
Frequency analysis of the rf emission of oscillating Josephson supercurrent
is a powerful passive way of probing properties of topological Josephson
junctions. In particular, measurements of the Josephson emission enables to
detect the expected presence of topological gapless Andreev bound states that
give rise to emission at half the Josephson frequency $f_J$, rather than
conventional emission at $f_J$. Here we report direct measurement of rf
emission spectra on Josephson junctions made of HgTebased gatetunable
topological weak links. The emission spectra exhibit a clear signal at half the
Josephson frequency $f_{\rm J}/2$. The linewidths of emission lines indicate a
coherence time of $0.3\SI{4}{ns}$ for the $f_{\rm J}/2$ line, much shorter
than for the $f_{\rm J}$ line ($3\SI{4}{ns}$). These observations strongly
point towards the presence of topological gapless Andreev bound states, and
pave the way for a future HgTebased platform for topological quantum
computation.

The HgTe quantum well (QW) is a wellcharacterized twodimensional
topological insulator (2DTI). Its band gap is relatively small (typically on
the order of 10 meV), which restricts the observation of purely topological
conductance to low temperatures. Here, we utilize the straindependence of the
band structure of HgTe QWs to address this limitation. We use
$\text{CdTe}\text{Cd}_{0.5}\text{Zn}_{0.5}\text{Te}$ strainedlayer
superlattices on GaAs as virtual substrates with adjustable lattice constant to
control the strain of the QW. We present magnetotransport measurements, which
demonstrate a transition from a semi metallic to a 2DTI regime in wide QWs,
when the strain is changed from tensile to compressive. Most notably, we
demonstrate a much enhanced energy gap of 55 meV in heavily compressively
strained QWs. This value exceeds the highest possible gap on common IIVI
substrates by a factor of 23, and extends the regime where the topological
conductance prevails to much higher temperatures.

In recent years, Majorana physics has attracted considerable attention in
both theoretical and experimental studies due to exotic new phenomena and its
prospects for faulttolerant topological quantum computation. To this end, one
needs to engineer the interplay between superconductivity and electronic
properties in a topological insulator, but experimental work remains scarce and
ambiguous. Here we report experimental evidence for topological
superconductivity induced in a HgTe quantum well, a twodimensional topological
insulator that exhibits the quantum spin Hall effect. The ac Josephson effect
demonstrates that the supercurrent has a $4\pi$periodicity with the
superconducting phase difference as indicated by a doubling of the voltage step
for multiple Shapiro steps. In addition, an anomalous SQUIDlike response to a
perpendicular magnetic field shows that this $4\pi$periodic supercurrent
originates from states located on the edges of the junction. Both features
appear strongest when the sample is gated towards the quantum spin Hall regime,
thus providing evidence for induced topological superconductivity in the
quantum spin Hall edge states.

Conventional $s$wave superconductivity is understood to arise from singlet
pairing of electrons with opposite Fermi momenta, forming Cooper pairs whose
net momentum is zero [1]. Several recent studies have focused on structures
where such conventional $s$wave superconductors are coupled to systems with an
unusual configuration of electronic spin and momentum at the Fermi surface.
Under these conditions, the nature of the paired state can be modified and the
system may even undergo a topological phase transition [2, 3]. Here we present
measurements and theoretical calculations of several HgTe quantum wells coupled
to either aluminum or niobium superconductors and subject to a magnetic field
in the plane of the quantum well. By studying the oscillatory response of
Josephson interference to the magnitude of the inplane magnetic field, we find
that the induced pairing within the quantum well is spatially varying. Cooper
pairs acquire a tunable momentum that grows with magnetic field strength,
directly reflecting the response of the spindependent Fermi surfaces to the
inplane magnetic field. In addition, in the regime of high electron density,
nodes in the induced superconductivity evolve with the electron density in
agreement with our model based on the Hamiltonian of Bernevig, Hughes, and
Zhang [4]. This agreement allows us to quantitatively extract the value of
$\tilde{g}/v_{F}$, where $\tilde{g}$ is the effective gfactor and $v_{F}$ is
the Fermi velocity. However, at low density our measurements do not agree with
our model in detail. Our new understanding of the interplay between spin
physics and superconductivity introduces a way to spatially engineer the order
parameter, as well as a general framework within which to investigate
electronic spin texture at the Fermi surface of materials.

