
Nanoelectronic devices embedded in the twodimensional electron system (2DES)
of a GaAs/AlGaAs heterostructure enable a large variety of applications from
fundamental research to high speed transistors. Electrical circuits are thereby
commonly defined by creating barriers for carriers by selective depletion of a
preexisting 2DES. Here we explore an alternative approach: we deplete the 2DES
globally by applying a negative voltage to a global top gate and screen the
electric field of the top gate only locally using nanoscale gates placed on the
wafer surface between the plane of the 2DES and the top gate. Free carriers are
located beneath the screen gates and their properties can be controlled by
means of geometry and applied voltages. This method promises considerable
advantages for the definition of complex circuits by the electric field effect
as it allows to reduce the number of gates and simplify gate geometries.
Examples are carrier systems with ring topology or large arrays of quantum
dots. Here, we present a first exploration of this method pursuing field
effect, Hall effect and AharonovBohm measurements to study electrostatic,
dynamic and coherent properties.

We investigate experimentally and theoretically the interference at avoided
crossings which are repeatedly traversed as a consequence of an applied ac
field. Our model system is a charge qubit in a serial double quantum dot
connected to two leads. Our focus lies on effects caused by simultaneous
driving with two different frequencies. We work out how the commensurability of
the driving frequencies affects the symmetry of the interference patterns both
in real space and in Fourier space. For commensurable frequencies, the symmetry
depends sensitively on the relative phase between the two modes, whereas for
incommensurable frequencies the symmetry of monochromatic driving is always
recovered.

Breaking timereversal symmetry (TRS) in the absence of a net bias can give
rise to directed steadystate nonequilibrium transport phenomena such as
ratchet effects. Here we present, theoretically and experimentally, the concept
of a Lissajous rocking ratchet as an instrument based on breaking TRS. Our
system is a semiconductor quantum dot (QD) with periodically modulated dotlead
tunnel barriers. Broken TRS gives rise to single electron tunneling current.
Its direction is fully controlled by exploring frequency and phase relations
between the two barrier modulations. The concept of Lissajous ratchets can be
realized in a large variety of different systems, including nanoelectrical,
nanoelectromechanical or superconducting circuits. It promises applications
based on a detailed onchip comparison of radiofrequency signals.

Onchip magnets can be used to implement relatively large local magnetic
field gradients in na noelectronic circuits. Such field gradients provide
possibilities for allelectrical control of electron spinqubits where
important coupling constants depend crucially on the detailed field
distribution. We present a double quantum dot (QD) hybrid device laterally
defined in a GaAs / AlGaAs het erostructure which incorporates two single
domain nanomagnets. They have appreciably different coercive fields which
allows us to realize four distinct configurations of the local inhomogeneous
field distribution. We perform dc transport spectroscopy in the Paulispin
blockade regime as well as electricdipoleinduced spin resonance (EDSR)
measurements to explore our hybrid nanodevice. Characterizing the two
nanomagnets we find excellent agreement with numerical simulations. By
comparing the EDSR measurements with a second double QD incorporating just one
nanomagnet we reveal an important advantage of having one magnet per QD: It
facilitates strong field gradients in each QD and allows to control the
electron spins individually for instance in an EDSR experi ment. With just one
single domain nanomagnet and common QD geometries EDSR can likely be performed
only in one QD.

We investigate energy transfer between counterpropagating quantum Hall edge
channels (ECs) in a twodimensional electron system at filling factor \nu=1.
The ECs are separated by a thin impenetrable potential barrier and Coulomb
coupled, thereby constituting a quasi onedimensional analogue of a spinless
Luttinger liquid (LL). We drive one, say hot, EC far from thermal equilibrium
and measure the energy transfer rate P into the second, cold, EC using a
quantum point contact as a bolometer. The dependence of P on the drive bias
indicates breakdown of the momentum conservation, whereas P is almost
independent on the length of the region where the ECs interact. Interpreting
our results in terms of plasmons (collective density excitations), we find that
the energy transfer between the ECs occurs via plasmon backscattering at the
boundaries of the LL. The backscattering probability is determined by the LL
interaction parameter and can be tuned by changing the width of the
electrostatic potential barrier between the ECs.

