
Topological nodalline semimetals are characterized by degenerate bulk
quasiparticle states extending in one dimension with topologically protected
surface states (SS). Breaking a certain protecting symmetry turns this system
into a Dirac semimetal or Weyl semimetal that hosts zerodimensional isolated
nodal points. Recent advances in band theory predicted a new type of nodal line
in AlB$_2$type structure diborides. Here, we report an experimental
realization of nodalline fermions and associated SSs near the Fermi energy in
ZrB$_2$ by angleresolved photoemission spectroscopy combined with
firstprinciples calculations. The Dirac nodal lines in ZrB$_2$ wind into two
groups of nodal rings, which are linked together along the $\Gamma$$K$
direction. We further observe a distinct SS connecting to each nodal line,
indicative of the nontrivial topological nature of the bulk nodal lines.
Therefore, our results provide convincing experimental evidence of the
nodalline semimetal states in ZrB$_2$ both in the bulk and on the surface,
suggesting a remarkable system for discovering unique phenomena induced by
nodalline fermions.

The origin of anomalous Hall effect (AHE) in magnetic materials is one of the
most intriguing aspect in condensed matter physics and has been controversial
for a long time. Recent studies indicate that the intrinsic AHE is closely
related to the Berry curvature of occupied electronic states. In a magnetic
Weyl semimetal with broken timereversal symmetry, there are significant
contributions on Berry curvature around Weyl nodes, which would lead to a large
intrinsic AHE. Here, we report the large intrinsic AHE in the halfmetallic
ferromagnet Co3Sn2S2 single crystal. By systematically mapping out the
electronic structure of Co3Sn2S2 theoretically and experimentally, the large
intrinsic AHE should originate from the Weyl fermions near the Fermi energy.
Furthermore, the intrinsic anomalous Hall conductivity depends linearly on the
magnetization and this can be attributed to the sharp decrease of magnetization
and the change of topological characteristics.

Topological crystalline insulators have been recently predicted and observed
in rocksalt structure SnSe $\{111\}$ thin films. Previous studies have
suggested that the Seterminated surface of this thin film with hydrogen
passivation, has a reduced surface energy and is thus a preferred
configuration. In this paper, synchrotronbased angleresolved photoemission
spectroscopy, along with density functional theory calculations, are used to
demonstrate conclusively that a rocksalt SnSe $\{111\}$ thin film
epitaxiallygrown on \ce{Bi2Se3} has a stable Snterminated surface. These
observations are supported by low energy electron diffraction (LEED)
intensityvoltage measurements and dynamical LEED calculations, which further
show that the Snterminated SnSe $\{111\}$ thin film has undergone a surface
structural relaxation of the interlayer spacing between the Sn and Se atomic
planes. In sharp contrast to the Seterminated counterpart, the observed Dirac
surface state in the Snterminated SnSe $\{111\}$ thin film is shown to yield a
high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism
of engineering the Dirac surface state of topological materials by tuning the
surface configuration.

YSb crystals are grown and the transport properties under magnetic field are
measured. The resistivity exhibits metallic behavior under zero magnetic field
and the low temperature resistivity shows a clear upturn once a moderate
magnetic field is applied. The upturn is greatly enhanced by increasing
magnetic field, finally resulting in a metaltoinsulatorlike transition. With
temperature further decreased, a resistivity plateau emerges after the
insulatorlike regime. At low temperature (2.5 K) and high field (14 T), the
transverse magnetoresistance (MR) is quite large (3.47 $\times 10^4\%$ ). In
addition, Shubnikovde Haas (SdH) oscillation has also been observed in YSb.
Periodic behavior of the oscillation amplitude reveals the related information
about Fermi surface and two major oscillation frequencies can be obtained from
the FFT spectra of the oscillations. The trivial Berry phase extracted from SdH
oscillation, band structure revealed by angleresolved photoemission
spectroscopy (ARPES) and firstprinciples calculations demonstrate that YSb is
a topologically trivial material.

We performed angleresolved photoemission spectroscopy studies on a series of
FeTe$_{1x}$Se$_{x}$ monolayer films grown on SrTiO$_{3}$. The
superconductivity of the films is robust and rather insensitive to the
variations of the band position and effective mass caused by the substitution
of Se by Te. However, the band gap between the electron and holelike bands at
the Brillouin zone center decreases towards band inversion and parity exchange,
which drive the system to a nontrivial topological state predicted by
theoretical calculations. Our results provide a clear experimental indication
that the FeTe$_{1x}$Se$_{x}$ monolayer materials are hightemperature connate
topological superconductors in which band topology and superconductivity are
integrated intrinsically.

