We report the production and characterization of a form of amorphous carbon films with sp/sp2 hybridization (atomic fraction of sp hybridized species > 20%) where the predominant sp bonding appears to be (=C=C=)n cumulene. Vibrational and electronic properties have been studied by in situ Raman spectroscopy and electrical conductivity measurements. Cumulenic chains are substantially stable for temperatures lower than 250 K and they influence the electrical transport properties of the sp/sp2 carbon through a self-doping mechanism by pinning the Fermi level closer to one of the mobility gap edges. Upon heating above 250 K the cumulenic species decay to form graphitic nanodomains embedded in the sp2 amorphous matrix thus reducing the activation energy of the material. This is the first example of a pure carbon system where the sp hybridization influences bulk properties.
In this contribution, the production of defects in radiation fields and their evolution toward equilibrium in silicon for detector uses has been modelled. In the quantitative model developed, the generation rate of primary defects is calculated starting from the projectile - silicon interaction and from recoil energy redistribution in the lattice. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are considered. The results of the model support the experimental available data. The correlation between the initial material parameters, temperature, irradiation and annealing history is established. The model predictions could be a useful clue in obtaining harder materials for detectors at the new generation of accelerators or for space missions.