
We review a unified approach for computing: (i) spintransfer torque in
magnetic trilayers like spinvalves and magnetic tunnel junction, where
injected charge current flows perpendicularly to interfaces; and (ii)
spinorbit torque in magnetic bilayers of the type
ferromagnet/spinorbitcoupledmaterial, where injected charge current flows
parallel to the interface. Our approach requires to construct the torque
operator for a given Hamiltonian of the device and the steadystate
nonequilibrium density matrix, where the latter is expressed in terms of the
nonequilibrium Green's functions and split into three contributions. Tracing
these contributions with the torque operator automatically yields fieldlike
and dampinglike components of spintransfer torque or spinorbit torque
vector, which is particularly advantageous for spinorbit torque where the
direction of these components depends on the unknowninadvance orientation of
the currentdriven nonequilibrium spin density in the presence of spinorbit
coupling. We provide illustrative examples by computing spintransfer torque in
a onedimensional toy model of a magnetic tunnel junction and realistic
Co/Cu/Co spinvalve, both of which are described by firstprinciples
Hamiltonians obtained from noncollinear density functional theory calculations;
as well as spinorbit torque in a ferromagnetic layer described by a
tightbinding Hamiltonian which includes spinorbit proximity effect within
ferromagnetic monolayers assumed to be generated by the adjacent monolayer
transition metal dichalcogenide.

We present a straightforward and computationally cheap method to obtain the
phononassisted photocurrent in largescale devices from firstprinciples
transport calculations. The photocurrent is calculated using nonequilibrium
Green's function with lightmatter interaction from the firstorder Born
approximation while electronphonon coupling (EPC) is included through special
thermal displacements (STD). We apply the method to a silicon solar cell device
and demonstrate the impact of including EPC in order to properly describe the
current due to the indirect bandtoband transitions. The firstprinciples
results are successfully compared to experimental measurements of the
temperature and light intensity dependence of the opencircuit voltage of a
silicon photovoltaic module. Our calculations illustrate the pivotal role
played by EPC in photocurrent modelling to avoid underestimation of the
opencircuit voltage, shortcircuit current and maximum power. This work
represents a recipe for computational characterization of future photovoltaic
devices including the combined effects of lightmatter interaction,
phononassisted tunneling and the device potential at finite bias from the
level of firstprinciples simulations.

Phononassisted tunneling plays a crucial role for electronic device
performance and even more so with future size downscaling. We show how one can
include this effect in largescale firstprinciples calculations using a single
"special thermal displacement" (STD) of the atomic coordinates at almost the
same cost as elastic transport calculations. We apply the method to
ultrascaled silicon devices and demonstrate the importance of phononassisted
bandtoband and sourcetodrain tunneling. In a diode the phonons lead to a
rectification ratio suppression in good agreement with experiments, while in an
ultrathin body transistor the phonons increase offcurrents by four orders of
magnitude, and the subthreshold swing by a factor of four, in agreement with
perturbation theory.

We present an efficient implementation of a surface Green'sfunction method
for atomistic modeling of surfaces within the framework of density functional
theory using a pseudopotential localized basis set approach. In this method,
the system is described as a truly semiinfinite solid with a surface region
coupled to an electron reservoir, thereby overcoming several fundamental
drawbacks of the traditional slab approach. The versatility of the method is
demonstrated with several applications to surface physics and chemistry
problems that are inherently difficult to address properly with the slab
method, including metal work function calculations, band alignment in thinfilm
semiconductor heterostructures, surface states in metals and topological
insulators, and surfaces in external electrical fields. Results obtained with
the surface Green'sfunction method are compared to experimental measurements
and slab calculations to demonstrate the accuracy of the approach.

The function of nanoscale devices critically depends on the choice of
materials. For electron transport junctions it is natural to characterize the
materials by their conductance length dependence, $\beta$. Theoretical
estimations of $\beta$ are made employing two primary theories: complex band
structure and DFTNEGF Landauer transport. Both reveal information on $\beta$
of individual states; i.e. complex Bloch waves and transmission eigenchannels,
respectively. However, it is unclear how the $\beta$values of the two
approaches compare. Here, we present calculations of decay constants for the
two most conductive states as determined by complex band structure and standard
DFTNEGF transport calculations for two molecular and one semiconductor
junctions. Despite the different nature of the two methods, we find strong
agreement of the calculated decay constants for the molecular junctions while
the semiconductor junction shows some discrepancies. The results presented
here provide a template for studying the intrinsic, channel resolved length
dependence of the junction through complex band structure of the central
material in the heterogeneous nanoscale junction.