HoTe$_{3}$, a member of the rareearth tritelluride ($R$Te$_{3}$) family, and
its Pdintercalated compounds, Pd$_x$HoTe$_{3}$, where superconductivity (SC)
sets in as the chargedensity wave (CDW) transition is suppressed by the
intercalation of a small amount of Pd, are investigated using angleresolved
photoemission spectroscopy (ARPES) and electrical resistivity. Two
incommensurate CDWs with perpendicular nesting vectors are observed in
HoTe$_{3}$ at low temperatures. With a slight Pd intercalation ($x$ = 0.01),
the large CDW gap decreases and the small one increases. The momentum
dependence of the gaps along the inner Fermi surface (FS) evolves from
orthorhombicity to near tetragonality, manifesting the competition between two
CDW orders. At $x$ = 0.02, both CDW gaps decreases with the emergence of SC.
Further increasing the content of Pd for $x$ = 0.04 will completely suppress
the CDW instabilities and give rise to the maximal SC order. The evolution of
the electronic structures and electronphonon couplings (EPCs) of the multiple
CDWs upon Pd intercalation are carefully scrutinized. We discuss the interplay
between multiple CDW orders, and the competition between CDW and SC in detail.

The phase transition from a topological insulator to a trivial band insulator
is studied by angleresoled photoemission spectroscopy on
Bi$_{2x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete
evolution of the bulk band structures throughout the transition. The robust
surface state and the bulk gap size ($\sim$ 0.50 eV) show no significant change
upon doping for $x$ = 0.05, 0.10 and 0.175. At $x$ $\geq$ 0.225, the surface
state completely disappears and the bulk gap size increases, suggesting a
sudden gapclosure and topological phase transition around $x \sim$
0.175$$0.225. We discuss the underlying mechanism of the phase transition,
proposing that it is governed by the combined effect of spinorbit coupling and
interactions upon band hybridization. Our study provides a new venue to
investigate the mechanism of the topological phase transition induced by
nonmagnetic impurities.

The electronic structure of the intercalated ironbased superconductor
Ba2Ti2Fe2As4O (Tc  21.5 K) has been investigated by using angleresolved
photoemission spectroscopy and combined local density approximation and
dynamical mean field theory calculations. The electronic states near the Fermi
level are dominated by both the Fe 3d and Ti 3d orbitals, indicating that the
spacing layers separating different FeAs layers are also metallic. By counting
the enclosed volumes of the Fermi surface sheets, we observe a large
selfdoping effect, i.e. 0.25 electrons per unit cell are transferred from the
FeAs layer to the Ti2As2O layer, leaving the FeAs layer in a holedoped state.
This exotic behavior is successfully reproduced by our dynamical mean field
calculations, in which the selfdoping effect is attributed to the electronic
correlations in the Fe 3d shell. Our work provides an alternative route of
effective doping without element substitution for ironbased superconductors.

We report measurements of the electronic structure and surface morphology of
exfoliated graphene on an insulating substrate using angleresolved
photoemission and low energy electron diffraction. Our results show that
although exfoliated graphene is microscopically corrugated, the valence band
retains a massless fermionic dispersion, with a Fermi velocity of ~10^6 m/s. We
observe a close relationship between the morphology and electronic structure,
which suggests that controlling the interaction between graphene and the
supporting substrate is essential for graphene device applications.

Recent scanning tunneling microscope (STM) measurements discovered remarkable
electronic inhomogeneity, i.e. nanoscale spatial variations of the local
density of states (LDOS) and the superconducting energy gap, in the highTc
superconductor BSCCO. Based on the experimental findings we conjectured that
the inhomogeneity arises from variations in local oxygen doping level and may
be generic of doped Mott insulators which behave rather unconventionally in
screening the dopant ionic potentials at atomic scales comparable to the short
coherence length. Here, we provide theoretical support for this picture. We
study a doped Mott insulator within a generalized tJ model, where doping is
accompanied by ionic Coulomb potentials centered in the BiO plane. We calculate
the LDOS spectrum, the integrated LDOS, and the local superconducting gap, make
detailed comparisons to experiments, and find remarkable agreement with the
experimental data. We emphasize the unconventional screening in a doped Mott
insulator and show that nonlinear screening dominates at nanometer scales
which is the origin of the electronic inhomogeneity. It leads to strong
inhomogeneous redistribution of the local hole density and promotes the notion
of a local doping concentration. We find that the inhomogeneity structure
manifests itself at all energy scales in the STM tunneling differential
conductance, and elucidate the similarity and the differences between the data
obtained in the constant tunneling current mode and the same data normalized to
reflect constant tiptosample distance. We also discuss the underdoped case
where nonlinear screening of the ionic potential turns the spatial electronic
structure into a percolative mixture of patches with smaller pairing gaps
embedded in a background with larger gaps to single particle excitations.