
Black phosphorus (BP) has emerged as a promising material candidate for next
generation electronic and optoelectronic devices due to its high mobility,
tunable band gap and highly anisotropic properties. In this work, polarization
resolved ultrafast midinfrared transient reflection spectroscopy measurements
are performed to study the dynamical anisotropic optical properties of BP under
magnetic fields up to 9 T. The relaxation dynamics of photoexcited carrier is
found to be insensitive to the applied magnetic field due to the broadening of
the Landau levels and large effective mass of carriers. While the anisotropic
optical response of BP decreases with increasing magnetic field, its
enhancement due to the excitation of hot carriers is similar to that without
magnetic field. These experimental results can be well interpreted by the
magnetooptical conductivity of the Landau levels of BP thin film, based on an
effective k*p Hamiltonian and linear response theory. These findings suggest
attractive possibilities of multidimensional controls of anisotropic response
(AR) of BP with light, electric and magnetic field, which further introduces BP
to the fantastic magnetic field sensitive applications.

The carriermediated RKKY interaction between local spins plays an important
role for the application of magnetically doped graphene in spintronics and
quantum computation. Previous studies largely concentrate on the influence of
electronic states of uniform systems on the RKKY interaction. Here we reveal a
very different way to manipulate the RKKY interaction by showing that the
anomalous focusing  a wellknown electron optics phenomenon in graphene PN
junctions  can be utilized to refocus the massless Dirac electrons emanating
from one local spin to the other local spin. This gives rise to rich spatial
interference patterns and symmetryprotected nonoscillatory RKKY interaction
with a strongly enhanced magnitude. It may provide a new way to engineer the
longrange spinspin interaction in graphene.

We report on a class of quantum spin Hall insulators (QSHIs) in
strainedlayer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced
by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with
consequently increasing edge velocity, the edge conductance at zero and applied
magnetic fields manifests time reversal symmetry (TRS) protected properties
consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much
soughtafter platform for future studies and applications of the QSHI.

We theoretically propose that, the single crystal formed TaS is a new type of
topological semimetal, hosting ringshaped gapless nodal lines and triply
degenerate points (TDPs) in the absence of spinorbit coupling (SOC). In the
presence of SOC, the each TDP splits into four TDPs along the high symmetric
line in the momentum space, and one of the nodal ring remains closed due to the
protection of the mirror reflection symmetry, while another nodal ring is fully
gapped and transforms into six pairs ofWeyl points (WPs) carrying opposite
chirality. The electronic structures of the projected surfaces are also
discussed, the unique Fermi arcs are observed and the chirality remains or
vanishes depending on the projection directions. On the (010) projected
surface, one may observe a Lifshitz transition. The new type of topological
semimetal TaS is stable and experimentally achievable, and the coexistence of
topological nodal lines, WPs and TDPs states in TaS makes it a potential
candidate to study the interplay between different types of topological
fermions.

This work presents theoretical demonstration of AharonovBohm (AB) effect in
monolayer phosphorene nanorings (PNR). Atomistic quantum transport simulations
of PNR are employed to investigate the impact of multiple modulation sources on
the sample conductance. In presence of a perpendicular magnetic field, we find
that the conductance of both armchair and zigzag PNR oscillate periodically in
a lowenergy window as a manifestation of the AB effect. Our numerical results
have revealed a giant magnetoresistance (MR) in zigzag PNR (with a maximum
magnitude approaching two thousand percent). It is attributed to the AB effect
induced destructive interference phase in a wide energy range below the bottom
of the second subband. We also demonstrate that PNR conductance is highly
anisotropic, offering an additional way to modulate MR. The giant MR in PNR is
maintained at room temperature in the presence of thermal broadening effect.

