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Using a drone as an aerial base station (ABS) to provide coverage to users on
the ground is envisaged as a promising solution for beyond fifth generation
(beyond-5G) wireless networks. While the literature to date has examined
downlink cellular networks with ABSs, we consider an uplink cellular network
with an ABS. Specifically, we analyze the use of an underlay ABS to provide
coverage for a temporary event, such as a sporting event or a concert in a
stadium. Using stochastic geometry, we derive the analytical expressions for
the uplink coverage probability of the terrestrial base station (TBS) and the
ABS. The results are expressed in terms of (i) the Laplace transforms of the
interference power distribution at the TBS and the ABS and (ii) the distance
distribution between the ABS and an independently and uniformly distributed
(i.u.d.) ABS-supported user equipment and between the ABS and an i.u.d.
TBS-supported user equipment. The accuracy of the analytical results is
verified by Monte Carlo simulations. Our results show that varying the ABS
height leads to a trade-off between the uplink coverage probability of the TBS
and the ABS. In addition, assuming a quality of service of 90% at the TBS, an
uplink coverage probability of the ABS of over 85% can be achieved, with the
ABS deployed at or below its optimal height of typically between 250-500 m for
the considered setup.
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Here we report the observation of pressure-induced melting of
antiferromagnetic (AFM) order and emergence of a new quantum state in the
honeycomb-lattice halide alpha-RuCl3, a candidate compound in the proximity of
quantum spin liquid state. Our high-pressure heat capacity measurements
demonstrate that the AFM order smoothly melts away at a critical pressure (Pc)
of 0.7 GPa. Intriguingly, the AFM transition temperature displays an increase
upon applying pressure below the Pc, in stark contrast to usual phase diagrams,
for example in pressurized parent compounds of unconventional superconductors.
Furthermore, in the high-pressure phase an unusual steady of magnetoresistance
is observed. These observations suggest that the high-pressure phase is in an
exotic gapped quantum state which is robust against pressure up to ~140 GPa.
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The morphology and dimension of the conductive filament formed in a
memristive device are strongly influenced by the thickness of its switching
medium layer. Aggressive scaling of this active layer thickness is critical
towards reducing the operating current, voltage and energy consumption in
filamentary type memristors. Previously, the thickness of this filament layer
has been limited to above a few nanometers due to processing constraints,
making it challenging to further suppress the on-state current and the
switching voltage. Here, we study the formation of conductive filaments in a
material medium with sub-nanometer thickness, formed through the oxidation of
atomically-thin two-dimensional boron nitride. The resulting memristive device
exhibits sub-nanometer filamentary switching with sub-pA operation current and
femtojoule per bit energy consumption. Furthermore, by confining the filament
to the atomic scale, we observe current switching characteristics that are
distinct from that in thicker medium due to the profoundly different atomic
kinetics. The filament morphology in such an aggressively scaled memristive
device is also theoretically explored. These ultra-low energy devices are
promising for realizing femtojoule and sub-femtojoule electronic computation,
which can be attractive for applications in a wide range of electronics systems
that desire ultra-low power operation.
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We report the observation of extraordinarily robust zero-resistance
superconductivity in the pressurized (TaNb)0.67(HfZrTi)0.33 high entropy alloy
- a new kind of material with a body-centered cubic crystal structure made from
five randomly distributed transition metal elements. The transition to
superconductivity (TC) increases from an initial temperature of 7.7 K at
ambient pressure to 10 K at ~ 60 GPa, and then slowly decreases to 9 K by 190.6
GPa, a pressure that falls within that of the outer core of the earth. We infer
that the continuous existence of the zero-resistance superconductivity from one
atmosphere up to such a high pressure requires a special combination of
electronic and mechanical characteristics. This high entropy alloy
superconductor thus may have a bright future for applications under extreme
conditions, and also poses a challenge for understanding the underlying quantum
physics.
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Deployment of low cost power beacons (PBs) is a promising solution for
dedicated wireless power transfer (WPT) in future wireless networks. In this
paper, we present a tractable model for PB-assisted millimeter wave (mmWave)
wireless ad hoc networks, where each transmitter (TX) harvests energy from all
PBs and then uses the harvested energy to transmit information to its desired
receiver. Our model accounts for realistic aspects of WPT and mmWave
transmissions, such as power circuit activation threshold, allowed maximum
harvested power, maximum transmit power, beamforming and blockage. Using
stochastic geometry, we obtain the Laplace transform of the aggregate received
power at the TX to calculate the power coverage probability. We approximate and
discretize the transmit power of each TX into a finite number of discrete power
levels in log scale to compute the channel and total coverage probability. We
compare our analytical predictions to simulations and observe good accuracy.
