is higher for the holes, which improves the performance of p-type devices. The intrinsic delay of 20 nm BP FETs is in the range of 50 fs at ON-/OFF-current ratio of 4 orders. Monolayer BP FETs outperform both MoS$_2$ and Si FETs for both n- and p-type devices in terms of ballistic performance limits, due to highly anisotropic band structure.