
We present a planar qubit design based on a superconducting circuit that we
call concentric transmon. While employing a straightforward fabrication process
using Al evaporation and liftoff lithography, we observe qubit lifetimes and
coherence times in the order of 10us. We systematically characterize loss
channels such as incoherent dielectric loss, Purcell decay and radiative
losses. The implementation of a gradiometric SQUID loop allows for a fast
tuning of the qubit transition frequency and therefore for full tomographic
control of the quantum circuit. Due to the large loop size, the presented qubit
architecture features a strongly increased magnetic dipole moment as compared
to conventional transmon designs. This renders the concentric transmon a
promising candidate to establish a siteselective passive direct Z coupling
between neighboring qubits, being a pending quest in the field of quantum
simulation.

We present a method for detecting electromagnetic (EM) modes that couple to a
superconducting qubit in a circuitQED architecture. Based on
measurementinduced dephasing, this technique allows the measurement of modes
that have a high quality factor (Q) and may be difficult to detect through
standard transmission and reflection measurements at the device ports. In this
scheme the qubit itself acts as a sensitive phase meter, revealing modes that
couple to it through measurements of its coherence time. Such modes are
indistinguishable from EM modes that do not couple to the qubit using a vector
network analyzer. Moreover, this technique provides useful characterization
parameters including the quality factor and the coupling strength of the
unwanted resonances. We demonstrate the method for detecting both highQ
coupling resonators in planar devices as well as spurious modes produced by a
3D cavity.

The resonatorinduced phase (RIP) gate is a multiqubit entangling gate that
allows a high degree of flexibility in qubit frequencies, making it attractive
for quantum operations in largescale architectures. We experimentally realize
the RIP gate with four superconducting qubits in a threedimensional (3D)
circuitquantum electrodynamics architecture, demonstrating highfidelity
controlledZ (CZ) gates between all possible pairs of qubits from two different
4qubit devices in pair subspaces. These qubits are arranged within a wide
range of frequency detunings, up to as large as 1.8 GHz. We further show a
dynamical multiqubit refocusing scheme in order to isolate out 2qubit
interactions, and combine them to generate a fourqubit
GreenbergerHorneZeilinger state.

We have designed, fabricated and tested a frequencytunable highQ
superconducting resonator made from a niobium titanium nitride film. The
frequency tunability is achieved by injecting a DC current through a
currentdirecting circuit into the nonlinear inductor whose kinetic inductance
is currentdependent. We have demonstrated continuous tuning of the resonance
frequency in a 180 MHz frequency range around 4.5 GHz while maintaining the
high internal quality factor $Q_i> 180,000$. This device may serve as a tunable
filter and find applications in superconducting quantum computing and
measurement. It also provides a useful tool to study the nonlinear response of
a superconductor. In addition, it may be developed into techniques for
measurement of the complex impedance of a superconductor at its transition
temperature and for readout of transitionedge sensors.

We present a superconducting qubit design that is fabricated in a 2D geometry
over a superconducting ground plane to enhance the lifetime. The qubit is
coupled to a microstrip resonator for readout. The circuit is fabricated on a
silicon substrate using low loss, stoichiometric titanium nitride for capacitor
pads and small, shadowevaporated aluminum/aluminumoxide junctions. We observe
qubit relaxation and coherence times ($T_1$ and $T_2$) of 11.7 $\pm$ 0.2 $\mu$s
and 8.7 $\pm$ 0.3 $\mu$s, respectively. Calculations show that the proximity of
the superconducting plane suppresses the otherwise high radiation loss of the
qubit. A significant increase in $T_1$ is projected for a reduced
qubittosuperconducting plane separation.

We apply the superconducting proximity effect in TiN/Ti multilayer films to
tune the critical temperature, Tc, to within 10 mK with high uniformity (less
than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from
0.8  2.5 K. These films had high resistivities, > 100 uOhmcm and internal
quality factors for resonators in the GHz range on the order of 100k and
higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were
prepared, demonstrating a highly controlled process for films over a wide
thickness range. Detectors were fabricated and showed single photon resolution
at 1550 nm. The high uniformity and controllability coupled with the high
quality factor, kinetic inductance, and inertness of TiN make these films ideal
for use in frequency multiplexed kinetic inductance detectors and other
potential applications such as nanowire detectors, transition edge sensors and
associated quantum information applications.

The structural and electrical properties of TiN films deposited by reactive
sputtering depend on their growth parameters, in particular the Ar:N2 gas
ratio. We show that the nitrogen percentage changes the crystallographic phase
of the film progressively from pure \alphaTi, through an \alphaTi phase with
interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric
TiNX to stoichiometric TiN. These changes also affect the superconducting
transition temperature, Tc, allowing, the superconducting properties to be
tailored for specific applications. After decreasing from a Tc of 0.4 K for
pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up
to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp
increase of Tc makes it difficult to control the properties of the film from
wafertowafer as well as across a given wafer to within acceptable margins for
device fabrication. Here we show that the nitrogen composition and hence the
superconductive properties are related to, and can be determined by,
spectroscopic ellipsometry. Therefore, this technique may be used for process
control and wafer screening prior to investing time in processing devices.

We have investigated the correlation between the microwave loss and
patterning method for coplanar waveguide titanium nitride resonators fabricated
on Si wafers. Three different methods were investigated: fluorine and
chlorinebased reactive ion etches and an argonion mill. At high microwave
probe powers the reactive etched resonators showed low internal loss, whereas
the ionmilled samples showed dramatically higher loss. At singlephoton powers
we found that the fluorineetched resonators exhibited substantially lower loss
than the chlorineetched ones. We interpret the results by use of numerically
calculated filling factors and find that the silicon surface exhibits a higher
loss when chlorineetched than when fluorineetched. We also find from
microscopy that redeposition of silicon onto the photoresist and side walls is
the probable cause for the high loss observed for the ionmilled resonators

A quantum coherent interface between optical and microwave photons can be
used as a basic building block within a future quantum information network. The
interface is envisioned as an ensemble of rareearth ions coupled to a
superconducting resonator, allowing for coherent transfer between optical and
microwave photons. Towards this end, we have realized a hybrid device coupling
a Er$^{3+}$ doped Y$_2$SiO$_5$ crystal in a superconducting coplanar waveguide
cavity. We observe a collective spin coupling of 4 MHz and a spin linewdith of
down to 75 MHz.