ATKForceField is a software package for atomistic simulations using
classical interatomic potentials. It is implemented as a part of the Atomistix
ToolKit (ATK), which is a Python programming environment that makes it easy to
create and analyze both standard and highly customized simulations. This paper
will focus on the atomic interaction potentials, molecular dynamics, and
geometry optimization features of the software, however, many more advanced
modeling features are available. The implementation details of these algorithms
and their computational performance will be shown. We present three
illustrative examples of the types of calculations that are possible with
ATKForceField: modeling thermal transport properties in a silicon germanium
crystal, vapor deposition of selenium molecules on a selenium surface, and a
simulation of creep in a copper polycrystal.

We present evidence that band gap narrowing at the heterointerface may be a
major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS
solar cells. Band gap narrowing is caused by surface states that extend the
Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are
consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by
firstprinciples calculations. They do not simply arise from defects at
surfaces but are an intrinsic feature of Cu$_2$ZnSnS$_4$ surfaces. By including
those states in a device model, the outcome of previously published
temperaturedependent open circuit voltage measurements on Cu$_2$ZnSnS$_4$
solar cells can be reproduced quantitatively without necessarily assuming a
clifflike conduction band offset with the CdS buffer layer. Our
firstprinciples calculations indicate that Znbased alternative buffer layers
are advantageous due to the ability of Zn to passivate those surface states.
Focusing future research on Znbased buffers is expected to significantly
improve the open circuit voltage and efficiency of puresulfide Cu$_2$ZnSnS$_4$
solar cells.

The geometry and structure of an interface ultimately determines the behavior
of devices at the nanoscale. We present a generic method to determine the
possible lattice matches between two arbitrary surfaces and to calculate the
strain of the corresponding matched interface. We apply this method to explore
two relevant classes of interfaces for which accurate structural measurements
of the interface are available: (i) the interface between pentacene crystals
and the (111) surface of gold, and (ii) the interface between the semiconductor
indiumarsenide and aluminum. For both systems, we demonstrate that the
presented method predicts interface geometries in good agreement with those
measured experimentally, which present nontrivial matching characteristics and
would be difficult to guess without relying on automated structuresearching
methods.

We present a conceptually simple method for treating electronphonon
scattering and phonon limited mobilities. By combining Green's function based
transport calculations and molecular dynamics (MD), we obtain a temperature
dependent transmission from which we evaluate the mobility. We validate our
approach by comparing to mobilities and conductivies obtained by the Boltzmann
transport equation (BTE) for different bulk and onedimensional systems. For
bulk silicon and gold we successfully compare against experimental values. We
discuss limitations and advantages of each of the computational approaches.

We present calculations of the inelastic vibrational signals in the
electrical current through a graphene nanoconstriction. We find that the
inelastic signals are only present when the Fermilevel position is tuned to
electron transmission resonances, thus, providing a fingerprint which can link
an electron transmission resonance to originate from the nanoconstriction. The
calculations are based on a novel firstprinciples method which includes the
phonon broadening due to coupling with phonons in the electrodes. We find that
the signals are modified due to the strong coupling to the electrodes, however,
still remain as robust fingerprints of the vibrations in the nanoconstriction.
We investigate the effect of including the full selfconsistent potential drop
due to finite bias and gate doping on the calculations and find this to be of
minor importance.

Metalsemiconductor contacts are a pillar of modern semiconductor technology.
Historically, their microscopic understanding has been hampered by the
inability of traditional analytical and numerical methods to fully capture the
complex physics governing their operating principles. Here we introduce an
atomistic approach based on density functional theory and nonequilibrium
Green's function, which includes all the relevant ingredients required to model
realistic metalsemiconductor interfaces and allows for a direct comparison
between theory and experiments via IV bias curves simulations. We apply this
method to characterize an Ag/Si interface relevant for photovoltaic
applications and study the rectifyingtoOhmic transition as function of the
semiconductor doping.We also demonstrate that the standard "Activation Energy"
method for the analysis of IV bias data might be inaccurate for nonideal
interfaces as it neglects electron tunneling, and that finitesize atomistic
models have problems in describing these interfaces in the presence of doping,
due to a poor representation of spacecharge effects. Conversely, the present
method deals effectively with both issues, thus representing a valid
alternative to conventional procedures for the accurate characterization of
metalsemiconductor interfaces.

We present density functional theory calculations of the phononlimited
mobility in ntype monolayer graphene, silicene and MoS$_2$. The material
properties, including the electronphonon interaction, are calculated from
firstprinciples. We provide a detailed description of the normalized fullband
relaxation time approximation for the linearized Boltzmann transport equation
(BTE) that includes inelastic scattering processes. The bulk electronphonon
coupling is evaluated by a supercell method. The method employed is fully
numerical and does therefore not require a semianalytic treatment of part of
the problem and, importantly, it keeps the anisotropy information stored in the
coupling as well as the band structure. In addition, we perform calculations of
the lowfield mobility and its dependence on carrier density and temperature to
obtain a better understanding of transport in graphene, silicene and monolayer
MoS$_2$. Unlike graphene, the carriers in silicene show strong interaction with
the outofplane modes. We find that graphene has more than an order of
magnitude higher mobility compared to silicene. For MoS$_2$, we obtain several
orders of magnitude lower mobilities in agreement with other recent theoretical
results. The simulations illustrate the predictive capabilities of the newly
implemented BTE solver applied in simulation tools based on firstprinciples
and localized basis sets.

