• A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,\mu \mathrm{m}$ and $7.99\pm0.21\,\mu \mathrm{m}$ along the $100\,\mu \mathrm{m}$ and $150\,\mu \mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
• The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $\mu$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
• ### Mechanical Design and Material Budget of the CMS Barrel Pixel Detector(0904.4761)

April 30, 2009 hep-ex, physics.ins-det
The Compact Muon Solenoid experiment at the Large Hadron Collider at CERN includes a silicon pixel detector as its innermost component. Its main task is the precise reconstruction of charged particles close to the primary interaction vertex. This paper gives an overview of the mechanical requirements and design choices for the barrel pixel detector. The distribution of material in the detector as well as its description in the Monte Carlo simulation are discussed in detail.
• ### Building CMS Pixel Barrel Detectur Modules(physics/0702181)

Feb. 21, 2007 physics.ins-det
For the barrel part of the CMS pixel tracker about 800 silicon pixel detector modules are required. The modules are bump bonded, assembled and tested at the Paul Scherrer Institute. This article describes the experience acquired during the assembly of the first ~200 modules.
• ### CMS Barrel Pixel Detector Overview(physics/0702182)

Feb. 21, 2007 physics.ins-det
The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of the pixel barrel detector, its mechanical support structure, electronics components, services and its expected performance.
• ### Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI(physics/0510021)

Jan. 6, 2006 physics.ins-det
The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a second reflow is performed for self alignment and obtaining a high mechanical strength. For the placement of the chips a manual and an automatic machine was constructed. The former is very flexible in handling different chip and module geometries but has a limited throughput while the latter features a much higher grade of automatisation and is therefore much more suited for producing hundreds of modules with a well defined geometry. The reliability of this process was proven by the successful construction of the PILATUS detector. The construction of PILATUS 6M (60 modules) and the CMS pixel barrel (roughly 800 modules) will start in 2005.