
The behavior of matter near a quantum critical point (QCP) is one of the most
exciting and challenging areas of physics research. Emergent phenomena such as
hightemperature superconductivity are linked to the proximity to a QCP.
Although significant progress has been made in understanding quantum critical
behavior in some low dimensional magnetic insulators, the situation in metallic
systems is much less clear. Here we demonstrate that NiCoCrx single crystal
alloys are remarkable model systems for investigating QCP physics in a metallic
environment. For NiCoCrx alloys with x = 0.8, the critical exponents associated
with a ferromagnetic quantum critical point (FQCP) are experimentally
determined from low temperature magnetization and heat capacity measurements.
For the first time, all of the five critical exponents ( gammasubT =1/2 ,
betasubT = 1, delta = 3/2, nuzsubm = 2, alphabarsubT = 0) are in remarkable
agreement with predictions of BelitzKirkpatrickVojta (BKV) theory in the
asymptotic limit of high disorder. Using these critical exponents, excellent
scaling of the magnetization data is demonstrated with no adjustable
parameters. We also find a divergence of the magnetic Gruneisen parameter,
consistent with a FQCP. This work therefore demonstrates that entropy
stabilized concentrated solid solutions represent a unique platform to study
quantum critical behavior in a highly tunable class of materials.

In pulsed magnetic fields up to 65T and at temperatures below the N\'eel
transition, our magnetization and magnetostriction measurements reveal a
fieldinduced metamagneticlike transition that is suggestive of an
antiferromagnetic to polarized paramagnetic or ferrimagnetic ordering. Our data
also suggests a change in the nature of this metamagneticlike transition from
second to firstorderlike near a tricritical point at T_{tc} ~145K and
H_{c}~52T. At high fields for H>H_{c} we found a decreased magnetic moment
roughly half of the moment reported in low field measurements. We propose that
\mathit{fp} hybridization effects and magnetoelastic interactions drive the
decreased moment, lack of saturation at high fields, and the decreased phase
boundary.

We use neutron scattering to compare the magnetic excitations in the hidden
order (HO) and antiferromagnetic (AFM) phases in URu2xFexSi2 as a function of
Fe concentration. The magnetic excitation spectra change significantly between
x = 0.05 and x = 0.10, following the enhancement of the AFM ordered moment, in
good analogy to the behavior of the parent compound under applied pressure.
Prominent latticecommensurate lowenergy excitations characteristic of the HO
phase vanish in the AFM phase. The magnetic scattering is dominated by strong
excitations along the Brillouin zone edges, underscoring the important role of
electron hybridization to both HO and AFM phases, and the similarity of the
underlying electronic structure. The stability of the AFM phase is correlated
with enhanced localitinerant electron hybridization.

The kagome lattice  a twodimensional (2D) arrangement of cornersharing
triangles  is at the forefront of the search for exotic states generated by
magnetic frustration. Such states have been observed experimentally for
Heisenberg and planar spins. In contrast, frustration of Ising spins on the
kagome lattice has previously been restricted to nanofabricated systems and
spinice materials under applied magnetic field. Here, we show that the layered
Ising magnet Dy3Mg2Sb3O14 hosts an emergent order predicted theoretically for
individual kagome layers of inplane Ising spins. Neutronscattering and bulk
thermomagnetic measurements, supported by Monte Carlo simulations, reveal a
phase transition at T* = 0.3 K from a disordered spinice like regime to an
"emergent charge ordered" state in which emergent charge degrees of freedom
exhibit threedimensional order while spins remain partially disordered. Our
results establish Dy3Mg2Sb3O14 as a tuneable system to study interacting
emergent charges arising from kagome Ising frustration.

Resonant xray emission spectroscopy (RXES) was used to determine the
pressure dependence of the felectron occupancy in the Kondo insulator SmB6.
Applied pressure reduces the foccupancy, but surprisingly, the material
maintains a significant divalent character up to a pressure of at least 35 GPa.
Thus, the closure of the resistive activation energy gap and onset of magnetic
order are not driven by stabilization of an integer valent state. Over the
entire pressure range, the material maintains a remarkably stable intermediate
valence that can in principle support a nontrivial band structure.