The proposed model allows insights into effect of system parameters, such as
transmit power of PBs, PB density, main lobe beam-width and power circuit
activation threshold on the overall coverage probability. The results confirm
that it is feasible and safe to power TXs in a mmWave ad hoc network using PBs.
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We report the discovery of superconductivity in pressurized CeRhGe3, until
now the only remaining non-superconducting member of the isostructural family
of non-centrosymmetric heavy-fermion compounds CeTX3 (T = Co, Rh, Ir and X =
Si, Ge). Superconductivity appears in CeRhGe3 at a pressure of 19.6 GPa and the
transition temperature Tc reaches a maximum value of 1.3 K at 21.5 GPa. This
finding provides an opportunity to establish systematic correlations between
superconductivity and materials properties within this family. Though
ambient-pressure unit-cell volumes and critical pressures for superconductivity
vary substantially across the series, all family members reach a maximum Tcmax
at a common critical cell volume Vcrit, and Tcmax at Vcrit increases with
increasing spin-orbit coupling strength of the d-electrons. These correlations
show that substantial Kondo hybridization and spin-orbit coupling favor
superconductivity in this family, the latter reflecting the role of broken
centro-symmetry.
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In layered transition metal dichalcogenides (LTMDCs) that display both charge
density waves (CDWs) and superconductivity, the superconducting state generally
emerges directly on suppression of the CDW state. Here, however, we report a
different observation for pressurized TaTe2, a non-superconducting CDW-bearing
LTMDC at ambient pressure. We find that a superconducting state does not occur
in TaTe2 after the full suppression of its CDW state, which we observe at about
3 GPa, but, rather, a non-superconducting semimetal state is observed. At a
higher pressure, ~21 GPa, where both the semimetal state and the corresponding
positive magnetoresistance effect are destroyed, superconductivity finally
emerges and remains present up to ~50 GPa, the high pressure limit of our
measurements. Our pressure-temperature phase diagram for TaTe2 demonstrates
that the CDW and the superconducting phases in TaTe2 do not directly transform
one to the other, but rather are separated by a semimetal state, - the first
experimental case where the CDW and superconducting states are separated by an
intermediate phase in LTMDC systems.
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To enable massive machine type communication (mMTC), data aggregation is a
promising approach to reduce the congestion caused by a massive number of
machine type devices (MTDs). In this work, we consider a two-phase
cellular-based mMTC network where MTDs transmit to aggregators (i.e.,
aggregation phase) and the aggregated data is then relayed to base stations
(i.e., relaying phase). Due to the limited resources, the aggregators not only
aggregate data, but also schedule resources among MTDs. We consider two
scheduling schemes: random resource scheduling (RRS) and channel-aware resource
scheduling (CRS). By leveraging the stochastic geometry, we present a tractable
analytical framework to investigate the signal-to-interference ratio (SIR) for
each phase, thereby computing the MTD success probability, the average number
of successful MTDs and probability of successful channel utilization, which are
the key metrics characterizing the overall mMTC performance. Our numerical
results show that, although the CRS outperforms the RRS in terms of SIR at the
aggregation phase, the simpler RRS has almost the same performance as the CRS
for most cases with regards to the overall mMTC performance. Furthermore, the
provision of more resources at the aggregation phase is not always beneficial
to the mMTC performance.
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Scanning probe microscopy (SPM) has been extensively applied to probe
interfacial water in many interdisciplinary fields but the disturbance of the
probes on the hydrogen-bonding structure of water has remained an intractable
problem. Here we report submolecular-resolution imaging of the water clusters
on a NaCl(001) surface within the nearly non-invasive region by a qPlus-based
noncontact atomic force microscopy. Comparison with theoretical simulations
reveals that the key lies in probing the weak high-order electrostatic force
between the quadrupole-like CO-terminated tip and the polar water molecules at
large tip-water distances. This interaction allows the imaging and structural
determination of the weakly bonded water clusters and even of their metastable
states without inducing any disturbance. This work may open up new possibility
of studying the intrinsic structure and electrostatics of ice or water on bulk
insulating surfaces, ion hydration and biological water with atomic precision.
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We report high pressure studies of the structural stability of Ru2Sn3, a new
type of three dimensional topological insulator (3D-TI) with unique quasi-one
dimensional Dirac electron states throughout the surface Brillouin zone of its
one-atmosphere low temperature orthorhombic form. Our in-situ high-pressure
synchrotron x-ray diffraction and electrical resistance measurements reveal
that upon increasing pressure the tetragonal to orthorhombic shifts to higher
temperature. We find that the stability of the orthorhombic phase that hosts
the non-trivial topological ground state can be pushed up to room temperature
by an applied pressure of ~ 20 GPa. This is in contrast to the commonly known
3D-TIs whose ground state is usually destroyed under pressure. Our results
indicate that pressure provides a possible pathway for realizing a
room-temperature topological insulating state in Ru2Sn3.
