• ### Topological semimetal state and field-induced Fermi surface reconstruction in antiferromagnetic monopnictide NdSb(1702.08121)

March 16, 2018 cond-mat.mtrl-sci
We report the experimental realization of Dirac semimetal state in NdSb, a material with antiferromagnetic ground state. The occurrence of topological semimetal state has been well supported by our band structure calculations and the experimental observation of chiral anomaly induced negative magnetoresistance. A field-induced Fermi surface reconstruction is observed, in response to the change of spin polarization. The observation of topological semimetal state in a magnetic material provides an opportunity to investigate the magneto-topological phenomena.
• ### Magnetoelectric and Raman spectroscopic studies of single-crystalline MnCr2O4(1801.09865)

Jan. 30, 2018 cond-mat.mtrl-sci
MnCr2O4 that exhibits spin frustration and complex spiral spin order is of great interest from both fundamental as well as application-oriented perspectives. Unlike CoCr2O4 whose ground state presents the coexistence of commensurate spiral spin order (CSSO) and ferroelectric order, MnCr2O4 shows no multiferroicity. One reason is that the spiral spin order is highly sensitive to the oxygen concentration in MnCr2O4. Here, we have successfully grown high-quality single-crystalline MnCr2O4 by the chemical vapor transport method. We observe a new first-order magnetic transition from the incommensurate spiral spin order (ICSSO) at 19.4 K to the CSSO at 17.4 K. This magnetic transition is verified by magnetization, specific heat, and magnetoelectric measurements, which also confirm that the ground state exhibits the coexistence of the CSSO and magnetoelectricity below 17.4 K. Interestingly, the temperature evolution of Raman spectra between 5.4 and 300 K suggests that the structure remains the same. We also find that the phase-transition temperature of the CSSO decreases as applied magnetic field increases up to 45 kOe.
• ### Reciprocal space mapping of magnetic order in thick epitaxial MnSi films(1710.00544)

We report grazing incidence small angle neutron scattering (GISANS) and complementary off-specular neutron reflectometry (OSR) of the magnetic order in a single-crystalline epitaxial MnSi film on Si(111) in the thick film limit. Providing a means of direct reciprocal space mapping, GISANS and OSR reveal a magnetic modulation perpendicular to the films under magnetic fields parallel and perpendicular to the film, where additional polarized neutron reflectometry (PNR) and magnetization measurements are in excellent agreement with the literature. Regardless of field orientation, our data does not suggest the presence of more complex spin textures, notably the formation of skyrmions. This observation establishes a distinct difference with bulk samples of MnSi of similar thickness under perpendicular field, in which a skyrmion lattice dominates the phase diagram. Extended x-ray absorption fine structure measurements suggest that small shifts of the Si positions within the unstrained unit cell control the magnetic state, representing the main difference between the films and thin bulk samples.
• ### First-principles Study on Structural, Thermal, Mechanical and Dynamic Stability of T'-MoS$_2$(1608.05171)

Aug. 3, 2017 cond-mat.mes-hall
Using first-principles density functional theory calculations, we investigate the structure, stability, optical modes and electronic band gap of a distorted tetragonal MoS$_2$ monolayer (T'-MoS$_2$). Our simulated scanning tunnel microscopy (STM) images of T'-MoS$_2$ are dramatically similar with those STM images which were identified as K$_{x}$(H$_{2}$O)$_{y}$MoS$_{2}$ from a previous experimental study. This similarity suggests that T'-MoS$_2$ might have already been observed in experiment but was unexpectedly misidentified. Furthermore, we verify the stability of T'-MoS$_2$ from thermal, mechanical and dynamic aspects, by \emph{ab initio} molecular dynamics simulation, elastic constants evaluation and phonon band structure calculation based on density functional perturbation theory, respectively. In addition, we calculate the eigenfrequencies and eigenvectors of the optical modes of T'-MoS$_2$ at $\Gamma$ point and distinguish their Raman and infrared activity by pointing out their irreducible representations using group theory; at the same time, we compare the Raman modes of T'-MoS$_2$ with those of H-MoS$_2$ and T-MoS$_2$. Our results provide a useful guidance for further experimental identification and characterization of T'-MoS$_2$.
• ### Imaging and manipulation of skyrmion lattice domains in Cu2OSeO3(1611.08168)

