• ### Experimental observation of bulk nodal lines and electronic surface states in ZrB$_2$(1805.00827)

Topological nodal-line semimetals are characterized by degenerate bulk quasiparticle states extending in one dimension with topologically protected surface states (SS). Breaking a certain protecting symmetry turns this system into a Dirac semimetal or Weyl semimetal that hosts zero-dimensional isolated nodal points. Recent advances in band theory predicted a new type of nodal line in AlB$_2$-type structure diborides. Here, we report an experimental realization of nodal-line fermions and associated SSs near the Fermi energy in ZrB$_2$ by angle-resolved photoemission spectroscopy combined with first-principles calculations. The Dirac nodal lines in ZrB$_2$ wind into two groups of nodal rings, which are linked together along the $\Gamma$-$K$ direction. We further observe a distinct SS connecting to each nodal line, indicative of the nontrivial topological nature of the bulk nodal lines. Therefore, our results provide convincing experimental evidence of the nodal-line semimetal states in ZrB$_2$ both in the bulk and on the surface, suggesting a remarkable system for discovering unique phenomena induced by nodal-line fermions.
• ### Large intrinsic anomalous Hall effect in half-metallic ferromagnet Co3Sn2S2 with magnetic Weyl fermions(1712.09947)

The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspect in condensed matter physics and has been controversial for a long time. Recent studies indicate that the intrinsic AHE is closely related to the Berry curvature of occupied electronic states. In a magnetic Weyl semimetal with broken time-reversal symmetry, there are significant contributions on Berry curvature around Weyl nodes, which would lead to a large intrinsic AHE. Here, we report the large intrinsic AHE in the half-metallic ferromagnet Co3Sn2S2 single crystal. By systematically mapping out the electronic structure of Co3Sn2S2 theoretically and experimentally, the large intrinsic AHE should originate from the Weyl fermions near the Fermi energy. Furthermore, the intrinsic anomalous Hall conductivity depends linearly on the magnetization and this can be attributed to the sharp decrease of magnetization and the change of topological characteristics.
• ### Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator(1704.02928)

April 10, 2017 cond-mat.mtrl-sci
Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.
• ### Magnetoresistance and Shubnikov-de Hass oscillation in YSb(1604.05912)

YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing magnetic field, finally resulting in a metal-to-insulator-like transition. With temperature further decreased, a resistivity plateau emerges after the insulator-like regime. At low temperature (2.5 K) and high field (14 T), the transverse magnetoresistance (MR) is quite large (3.47 $\times 10^4\%$ ). In addition, Shubnikov-de Haas (SdH) oscillation has also been observed in YSb. Periodic behavior of the oscillation amplitude reveals the related information about Fermi surface and two major oscillation frequencies can be obtained from the FFT spectra of the oscillations. The trivial Berry phase extracted from SdH oscillation, band structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrate that YSb is a topologically trivial material.
• ### FeTe$_{1-x}$Se$_{x}$ monolayer films: towards the realization of high-temperature connate topological superconductivity(1701.07728)

We performed angle-resolved photoemission spectroscopy studies on a series of FeTe$_{1-x}$Se$_{x}$ monolayer films grown on SrTiO$_{3}$. The superconductivity of the films is robust and rather insensitive to the variations of the band position and effective mass caused by the substitution of Se by Te. However, the band gap between the electron- and hole-like bands at the Brillouin zone center decreases towards band inversion and parity exchange, which drive the system to a nontrivial topological state predicted by theoretical calculations. Our results provide a clear experimental indication that the FeTe$_{1-x}$Se$_{x}$ monolayer materials are high-temperature connate topological superconductors in which band topology and superconductivity are integrated intrinsically.
• ### Interplay between multiple charge-density waves and the relationship with superconductivity in Pd$_x$HoTe$_{3}$(1601.01564)

HoTe$_{3}$, a member of the rare-earth tritelluride ($R$Te$_{3}$) family, and its Pd-intercalated compounds, Pd$_x$HoTe$_{3}$, where superconductivity (SC) sets in as the charge-density wave (CDW) transition is suppressed by the intercalation of a small amount of Pd, are investigated using angle-resolved photoemission spectroscopy (ARPES) and electrical resistivity. Two incommensurate CDWs with perpendicular nesting vectors are observed in HoTe$_{3}$ at low temperatures. With a slight Pd intercalation ($x$ = 0.01), the large CDW gap decreases and the small one increases. The momentum dependence of the gaps along the inner Fermi surface (FS) evolves from orthorhombicity to near tetragonality, manifesting the competition between two CDW orders. At $x$ = 0.02, both CDW gaps decreases with the emergence of SC. Further increasing the content of Pd for $x$ = 0.04 will completely suppress the CDW instabilities and give rise to the maximal SC order. The evolution of the electronic structures and electron-phonon couplings (EPCs) of the multiple CDWs upon Pd intercalation are carefully scrutinized. We discuss the interplay between multiple CDW orders, and the competition between CDW and SC in detail.
• ### Sudden gap-closure across the topological phase transition in Bi$_{2-x}$In$_{x}$Se$_{3}$(1503.07674)

