• ### Shubnikov-de Haas oscillations in p and n-type topological insulator (Bi$_{x}$Sb$_{1-x}$)$_{2}$Te$_{3}$(1701.00137)

We show Shubnikov-de Haas oscillations in topological insulator (Bi$_{x}$Sb$_{1-x}$)$_{2}$Te$_{3}$ films whose carrier type is p-type (x = 0.29, 0.34) and n-type (x = 0.42). The physical properties such as the Berry phase, mobility, and the scattering time are significantly changed by tuning the Fermi-level position with the concentration x. The Landau-level fan diagram in the sample with x = 0.42 showed the $\pi$ Berry phase and its mobility was as high as 17,000 cm$^{2}$/V/s, whereas the others had the 2$\pi$ Berry phase and much lower mobility. This suggests that because the bulk band of the sample with x = 0.42 does not cross the Fermi level, it becomes bulk insulating, resulting in the topological surface-state dominating transport. Thus, we can switch sample properties from degenerate to bulk insulating by tuning the concentration x, which is consistent with results of angle-resolved photoemission spectroscopy.
• ### Berry phase shift from 2 $\pi$ to $\pi$ in Bilayer graphene by Li-intercalation and sequential desorption(1701.03936)

We have found that the Berry phase of bilayer graphene becomes from 2$\pi$ estimated by Shubnikov-de Haas oscillations when the A-B stacked pristine bilayer graphene experiences the Li-intercalation and sequential Li-desorption process in ultrahigh vacuum. Furthermore, the mobility of such processed bilayer graphene increases around four times larger, ~ 8,000 cm2/V$\cdot$s, than that of the pristine bilayer graphene. This is mainly due to increment of the scattering time and decrement of the cyclotron mass, which can be interpreted as a result of the change of the stacking structure of bilayer graphene from A-B to A-A, corresponding to a change from the parabolic to the linear band dispersion.