Nov. 24, 2016 cond-mat.mes-hall
Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in high-density, low-energy nonvolatile memory. Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which makes it difficult to write information unless they are spatially broken up into smaller units, each representing a bit. Thus, the formation and manipulation of skyrmion lattice domains is a prerequisite for memory applications. Here, using an imaging technique based on resonant magnetic x-ray diffraction, we demonstrate the mapping and manipulation of skyrmion lattice domains in Cu2OSeO3. The material is particularly interesting for applications owing to its insulating nature, allowing for electric field-driven domain manipulation.
• ### Strain in epitaxial MnSi films on Si(111) in the thick film limit studied by polarization-dependent extended x-ray absorption fine structure(1611.07736)

Nov. 23, 2016 cond-mat.mtrl-sci
We report a study of the strain state of epitaxial MnSi films on Si(111) substrates in the thick film limit (100-500~\AA) as a function of film thickness using polarization-dependent extended x-ray absorption fine structure (EXAFS). All films investigated are phase-pure and of high quality with a sharp interface between MnSi and Si. The investigated MnSi films are in a thickness regime where the magnetic transition temperature $T_\mathrm{c}$ assumes a thickness-independent enhanced value of $\geq$43~K as compared with that of bulk MnSi, where $T_\mathrm{c} \approx 29~{\rm K}$. A detailed refinement of the EXAFS data reveals that the Mn positions are unchanged, whereas the Si positions vary along the out-of-plane [111]-direction, alternating in orientation from unit cell to unit cell. Thus, for thick MnSi films, the unit cell volume is essentially that of bulk MnSi --- except in the vicinity of the interface with the Si substrate (thin film limit). In view of the enhanced magnetic transition temperature we conclude that the mere presence of the interface, and its specific characteristics, strongly affects the magnetic properties of the entire MnSi film, even far from the interface. Our analysis provides invaluable information about the local strain at the MnSi/Si(111) interface. The presented methodology of polarization dependent EXAFS can also be employed to investigate the local structure of other interesting interfaces.
• ### Multidomain Skyrmion Lattice State in Cu$_2$OSeO$_3$(1606.01187)

June 3, 2016 cond-mat.mtrl-sci
Magnetic skyrmions in chiral magnets are nanoscale, topologically-protected magnetization swirls that are promising candidates for spintronics memory carriers. Therefore, observing and manipulating the skyrmion state on the surface level of the materials are of great importance for future applications. Here, we report a controlled way of creating a multidomain skyrmion state near the surface of a Cu$_{2}$OSeO$_{3}$ single crystal, observed by soft resonant elastic x-ray scattering. This technique is an ideal tool to probe the magnetic order at the $L_{3}$ edge of $3d$ metal compounds giving a depth sensitivity of ${\sim}50$ nm. The single-domain sixfold-symmetric skyrmion lattice can be broken up into domains overcoming the propagation directions imposed by the cubic anisotropy by applying the magnetic field in directions deviating from the major cubic axes. Our findings open the door to a new way to manipulate and engineer the skyrmion state locally on the surface, or on the level of individual skyrmions, which will enable applications in the future.
• ### Resonant Elastic X-ray Scattering from the Skyrmion Lattice in Cu$_{2}$OSeO$_{3}$(1606.01194)

June 3, 2016 cond-mat.mtrl-sci
We report the study of the skyrmion state near the surface of Cu$_2$OSeO$_3$ using soft resonant elastic x-ray scattering (REXS) at the Cu $L_3$ edge. Within the lateral sampling area of $200 \times 200$ $\mu$m$^2$, we found a long-range-ordered skyrmion lattice phase as well as the formation of skyrmion domains via the multiple splitting of the diffraction spots. In a recent REXS study of the skyrmion phase of Cu$_2$OSeO$_3$ [Phys. Rev. Lett. 112, 167202 (2014)], Langner et al. reported the observation of the unexpected existence of two distinct skyrmion sublattices that arise from inequivalent Cu sites, and that the rotation and superposition of the two periodic structures leads to a moir\'{e} pattern. However, we find no energy splitting of the Cu peak in x-ray absorption measurements and, instead, discuss alternative origins of the peak splitting. In particular, we find that for magnetic field directions deviating from the major cubic axes, a multidomain skyrmion lattice state is obtained, which consistently explains the splitting of the magnetic spots into two - and more - peaks.
• ### Transverse field muon-spin rotation measurement of the topological anomaly in a thin film of MnSi(1511.04972)

