• ### Perfect selective alignment of nitrogen-vacancy center in diamond(1403.5057)

March 20, 2014 cond-mat.mes-hall
Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To take advantage of the characteristics, the precise control of the orientation of the N-V axis in the lattice is essential. Here we show that the orientation of more than 99 % of the NV centers can be aligned along the [111]-axis by CVD homoepitaxial growth on (111)-substrates. We also discuss about mechanisms of the alignment. Our result enables a fourfold improvement in magnetic-field sensitivity and opens new avenues to the optimum design of NV center devices.
• ### Magneto-photoluminescence of charged excitons from MgZnO/ZnO heterojunctions(1302.1679)

Feb. 7, 2013 cond-mat.mtrl-sci
We report on the photoluminescence (PL) properties of MgZnO/ZnO heterojunctions grown by plasma-assisted molecular-beam epitaxy. Influence of the applied magnetic field (B) on the radiative recombination of the two-dimensional electron gas (2DEG) is investigated up to 54 T. An increase in magnetic field in the range of B <= 20 T results in a redshift in the PL. Abrupt lineshape changes in the PL spectra are observed at higher magnetic fields, in correlation with the integer quantum Hall states. We attempt to interpret these features using the conventional model for the 2DEG-related PL based on the transition between the 2DEG and a hole as well as a model taking a bound state effect into account, i.e., a charged exciton. The comparison about the adequateness of these models was made, being in favor of the charged exciton model.
• ### Precise calibration of Mg concentration in MgxZn1-xO thin films grown on ZnO substrates(1208.2074)

Aug. 10, 2012 cond-mat.mtrl-sci
The growth techniques for MgxZn1-xO thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of MgxZn1-xO thin films grown on ZnO substrates, ranging from the solubility limit of x ~ 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by X-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the MgxZn1-xO peak in standard laboratory equipment, and thus quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the MgxZn1-xO films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that X-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment.
• ### Ultrafast optical control of magnetization in EuO thin films(1207.6686)

July 28, 2012 cond-mat.mtrl-sci
All-optical pump-probe detection of magnetization precession has been performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the circularly-polarized light can be used to control the magnetization precession on an ultrafast time scale. This takes place within the 100 fs duration of a single laser pulse, through combined contribution from two nonthermal photomagnetic effects, i.e., enhancement of the magnetization and an inverse Faraday effect. From the magnetic field dependences of the frequency and the Gilbert damping parameter, the intrinsic Gilbert damping coefficient is evaluated to be {\alpha} \approx 3\times10^-3.
• ### Ultrafast Time-Resolved Faraday Rotation in EuO Thin Films(1205.2818)

June 22, 2012 cond-mat.mtrl-sci
We have investigated the ultrafast spin dynamics in EuO thin films by time-resolved Faraday rotation spectroscopy. The photoinduced magnetization is found to be increased in a transient manner, accompanied with subsequent demagnetization. The dynamical magnetization enhancement showed a maximum slightly below the Curie temperature with prolonged tails toward both lower and higher temperatures and dominates the demagnetization counterpart at 55 K. The magnetization enhancement component decays in ~1 ns. The realization of the transient collective ordering is attributable to the enhancement of the f-d exchange interaction.
• ### Monte-Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures(cond-mat/0602117)

Feb. 6, 2006 cond-mat.mtrl-sci
Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a qualitatively reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening for the case of linewidth. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.
• ### Majority-Carrier Mobilities in Undoped and \textit{n}-type Doped ZnO Epitaxial Layers(cond-mat/0510340)

Oct. 13, 2005 cond-mat.mtrl-sci
Transparent and conductive ZnO:Ga thin films are prepared by laser molecular-beam epitaxy. Their electron properties were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. In the experimental mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. Several types of scattering centers including ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. The scattering mechanism is explained in terms of inter-grain potential barriers and charged impurities. A comparison between theoretical results and experimental data is made.
• ### Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga(cond-mat/0510166)

Oct. 7, 2005 cond-mat.mtrl-sci
Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.
• ### Analysis on reflection spectra in strained ZnO thin films(cond-mat/0510167)

Oct. 7, 2005 cond-mat.mtrl-sci
Thin films of laser molecular-beam epitaxy grown ZnO films were studied with respect to their optical properties. 4-K reflectivity was used to analyze various samples grown at different biaxial in-plane strain. The spectra show two structures at 3.37 eV corresponding to the A-free exciton transition and at 3.38 eV corresponding to the B-free exciton transition. Theoretical reflectivity spectra were calculated using the spatial dispersion model. Thus, the transverse energies, the longitudinal transversal splitting (ELT,), the oscillator strengths, and the damping parameters were determined for both the A- and B-free excitons of ZnO. As a rough trend, the strain dependence of the energy E_LT for the A-excitons is characterized by a negatively-peaking behavior with a minimum around the zero strain, while ELT for the B-excitons is an increasing function of the strain field values.
• ### Electron transport in ZnO thin films(cond-mat/0507009)