A Quantum Point Contact (QPC) causes a onedimensional constriction on the
spatial potential landscape of a twodimensional electron system. By tuning the
voltage applied on a QPC at low temperatures the resulting regular steplike
electron conductance quantization can show an additional kink near pinchoff
around 0.7(2$e^2$/h), called 0.7anomaly. In a recent publication, we presented
a combination of theoretical calculations and transport measurements that lead
to a detailed understanding of the microscopic origin of the 0.7anomaly.
Functional Renormalization Groupbased calculations were performed exhibiting
the 0.7anomaly even when no symmetrybreaking external magnetic fields are
involved. According to the calculations the electron spin susceptibility is
enhanced within a QPC that is tuned in the region of the 0.7anomaly. Moderate
externally applied magnetic fields impose a corresponding enhancement in the
spin magnetization. In principle, it should be possible to map out this spin
distribution optically by means of the Faraday rotation technique. Here we
report the initial steps of an experimental project aimed at realizing such
measurements. Simulations were performed on a particularly predesigned
semiconductor heterostructure. Based on the simulation results a sample was
built and its basic transport and optical properties were investigated.
Finally, we introduce a sample gate design, suitable for combined transport and
optical studies.

Controlling coherent interaction at avoided crossings is at the heart of
quantum information processing. The regime between sudden switches and
adiabatic transitions is characterized by quantum superpositions that enable
interference experiments. Here, we implement periodic passages at intermediate
speed in a GaAsbased twoelectron charge qubit and observe
LandauZenerSt\"uckelbergMajorana (LZSM) quantum interference of the
resulting superposition state. We demonstrate that LZSM interferometry is a
viable and very general tool to not only study qubit properties but beyond to
decipher decoherence caused by complex environmental influences. Our scheme is
based on straightforward steady state experiments. The coherence time of our
twoelectron charge qubit is limited by electronphonon interaction. It is much
longer than previously reported for similar structures.

In this work we report experiments on defined by shallow etching narrow Hall
bars. The magnetotransport properties of intermediate mobility twodimensional
electron systems are investigated and analyzed within the screening theory of
the integer quantized Hall effect. We observe a nonmonotonic increase of Hall
resistance at the low magnetic field ends of the quantized plateaus, known as
the overshoot effect. Unexpectedly, for Hall bars that are defined by shallow
chemical etching the overshoot effect becomes more pronounced at elevated
temperatures. We observe the overshoot effect at odd and even integer plateaus,
which favor a spin independent explanation, in contrast to discussion in the
literature. In a second set of the experiments, we investigate the overshoot
effect in gate defined Hall bar and explicitly show that the amplitude of the
overshoot effect can be directly controlled by gate voltages. We offer a
comprehensive explanation based on scattering between evanescent incompressible
channels.

Spin qubits have been successfully realized in electrostatically defined,
lateral fewelectron quantum dot circuits. Qubit readout typically involves
spin to charge information conversion, followed by a charge measurement made
using a nearby biased quantum point contact. It is critical to understand the
backaction disturbances resulting from such a measurement approach. Previous
studies have indicated that quantum point contact detectors emit phonons which
are then absorbed by nearby qubits. We report here the observation of a
pronounced backaction effect in multiple dot circuits where the absorption of
detectorgenerated phonons is strongly modified by a quantum interference
effect, and show that the phenomenon is well described by a theory
incorporating both the quantum point contact and coherent phonon absorption.
Our combined experimental and theoretical results suggest strategies to
suppress backaction during the qubit readout procedure.

We study theoretically nonequilibrium LandauZenerSt\"uckelberg (LZS)
dynamics in a driven double quantum dot (DQD) including dephasing and,
importantly, energy relaxation due to environmental fluctuations. We derive
effective nonequilibrium Bloch equations. These allow us to identify clear
signatures for LZS oscilations observed but not recognized as such in
experiments [Petersson et al., Phys. Rev. Lett. 105, 246804, 2010] and to
identify the full environmental fluctuation spectra acting on a DQD given
experimental data as in [Petersson et al., Phys. Rev. Lett. 105, 246804, 2010].
Herein we find that superOhmic fluctuations, typically due to phonons, are the
main relaxation channel for a detuned DQD whereas Ohmic fluctuations dominate
at zero detuning.

