
Exploration of novel electromagnetic phenomena is a subject of great interest
in topological quantum materials. One of the unprecedented effects to be
experimentally verified is topological magnetoelectric (TME) effect originating
from an unusual coupling of electric and magnetic fields in materials. A
magnetic heterostructure of topological insulator (TI) hosts such an exotic
magnetoelectric coupling and can be expected to realize the TME effect as an
axion insulator. Here we designed a magnetic TI with tricolor structure where a
nonmagnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagnetic
Crdoped (Bi, Sb)2Te3 and a hard ferromagnetic Vdoped (Bi, Sb)2Te3.
Accompanied by the quantum anomalous Hall (QAH) effect, we observe zero Hall
conductivity plateaus, which are a hallmark of the axion insulator state, in a
wide range of magnetic field between the coercive fields of Cr and Vdoped
layers. The resistance of the axion insulator state reaches as high as 10^9
ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% upon
the transition from the QAH state. The tricolor structure of TI may not only be
an ideal arena for the topologically distinct phenomena, but also provide
magnetoresistive applications for advancing dissipationless topological
electronics.

The electronic orders in magnetic and dielectric materials form the domains
with different signs of order parameters. The control of configuration and
motion of the domain walls (DWs) enables gigantic, nonvolatile responses
against minute external fields, forming the bases of contemporary electronics.
As an extension of the DW function concept, we realize the onedimensional
quantized conduction on the magnetic DWs of a topological insulator (TI). The
DW of a magnetic TI is predicted to host the chiral edge state (CES) of
dissipationless nature when each magnetic domain is in the quantum anomalous
Hall state. We design and fabricate the magnetic domains in a magnetic TI film
with the tip of the magnetic force microscope, and clearly prove the existence
of the chiral onedimensional edge conduction along the prescribed DWs. The
proofofconcept devices based on the reconfigurable CES and LandauerButtiker
formalism are exemplified for multipledomain configurations with the
welldefined DW channels.

Precise estimation of spin Hall angle as well as successful maximization of
spinorbit torque (SOT) form a basis of electronic control of magnetic
properties with spintronic functionality. Until now, currentnonlinear Hall
effect, or second harmonic Hall voltage has been utilized as one of the methods
for estimating spin Hall angle, which is attributed to the magnetization
oscillation by SOT. Here, we argue the second harmonic Hall voltage in
magnetic/nonmagnetic topological insulator (TI) heterostructures,
Cr$_x$(Bi$_{1y}$Sb$_y$)$_{2x}$Te$_3$/(Bi$_{1y}$Sb$_y$)$_2$Te$_3$. From the
angular, temperature and magnetic field dependence, it is unambiguously shown
that the large second harmonic Hall voltage in TI heterostructures is governed
not by SOT but mainly by asymmetric magnon scattering mechanism without
magnetization oscillation. Thus, this method does not allow an accurate
estimation of spin Hall angle when magnons largely contribute to electron
scattering. Instead, the SOT contribution in a TI heterostructure is
exemplified by current pulse induced nonvolatile magnetization switching,
which is realized with a current density of $\sim 2.5 \times 10^{10}
\mathrm{A/m}^2$, showing its potential as spintronic materials.

We report currentdirection dependent or unidirectional magnetoresistance
(UMR) in magnetic/nonmagnetic topological insulator (TI) heterostructures,
Cr$_x$(Bi$_{1y}$Sb$_y$)$_{2x}$Te$_3$/(Bi$_{1y}$Sb$_y$)$_2$Te$_3$, that is
several orders of magnitude larger than in other reported systems. From the
magnetic field and temperature dependence, the UMR is identified to originate
from the asymmetric scattering of electrons by magnons. In particular, the
large magnitude of UMR is an outcome of spinmomentum locking and a small Fermi
wavenumber at the surface of TI. In fact, the UMR is maximized around the Dirac
point with the minimal Fermi wavenumber.

Electrodynamic responses from threedimensional (3D) topological insulators
(TIs) are characterized by the universal magnetoelectric $E\cdot B$ term
constituent of the Lagrangian formalism. The quantized magnetoelectric
coupling, which is generally referred to as topological magnetoelectric (TME)
effect, has been predicted to induce exotic phenomena including the universal
lowenergy magnetooptical effects. Here we report the experimental
demonstration of the longsought TME effect, which is exemplified by
magnetooptical Faraday and Kerr rotations in the quantum anomalous Hall (QAH)
states of magnetic TI surfaces by terahertz magnetooptics. The universal
relation composed of the observed Faraday and Kerr rotation angles but not of
any material parameters (e.g. dielectric constant and magnetic susceptibility)
well exhibits the trajectory toward the fine structure constant $\alpha$ $(=
2\pi e^2/hc \sim 1/137)$ in the quantized limit. Our result will pave a way for
versatile TME effects with emergent topological functions.

We achieve the enhancement of circular photogalvanic effect arising from the
photoinjection of spins in topological insulator thin films by tuning the
Fermi level ($E_{\rm F}$). A series of (Bi$_{1x}$Sb$_x$)$_2$Te$_3$ thin films
were tailored so that the Fermi energy ranges above 0.34 eV to below 0.29 eV of
the Dirac point, i.e., from the bulk conduction band bottom to the valence band
top through the bulk ingap surfaceDirac cone. The circular photogalvanic
current, indicating a flow of spinpolarized surfaceDirac electrons, shows a
pronounced peak when the $E_{\rm F}$ is set near the Dirac point and is also
correlated with the carrier mobility. Our observation reveals that there are
substantial scatterings between the surfaceDirac and bulkstate electrons in
the generation process of spinpolarized photocurrent, which can be avoided by
designing the electronic structure in topological insulators.