July 1, 2005 cond-mat.mtrl-sci
Epitaxial, n-type ZnO films grown by a laser molecular-beam epitaxy method were investigated by the temperature-dependent Hall-effect technique. The 300-K carrier concentration and mobility were about $n_s \sim 10^{16}$ cm$^{-3}$ and 440 cm$^{2}$/Vs, respectively. Transport characteristics are calculated by solving the Boltzmann transport equation using a variational method. Mobility limit of 430 cm$^{2}$/Vs was calculated at 300 K. The temperature dependence of the mobility for an undoped film is calculated and agrees favorably well with experimental data if physical parameters are chosen so as to approach to those. In the experimental mobility vs concentration' curve, unusual phenomenon was observed, i.e., mobilities at $n_s \sim 5\times$ 10$^{18}$ cm$^{-3}$ are significantly smaller than those at higher densities above $\sim 10^{20}$ cm$^{-3}$. It is qualitatively explained in terms of electron-plasmon interaction.
• ### Exciton-optical-phonon coupling: comparison with experiments for ZnO quantum wells(cond-mat/0503386)

The temperature-dependent linewidths of excitons in ZnO quantum wells were studied by measuring absorption spectra from 5 K to room temperature. We deduced experimentally the exciton-longitudinal-optical (LO) phonon coupling strength, which showed reduction of coupling with decrease in well width. This reduction was explained in terms of confinement-induced enhancement of the excitonic binding energy by comparing the binding energy dependence of calculated coupling strength.
• ### Room-temperature stimulated emission from ZnO multiple quantum wells grown on lattice-matched substrates(cond-mat/0412232)

Dec. 11, 2004 cond-mat.mtrl-sci
The optical properties of ZnO quantum wells, which have potential application of short-wavelength semiconductor laser utilizing a high-density excitonic effect, were investigated. Stimulated emission of excitons was observed at temperatures well above room temperature due to the adoption of the lattice-matched substrates. The mechanism of stimulated emission from ZnO quantum wells is discussed in this chapter.
• ### Optical Properties of Excitons in ZnO-based Quantum Well Heterostructures(cond-mat/0410120)

Oct. 10, 2004 cond-mat.mtrl-sci
Recently the developments in the field of II-VI-oxides have been spectacular. Various epitaxial methods has been used to grow epitaxial ZnO layers. Not only epilayers but also sufficiently good-quality multiple quantum wells (MQWs) have also been grown by laser molecular-beam epitaxy (laser-MBE). We discuss mainly the experimental aspect of the optical properties of excitons in ZnO-based MQW heterostructures. Systematic temperature-dependent studies of optical absorption and photoluminescence in these MQWs were used to evaluate the well-width dependence and the composition dependence of the major excitonic properties. Based on these data, the localization of excitons, the influence of exciton-phonon interaction, and quantum-confined Stark effects are discussed. The optical spectra of dense excitonic systems are shown to be determined mainly by the interaction process between excitons and biexcitons. The high-density excitonic effects play a role for the observation of room-temperature stimulated emission in the ZnO MQWs. The binding energies of exciton and biexciton are enhanced from the bulk values, as a result of quantum-confinement effects.
• ### Gallium concentration dependence of room-temperature near-bandedge luminescence in n-type ZnO:Ga(cond-mat/0406211)

June 9, 2004 cond-mat.mtrl-sci
We investigated the optical properties of epitaxial \textit{n}-type ZnO films grown on lattice-matched ScAlMgO$_4$ substrates. As the Ga doping concentration increased up to $6 \times 10^{20}$ cm$^{-3}$, the absorption edge showed a systematic blueshift, consistent with the Burstein-Moss effect. A bright near-bandedge photoluminescence (PL) could be observed even at room temperature, the intensity of which increased monotonically as the doping concentration was increased except for the highest doping level. It indicates that nonradiative transitions dominate at a low doping density. Both a Stokes shift and broadening in the PL band are monotonically increasing functions of donor concentration, which was explained in terms of potential fluctuations caused by the random distribution of donor impurities.
• ### Effect of growth conditions on optical properties of CdSe/ZnSe single quantum dots(cond-mat/0211307)

Nov. 15, 2002 cond-mat.mtrl-sci
In this work, we have investigated the optical properties of two samples of CdSe quantum dots by using submicro-photoluminescence spectroscopy. The effect of vicinal-surface GaAs substrates on their properties has been also assessed. The thinner sample, grown on a substrate with vicinal surface, includes only dots with a diameter of less than 10 nm (type A islands). Islands of an average diameter of about 16 nm (type B islands) that are related to a phase transition via a Stranski-Krastanow growth process are also distributed in the thicker sample grown on an oriented substrate. We have studied the evolution of lineshapes of PL spectra for these two samples by improving spatial resolution that was achieved using nanoapertures or mesa structures. It was found that the use of a substrate with the vicinal surface leads to the suppression of excitonic PL emitted from a wetting layer.