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We present a study of a CMOS test sensor which has been designed, fabricated
and characterised to investigate the parameters required for a binary readout
electromagnetic calorimeter. The sensors were fabricated with several
enhancements in addition to standard CMOS processing. Detailed simulations and
experimental results of the performance of the sensor are presented. The sensor
and pixels are shown to behave in accordance with expectations and the
processing enhancements are found to be essential to achieve the performance
required.
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Progress is reported on the development and testing of Monolithic Active
Pixel Sensors (MAPS) for a Si-W ECAL for the ILC. Using laser and source
setups, a first version of the sensor has been characterised through
measurements of the absolute gain calibration, noise and pedestal. The
pixel-to-pixel gain spread is 10%. Charge diffusion has been measured and found
to be compatible with simulation results. The charge collected by a single
pixel varies from 50% to 20% depending on where it is generated. After adding
detector effects to the Geant4 simulation of an ILC-like ECAL, using the
measured parameters, the energy resolution is found to be 35% higher than the
ideal resolution, but is still lower than the resolution obtained for an
equivalent analogue ECAL.
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In this paper we present a novel, quadruple well process developed in a
modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we
have added a deep P implant that can be used to form a deep P-well and provide
screening of N-wells from the P-doped epitaxial layer. This prevents the
collection of radiation-induced charge by unrelated N-wells, typically ones
where PMOS transistors are integrated. The design of a sensor specifically
tailored to a particle physics experiment is presented, where each 50mu pixel
has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the
INMAPS process and first experimental evidence of the effectiveness of this
process on charge collection is presented, showing a significant improvement in
efficiency.
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A novel design for a silicon-tungsten electromagnetic calorimeter is
described, based on Monolithic Active Pixel Sensors (MAPS). A test sensor with
a pixel size of 50x50 um2 has been fabricated in July 2007. The simulation of
the physical sensor is done using a detailed three-dimensional charge spread
algorithm. Physics studies of the sensor are done including a digitisation
algorithm taking into account the charge sharing, charge collection efficiency,
noise, and dead areas. The influence of the charge sharing effect is found to
be important and hence needs to be measured precisely.
We present a study of a CMOS test sensor which has been designed, fabricated and characterised to investigate the parameters required for a binary readout electromagnetic calorimeter. The sensors were fabricated with several enhancements in addition to standard CMOS processing. Detailed simulations and experimental results of the performance of the sensor are presented. The sensor and pixels are shown to behave in accordance with expectations and the processing enhancements are found to be essential to achieve the performance required.
Progress is reported on the development and testing of Monolithic Active Pixel Sensors (MAPS) for a Si-W ECAL for the ILC. Using laser and source setups, a first version of the sensor has been characterised through measurements of the absolute gain calibration, noise and pedestal. The pixel-to-pixel gain spread is 10%. Charge diffusion has been measured and found to be compatible with simulation results. The charge collected by a single pixel varies from 50% to 20% depending on where it is generated. After adding detector effects to the Geant4 simulation of an ILC-like ECAL, using the measured parameters, the energy resolution is found to be 35% higher than the ideal resolution, but is still lower than the resolution obtained for an equivalent analogue ECAL.
In this paper we present a novel, quadruple well process developed in a modern 0.18mu CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50mu pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.
A novel design for a silicon-tungsten electromagnetic calorimeter is described, based on Monolithic Active Pixel Sensors (MAPS). A test sensor with a pixel size of 50x50 um2 has been fabricated in July 2007. The simulation of the physical sensor is done using a detailed three-dimensional charge spread algorithm. Physics studies of the sensor are done including a digitisation algorithm taking into account the charge sharing, charge collection efficiency, noise, and dead areas. The influence of the charge sharing effect is found to be important and hence needs to be measured precisely.