April 26, 2016 cond-mat.str-el
We present the results of transverse-field muon-spin rotation measurements on an epitaxially grown 40 nm-thick film of MnSi on Si(111) in the region of the field-temperature phase diagram where a skyrmion phase has been observed in the bulk. We identify changes in the quasistatic magnetic field distribution sampled by the muon, along with evidence for magnetic transitions around $T\approx 40$ K and 30 K. Our results suggest that the cone phase is not the only magnetic texture realized in film samples for out-of-plane fields.
• ### The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures(1604.03272)

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting the AFMI NiO layer, the SMR dramatically decreases by decreasing the temperature down to the antiferromagnetically ordered state of NiO, which implies that the AFM order prevents rather than promotes the spin-current transport. On the other hand, the magnetic proximity effect (MPE) on induced Pt moments by YIG, which entangles with the spin-Hall effect (SHE) in Pt, can be efficiently screened, and pure SMR can be derived by insertion of NiO. The dual roles of the NiO insertion including efficiently blocking the MPE and transporting the spin current from Pt to YIG are outstanding compared with other antiferromagnetic (AFM) metal or nonmagnetic metal (NM).
• ### Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers(1603.03578)

We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude of AHR is dramatically enhanced compared with Pt/YIG bilayers. The enhancement is much more profound at higher temperatures and peaks at the IrMn thickness of 3 nm. The observed spin-Hall magnetoresistance (SMR) in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the entire thickness of the IrMn layer to interact with the YIG layer. The lack of conventional anisotropic magnetoresistance (CAMR) implies that the insertion of the IrMn layer between Pt and YIG efficiently suppresses the magnetic proximity effect (MPE) on induced Pt moments by YIG. Our results suggest that the dual roles of the InMn insertion in Pt/IrMn/YIG heterostructures are to block the MPE and to transport the spin current between Pt and YIG layers. We discuss possible mechanisms for the enhanced AHR.
• ### Study of negative thermal expansion in the frustrated spinel ZnCr2Se4(1401.4246)

The origin of negative thermal expansion (NTE) in the bond frustrated ZnCr2Se4 has been explored. ESR and FTIR document an ideal paramagnetic state above 100 K, below which ferromagnetic clusters coexist with the paramagnetic state down to TN. By fitting the inverse susceptibility above 100 K using a modified paramagnetic Curie-Weiss law, an exponentially changeable exchange integral J is deduced. In the case of the variable J, magnetic exchange and lattice elastic energy couple with each other effectively via magnetoelastic interaction in the ferromagnetic clusters, where NTE occurs at a loss of exchange energy while a gain of lattice elastic one.
• ### Enhanced Superconductivity by Rare-earth Metal-doping in Phenanthrene(1203.5887)

We successfully synthesized La- and Sm-doped phenanthrene powder samples and discovered superconductivity at $T_{\rm c}$ around 6 K in them. The $T_{\rm c}$s are 6.1 K for LaPhenanthrene and 6.0 K for SmPhenanthrene, which are enhanced by about 1 K and 0.5 K compared to those in $A_3$Phenanthrene ($A$=K and Rb) and in $Ae_{1.5}$Phenanthrene ($Ae$ = Sr and Ba) superconductors respectively. The superconductive shielding fractions for LaPhenanthrene and SmPhenanthrene are 46.1%$and 49.8$%$at 2 K, respectively. The little effect of the doping of the magnetic ion Sm$^{3+}$on$T_c$and the positive pressure dependence coefficient on$T_{\rm c}$strongly suggests unconventional superconductivity in the doped phenanthrene superconductors. The charge transfer to organic molecules from dopants of La and Sm induces a redshift of 7 cm$^{-1}$per electron for the mode at 1441 cm$^{-1}$in the Raman spectra, which is almost the same as those observed in$A_3$Phenanthrene ($A$=K and Rb) and$Ae_{1.5}$Phenanthrene ($Ae\$ = Sr and Ba) superconductors.
• ### Distribution of doped Mn at the \Sigma 3 (112) grain boundary in Ge(1005.3904)

May 21, 2010 cond-mat.mtrl-sci
Using first-principles density functional theory method, we have investigated the distribution and magnetism of doped Mn atoms in the vicinity of the 3 (112) grain boundary in Ge. We find that at low concentration, the substitutional sites are energetically favorable over the interstitial ones for Mn. The binding energy of Mn varies with lattice sites in the boundary region, and hence a non-uniform distribution of Mn nears the boundary. However, the average of their segregation energy is quite small, thus no remarkable grain boundary segregation of Mn is predicted. Due to volume expansion at the grain boundary, the spin polarization of Mn is slightly enhanced. Overall, we find that the magnetism of Mn-doped Ge is not sensitively dependent on the grain structure.