Timereversal ($\mathcal{T}$) symmetry is fundamental to many physical
processes. Typically, $\mathcal{T}$breaking for microscopic processes requires
the presence of magnetic field. However, for 2D massless Dirac billiards,
$\mathcal{T}$symmetry is broken automatically by the mass confinement, leading
to chiral quantum scars. In this paper, we investigate the mechanism of
$\mathcal{T}$breaking by analyzing the local current of the scarring
eigenstates and their magnetic response to an AharonovBohm flux. Our results
unveil the complete understanding of the subtle $\mathcal{T}$breaking
phenomena from both the semiclassical formula of chiral scars and the
microscopic current and spin reflection at the boundaries, leading to a
controlling scheme to change the chirality of the relativistic quantum scars.
Our findings not only have significant implications on the transport behavior
and spin textures of the relativistic pseudoparticles, but also add basic
knowledge to relativistic quantum chaos.

The integration of different twodimensional materials within a multilayer
van der Waals (vdW) heterostructure offers a promising technology for realizing
high performance optoelectronic devices such as photodetectors and light
sources13. Transition metal dichalcogenides, e.g. MoS2 and WSe2, have been
employed as the opticallyactive layer in recently developed heterojunctions.
However, MoS2 and WSe2 become direct band gap semiconductors only in mono or
bilayer form4,5. In contrast, the metal monochalcogenides InSe and GaSe retain
a direct bandgap over a wide range of layer thicknesses from bulk crystals down
to exfoliated flakes only a few atomic monolayers thick6,7. Here we report on
vdW heterojunction diodes based on InSe and GaSe: the type II band alignment
between the two materials and their distinctive spectral response, combined
with the low electrical resistance of transparent graphene electrodes, enable
effective separation and extraction of photoexcited carriers from the
heterostructure even when no external voltage is applied. Our devices are fast
(< 10 {\mu}s), selfdriven photodetectors with multicolor photoresponse ranging
from the ultraviolet to the nearinfrared and have the potential to accelerate
the exploitation of twodimensional vdW crystals by creating new routes to
miniaturized optoelectronics beyond present technologies.

The singleparticle Green's function (GF) of mesoscopic structures plays a
central role in mesoscopic quantum transport. The recursive GF technique is a
standard tool to compute this quantity numerically, but it lacks physical
transparency and is limited to relatively small systems. Here we present a
numerically efficient and physically transparent GF formalism for a general
layered structure. In contrast to the recursive GF that directly calculates the
GF through the Dyson equations, our approach converts the calculation of the GF
to the generation and subsequent propagation of a scattering wave function
emanating from a local excitation. This viewpoint not only allows us to
reproduce existing results in a concise and physically intuitive manner, but
also provides analytical expressions of the GF in terms of a generalized
scattering matrix. This identifies the contributions from each individual
scattering channel to the GF and hence allows this information to be extracted
quantitatively from dualprobe STM experiments. The simplicity and physical
transparency of the formalism further allows us to treat the multiple
reflection analytically and derive an analytical rule to construct the GF of a
general layered system. This could significantly reduce the computational time
and enable quantum transport calculations for large samples. We apply this
formalism to perform both analytical analysis and numerical simulation for the
twodimensional conductance map of a realistic graphene pn junction. The
results demonstrate the possibility of observing the spatiallyresolved
interference pattern caused by negative refraction and further reveal a few
interesting features, such as the distanceindependent conductance and its
quadratic dependence on the carrier concentration, as opposed to the linear
dependence in uniform graphene.

We investigated the electronic and optoelectronic properties of vertical van
der Waals heterostructure photodetectors using layered p type GaSe and n type
InSe, with graphene as the transparent electrodes. Not only the photocurrent
peaks from the layered GaSe and InSe themselves were observed, also the
interlayer optical transition peak was observed, which is consistent with the
firstprinciples calculation. The builtin electric field between pn
heterojunction and the advantage of the graphene electrodes can effectively
separate the photoinduced electronhole pairs, and thus lead to the response
time down to 160 {\mu}s. Making use of the interlayer as well as intralayer
optical transitions of the vertical layered pn heterostructure and graphene
electrodes, we could achieve high performance multicolor photodetectors based
on twodimensional layered materials, which will be important for future
optoelectronics.

