• ### The malleability of uranium: manipulating the charge-density wave in epitaxial films(1404.1804)

We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the strains propagated along the a-axis of the uranium layers are of opposite sign. At low temperatures these changes in epitaxy result in dramatic modifications to the behavior of the charge-density wave in uranium. The differences are explained with the current theory for the electron-phonon coupling in the uranium lattice. Our results emphasize the intriguing possibilities of producing epitaxial films of elements that have complex structures like the light actinides uranium to plutonium.
• ### Determination of the Spin Polarization of RFe2 (R = Dy, Er, Y) by Point Contact Andreev Reflection(0809.3723)

Epitaxially grown intermetallic RFe2 (R = Dy, Er, Y) thin films have been studied by point contact Andreev reflection. Spin polarization values were extracted by fitting normalized conductance curves for mechanical Nb/RFe2 point contacts, using a modified Blonder-Tinkham-Klapwijk (BTK) model. Good agreement is found between this model and the experimentally obtained data. Extracted values of spin polarization, which are close to the spin polarization of Fe, reveal no variation with the rare earth component for the measured intermetallic compounds. This suggests that using this technique we probe the Fe sub-lattice, and that this lattice drives spintronic effects in these compounds.
• ### Controllable modification of the anisotropy energy in Laves phase YFe2 by Ar+ ion implantation(1009.1520)

Implanted 3.25 keV Ar+ ions have been used to modify the in-plane bulk anisotropy in thin films of epitaxially grown Laves phase YFe2. The magneto optical Kerr effect, vibrating sample magnetometry and computational modeling have been used to show that the dominant source of anisotropy changes from magnetoelastic in as-grown samples to magnetocrystalline in ion implanted samples. This change occurs at a critical fluence of order 1017 Ar+ ions cm-2. The change in source of the anisotropy is attributed to a relaxation of the strain inherent in the epitaxially grown thin-films. Atomic force microscopy shows that the samples' topography remains unchanged after ion implantation. The ability to control the dominant source of magnetic anisotropy without affecting the sample surface could have important consequences in the fabrication of patterned media for high use in density magnetic data storage devices.
• ### Profile of the U 5f magnetization in U/Fe multilayers(0710.0176)

Sept. 30, 2007 cond-mat.other
Recent calculations, concerning the magnetism of uranium in the U/Fe multilayer system have described the spatial dependence of the 5f polarization that might be expected. We have used the x-ray resonant magnetic reflectivity technique to obtain the profile of the induced uranium magnetic moment for selected U/Fe multilayer samples. This study extends the use of x-ray magnetic scattering for induced moment systems to the 5f actinide metals. The spatial dependence of the U magnetization shows that the predominant fraction of the polarization is present at the interfacial boundaries, decaying rapidly towards the center of the uranium layer, in good agreement with predictions.
• ### Giant Magnetoresistance by Exchange Springs in DyFe$_2$/YFe$_2$ Superlattices(cond-mat/0103354)

Magnetization and magnetoresistance measurements are reported for antiferromagnetically coupled DyFe$_2$/YFe$_2$ multilayers in fields up to 23 T. We demonstrate that the formation of short exchange springs (~ 2 nm) in the magnetically soft YFe$_2$ layers results in a giant magneto-resistance as high as 32% in the spring region. It is shown that both the magnitude of the effect, and its dependence on magnetic field, are in good agreement with the theory of Levy and Zhang for giant magnetoresistance due to domain wall like structures.