Since the discovery of spin glasses in dilute magnetic systems, their study
has been largely focused on understanding randomness and defects as the driving
mechanism. The same paradigm has also been applied to explain glassy states
found in dense frustrated systems. Recently, however, it has been theoretically
suggested that different mechanisms, such as quantum fluctuations and
topological features, may induce glassy states in defectfree spin systems, far
from the conventional dilute limit. Here we report experimental evidence for
the existence of a glassy state, that we call a spin jam, in the vicinity of
the clean limit of a frustrated magnet, which is insensitive to a low
concentration of defects. We have studied the effect of impurities on
SrCr9pGa129pO19 (SCGO(p)), a highly frustrated magnet, in which the magnetic
Cr3+ (s=3/2) ions form a quasitwodimensional triangular system of
bipyramids. Our experimental data shows that as the nonmagnetic Ga3+ impurity
concentration is changed, there are two distinct phases of glassiness: a
distinct exotic glassy state, which we call a "spin jam", for high magnetic
concentration region (p>0.8) and a cluster spin glass for lower magnetic
concentration, (p<0.8). This observation indicates that a spin jam is a unique
vantage point from which the class of glassy states in dense frustrated magnets
can be understood.

The low temperature hidden order state of URu$_2$Si$_2$ has long been a
subject of intense speculation, and is thought to represent an as yet
undetermined manybody quantum state not realized by other known materials.
Here, Xray absorption spectroscopy (XAS) and high resolution resonant
inelastic Xray scattering (RIXS) are used to observe electronic excitation
spectra of URu$_2$Si$_2$, as a means to identify the degrees of freedom
available to constitute the hidden order wavefunction. Excitations are shown to
have symmetries that derive from a correlated $5f^2$ atomic multiplet basis
that is modified by itinerancy. The features, amplitude and temperature
dependence of linear dichroism are in agreement with ground states that closely
resemble the doublet $\Gamma_5$ crystal field state of uranium.

We measure gatetuned thermoelectric power of mechanically exfoliated Bi2Se3
thin films in the topological insulator regime. The sign of the thermoelectric
power changes across the charge neutrality point as the majority carrier type
switches from electron to hole, consistent with the ambipolar electric field
effect observed in conductivity and Hall effect measurements. Near charge
neutrality point and at low temperatures, the gate dependent thermoelectric
power follows the semiclassical Mott relation using the expected surface state
density of states, but is larger than expected at high electron doping,
possibly reflecting a large density of states in the bulk gap. The
thermoelectric power factor shows significant enhancement near the
electronhole puddle carrier density ~ 0.5 x 1012 cm2 per surface at all
temperatures. Together with the expected reduction of lattice thermal
conductivity in low dimensional structures, the results demonstrate that
nanostructuring and Fermi level tuning of three dimensional topological
insulators can be promising routes to realize efficient thermoelectric devices.

We experimentally investigate the symmetry in the Hidden Order (HO) phase of
intermetallic URu2Si2 by mapping the lattice and magnetic excitations via
inelastic neutron and xray scattering measurements in the HO and
hightemperature paramagnetic phases. At all temperatures the excitations
respect the zone edges of the bodycentered tetragonal paramagnetic phase,
showing no signs of reduced spatial symmetry, even in the HO phase. The
magnetic excitations originate from transitions between hybridized bands and
track the Fermi surface, whose feature are corroborated by the phonon
measurements. Due to a large hybridization energy scale, a full uranium moment
persists in the HO phase, consistent with a lack of observed
crystalfieldsplit states. Our results are inconsistent with local order
parameter models and the behavior of typical density waves. We suggest that an
order parameter that does not break spatial symmetry would naturally explain
these characteristics.

We report on electronic transport measurements of dualgated nanodevices of
the lowcarrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all
devices the upper and lower surface states are independently tunable to the
Dirac point by the top and bottom gate electrodes. In thin devices, electric
fields are found to penetrate through the bulk, indicating finite capacitive
coupling between the surface states. A charging model allows us to use the
penetrating electric field as a measurement of the intersurface capacitance
$C_{TI}$ and the surface state energydensity relationship $\mu$(n), which is
found to be consistent with independent ARPES measurements. At high magnetic
fields, increased field penetration through the surface states is observed,
strongly suggestive of the opening of a surface state band gap due to broken
timereversal symmetry.

The twodimensional (2D) surface state of the threedimensional strong
topological insulator (STI) is fundamentally distinct from other 2D electron
systems in that the Fermi arc encircles an odd number of Dirac points. The TI
surface is in the symplectic universality class and uniquely among 2D systems
remains metallic and cannot be localized by (timereversal symmetric) disorder.
However, in finitesize samples intersurface coupling can destroy the
topological protection. The question arises: At what size can a thin TI sample
be treated as having decoupled topological surface states? We show that weak
antilocalization(WAL) is extraordinarily sensitive to submeV coupling between
top and bottom topological surfaces, and the surfaces of a TI film may be
coherently coupled even for thicknesses as large as 12 nm. For thicker films we
observe the signature of a true 2D topological metal: perfect weak
antilocalization in quantitative agreement with two decoupled surfaces in the
symplectic symmetry class.