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One of the most strikingly universal features of the high temperature
superconductors is that the superconducting phase emerges in the close
proximity of the antiferromagnetic phase, and the interplay between these two
phases poses a long standing challenge. It is commonly believed that,as the
antiferromagnetic transition temperature is continuously suppressed to zero,
there appears a quantum critical point, around which the existence of
antiferromagnetic fluctuation is responsible for the development of the
superconductivity. In contrast to this scenario, we report the discovery of a
bi-critical point identified at 2.88 GPa and 26.02 K in the pressurized high
quality single crystal Ca0.73La0.27FeAs2 by complementary in situ high pressure
measurements. At the critical pressure, we find that the antiferromagnetism
suddenly disappears and superconductivity simultaneously emerges at almost the
same temperature, and that the external magnetic field suppresses the
superconducting transition temperature but hardly affects the antiferromagnetic
transition temperature.
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The influence of carrier type on superconductivity has been an important
issue for understanding both conventional and unconventional superconductors
[1-7]. For elements that superconduct, it is known that hole-carriers govern
the superconductivity for transition and main group metals [8-10]. The role of
hole-carriers in elements that are not normally conducting but can be converted
to superconductors, however, remains unclear due to the lack of experimental
data. Here we report the first in-situ high pressure Hall effect measurements
on single crystal black phosphorus, measured up to ~ 50 GPa, and find a
correlation between the Hall coefficient and the superconducting transition
temperature (TC). Our results reveal that hole-carriers play a vital role in
developing superconductivity and enhancing TC. Importantly, we also find a
Lifshitz transition in the high-pressure cubic phase at ~17.2GPa, which
uncovers the origin of a puzzling valley in the superconducting TC-pressure
phase diagram. These results offer insight into the role of hole-carriers in
developing superconductivity in simple semiconducting solids under pressure.
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Non-centrosymmetric superconductors, whose crystal structure is absent of
inversion symmetry, have recently received special attentions due to the
expectation of unconventional pairings and exotic physics associated with such
pairings. The newly discovered superconductors A2Cr3As3 (A=K, Rb), featured by
the quasi-one dimensional structure with conducting CrAs chains, belongs to
such kind of superconductor. In this study, we are the first to report the
finding that the superconductivity of A2Cr3As3 (A=K, Rb) has a positive
correlation with the extent of non-centrosymmetry. Our in-situ high pressure ac
susceptibility and synchrotron x-ray diffraction measurements reveal that the
larger bond angle of As-Cr-As in the CrAs chains can be taken as a key factor
controlling superconductivity. While the smaller bond angle and the distance
between the CrAs chains also affect the superconductivity due to their
structural connections with the angle. We find that the larger value of the
difference between the larger and samller angles, which is associated with the
extent of the non-centrosymmetry of the lattice structure, is in favor of
superconductivity. These results are expected to shed a new light on the
underlying mechanism of the superconductivity in these Q1D superconductors and
also to provide new perspective in understanding other non-centrosymmetric
superconductors.
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Underlay in-band device-to-device (D2D) communication can improve the
spectrum efficiency of cellular networks. However, the coexistence of D2D and
cellular users causes inter-cell and intra-cell interference. The former can be
effectively managed through inter-cell interference coordination and,
therefore, is not considered in this work. Instead, we focus on the intra-cell
interference and propose a D2D mode selection scheme to manage it inside a
finite cellular network region. The potential D2D users are controlled by the
base station (BS) to operate in D2D mode based on the average interference
generated to the BS. Using stochastic geometry, we study the outage probability
experienced at the BS and a D2D receiver, and spectrum reuse ratio, which
quantifies the average fraction of successfully transmitting D2D users. The
analysis shows that the outage probability at the D2D receiver varies for
different locations. Additionally, without impairing the performance at the BS,
if the path-loss exponent on the cellular link is slightly lower than that on
the D2D link, the spectrum reuse ratio can have negligible decrease while the
D2D users' average number of successful transmissions increases with increasing
D2D node density. This indicates that an increasing level of D2D communication
can be beneficial in future networks..