We predict that unpolarized charge current injected into a ballistic thin
film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a
{\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface.
Furthermore, the nonequilibrium spin texture will extend into $\simeq 2$ nm
thick layer below the TI surfaces due to penetration of evanescent
wavefunctions from the metallic surfaces into the bulk of TI. Averaging
$\mathbf{S}(\mathbf{r})$ over few \AA{} along the longitudinal direction
defined by the current flow reveals large component pointing in the transverse
direction. In addition, we find an order of magnitude smaller outofplane
component when the direction of injected current with respect to Bi and Se
atoms probes the largest hexagonal warping of the Diraccone dispersion on TI
surface. Our analysis is based on an extension of the nonequilibrium Green
functions combined with density functional theory (NEGF+DFT) to situations
involving noncollinear spins and spinorbit coupling. We also demonstrate how
DFT calculations with properly optimized local orbital basis set can precisely
match putatively more accurate calculations with planewave basis set for the
supercell of Bi$_2$Se$_3$.

A method is presented for generating a good initial guess of a transition
path between given initial and final states of a system without evaluation of
the energy. An objective function surface is constructed using an interpolation
of pairwise distances at each discretization point along the path and the
nudged elastic band method then used to find an optimal path on this image
dependent pair potential (IDPP) surface. This provides an initial path for the
more computationally intensive calculations of the true minimum energy path
using some method of choice for evaluating the energy and atomic forces, for
example by ab initio or density functional theory. The optimal path on the IDPP
surface is significantly closer to the true minimum energy path than a linear
interpolation of the Cartesian coordinates and, therefore, reduces the number
of iterations needed to reach convergence and averts divergence in the
electronic structure calculations when atoms are brought too close to each
other in the initial path. The method is illustrated with three examples: (1)
rotation of a methyl group in an ethane molecule, (2) an exchange of atoms in
an island on a crystal surface, and (3) an exchange of two Siatoms in
amorphous silicon. In all three cases, the computational effort in finding the
minimum energy path with DFT was reduced by a factor ranging from 50 % to an
order of magnitude by using an IDPP path as the initial path. The time required
for parallel computations was reduced even more because of load imbalance when
linear interpolation of Cartesian coordinates was used.

We investigate the atomic and electronic structure of a single layer of
pentacene on the Au(111) surface using density functional theory. To find the
candidate structures we strain match the pentacene crystal geometry with the
Au(111) surface, in this way we find pentacene overlayer structures with a low
strain. We show that the geometries obtained with this approach has lower
energy than previous proposed surface geometries of pentacene on Au(111). We
also show that the geometry and workfunction of the obtained structures are in
excellent agreement with experimental data.

We simulate the electron transport across the Au(111)pentacene interface
using nonequilibrium Green's functions and densityfunctional theory
(NEGFDFT), and calculate the biasdependent electron transmission. We find
that the electrical contact resistance is dominated by the formation of a
Schottky barrier at the interface, and show that the conventional semiconductor
transport models across Schottky barriers need to be modified in order to
describe the simulation data. We present an extension of the conventional
Schottky barrier transport model, which can describe our simulation results and
rationalize recent experimental data.

We perform firstprinciples calculations of electron transport across a
nickelgraphene interface. Four different geometries are considered, where the
contact area, graphene and nickel surface orientations and the passivation of
the terminating graphene edge are varied. We find covalent bond formation
between the graphene layer and the nickel surface, in agreement with other
theoretical studies. We calculate the energydependent electron transmission
for the four systems and find that the systems have very similar edge contact
resistance, independent of the contact area between nickel and graphene, and in
excellent agreement with recent experimental data. A simple model where
graphene is bonded with a metal surface shows that the results are generic for
covalently bonded graphene, and the minimum attainable edge contact resistance
is twice the ideal edge quantum contact resistance of graphene.

We present a firstprinciples method for calculating the charging energy of a
molecular singleelectron transistor operating in the Coulomb blockade regime.
The properties of the molecule are modeled using densityfunctional theory, the
environment is described by a continuum model, and the interaction between the
molecule and the environment are included through the Poisson equation. The
model is used to calculate the charge stability diagrams of a benzene and
C$_{60}$ molecular singleelectron transistor.