We measure the temperaturedependent carrier density and resistivity of the
topological surface state of thin exfoliated Bi2Se3 in the absence of bulk
conduction. When the gatetuned chemical potential is near or below the Dirac
point the carrier density is strongly temperature dependent reflecting thermal
activation from the nearby bulk valence band, while above the Dirac point,
unipolar ntype surface conduction is observed with negligible thermal
activation of bulk carriers. In this regime linear resistivity vs. temperature
reflects intrinsic electronacoustic phonon scattering. Quantitative comparison
with a theoretical transport calculation including both phonon and disorder
effects gives the ratio of deformation potential to Fermi velocity D/\hbarvF =
4.7 {\AA}1. This strong phonon scattering in the Bi2Se3 surface state gives
intrinsic limits for the conductivity and charge carrier mobility at room
temperature of ~550 {\mu}S per surface and ~10,000 cm2/Vs.

The newlydiscovered threedimensional strong topological insulators (STIs)
exhibit topologicallyprotected Dirac surface states. While the STI surface
state has been studied spectroscopically by e.g. photoemission and scanned
probes, transport experiments have failed to demonstrate the most fundamental
signature of the STI: ambipolar metallic electronic transport in the
topological surface of an insulating bulk. Here we show that the surfaces of
thin (<10 nm), lowdoped Bi2Se3 (\approx10^17/cm3) crystals are strongly
electrostatically coupled, and a gate electrode can completely remove bulk
charge carriers and bring both surfaces through the Dirac point simultaneously.
We observe clear surface band conduction with linear Hall resistivity and
welldefined ambipolar field effect, as well as a chargeinhomogeneous minimum
conductivity region. A theory of charge disorder in a Dirac band explains well
both the magnitude and the variation with disorder strength of the minimum
conductivity (2 to 5 e^2/h per surface) and the residual (puddle) carrier
density (0.4 x 10^12 cm^2 to 4 x 10^12 cm^2). From the measured carrier
mobilities 320 cm^2/Vs to 1,500 cm^2/Vs, the charged impurity densities 0.5 x
10^13 cm^2 to 2.3 x 10^13 cm^2 are inferred. They are of a similar magnitude
to the measured doping levels at zero gate voltage (1 x 10^13 cm^2 to 3 x
10^13 cm^2), identifying dopants as the charged impurities.

Ultrathin (~3 quintuple layer) fieldeffect transistors (FETs) of topological
insulator Bi2Se3 are prepared by mechanical exfoliation on 300nm SiO2/Si
susbtrates. Temperature and gatevoltage dependent conductance measurements
show that ultrathin Bi2Se3 FETs are ntype, and have a clear OFF state at
negative gate voltage, with activated temperaturedependent conductance and
energy barriers up to 250 meV.

Thin (67 quintuple layer) topological insulator Bi2Se3 quantum dot devices
are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to
realize semiconducting barriers which may be tuned from Ohmic to tunneling
conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with
large charging energy >5 meV, with additional features implying excited states.

The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivity
below a critical temperature T_c = 0.77 K with a zerotemperature upper
critical field H_c2(0) = 1.5 T. Magnetoresistance and Hall measurements support
theoretical predictions that this material is a topologically nontrivial
semimetal having a surprisingly low positive charge carrier density of 2 x
10^18 cm^3. Unconventional linear magnetoresistance and beating in
Shubnikovde Haas oscillations point to spinorbit split Fermi surfaces. The
sensitivity of magnetoresistance to surface roughness suggests a possible
contribution from surface states. The combination of noncentrosymmetry and
strong spinorbit coupling in YPtBi presents a promising platform for the
investigation of topological superconductivity.

Fe1+xTe0.5Se0.5 is the archetypical ironbased superconductor. Here we show
that the superconducting state is controlled by the stacking of its antiPbO
layers, such that homogeneous ordering hinders superconductivity and the
highest volume fractions are observed in phase separated structures as
evidenced by either a distribution of lattice parameters or microstrain.

Nitrogen gas accidentally sealed in a sample container produces various
spurious effects in elastic neutron scattering measurements. These effects are
systematically investigated and the details of the spurious scattering are
presented.

