
Pointcontact spectroscopy of several nonsuperconducting topological
materials reveals a low temperature phase transition that is characterized by a
BardeenCooperSchrieffertype of criticality. We find such a behavior of
differential conductance for topological surfaces of nonmagnetic and magnetic
Pb$_{1yx}$Sn$_y$Mn$_x$Te. We examine a possible contribution from
superconducting nanoparticles, and show to what extent our data are consistent
with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations
to a collective state adjacent to atomic steps at topological surfaces.

We demonstrate that the metallic topological surface states wrap on all sides
the 3D topological crystalline insulator SnTe. This is achieved by studying
oscillatory quantum magnetotransport and magnetization at tilted magnetic
fields which enables us to observe simultaneous contributions from neighbouring
sample sides. Taking into account pinning of the Fermi energy by the SnTe
reservoir we successfully describe theoretically the de Haasvan Alphen
oscillations of magnetization. The determined \piBerry phase of surface states
confirms their Dirac fermion character. We independently observe oscillatory
contributions of magnetotransport and magnetization originating from the bulk
SnTe reservoir of high hole density. It is concluded that the bulk and surface
Landau states exist in parallel. Our main result that the bulk reservoir is
surrounded on all sides by the topological surface states has an universal
character.

The transverse Nernst Ettingshausen (NE) effect and electron mobility in
Pb$_{1x}$Sn$_x$Se alloys are studied experimentally and theoretically as
functions of temperature and chemical composition in the vicinity of vanishing
energy gap $E_g$. The study is motivated by the recent discovery that, by
lowering the temperature, one can change the band ordering from trivial to
nontrivial one in which the topological crystalline insulator states appear at
the surface. Our work presents several new aspects. It is shown experimentally
and theoretically that the bulk NE effect has a maximum when the energy gap
$E_g$ of the mixed crystal goes through zero value. This result contradicts the
claim made in the literature that the NE effect changes sign when the gap
vanishes. We successfully describe $dc$ transport effects in the situation of
extreme band's nonparabolicity which, to the best of our knowledge, has never
been tried before. A situation is reached in which both twodimensional bands
(topological surface states) and threedimensional bands are linear in electron
\textbf{k} vector. Various scattering modes and their contribution to transport
phenomena in Pb$_{1x}$Sn$_x$Se are analyzed. As the energy gap goes through
zero, some transport integrals have a singular (nonphysical) behaviour and we
demonstrate how to deal with this problem by introducing damping.

Topological insulators are a novel class of quantum materials in which
timereversal symmetry, relativistic (spinorbit) effects and an inverted band
structure result in electronic metallic states on the surfaces of bulk
crystals. These helical states exhibit a Diraclike energy dispersion across
the bulk bandgap, and they are topologically protected. Recent theoretical
proposals have suggested the existence of topological crystalline insulators, a
novel class of topological insulators in which crystalline symmetry replaces
the role of timereversal symmetry in topological protection [1,2]. In this
study, we show that the narrowgap semiconductor Pb(1x)Sn(x)Se is a
topological crystalline insulator for x=0.23. Temperaturedependent
magnetotransport measurements and angleresolved photoelectron spectroscopy
demonstrate that the material undergoes a temperaturedriven topological phase
transition from a trivial insulator to a topological crystalline insulator.
These experimental findings add a new class to the family of topological
insulators. We expect these results to be the beginning of both a considerable
body of additional research on topological crystalline insulators as well as
detailed studies of topological phase transitions.

Thermoelectric power, electrical conductivity, and high field Hall effect
were studied over a broad temperature range in ferromagnetic Ga(1x)Mn(x)As
epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the
information about carrier transport mechanisms in layers with both metallic and
nonmetallic type of conductivity and allows determination of the Fermi energy
and carrier concentration. At high temperatures (T>70 K) the thermoelectric
power in GaMnAs linearly increases with increasing temperature. That indicates
the presence of a degenerate hole gas with the Fermi energy EF=220+25 meV,
nearly independent of Mn content (for 0.02<x<0.05). At lower temperatures
GaMnAs layers with metallictype conductivity show an additional contribution
to the thermoelectric power with the maximum close to the Curie temperature.
The layers exhibiting insulating electrical properties show 1/Ttype increase
of thermoelectric power at low temperatures.

Using different experimental techniques we examine the dynamical scaling of
the quantum Hall plateau transition in a frequency range f = 0.155 GHz. We
present a scheme that allows for a simultaneous scaling analysis of these
experiments and all other data in literature. We observe a universal scaling
function with an exponent kappa = 0.5 +/ 0.1, yielding a dynamical exponent z
= 0.9 +/ 0.2.