• A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 minutes, of a graphene film of 5 x 50 cm2 dimension with > 99% ultra-highly oriented grains. This growth was achieved by: (i) synthesis of sub-metre-sized single-crystal Cu(111) foil as substrate; (ii) epitaxial growth of graphene islands on the Cu(111) surface; (iii) seamless merging of such graphene islands into a graphene film with high single crystallinity and (iv) the ultrafast growth of graphene film. These achievements were realized by a temperature-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ~ 23,000 cm2V-1s-1 at 4 K and room temperature sheet resistance of ~ 230 ohm/square. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.
  • A large and high-quality single crystal (Li0.84Fe0.16)OHFe0.98Se, the optimal superconductor of newly reported (Li1-xFex)OHFe1-ySe system, has been successfully synthesized via a hydrothermal ion-exchange technique. The superconducting transition temperature (Tc) of 42 K is determined by magnetic susceptibility and electric resistivity measurements, and the zero-temperature upper critical magnetic fields are evaluated as 79 and 313 Tesla for the field along the c-axis and the ab-plane, respectively. The ratio of out-of-plane to in-plane electric resistivity,\r{ho}c/\r{ho}ab, is found to increases with decreasing temperature and to reach a high value of 2500 at 50 K, with an evident kink occurring at a characteristic temperature T*=120 K. The negative in-plane Hall coefficient indicates that electron carriers dominate in the charge transport, and the hole contribution is significantly reduced as the temperature is lowered to approach T*. From T* down to Tc, we observe the linear temperature dependences of the in-plane electric resistivity and the magnetic susceptibility for the FeSe layers. Our findings thus reveal that the normal state of (Li0.84Fe0.16)OHFe0.98Se becomes highly two-dimensional and anomalous prior to the superconducting transition, providing a new insight into the mechanism of high-Tc superconductivity.
  • In the history of condensed matter physics, reinvestigation of a well-studied material with enhanced quality sometimes led to important scientific discoveries. A well-known example is the discovery of fractional quantum Hall effect in high quality GaAs/AlGaAs heterojunctions. Here we report the first single crystal growth and magnetoresistance (MR) measurements of the silver chalcogenide $\beta $-Ag$_2$Se (Naumannite), a compound has been known for the unusual, linear-field-dependent MR in its polycrystalline form for over a decade. With the quantum limit (QL) as low as 3 Tesla, a moderate field produced by a superconductor magnet available in many laboratories can easily drive the electrons in Ag$_2$Se to an unprecedented state. We observed significant negative longitudinal MR beyond the QL, which was understood as a `charge-pumping' effect between the novel fermions with opposite chiralities. Characterization of the single-crystalline Ag$_2$Se and the fabrication of electric devices working above the QL, will represent a new direction for the study of these exotic electrons.