
Here we describe a new high frequency/high field continuous wave and pulsed
electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating
at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in
illuminated hydrogenated amorphous silicon pin solar cells at 5 K and 90 K
was studied by in operando 263 GHz CW and pEDMR alongside with complementary
Xband CW EDMR. Benefiting from the superior resolution at 263 GHz, we were
able to better resolve EDMR signals originating from spin dependent hopping and
recombination processes. 5 K EDMR spectra were found to be dominated by
conduction and valence band tale states involved in spin dependent hopping,
with additional contributions from triplet exciton states. 90 K EDMR spectra
could be assigned to spin pair recombination involving conduction band tail
states and dangling bonds as dominating spin dependent transport process, with
additional contributions from valence band tail and triplet exciton states.

Multifrequency pulsed electron paramagnetic resonance (EPR) spectroscopy
using S, X, Q and WBand frequencies (3.6, 9.7, 34, and 94 GHz,
respectively) was employed to study paramagnetic coordination defects in
undoped hydrogenated amorphous silicon (aSi:H). The improved spectral
resolution at high magnetic field reveals a rhombic splitting of the gtensor
with the following principal values: g_x=2.0079, g_y=2.0061 and g_z=2.0034 and
shows pronounced gstrain, i.e., the principal values are widely distributed.
The multifrequency approach furthermore yields precise ^{29}Si hyperfine data.
Density functional theory (DFT) calculations on 26 computergenerated aSi:H
danglingbond models yielded gvalues close to the experimental data but
deviating hyperfine interaction values. We show that paramagnetic coordination
defects in aSi:H are more delocalized than computergenerated danglingbond
defects and discuss models to explain this discrepancy.

The effect of exchange interactions within spin pairs on spindependent
transport and recombination rates through localized states in semiconductors
during coherent electron spin resonant excitation is studied theoretically. It
is shown that for identical spin systems, significant quantitative differences
are to be expected between the results of pEDMR/pODMR experiments were
permutation symmetry is the observable as compared to pESR experiments with
polarization as the observable. It is predicted that beat oscillations of the
spin nutations and not the nutations themselves dominate the transport or
recombination rates when the exchange coupling strength or the field strength
of the exciting radiation exceed the difference of the Zeeman energies within
the spin pair. Furthermore, while the intensities of the rate oscillations
decrease with increasing exchange within the spin pairs, the singlet and
triplet signals retain their relative strength. This means that pEDMR and pODMR
experiments could allow better experimental access to ESR forbidden singlet
transitions which are hardly or not at all accessible with conventional pulsed
electron spin resonance spectroscopy.

An experimental demonstration of electrical detection of coherent spin motion
of weakly coupled, localized electron spins in thin Fullerene C60 films at room
temperature is presented. Pulsed electrically detected magnetic resonance
experiments on vertical photocurrents through Al/C60/ZnO samples showed that an
electron spin Rabi oscillation is reflected by transient current changes. The
nature of possible microscopic mechanisms responsible for this spin to charge
conversion as well as its implications for the readout of endohedral Fullerene
(N@C60) spin qubits are discussed.

Semianalytical predictions for the transients of spindependent transport
and recombination rates through localized states in semiconductors during
coherent electron spin excitation are made for the case of weakly spincoupled
charge carrier ensembles. The results show that the onresonant Rabi frequency
of electrically or optically detected spinoscillation doubles abruptly as the
strength of the resonant microwave field gamma B_1 exceeds the Larmor frequency
separation within the pair of charge carrier states between which the transport
or recombination transition takes place. For the case of a Larmor frequency
separation of the order of gamma B_1 and arbitrary excitation frequencies, the
charge carrier pairs exhibit four different nutation frequencies. From the
calculations, a simple set of equations for the prediction of these frequencies
is derived.

In recent years, a variety of solidstate qubits has been realized, including
quantum dots, superconducting tunnel junctions and point defects. Due to its
potential compatibility with existing microelectronics, the proposal by Kane
based on phosphorus donors in Si has also been pursued intensively. A key issue
of this concept is the readout of the P quantum state. While electrical
measurements of magnetic resonance have been performed on single spins, the
statistical nature of these experiments based on random telegraph noise
measurements has impeded the readout of single spin states. In this letter, we
demonstrate the measurement of the spin state of P donor electrons in silicon
and the observation of Rabi flops by purely electric means, accomplished by
coherent manipulation of spindependent charge carrier recombination between
the P donor and paramagnetic localized states at the Si/SiO2 interface via
pulsed electrically detected magnetic resonance. The electron spin information
is shown to be coupled through the hyperfine interaction with the P nucleus,
which demonstrates the feasibility of a recombinationbased readout of nuclear
spins.