The realization of quantum spin Hall (QSH) effect in HgTe quantum wells (QWs)
is considered a milestone in the discovery of topological insulators. The QSH
edge states are predicted to allow current to flow at the edges of an
insulating bulk, as demonstrated in various experiments. A key prediction of
QSH theory that remains to be experimentally verified is the breakdown of the
edge conduction under broken time reversal symmetry (TRS). Here we first
establish a rigorous framework for understanding the magnetic field dependence
of electrostatically gated QSH devices. We then report unexpected edge
conduction under broken TRS, using a unique cryogenic microwave impedance
microscopy (MIM), on a 7.5 nm HgTe QW device with an inverted band structure.
At zero magnetic field and low carrier densities, clear edge conduction is
observed in the local conductivity profile of this device but not in the 5.5 nm
control device whose band structure is trivial. Surprisingly, the edge
conduction in the 7.5 nm device persists up to 9 T with little effect from the
magnetic field. This indicates physics beyond simple QSH models, possibly
associated with material specific properties, other symmetry protection and/or
electronelectron interactions.

We report on a temperatureinduced transition from a conventional
semiconductor to a twodimensional topological insulator investigated by means
of magnetotransport experiments on HgTe/CdTe quantum well structures. At low
temperatures, we are in the regime of the quantum spin Hall effect and observe
an ambipolar quantized Hall resistance by tuning the Fermi energy through the
bulk band gap. At room temperature, we find electron and hole conduction that
can be described by a classical twocarrier model. Above the onset of quantized
magnetotransport at low temperature, we observe a pronounced linear
magnetoresistance that develops from a classical quadratic lowfield
magnetoresistance if electrons and holes coexist. Temperaturedependent bulk
band structure calculations predict a transition from a conventional
semiconductor to a topological insulator in the regime where the linear
magnetoresistance occurs.

Topological insulators are a newly discovered phase of matter characterized
by a gapped bulk surrounded by novel conducting boundary states. Since their
theoretical discovery, these materials have encouraged intense efforts to study
their properties and capabilities. Among the most striking results of this
activity are proposals to engineer a new variety of superconductor at the
surfaces of topological insulators. These topological superconductors would be
capable of supporting localized Majorana fermions, particles whose braiding
properties have been proposed as the basis of a faulttolerant quantum
computer. Despite the clear theoretical motivation, a conclusive realization of
topological superconductivity remains an outstanding experimental goal. Here we
present measurements of superconductivity induced in twodimensional
HgTe/HgCdTe quantum wells, a material which becomes a quantum spin Hall
insulator when the well width exceeds d_{C}=6.3 nm. In wells that are 7.5 nm
wide, we find that supercurrents are confined to the onedimensional sample
edges as the bulk density is depleted. However, when the well width is
decreased to 4.5 nm the edge supercurrents cannot be distinguished from those
in the bulk. These results provide evidence for superconductivity induced in
the helical edges of the quantum spin Hall effect, a promising step toward the
demonstration of onedimensional topological superconductivity. Our results
also provide a direct measurement of the widths of these edge channels, which
range from 180 nm to 408 nm.

The quantum spin Hall (QSH) state is a genuinely new state of matter
characterized by a nontrivial topology of its band structure. Its key feature
is conducting edge channels whose spin polarization has potential for
spintronic and quantum information applications. The QSH state was predicted
and experimentally demonstrated to exist in HgTe quantum wells. The existence
of the edge channels has been inferred from the fact that local and nonlocal
conductance values in sufficiently small devices are close to the quantized
values expected for ideal edge channels and from signatures of the spin
polarization. The robustness of the edge channels in larger devices and the
interplay between the edge channels and a conducting bulk are relatively
unexplored experimentally, and are difficult to assess via transport
measurements. Here we image the current in large Hallbars made from HgTe
quantum wells by probing the magnetic field generated by the current using a
scanning superconducting quantum interference device (SQUID). We observe that
the current flows along the edge of the device in the QSH regime, and
furthermore that an identifiable edge channel exists even in the presence of
disorder and considerable bulk conduction as the device is gated or its
temperature is raised. Our results represent a versatile method for the
characterization of new quantum spin Hall materials systems, and confirm both
the existence and the robustness of the predicted edge channels.

The discovery of the Quantum Spin Hall state, and topological insulators in
general, has sparked strong experimental efforts. Transport studies of the
Quantum Spin Hall state confirmed the presence of edge states, showed ballistic
edge transport in micronsized samples and demonstrated the spin polarization
of the helical edge states. While these experiments have confirmed the broad
theoretical model, the properties of the QSH edge states have not yet been
investigated on a local scale.
Using Scanning Gate Microscopy to perturb the QSH edge states on a submicron
scale, we identify welllocalized scattering sites which likely limit the
expected nondissipative transport in the helical edge channels. In the
micronsized regions between the scattering sites, the edge states appear to
propagate unperturbed as expected for an ideal QSH system and are found to be
robust against weak induced potential fluctuations.