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SmB6 is a promising candidate material that promises to elucidate the
connection between strong correlations and topological electronic states, which
is a major challenge in condensed matter physics. The electron correlations are
responsible for the development of multiple gaps in SmB6, whose elucidation is
sorely needed. Here we do so by studying the evolutions of the gaps and other
corresponding behaviors under pressure. Our measurements of the valence, Hall
effect and electrical resistivity clearly identify the gap which is associated
with the bulk Kondo hybridization and, moreover, uncover a pressure-induced
quantum phase transition from the putative topological Kondo insulating state
to a Fermi-liquid state at ~4 GPa. We provide the evidences for the transition
by a jump of inverse Hall coefficient, a diverging tendency of the
electron-electron scattering coefficient and, thereby, a destruction of the
Kondo entanglement in the ground state. These effects take place in a
mixed-valence background. Our results raise the new prospect for studying
topological electronic states in quantum critical materials settings.
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In-situ hydrostatic and uniaxial high pressure studies were performed on
recently discovered CrAs-based qausi-one-dimensional superconductors A2Cr3As3
(A=K and Rb). The established Pressure-Temperature phase diagram in this study
clearly demonstrates that either hydrostatic pressure or uniaxial pressure
globally suppresses the superconducting transition temperature (Tc), and the
latter is more effective than the former. Interestingly, in the same
hydrostatic pressure environment, the suppressing rate of Tc in Rb2Cr3As3 is
nearly twice as that of K2Cr3As3. Significantly, the reduced Tc in these
superconductors can fully recover to its ambient-pressure value after the
applied pressure is entirely released. Our results suggest that the bonding
distance and angle between Cr-Cr in the Cr3As3 chains are the key factor in
determining Tc and that the optimal lattice for superconductivity is hosted in
the pristine K2Cr3As3.
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We report comprehensive high pressure studies on correlation between
intercalated magnetic layers and superconductivity in EuFe2(As0.81P0.19)2
single crystal through in-situ high pressure resistance, specific heat, X-ray
diffraction and X-ray absorption measurements. We find that an unconfirmed
magnetic order of the intercalated layers coexists with superconductivity in a
narrow pressure range 0-0.5GPa, and then it converts to a ferromagnetic (FM)
order at pressure above 0.5 GPa, where its superconductivity is absent. The
obtained temperature-pressure phase diagram clearly demonstrates that the
unconfirmed magnetic order can emerge from the superconducting state. In stark
contrast, the superconductivity cannot develop from the FM state that is
evolved from the unconfirmed magnetic state. High pressure X-ray absorption
(XAS) measurements reveal that the pressure-induced enhancement of Eu's mean
valence plays an important role in suppressing the superconductivity and tuning
the transition from the unconfirmed magnetic state to a FM state. The unusual
interplay among valence state of Eu ions, magnetism and superconductivity under
pressure may shed new light on understanding the role of the intercalated
magnetic layers in Fe-based superconductors.
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Topological insulators (TIs) containing 4f electrons have recently attracted
intensive interests due to the possible interplay of their non-trivial
topological properties and strong electronic correlations. YbB6 and SmB6 are
the prototypical systems with such unusual properties, which may be tuned by
external pressure to give rise to new emergent phenomena. Here, we report the
first observation, through in-situ high pressure resistance, Hall, X-ray
diffraction and X-ray absorption measurements, of two pressure-induced quantum
phase transitions (QPTs) in YbB6. Our data revealthat the two insulating phases
are separated by a metallic phase due to the pressure-driven valence change of
Yb f-orbitals. In combination with previous studies, our results suggest that
the two insulating states may be topologically different in nature and
originate from the d-p and d-f hybridization, respectively. The tunable
topological properties of YbB6 revealed in this study may shed light on the
intriguing correlation between the topology and the 4f electrons from the
perspective of pressure dependent studies.
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We report the first observation of a pressure-induced breakdown of the 3D-DSM
state in Cd3As2, evidenced by a series of in-situ high-pressure synchrotron
X-ray diffraction (XRD) and single crystal transport measurements. We find that
Cd3As2 undergoes a structural phase transition from a metallic tetragonal (T)
phase in space group I41/acd to a semiconducting monoclinic (M) phase in space
group P21/c at critical pressure 2.57 GPa, above this pressure, an activation
energy gap appears, accompanied by distinct switches in Hall resistivity slope
and electron mobility. These changes of crystal symmetry and corresponding
transport properties manifest the breakdown of the 3D-DSM state in pressurized
Cd3As2.
