• We report details of single crystal growth of stoichiometric bismuthide PtBi$_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of $a$=$b$=6.553$\AA$, $c$=6.165$\AA$. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The $T$-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor $\beta$-PdBi$_2$.
  • We report an investigation of the superconducting order parameter of the noncentrosymmetric compound PbTaSe$_2$, which is believed to have a topologically nontrivial band structure. Precise measurements of the London penetration depth $\Delta\lambda(T)$ obtained using a tunnel diode oscillator (TDO) based method show an exponential temperature dependence at $T\ll T_c$, suggesting a nodeless superconducting gap structure. A single band s-wave model well describes the corresponding normalized superfluid density, with a gap magnitude of $\Delta(0)=1.85T_c$. This is very close to the value of $1.76T_c$ for weak-coupling BCS superconductors, indicating conventional fully-gapped superconductivity in PbTaSe$_2$.