We present a new semiempirical model for calculating electron transport in
atomicscale devices. The model is an extension of the Extended H\"uckel method
with a selfconsistent Hartree potential. This potential models the effect of
an external bias and corresponding charge rearrangements in the device. It is
also possible to include the effect of external gate potentials and continuum
dielectric regions in the device. The model is used to study the electron
transport through an organic molecule between gold surfaces, and it is
demonstrated that the results are in closer agreement with experiments than ab
initio approaches provide. In another example, we study the transition from
tunneling to thermionic emission in a transistor structure based on graphene
nanoribbons.

The Wave Function Matching (WFM) technique has recently been developed for
the calculation of electronic transport in quantum twoprobe systems. In terms
of efficiency it is comparable with the widely used Green's function approach.
The WFM formalism presented so far requires the evaluation of all the
propagating and evanescent bulk modes of the left and right electrodes in order
to obtain the correct coupling between device and electrode regions. In this
paper we will describe a modified WFM approach that allows for the exclusion of
the vast majority of the evanescent modes in all parts of the calculation. This
approach makes it feasible to apply iterative techniques to efficiently
determine the few required bulk modes, which allows for a significant reduction
of the computational expense of the WFM method. We illustrate the efficiency of
the method on a carbon nanotube fieldeffecttransistor (FET) device displaying
bandtoband tunneling and modeled within the semiempirical Extended H\"uckel
theory (EHT) framework.

We present an ab initio study of spin dependent transport in armchair carbon
nanotubes with transition metal adsorbates, iron or vanadium. We neglect the
effect of tube curvature and model the nanotube by graphene with periodic
boundary conditions. A density functional theory based nonequilibrium Green's
function method is used to compute the electronic structure and zerobias
conductance. The presence of the adsorbate causes a strong scattering of
electrons of one spin type only. The scattering is shown to be due to coupling
of the two armchair band states to the metal 3d orbitals with matching symmetry
causing Fano resonances appearing as dips in the transmission function. The
spin type (majority/minority) being scattered depends on the adsorbate and is
explained in terms of dstate filling. The results are qualitatively reproduced
using a simple tightbinding model, which is then used to investigate the
dependence of the transmission on the nanotube width. We find a decrease in the
width of the transmission dip as the tubesize increases.

We address the microscopic origin of the currentinduced forces by analyzing
results of first principles density functional calculations of atomic gold
wires connected to two gold electrodes with different electrochemical
potentials. We find that current induced forces are closely related to the
chemical bonding, and arise from the rearrangement of bond charge due to the
current flow. We explain the current induced bond weakening/strengthening by
introducing bond charges decomposed into electrode components.

We report firstprinciples studies of electronic transport in monolayers of
Tour wires functionalized with different side groups. An analysis of the
scattering states and transmission eigenchannels suggests that the
functionalization does not strongly affect the resonances responsible for
current flow through the monolayer. However, functionalization has a
significant effect on the interactions within the monolayer, so that monolayers
with NO$_2$ side groups exhibit local minima associated with twisted
conformations of the molecules. We use our results to interpret observations of
negative differential resistance and molecular memory in monolayers of NO$_2$
functionalized molecules in terms of a twisting of the central ring induced by
an applied bias potential.

We describe an ab initio method for calculating the electronic structure,
electronic transport, and forces acting on the atoms, for atomic scale systems
connected to semiinfinite electrodes and with an applied voltage bias. Our
method is based on the density functional theory (DFT) as implemented in the
well tested Siesta approach (which uses nonlocal normconserving
pseudopotentials to describe the effect of the core electrons, and linear
combination of finiterange numerical atomic orbitals to describe the valence
states). We fully deal with the atomistic structure of the whole system,
treating both the contact and the electrodes on the same footing. The effect of
the finite bias (including selfconsistency and the solution of the
electrostatic problem) is taken into account using nonequilibrium Green's
functions. We relate the nonequilibrium Green's function expressions to the
more transparent scheme involving the scattering states. As an illustration,
the method is applied to three systems where we are able to compare our results
to earlier ab initio DFT calculations or experiments, and we point out
differences between this method and existing schemes. The systems considered
are: (1) single atom carbon wires connected to aluminum electrodes with
extended or finite cross section, (2) single atom gold wires, and finally (3)
large carbon nanotube systems with point defects.

We present a high voltage extension of the TersoffHamann theory of STM
images, which includes the effect of the electric field between the tip and the
sample. The theoretical model is based on first principles electronic structure
calculations and has no adjustable parameters. We use the method to calculate
theoretical STM images of the monohydrate Si(100)H(2$\times$1) surface with
missing hydrogen defects at $ 2$~V and find an enhanced corrugation due to the
electric field, in good agreement with experimental images.