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The recent discovery of large and non-saturating magnetoresistance (LMR) in
WTe2 provides a unique playground to find new phenomena and significant
perspective for potential applications. Here we report the first observation of
superconductivity near the proximity of suppressed LMR state in pressurized
WTe2 through high-pressure synchrotron X-ray diffraction, electrical
resistance, magnetoresistance, and ac magnetic susceptibility measurements. It
is found that the positive magnetoresistance effect can be turned off at a
critical pressure of 10.5 GPa without crystal structure change and
superconductivity emerges simultaneously. The maximum superconducting
transition temperature can be reached to 6.5 K at ~15 GPa and it decreases down
to 2.6 K at ~25 GPa. In-situ high pressure Hall coefficient measurements at 10
K demonstrate that elevating pressure decreases hole carrier's population but
increases electron carrier's population. Significantly, at the critical
pressure, we observed a sign change in the Hall coefficient, indicating a
possible Lifshitz-type quantum phase transition in WTe2.
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This paper analyzes the performance of the primary and secondary users (SUs)
in an arbitrarily-shaped underlay cognitive network. In order to meet the
interference threshold requirement for a primary receiver (PU-Rx) at an
arbitrary location, we consider different SU activity protocols which limit the
number of active SUs. We propose a framework, based on the moment generating
function (MGF) of the interference due to a random SU, to analytically compute
the outage probability in the primary network, as well as the average number of
active SUs in the secondary network. We also propose a cooperation-based SU
activity protocol in the underlay cognitive network which includes the existing
threshold-based protocol as a special case. We study the average number of
active SUs for the different SU activity protocols, subject to a given outage
probability constraint at the PU and we employ it as an analytical approach to
compare the effect of different SU activity protocols on the performance of the
primary and secondary networks.
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A unique platform for investigating the correlation between the
antiferromagnetic (AFM) and superconducting (SC) states in high temperature
superconductors is created by the discovery of alkaline iron selenide
superconductors which are composed of an AFM insulating phase and a SC phase
separated spatially. Our previous studies showed that pressure can fully
suppress the superconductivity of ambient-pressure superconducting phase (SC-I)
and AFM order simultaneously, then induce another superconducting phase (SC-II)
at higher pressure. Consequently, the connection between the two
superconducting phases becomes an intriguing issue. In this study, on the basis
of observing pressure-induced reemergence of superconductivity in
Rb0.8Fe2-ySe2-xTex (x=0, 0.19 and 0.28) superconductors, we find that the
superconductivity of the SC-I and SC-II phases as well as the AFM ordered state
can be synchronously tuned by Te doping and disappear together at the doping
level of x=0.4. We propose that the two superconducting phases are connected by
the AFM phase, in other words, the state of long-ranged AFM order plays a role
in giving rise to superconductivity of the SC-I phase, while the fluctuation
state of the suppressed AFM phase drives the emergence of SC-II phase. These
results comprehensively demonstrate the versatile roles of AFM states in
stabilizing and developing superconductivity in the alkaline iron selenide
superconductors.
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Schottky barrier field-effect transistors (SBFETs) based on few and mono
layer phosphorene are simulated by the non-equilibrium Green's function
formalism. It is shown that scaling down the gate oxide thickness results in
pronounced ambipolar I-V characteristics and significant increase of the
minimal leakage current. The problem of leakage is especially severe when the
gate insulator is thin and the number of layer is large, but can be effectively
suppressed by reducing phosphorene to mono or bilayer. Different from
two-dimensional graphene and layered dichalcogenide materials, both the
ON-current of the phosphorene SBFETs and the metal-semiconductor contact
resistance between metal and phosphorene strongly depend on the transport
crystalline direction.
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A vertical transistor based on a double gated, atomically thin heterojunction
is theoretically examined. Both p-type and n-type transistor operations can be
conveniently achieved by using one of the two gates as the switching gate. The
transistor shows excellent saturation of output I-V characteristics due to
drain-induced depletion and lack of tunneling barrier layers. The subthreshold
slope could be below the thermionic limit due to band filtering as the
switching mechanism. The atomically thin vertical PN heterojunction can be
electrostatically modulated from a type II heterojunction to a broken bandgap
alignment, which is preferred for maximizing the on-current.
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Ballistic device performance of monolayer black phosphorous (BP) field-effect
transistors (FET) is investigated in this work. Due to the anisotropic effect
mass of the carriers, the ON-state current is dependent on the transport
direction. The effective masses are lower in the "armchair" direction which
provides higher drive current at the same biasing. The degree of anisotropy is
higher for the holes, which improves the performance of p-type devices. The
intrinsic delay of 20 nm BP FETs is in the range of 50 fs at ON-/OFF-current
ratio of 4 orders. Monolayer BP FETs outperform both MoS$_2$ and Si FETs for
both n- and p-type devices in terms of ballistic performance limits, due to
highly anisotropic band structure.