During the shutdown of the CERN Large Hadron Collider in 2013-2014, an
additional pixel layer was installed between the existing Pixel detector of the
ATLAS experiment and a new, smaller radius beam pipe. The motivation for this
new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the
robustness and performance of the ATLAS tracking system, given the higher
instantaneous and integrated luminosities realised following the shutdown.
Because of the extreme radiation and collision rate environment, several new
radiation-tolerant sensor and electronic technologies were utilised for this
layer. This paper reports on the IBL construction and integration prior to its
operation in the ATLAS detector.
The radiation hardness of commercial Silicon Carbide and Gallium Nitride
power MOSFETs is presented in this paper, for Total Ionizing Dose effects and
Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar
tests are discussed for commercial DC-DC converters, also tested in operation
under magnetic field.
A small set of final prototypes of the ATLAS Inner Detector silicon tracker
(Pixel and SCT) were used to take data during the 2004 Combined Test Beam. Data
were collected from runs with beams of different flavour (electrons, pions,
muons and photons) with a momentum range of 2 to 180 GeV/c. Four independent
methods were used to align the silicon modules. The corrections obtained were
validated using the known momenta of the beam particles and were shown to yield
consistent results among the different alignment approaches. From the residual
distributions, it is concluded that the precision attained in the alignment of
the silicon modules is of the order of 5 micrometers in their most precise