
Two classes of topological superconductors and Majorana modes in condensed
matter systems are known to date: one, in which impurity disorder strongly
suppresses topological superconducting gap and is detrimental to Majorana
modes, and the other, where Majorana fermions are protected by disorderrobust
superconductor gap. In this work we predict a third class of topological
superconductivity and Majorana modes, in which they appear exclusively in the
presence of impurity disorder. Observation and control of Majorana fermions and
other nonAbelions often requires a symmetry leading to a gap in a
singleparticle spectra. Disorder introduces states into the gap and enables
conductance and proximityinduced superconductivity via the ingap states. We
show that disorderenabled topological superconductivity can be realized in a
quantum Hall ferromagnet, when helical domain walls are coupled to an swave
superconductor. Solving a general quantum mechanical problem of impurity bound
states in a system of spinorbit coupled Landau levels, we show that
disorderinduced Majorana modes emerge in a setting of the quantum Hall
ferromagnetic transition in a CdMnTe quantum wells at a filling factor $\nu=2$.
Recent experiments on transport through electrostatically controlled single
domain wall in this system indicated the vital role of disorder in conductance,
but left an unresolved question whether this could intrinsically preclude
generation of Majorana fermions. The proposed resolution of the problem,
demonstrating emergence of Majorana fermions exclusively due to impurity
disorder, opens a path forward. We show that electrostatic control of domain
walls in an integer quantum Hall ferromagnet allows manipulation of Majorana
modes. Similar physics can emerge for ferromagnetic transitions in the
fractional quantum Hall regime leading to the formation and control of higher
order nonAbelian excitations.

We report drastically different onset temperatures of the reentrant integer
quantum Hall states in the second and third Landau level. This finding is in
quantitative disagreement with the HartreeFock theory of the bubble phases
which is thought to describe these reentrant states. Our results indicate that
the number of electrons per bubble in either the second or the third Landau
level is likely different than predicted.

We use spatial spin separation by a magnetic focusing technique to probe the
polarization of quantum point contacts. The point contacts are fabricated from
ptype GaAs/AlGaAs heterostructures. A finite polarization is measured in the
lowdensity regime, when the conductance of a point contact is tuned to
<2e^2/h. Polarization is stronger in samples with a well defined ``0.7
structure''

Charged carriers with different spin states are spatially separated in a
twodimensional hole gas. Due to strong spinorbit interaction holes at the
Fermi energy have different momenta for two possible spin states travelling in
the same direction and, correspondingly, different cyclotron orbits in a weak
magnetic field. Two point contacts, acting as a monochromatic source of
ballistic holes and a narrow detector in the magnetic focusing geometry are
demonstrated to work as a tunable spin filter.

Recently developed AFM local anodic oxidation (LAO) technique offers a
convenient way of patterning nanodevices, but imposes even more stringent
requirements on the underlying quantum well structure. We developed a new very
shallow quantum well design which allows the depth and density of the 2D gas to
be independently controlled during the growth. A high mobility (0.5 10^6
cm^2/Vs at 4.2 K) 2D hole gas just 350A below the surface is demonstrated. A
quantum point contact, fabricated by AFM LAO nanopatterning from this wafer,
shows 9 quantum steps at 50 mK.

We show that the coherence of charge transfer through a weakly coupled
doubledot dimer can be determined by analyzing the statistics of the
conductance pattern, and does not require large phase coherence length in the
host material. We present an experimental study of the charge transport through
a small Si nanostructure, which contains two quantum dots. The transport
through the dimer is shown to be coherent. At the same time, one of the dots is
strongly coupled to the leads, and the overall transport is dominated by
inelastic cotunneling processes.

We report unexpected fluctuations in the positions of Coulomb blockade peaks
at high magnetic fields in a small Si quantum dot. The fluctuations have a
distinctive sawtooth pattern: as a function of magnetic field, linear shifts
of peak positions are compensated by abrupt jumps in the opposite direction.
The linear shifts have large slopes, suggesting formation of the ground state
with a nonzero angular momentum. The value of the momentum is found to be well
defined, despite the absence of the rotational symmetry in the dot.

We have studied the magnetic field dependence of the ground state energies in
a small Si quantum dot. At low fields the first five electrons are added in a
spinup  spindown sequence minimizing the total spin. This sequence does not
hold for larger number of electrons in the dot. At high fields the dot
undergoes transitions between states with different spins driven entirely by
Zeeman energy. We identify some features that can be attributed to transitions
between different spin configurations preserving the total spin of the dot. For
a few peaks we observed large linear shifts that correspond to the change of
the spin of the dot by 3/2. Such a change requires that an electron in the dot
flips its spin during every tunneling event.

We studied transport through ultrasmall Si quantum dot transistors
fabricated from silicononinsulator wafers. At high temperatures, 4K<T<100K,
the devices show singleelectron or singlehole transport through the
lithographically defined dot. At T<4K, current through the devices is
characterized by multidot transport. From the analysis of the transport in
samples with doubledot characteristics, we conclude that extra dots are formed
inside the thermally grown gate oxide which surrounds the lithographically
defined dot.

We have studied lowtemperature single electron transport through ultrasmall
Si quantum dots. We find that at low temperatures Coulomb blockade is partially
lifted at certain gate voltages. Furthermore, we observed an enhancement of
differential conductance at zero bias. The magnetic field dependence of this
zero bias anomaly is very different from the one reported in GaAs quantum dots,
inconsistent with predictions for the Kondo effect.