The capacitive couplings between gatedefined quantum dots and their gates
vary considerably as a function of applied gate voltages. The conversion
between gate voltages and the relevant energy scales is usually performed in a
regime of rather symmetric dotlead tunnel couplings strong enough to allow
direct transport measurements. Unfortunately this standard procedure fails for
weak and possibly asymmetric tunnel couplings, often the case in realistic
devices. We have developed methods to determine the gate voltage to energy
conversion accurately in the different regimes of dotlead tunnel couplings and
demonstrate strong variations of the conversion factors. Our concepts can
easily be extended to triple quantum dots or even larger arrays.

The energy relaxation channels of hot electrons far from thermal equilibrium
in a degenerate twodimensional electron system are investigated in transport
experiments in a mesoscopic threeterminal device. We observe a transition from
two dimensions at zero magnetic field to quasionedimensional scattering of
the hot electrons in a strong magnetic field. In the twodimensional case
electronelectron scattering is the dominant relaxation mechanism, while the
emission of optical phonons becomes more and more important as the magnetic
field is increased. The observation of up to 11 optical phonons emitted per hot
electron allows us to determine the onset energy of LO phonons in GaAs at
cryogenic temperatures with a high precision, $\eph=36.0\pm0.1\,$meV. Numerical
calculations of electronelectron scattering and the emission of optical
phonons underline our interpretation in terms of a transition to
onedimensional dynamics.

A threeterminal device based on a twodimensional electron system is
investigated in the regime of nonequilibrium transport. Excited electrons
scatter with the cold Fermi sea and transfer energy and momentum to other
electrons. A geometry analogous to a water jet pump is used to create a jet
pump for electrons. Because of its phenomenological similarity we name the
observed behavior "electronic Venturi effect".

We explore the acoustic phononbased interaction between two neighboring
coplanar circuits containing semiconductor quantum point contacts in a
perpendicular magnetic field B. In a dragtype experiment, a current flowing in
one of the circuits (unbiased) is measured in response to an external current
in the other. In moderate B the sign of the induced current is determined
solely by the polarity of B. This indicates that the spatial regions where the
phonon emission/reabsorption is efficient are controlled by magnetic field. The
results are interpreted in terms of nonequilibrium transport via skipping
orbits in twodimensional electron system.

Timeresolved electron dynamics in coupled quantum dots is directly observed
by a pulsedgate technique. While individual gate voltages are modulated with
periodic pulse trains, average charge occupations are measured with a nearby
quantum point contact as detector. A key component of our setup is a sample
holder optimized for broadband radio frequency applications. Our setup can
detect displacements of single electrons on time scales well below a
nanosecond. Tunneling rates through individual barriers and relaxation times
are obtained by using a rate equation model. We demonstrate the full
characterization of a tunable double quantum dot using this technique, which
could also be used for coherent charge qubit control.

Scattering of otherwise ballistic electrons far from equilibrium is
investigated in a cold twodimensional electron system. The interaction between
excited electrons and the degenerate Fermi liquid induces a positive charge in
a nanoscale region which would be negatively charged for diffusive transport at
local thermal equilibrium. In a threeterminal device we observe avalanche
amplification of electrical current, resulting in a situation comparable to the
Venturi effect in hydrodynamics. Numerical calculations using a random phase
approximation are in agreement with our data and suggest Coulomb interaction as
the dominant scattering mechanism.

We present an electrostatically defined fewelectron double quantum dot (QD)
realized in a molecular beam epitaxy grown Si/SiGe heterostructure. Transport
and charge spectroscopy with an additional QD as well as pulsedgate
measurements are demonstrated. We discuss technological challenges specific for
siliconbased heterostructures and the effect of a comparably large effective
electron mass on transport properties and tunability of the double QD. Charge
noise, which might be intrinsically induced due to strainengineering is proven
not to affect the stable operation of our device as a spin qubit. Our results
promise the suitability of electrostatically defined QDs in Si/SiGe
heterostructures for quantum information processing.

Quantum point contacts (QPCs) are commonly employed to capacitively detect
the charge state of coupled quantum dots (QD). An indirect backaction of a
biased QPC onto a double QD laterally defined in a GaAs/AlGaAs heterostructure
is observed. Energy is emitted by nonequilibrium charge carriers in the leads
of the biased QPC. Part of this energy is absorbed by the double QD where it
causes charge fluctuations that can be observed under certain conditions in its
stability diagram. By investigating the spectrum of the absorbed energy, we
identify both acoustic phonons and Coulomb interaction being involved in the
backaction, depending on the geometry and coupling constants.