Superconductivity has been explored in single crystals of the Nidoped
FeAscompound SrFe2xNixAs2 grown by selfflux solution method. The
antiferromagnetic order associated with the magnetostructural transition of the
parent compound SrFe2As2 is gradually suppressed with increasing Ni
concentration x and bulkphase superconductivity with full diamagnetic
screening is induced near the optimal doping of x = 0.15 with a maximum
transition temperature Tc ~9.8 K. An investigation of hightemperature
annealing on asgrown samples indicate that the heat treatment can enhance Tc
as much as ~50 %.

The onset of antiferromagnetic order in URu2Si2 has been studied via neutron
diffraction in a helium pressure medium, which most closely approximates
hydrostatic conditions. The antiferromagnetic critical pressure is 0.80 GPa,
considerably higher than values previously reported. Complementary electrical
resistivity measurements imply that the hidden orderantiferromagnetic
bicritical point far exceeds 1.02 GPa. Moreover, the redefined
pressuretemperature phase diagram suggests that the superconducting and
antiferromagnetic phase boundaries actually meet at a common critical pressure
at zero temperature.

We have systematically investigated the doping and the directional dependence
of the gap structure in the 122type iron pnictide superconductors by point
contact Andreev reflection spectroscopy. The studies were performed on single
crystals of Ba1xKxFe2As2 (x = 0.29, 0.49, and 0.77) and SrFe1.74Co0.26As2 with
a sharp tip of Pb or Au pressed along the caxis or the abplane direction. The
conductance spectra obtained on highly transparent contacts clearly show
evidence of a robust superconducting gap. The normalized curves can be well
described by the BlonderTinkhamKlapwijk model with a lifetime broadening. The
determined gap value scales very well with the transition temperature, giving
the 2{\Delta}/kBTC value of ~ 3.1. The results suggest the presence of a
universal coupling behavior in this class of iron pnictides over a broad doping
range and independent of the sign of the doping. Moreover, conductance spectra
obtained on caxis junctions and abplane junctions indicate that the observed
gap is isotropic in these superconductors.

The effect of alkaline earth substitution on structural parameters was
studied in highquality single crystals of Ba(1x)Sr(x)Fe2As2 and
Sr(1x)Ca(x)Fe2As2 grown by the selfflux method. The results of singlecrystal
and powder xray diffraction measurements suggest a continuous monotonic
decrease of both a and caxis lattice parameters, the c/a tetragonal ratio,
and the unit cell volume with decreasing alkaline earth atomic radius as
expected by Vegard's law. As a result, the system experiences a continuously
increasing chemical pressure effect in traversing the phase diagram from x=0 in
Ba(1x)Sr(x)Fe2As2 to x=1 in Sr(1x)Ca(x)Fe2As2.

While evidence of a topologically nontrivial surface state has been
identified in surfacesensitive measurements of Bi2Se3, a significant
experimental concern is that no signatures have been observed in bulk
transport. In a search for such states, nominally undoped single crystals of
Bi2Se3 with carrier densities approaching 10^16 cm^3 and very high mobilities
exceeding 2 m^2 V^1 s^1 have been studied. A comprehensive analysis of
Shubnikov de Haas oscillations, Hall effect, and optical reflectivity indicates
that the measured electrical transport can be attributed solely to bulk states,
even at 50 mK at low Landau level filling factor, and in the quantum limit. The
absence of a significant surface contribution to bulk conduction demonstrates
that even in very clean samples, the surface mobility is lower than that of the
bulk, despite its topological protection.

Substitution of Re for Ru in the heavy fermion compound URu2Si2 suppresses
the hidden order transition and gives rise to ferromagnetism at higher
concentrations. The hidden order transition of URu(2x)Re(x)Si2, tracked via
specific heat and electrical resistivity measurements, decreases in temperature
and broadens, and is no longer observed for x>0.1. A critical scaling analysis
of the bulk magnetization indicates that the ferromagnetic ordering temperature
and ordered moment are suppressed continuously towards zero at a critical
concentration of x = 0.15, accompanied by the additional suppression of the
critical exponents gamma and (delta1) towards zero. This unusual trend appears
to reflect the underlying interplay between Kondo and ferromagnetic
interactions, and perhaps the proximity of the hidden order phase.

Magnetic critical scaling in URu2xRexSi2 single crystals continuously
evolves as the ferromagnetic critical temperature is tuned towards zero via
chemical substitution. As the quantum phase transition is approached, the
critical exponents gamma and (delta1) decrease to zero in tandem with the
critical temperature and ordered moment, while the exponent beta remains
constant. This novel trend distinguishes URu2xRexSi2 from stoichiometric
quantum critical ferromagnets and appears to reflect an underlying competition
between Kondo and ferromagnetic interactions.