Sept. 19, 2016 cond-mat.str-el
The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band structures throughout the transition. The robust surface state and the bulk gap size ($\sim$ 0.50 eV) show no significant change upon doping for $x$ = 0.05, 0.10 and 0.175. At $x$ $\geq$ 0.225, the surface state completely disappears and the bulk gap size increases, suggesting a sudden gap-closure and topological phase transition around $x \sim$ 0.175$-$0.225. We discuss the underlying mechanism of the phase transition, proposing that it is governed by the combined effect of spin-orbit coupling and interactions upon band hybridization. Our study provides a new venue to investigate the mechanism of the topological phase transition induced by non-magnetic impurities.
• ### Correlation-induced self-doping in intercalated iron-pnictide superconductor Ba2Ti2Fe2As4O(1409.4090)

Sept. 14, 2014 cond-mat.supr-con
The electronic structure of the intercalated iron-based superconductor Ba2Ti2Fe2As4O (Tc - 21.5 K) has been investigated by using angle-resolved photoemission spectroscopy and combined local density approximation and dynamical mean field theory calculations. The electronic states near the Fermi level are dominated by both the Fe 3d and Ti 3d orbitals, indicating that the spacing layers separating different FeAs layers are also metallic. By counting the enclosed volumes of the Fermi surface sheets, we observe a large self-doping effect, i.e. 0.25 electrons per unit cell are transferred from the FeAs layer to the Ti2As2O layer, leaving the FeAs layer in a hole-doped state. This exotic behavior is successfully reproduced by our dynamical mean field calculations, in which the self-doping effect is attributed to the electronic correlations in the Fe 3d shell. Our work provides an alternative route of effective doping without element substitution for iron-based superconductors.
• ### Spectro-microscopy of single and multi-layer graphene supported by a weakly interacting substrate(0806.0355)

June 2, 2008 cond-mat.mtrl-sci
We report measurements of the electronic structure and surface morphology of exfoliated graphene on an insulating substrate using angle-resolved photoemission and low energy electron diffraction. Our results show that although exfoliated graphene is microscopically corrugated, the valence band retains a massless fermionic dispersion, with a Fermi velocity of ~10^6 m/s. We observe a close relationship between the morphology and electronic structure, which suggests that controlling the interaction between graphene and the supporting substrate is essential for graphene device applications.
• ### Inhomogeneous d-wave superconducting state of a doped Mott insulator(cond-mat/0107004)

Recent scanning tunneling microscope (STM) measurements discovered remarkable electronic inhomogeneity, i.e. nano-scale spatial variations of the local density of states (LDOS) and the superconducting energy gap, in the high-Tc superconductor BSCCO. Based on the experimental findings we conjectured that the inhomogeneity arises from variations in local oxygen doping level and may be generic of doped Mott insulators which behave rather unconventionally in screening the dopant ionic potentials at atomic scales comparable to the short coherence length. Here, we provide theoretical support for this picture. We study a doped Mott insulator within a generalized t-J model, where doping is accompanied by ionic Coulomb potentials centered in the BiO plane. We calculate the LDOS spectrum, the integrated LDOS, and the local superconducting gap, make detailed comparisons to experiments, and find remarkable agreement with the experimental data. We emphasize the unconventional screening in a doped Mott insulator and show that nonlinear screening dominates at nano-meter scales which is the origin of the electronic inhomogeneity. It leads to strong inhomogeneous redistribution of the local hole density and promotes the notion of a local doping concentration. We find that the inhomogeneity structure manifests itself at all energy scales in the STM tunneling differential conductance, and elucidate the similarity and the differences between the data obtained in the constant tunneling current mode and the same data normalized to reflect constant tip-to-sample distance. We also discuss the underdoped case where nonlinear screening of the ionic potential turns the spatial electronic structure into a percolative mixture of patches with smaller pairing gaps embedded in a background with larger gaps to single particle excitations.