An asymmetric breakdown of the integer quantized Hall effect is
investigated. This rectification effect is observed as a function of the
current value and its direction in conjunction with an asymmetric lateral
confinement potential defining the Hallbar. Our electrostatic definition of
the Hallbar via Schottkygates allows a systematic control of the steepness of
the confinement potential at the edges of the Hallbar. A softer edge (flatter
confinement potential) results in more stable Hallplateaus, i.e. a breakdown
at a larger current density. For one soft and one hard edge the breakdown
current depends on the current direction, resembling rectification. This
nonlinear magnetotransport effect confirms the predictions of an emerging
screening theory of the IQHE.

We present a versatile design of freely suspended quantum point contacts with
particular large onedimensional subband quantization energies of up to 10meV.
The nanoscale bridges embedding a twodimensional electron system are
fabricated from AlGaAs/GaAs heterostructures by electronbeam lithography and
etching techniques. Narrow constrictions define quantum point contacts that are
capacitively controlled via local inplane side gates. Employing transport
spectroscopy, we investigate the transition from electrostatic subbands to
Landauquantization in a perpendicular magnetic field. The large subband
quantization energies allow us to utilize a wide magnetic field range and
thereby observe a large exchange splitted spingap of the two lowest
Landaulevels.

Experimental and theoretical investigations on the integer quantized Hall
effect in gate defined narrow Hall bars are presented. At low electron mobility
the classical (high temperature) Hall resistance line RH(B) cuts through the
center of all Hall plateaus. In contrast, for our high mobility samples the
intersection point, at even filling factors \nu = 2; 4 ..., is clearly shifted
towards larger magnetic fields B. This asymmetry is in good agreement with
predictions of the screening theory, i. e. taking Coulomb interaction into
account. The observed effect is directly related to the formation of
incompressible strips in the Hall bar. The spinsplit plateau at \nu= 1 is
found to be almost symmetric regardless of the mobility. We explain this within
the socalled effective gmodel.

Interactions between mesoscopic devices induced by interface acoustic phonons
propagating in the plane of a twodimensional electron system (2DES) are
investigated by phononspectroscopy. In our experiments ballistic electrons
injected from a biased quantum point contact emit phonons and a portion of them
are reabsorbed exciting electrons in a nearby degenerate 2DES. We perform
energy spectroscopy on these excited electrons employing a tunable
electrostatic barrier in an electrically separate and unbiased detector
circuit. The transferred energy is found to be bounded by a maximum value
corresponding to Fermilevel electrons excited and backscattered by absorbing
interface phonons. Our results imply that phononmediated interaction plays an
important role for the decoherence of solidstatebased quantum circuits.

We report on the realization and topgating of a twodimensional electron
system in a nuclear spin free environment using 28Si and 70Ge source material
in molecular beam epitaxy. Electron spin decoherence is expected to be
minimized in nuclear spinfree materials, making them promising hosts for
solidstate based quantum information processing devices. The twodimensional
electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density
of 4.6E11 cm2 at low temperatures. Feasibility of reliable gating is
demonstrated by transport through splitgate structures realized with palladium
Schottky topgates which effectively control the twodimensional electron
system underneath. Our work forms the basis for the realization of an
electrostatically defined quantum dot in a nuclear spin free environment.

We briefly overview our recent results on nonequilibrium interactions between
neighboring electrically isolated nanostructures. One of the nanostructures is
represented by an externally biased quantum point contact (driveQPC), which is
used to supply energy quanta to the second nanostructure (detector). Absorption
of these nonequilibrium quanta of energy generates a dccurrent in the
detector, or changes its differential conductance. We present results for a
double quantum dot, a single quantum dot or a second QPC placed in the detector
circuit. In all three cases a detection of quanta with energies up to ~1 meV is
possible for bias voltages across the driveQPC in the mV range. The results
are qualitatively consistent with an energy transfer mechanism based on
nonequilibrium acoustic phonons.

We report on optically induced transport phenomena in freely suspended
channels containing a twodimensional electron gas (2DEG). The submicron
devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques.
The photoresponse of the devices can be understood in terms of the combination
of photogating and a photodoping effect. The hereby enhanced electronic
conductance exhibits a time constant in the range of one to ten milliseconds.