We demonstrate theoretically the coexistence of Dirac semimetal and
topological insulator phases in InSb/$\alpha$Sn conventional semiconductor
superlattices, based on advanced firstprinciples calculations combined with
lowenergy $k\cdot p$ theory. By proper interfaces designing, a large interface
polarization emerges when the growth direction is chosen along {[}111{]}. Such
an intrinsic polarized electrostatic field reduces band gap largely and invert
the band structure finally, leading to emerge of the topological Dirac
semimetal phase with a pair of Dirac nodes appearing along the (111)
crystallographic direction near the $\Gamma$ point. The surface states and
Fermi arc are clearly observed in (100) projected surface. In addition, we also
find a twodimensional topological insulator phase with large nontrivial band
gap approaching 70 meV, which make it possible to observe the quantum spin Hall
effect at room temperature. Our proposal paves a way to realize topological
nontrivial phases coexisted in conventional semiconductor superlattices by
proper interface designing.

We predict a novel quantum interference based on the negative refraction
across a semiconductor PN junction: with a local pump on one side of the
junction, the response of a local probe on the other side behaves as if the
disturbance emanates not from the pump but instead from its mirror image about
the junction. This phenomenon is guaranteed by translational invariance of the
system and matching of Fermi surfaces of the constituent materials, thus it is
robust against other details of the junction (e.g., junction width, potential
profile, and even disorder). The recently fabricated PN junctions in 2D
semiconductors provide ideal platforms to explore this phenomenon and its
applications to dramatically enhance charge and spin transport as well as
carriermediated longrange correlation.

We propose an experimentally feasible scheme for generating entangled
terahertz photon pairs in topological insulator quantum dots (TIQDs). We
demonstrate theoretically that in generic TIQDs: 1) the fine structure
splitting, which is the obstacle to produce entangled photons in conventional
semiconductor quantum dots, is inherently absent for onedimensional massless
excitons due to the timereversal symmetry; 2) the selection rules obey winding
number conservation instead of the conventional angular momentum conservation
between edge states with a linear dispersion. With these two advantages, the
entanglement of the emitted photons during the cascade in our scheme is robust
against unavoidable disorders and irregular shapes of the TIQDs.

We present a general theory about electron orbital motions in topological
insulators. An inplane electric field drives spinup and spindown electrons
bending to opposite directions, and skipping orbital motions, a counterpart of
the integer quantum Hall effect, are formed near the boundary of the sample.
The accompanying Zitterbewegung can be found and controlled by tuning external
electric fields. Ultrafast flipping electron spin leads to a quantum side jump
in the topological insulator, and a snakeorbit motion in twodimensional
electron gas with spinorbit interactions. This feature provides a way to
control electron orbital motion by manipulating electron spin.

We present a comparative theoretical study of the effects of standard
Anderson and magnetic disorders on the topological phases of twodimensional
Rashba spinorbit coupled superconductors, with the initial state to be either
topologically trivial or nontrivial. Using the selfconsistent Born
approximation approach, we show that the presence of Anderson disorders will
drive a topological superconductor into a topologically trivial superconductor
in the weak coupling limit. Even more strikingly, a topologically trivial
superconductor can be driven into a topological superconductor upon diluted
doping of independent magnetic disorders, which gradually narrow, close, and
reopen the quasiparticle gap in a nontrivial manner. These topological phase
transitions are distinctly characterized by the changes in the corresponding
topological invariants. The central findings made here are also confirmed using
a complementary numerical approach by solving the Bogoliubovde Gennes
equations selfconsistently within a tightbinding model. The present study
offers appealing new schemes for potential experimental realization of
topological superconductors.

It was proposed that a dilute semimetal is unstable against the formation of
an exciton insulator, however experimental confirmations have remained elusive.
We investigate the origin of bulk energy gap in inverted InAs/GaSb quantum
wells (QWs) which naturally host spatiallyseparated electrons and holes, using
chargeneutral point density (no~po) in gateddevice as a tuning parameter. We
find two distinct regimes of gap formation, that for I), no >> 5x1010/cm2, a
soft gap opens predominately by electronhole hybridization; and for II),
approaching the dilute limit no~ 5x1010/cm2, a hard gap opens leading to a true
bulk insulator with quantized edge states. Moreover, the gap is dramatically
reduced as the QWs are tuned to less dilute. We further examine the response of
gaps to inplane magnetic fields, and find that for I) the gap closes at B// >
~ 10T, consistent with hybridization while for II) the gap opens continuously
for B// as high as 35T. Our analyses show that the hard gap in II) cannot be
explained by singleparticle hybridization. The data are remarkably consistent
with the formation of a nontrivial exciton insulator in very dilute InAs/GaSb
QWs.

