We report measurements of the gate-bias dependent band alignment, especially
the confining potential profile, at the conducting LaAlO3/SrTiO3 (001)
heterointerface using soft and hard x-ray photoemission spectroscopy.
Depth-profiling analysis reveals that a significant potential drop on the
SrTiO3 side of the interface occurs within ~2 nm of the interface under
negative gate bias voltage. These results demonstrate gate control of the
collapse of permittivity at the interface, and explain the dramatic loss of
electron mobility with back-gate depletion.
We report the operation of LaAlO_3 / SrTiO_3 depletion mode top-gated
junction field-effect transistors using a range of LaAlO_3 thicknesses as the
top gate insulator. Gated Hall bars show near ideal transistor characteristics
at room temperature with on-off ratios greater than 1000. Lower temperature
measurements demonstrate a systematic increase in the Hall mobility as the
sheet carrier density in the channel is depleted via the top gate, providing a
route to higher mobility, lower density electron gases in this system.
The electronic symmetry of the SrTiO3/LaAlO3 interface was investigated by
optical second harmonic generation, using superlattices with varying
periodicity to study the evolution of the electronic reconstruction while
avoiding substrate contributions. The superlattices show large perpendicular
optical nonlinearity, which abruptly increases when the sublattice thickness
goes above 3 unit cells, revealing substantial effects of the polar-nonpolar
interface. The nonlinear 'active' area is primarily in SrTiO3, develops with
increasing thickness, and extends up to 8 unit cells from the interface.