Chemically ordered B2 FeRh exhibits a remarkable
antiferromagnetic-ferromagnetic phase transition that is first order. It thus
shows phase coexistence, usually by proceeding though nucleation at random
defect sites followed by propagation of phase boundary domain walls. The
transition occurs at a temperature that can be varied by doping other metals
onto the Rh site. We have taken advantage of this to yield control over the
transition process by preparing an epilayer with oppositely directed doping
gradients of Pd and Ir throughout its height, yielding a gradual transition
that occurs between 350~K and 500~K. As the sample is heated, a horizontal
antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up
through the layer, its position controlled by the temperature. This mobile
magnetic domain wall affects the magnetisation and resistivity of the layer in
a way that can be controlled, and hence exploited, for novel device
applications.