We theoretically investigate the electronic and magnetooptical properties of
rectangular, hexangular, and triangular monolayer phosphorene quantum dots
(MPQDs) utilizing the tightbinding method. The electronic states, density of
states, electronic density distribution, and Laudau levels as well as the
optical absorption spectrum are calculated numerically. Our calculations show
that: (1) edge states appear in the band gap in all kinds of MPQDs regardless
of their shapes and edge configurations due to the anisotropic electron hopping
in monolayer phosphorene (MLP). Electrons in any edge state appear only in the
armchair direction of the dot boundary, which is distinct from that in graphene
quantum dots; (2) the magnetic levels of MPQDs exhibit a Hofstadterbutterfly
spectrum and approach the Landau levels of MLP as the magnetic field increases
. A "flat band" appears in the magnetoenergy spectrum which is totally
different from that of MLP; (3) the electronic and optical properties can be
tuned by the dot size, the types of boundary edges and the external magnetic
field.

Development of new, high quality functional materials has been at the
forefront of condensed matter research. The recent advent of twodimensional
black phosphorus has greatly enriched the material base of twodimensional
electron systems. Significant progress has been made to achieve high mobility
black phosphorus twodimensional electron gas (2DEG) since the development of
the first black phosphorus fieldeffect transistors (FETs)$^{14}$. Here, we
reach a milestone in developing high quality black phosphorus 2DEG  the
observation of integer quantum Hall (QH) effect. We achieve high quality by
embedding the black phosphorus 2DEG in a van der Waals heterostructure close to
a graphite back gate; the graphite gate screens the impurity potential in the
2DEG, and brings the carrier Hall mobility up to 6000 $cm^{2}V^{1}s^{1}$. The
exceptional mobility enabled us, for the first time, to observe QH effect, and
to gain important information on the energetics of the spinsplit Landau levels
in black phosphorus. Our results set the stage for further study on quantum
transport and device application in the ultrahigh mobility regime.

Based on the BornOppemheimer approximation, we divide total electron
Hamiltonian in a spinorbit coupled system into slow orbital motion and fast
interband transition process. We find that the fast motion induces a gauge
field on slow orbital motion, perpendicular to electron momentum, inducing a
topological phase. From this general designing principle, we present a theory
for generating artificial gauge field and topological phase in a conventional
twodimensional electron gas embedded in parabolically graded
GaAs/In$_{x}$Ga$_{1x}$As/GaAs quantum wells with antidot lattices. By tuning
the etching depth and period of antidot lattices, the band folding caused by
superimposed potential leads to formation of minibands and band inversions
between the neighboring subbands. The intersubband spinorbit interaction opens
considerably large nontrivial minigaps and leads to many pairs of helical edge
states in these gaps.

We investigate theoretically the Landau levels (LLs) and magnetotransport
properties of phosphorene under a perpendicular magnetic field within the
framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and
tightbinding (TB) model. At low field regime, we find that the LLs linearly
depend both on the LL index $n$ and magnetic field $B$, which is similar with
that of conventional semiconductor twodimensional electron gas. The Landau
splittings of conduction and valence band are different and the wavefunctions
corresponding to the LLs are strongly anisotropic due to the different
anisotropic effective masses. An analytical expression for the LLs in low
energy regime is obtained via solving the decoupled Hamiltonian, which agrees
well with the numerical calculations. At high magnetic regime, a selfsimilar
Hofstadter butterfly (HB) spectrum is obtained by using the TB model. The HB
spectrum is consistent with the Landau level fan calculated from the effective
\textbf{\emph{k$\cdot$p}} theory in a wide regime of magnetic fields. We find
the LLs of phosphorene nanoribbon depend strongly on the ribbon orientation due
to the anisotropic hopping parameters. The Hall and the longitudinal
conductances (resistances) clearly reveal the structure of LLs.