Quantum anomalous Hall effect (QAHE), which generates dissipationless edge
current without external magnetic field, is observed in magneticion doped
topological insulators (TIs), such as Cr and Vdoped (Bi,Sb)2Te3. The QAHE
emerges when the Fermi level is inside the magnetically induced gap around the
original Dirac point of the TI surface state. Although the size of gap is
reported to be about 50 meV, the observable temperature of QAHE has been
limited below 300 mK. We attempt magneticCr modulation doping into topological
insulator (Bi,Sb)2Te3 films to increase the observable temperature of QAHE. By
introducing the richCrdoped thin (1 nm) layers at the vicinity of the both
surfaces based on nonCrdoped (Bi,Sb)2Te3 films, we have succeeded in
observing the QAHE up to 2 K. The improvement in the observable temperature
achieved by this modulationdoping appears to be originating from the
suppression of the disorder in the surface state interacting with the rich
magnetic moments. Such a superlattice designing of the stabilized QAHE may pave
a way to dissipationless electronics based on the highertemperature and zero
magneticfield quantum conduction.

The spinmomentum locking at the Dirac surface state of a topological
insulator (TI) offers a distinct possibility of a highly efficient
chargetospin current (CS) conversion compared with spin Hall effects in
conventional paramagnetic metals. For the development of TIbased spin current
devices, it is essential to evaluate its conversion efficiency quantitatively
as a function of the Fermi level EF position. Here we exemplify a coefficient
of qICS to characterize the interface CS conversion effect by using spin
torque ferromagnetic resonance (STFMR) for (Bi1xSbx)2Te3 thin films whose EF
is tuned across the band gap. In bulk insulating conditions, interface CS
conversion effect via Dirac surface state is evaluated as nearly constant large
values of qICS, reflecting that the qICS is inversely proportional to the Fermi
velocity vF that is almost constant. However, when EF traverses through the
Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy
of surface spins or instability of helical spin structure. These results
demonstrate that the fine tuning of the EF in TI based heterostructures is
critical to maximizing the efficiency using the spinmomentum locking
mechanism.

By breaking the timereversalsymmetry in threedimensional topological
insulators with introduction of spontaneous magnetization or application of
magnetic field, the surface states become gapped, leading to quantum anomalous
Hall effect or quantum Hall effect, when the chemical potential locates inside
the gap. Further breaking of inversion symmetry is possible by employing
magnetic topological insulator heterostructures that host nondegenerate top and
bottom surface states. Here, we demonstrate the tailoredmaterial approach for
the realization of robust quantum Hall states in the bilayer system, in which
the cooperative or cancelling combination of the anomalous and ordinary Hall
responses from the respective magnetic and nonmagnetic layers is exemplified.
The appearance of quantum Hall states at filling factor 0 and +1 can be
understood by the relationship of energy band diagrams for the two independent
surface states. The designable heterostructures of magnetic topological
insulator may explore a new arena for intriguing topological transport and
functionality.

The threedimensional (3D) topological insulator (TI) is a novel state of
matter as characterized by twodimensional (2D) metallic Dirac states on its
surface. Bibased chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their
combined/mixed compounds like Bi2Se2Te and (Bi1xSbx)2Te3 are typical members
of 3DTIs which have been intensively studied in forms of bulk single crystals
and thin films to verify the topological nature of the surface states. Here, we
report the realization of the Quantum Hall effect (QHE) on the surface Dirac
states in (Bi1xSbx)2Te3 films (x = 0.84 and 0.88). With electrostatic
gatetuning of the Fermi level in the bulk band gap under magnetic fields, the
quantum Hall states with filling factor \nu = \pm 1 are resolved with quantized
Hall resistance of Ryx = h/e2 and zero longitudinal resistance, owing to chiral
edge modes at top/bottom surface Dirac states. Furthermore, the appearance of a
\nu = 0 state (\sigma xy = 0) reflects a pseudospin Hall insulator state when
the Fermi level is tuned in between the energy levels of the nondegenerate top
and bottom surface Dirac points. The observation of the QHE in 3D TI films may
pave a way toward TIbased electronics.

Topological insulators are bulk electronic insulators which possess symmetry
protected gapless modes on their surfaces. Breaking the symmetries that
underlie the gapless nature of the surface modes is predicted to give rise to
exotic new states of matter. In particular, it has recently been predicted and
shown that breaking of time reversal symmetry in the form of ferromagnetism can
give rise to a gapped state characterized by a zero magnetic field quantized
Hall response and dissipationless longitudinal transport known as the Quantum
Anomalous Hall (QAH) state. A key question that has thus far remained
experimentally unexplored is the relationship of this new type of quantum Hall
state with the previously known orbitally driven quantum Hall states. Here, we
show experimentally that a ferromagnetic topological insulator exhibiting the
QAH state is well described by the global phase diagram of the quantum Hall
effect. By mapping the behavior of the conductivity tensor in the parameter
space of temperature, magnetic field, and chemical potential in the vicinity of
the QAH phase, we find evidence for quantum criticality and delocalization
behavior that can quantitatively be described by the renormalization group
properties of the quantum Hall ground state. This result demonstrates that the
QAH state observed in ferromagnetic topological insulators can be understood
within the context of the law of corresponding states which governs the quantum
Hall state. This suggests a roadmap for studying the QAH effect including
transitions to possible adjacent topologically nontrivial states and a
possible universality class for the QAH transition.