
We show that nonexponential fidelity decays in randomized benchmarking
experiments on quantum dot qubits are consistent with numerical simulations
that incorporate lowfrequency noise. By expanding standard randomized
benchmarking analysis to this experimental regime, we find that such
nonexponential decays are better modeled by multiple exponential decay rates,
leading to an instantaneous control fidelity for isotopicallypurifiedsilicon
MOS quantum dot qubits which can be as high as 99.9% when lowfrequency noise
conditions and system calibrations are favorable. These advances in qubit
characterization and validation methods underpin the considerable prospects for
silicon as a qubit platform for faulttolerant quantum computation.

Report of the Higgs working group for the Workshop `Physics at TeV
Colliders', Les Houches, France, 21 May  1 June 2001. It contains 7 separate
sections: A. Theoretical Developments B. Higgs Searches at the Tevatron C.
Experimental Observation of an invisible Higgs Boson at LHC D. Search for the
Standard Model Higgs Boson using Vector Boson Fusion at the LHC E. Study of the
MSSM channel $A/H \to \tau \tau$ at the LHC F. Searching for Higgs Bosons in
$t\bar t H$ Production G. Studies of Charged Higgs Boson Signals for the
Tevatron and the LHC

We review the prospects for studies in electroweak physics at the LHC.