The stoichiometric "111" ironbased superconductor, LiFeAs, has attacted
great research interest in recent years. For the first time, we have
successfully grown LiFeAs thin film by molecular beam epitaxy (MBE) on
SrTiO3(001) substrate, and studied the interfacial growth behavior by
reflection high energy electron diffraction (RHEED) and lowtemperature
scanning tunneling microscope (LTSTM). The effects of substrate temperature
and Li/Fe flux ratio were investigated. Uniform LiFeAs film as thin as 3
quintuplelayer (QL) is formed. Superconducting gap appears in LiFeAs films
thicker than 4 QL at 4.7 K. When the film is thicker than 13 QL, the
superconducting gap determined by the distance between coherence peaks is about
7 meV, close to the value of bulk material. The ex situ transport measurement
of thick LiFeAs film shows a sharp superconducting transition around 16 K. The
upper critical field, Hc2(0)=13.0 T, is estimated from the temperature
dependent magnetoresistance. The precise thickness and quality control of
LiFeAs film paves the road of growing similar ultrathin iron arsenide films.

We investigate theoretically the electronic structure of graphene and boron
nitride (BN) lateral heterostructures, which were fabricated in recent
experiments. The firstprinciples density functional calculation demonstrates
that a huge intrinsic transverse electric field can be induced in the graphene
nanoribbon region, and depends sensitively on the edge configuration of the
lateral heterostructure. The polarized electric field originates from the
charge mismatch at the BNgraphene interfaces. This huge electric field can
open a significant bang gap in graphene nanoribbon, and lead to fully
spinpolarized edge states and induce halfmetallic phase in the lateral
BN/Graphene/BN heterostructure with proper edge configurations.

We investigate the scattering and localization properties of edge and bulk
states in a disordered twodimensional topological insulator when they coexist
at the same fermi energy. Due to edgebulk backscattering (which is not
prohibited \emph{a priori} by topology or symmetry), Anderson disorder makes
the edge and bulk states localized indistinguishably. Two methods are proposed
to effectively decouple them and to restore robust transport. The first kind of
decouple is from long range disorder, since edge and bulk states are well
separated in $k$ space. The second one is from an edge gating, owing to the
edge nature of edge states in real space. The latter can be used to
electrically tune a system between an Anderson insulator and a topologically
robust conductor, i.e., a realization of a topological transistor.

The application of a perpendicular electric field can drive silicene into a
gapless state, characterized by two nearly fully spinpolarized Dirac cones
owing to both relatively large spinorbital interactions and inversion symmetry
breaking. Here we argue that since intervalley scattering from nonmagnetic
impurities is highly suppressed by time reversal symmetry, the physics should
be effectively singleDiraccone like. Through numerical calculations, we
demonstrate that there is no significant backscattering from a single impurity
that is nonmagnetic and unitcell uniform, indicating a stable delocalized
state. This conjecture is then further confirmed from a scaling of conductance
for disordered systems using the same type of impurities.

We demonstrate theoretically that interface engineering can drive Germanium,
one of the most commonlyused semiconductors, into topological insulating
phase. Utilizing giant electric fields generated by charge accumulation at
GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design
can reduce the sizable gap in Ge and induce large spinorbit interaction, which
lead to a topological insulator transition. Our work provides a new method on
realizing TI in commonlyused semiconductors and suggests a promising approach
to integrate it in well developed semiconductor electronic devices.

The generation of valley current is a fundamental goal in graphene
valleytronics but no practical ways of its realization are known yet. We
propose a workable scheme for the generation of bulk valley current in a
graphene mechanical resonator through adiabatic cyclic deformations of the
strains and chemical potential in the suspended region. The accompanied strain
gauge fields can break the spatial mirror symmetry of the problem within each
of the two inequivalent valleys, leading to a fnite valley current due to
quantum pumping. An allelectrical measurement configuration is designed to
detect the novel state with pure bulk valley currents.