We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous control fidelity for isotopically-purified-silicon MOS quantum dot qubits which can be as high as 99.9% when low-frequency noise conditions and system calibrations are favorable. These advances in qubit characterization and validation methods underpin the considerable prospects for silicon as a qubit platform for fault-tolerant quantum computation.

Report of the Higgs working group for the Workshop `Physics at TeV Colliders', Les Houches, France, 21 May - 1 June 2001. It contains 7 separate sections: A. Theoretical Developments B. Higgs Searches at the Tevatron C. Experimental Observation of an invisible Higgs Boson at LHC D. Search for the Standard Model Higgs Boson using Vector Boson Fusion at the LHC E. Study of the MSSM channel $A/H \to \tau \tau$ at the LHC F. Searching for Higgs Bosons in $t\bar t H$ Production G. Studies of Charged Higgs Boson Signals for the Tevatron and the LHC

We review the prospects for studies in electroweak physics at the LHC.