• Spin-lattice relaxation of the nuclear spin system in p-type GaAs is studied using a three-stage experimental protocol including optical pumping and measuring the difference of the nuclear spin polarization before and after a dark interval of variable length. This method allows us to measure the spin-lattice relaxation time $T_1$ of optically pumped nuclei "in the dark", that is, in the absence of illumination. The measured $T_1$ values fall into the sub-second time range, being three orders of magnitude shorter than in earlier studied n-type GaAs. The drastic difference is further emphasized by magnetic-field and temperature dependences of $T_1$ in p-GaAs, showing no similarity to those in n-GaAs. This unexpected behavior is explained within a developed theoretical model involving quadrupole relaxation of nuclear spins, which is induced by electric fields within closely spaced donor-acceptor pairs.
  • The dynamic polarization of nuclear spins by photoexcited electrons is studied in a GaAs/AlGaAs quantum well of $d=19.7\thinspace\text{nm}$ width. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei due to a low leakage of spin out of the polarized nuclear system, because mechanisms of spin-lattice relaxation other than hyperfine interaction are strongly suppressed. A key ingredient to that end is a low defect concentration inside the heterostructure, while defects in the surrounding become suppressed through illumination by which the spin relaxation time is increased compared to keeping the system in the dark. This finding indicates a clear strategy for obtaining a high nuclear spin polarization as required for using confined carrier spins in quantum technologies.
  • Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic field. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to drive nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to micro and nanostructures.
  • We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, that governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping can be studied and harnessed in much simpler model environment of n-GaAs bulk crystal.
  • We study the photoionization of argon atoms close to the 3s$^2$3p$^6$ $\rightarrow$ 3s$^1$3p$^6$4p $\leftrightarrow$ 3s$^2$3p$^5$ $\varepsilon \ell$, $\ell$=s,d Fano window resonance. An interferometric technique using an attosecond pulse train, i.e. a frequency comb in the extreme ultraviolet range, and a weak infrared probe field allows us to study both amplitude and phase of the photoionization probability amplitude as a function of photon energy. A theoretical calculation of the ionization process accounting for several continuum channels and bandwidth effects reproduces well the experimental observations and shows that the phase variation of the resonant two-photon amplitude depends on the interaction between the channels involved in the autoionization process.