Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the existence of unconventional zeroth Landau levels, as a unique hallmark of Weyl fermions which is highly related to chiral anomaly, remains elusive owing to the stringent experimental requirements. Here, we report the magneto-optical study of Landau quantization in Weyl semimetal NbAs. High magnetic fields drive the system towards the quantum limit which leads to the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes. As compared to other Landau levels, the zeroth chiral Landau level exhibits a distinct linear dispersion in z momentum direction and allows the optical transitions without the limitation of zero z momentum or square root of magnetic field evolution. The magnetic field dependence of the zeroth Landau levels further verifies the predicted particle-hole asymmetry of the Weyl cones. Meanwhile, the optical transitions from the normal Landau levels exhibit the coexistence of multiple carriers including an unexpected massive Dirac fermion, pointing to a more complex topological nature in inversion-symmetry-breaking Weyl semimetals. Our results provide insights into the Landau quantization of Weyl fermions and demonstrate an effective tool for studying complex topological systems.

Muon spin rotation and relaxation studies have been performed on a "111" family of iron-based superconductors NaFe_1-xNi_xAs. Static magnetic order was characterized by obtaining the temperature and doping dependences of the local ordered magnetic moment size and the volume fraction of the magnetically ordered regions. For x = 0 and 0.4 %, a transition to a nearly-homogeneous long range magnetically ordered state is observed, while for higher x than 0.4 % magnetic order becomes more disordered and is completely suppressed for x = 1.5 %. The magnetic volume fraction continuously decreases with increasing x. The combination of magnetic and superconducting volumes implies that a spatially-overlapping coexistence of magnetism and superconductivity spans a large region of the T-x phase diagram for NaFe_1-xNi_xAs . A strong reduction of both the ordered moment size and the volume fraction is observed below the superconducting T_C for x = 0.6, 1.0, and 1.3 %, in contrast to other iron pnictides in which one of these two parameters exhibits a reduction below TC, but not both. The suppression of magnetic order is further enhanced with increased Ni doping, leading to a reentrant non-magnetic state below T_C for x = 1.3 %. The reentrant behavior indicates an interplay between antiferromagnetism and superconductivity involving competition for the same electrons. These observations are consistent with the sign-changing s-wave superconducting state, which is expected to appear on the verge of microscopic coexistence and phase separation with magnetism. We also present a universal linear relationship between the local ordered moment size and the antiferromagnetic ordering temperature TN across a variety of iron-based superconductors. We argue that this linear relationship is consistent with an itinerant-electron approach, in which Fermi surface nesting drives antiferromagnetic ordering.

We investigate Cu-doped Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ with transport, magnetic susceptibility, and elastic neutron scattering measurements. In the heavily Cu-doped regime where long-range stripe-type antiferromagnetic order in BaFe$_2$As$_2$ is suppressed, Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ (0.145 $\leq x \leq$ 0.553) samples exhibit spin-glass-like behavior in magnetic susceptibility and insulating-like temperature dependence in electrical transport. Using elastic neutron scattering, we find stripe-type short-range magnetic order in the spin-glass region identified by susceptibility measurements. The persistence of short-range magnetic order over a large doping range in Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ likely arises from local arrangements of Fe and Cu that favor magnetic order, with Cu acting as vacancies relieving magnetic frustration and degeneracy. These results indicate locally broken four-fold rotational symmetry, suggesting that stripe-type magnetism is ubiquitous in iron pnictides.

Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation frequency and Hall plateau, we observe a Zeeman-related splitting and extract the Landau level index as well as sub-band number. Different from conventional two-dimensional systems, this unique quantum Hall effect may be related to the quantized version of Weyl orbits. Our results call for further investigations into the exotic quantum Hall states in the low-dimensional structure of topological semimetals.

We use neutron polarization analysis to study temperature dependence of the spin excitation anisotropy in BaFe$_2$As$_2$, which has a tetragonal-to-orthorhombic structural distortion at $T_s$ and antiferromagnetic (AF) phase transition at $T_N$ with ordered moments along the orthorhombic $a$-axis below $T_s\approx T_N\approx 136$ K. In the paramagnetic tetragonal state at 160 K, spin excitations are isotropic in spin space with $M_a=M_b=M_c$, where $M_a$, $M_b$, and $M_c$ are spin excitations polarized along the $a$, $b$, and $c$-axis directions of the orthorhombic lattice, respectively. On cooling towards $T_N$, significant spin excitation anisotropy with $M_a>M_b\approx M_c$ develops below 3 meV with a diverging $M_a$ at $T_N$. The in-plane spin excitation anisotropy in the tetragonal phase of BaFe$_2$As$_2$ is similar to those seen in the tetragonal phase of its electron and hole-doped superconductors, suggesting that spin excitation anisotropy is a direct probe of doping dependence of spin-orbit coupling and its connection to superconductivity in iron pnictides.

We use neutron scattering to study the electron-doped superconducting NaFe$_{0.985}$Co$_{0.015}$As ($T_c=14$ K), which has co-existing static antiferromagnetic (AF) order ($T_N=31$ K) and exhibits two neutron spin resonances ($E_{r1}\approx 3.5$ meV and $E_{r2}\approx 6$ meV) at the in-plane AF ordering wave vector ${\bf Q}_{\rm AF}={\bf Q}_{1}=(1,0)$ in reciprocal space. In the twinned state below the tetragonal-to-orthorhombic structural transition $T_s$, both resonance modes appear at ${\bf Q}_{1}$ but cannot be distinguished from ${\bf Q}_{2}=(0,1)$. By detwinning the single crystal with uniaxial pressure along the orthorhombic $b$-axis, we find that both resonances appear only at ${\bf Q}_{1}$ with vanishing intensity at ${\bf Q}_{2}$. Since electronic bands of the orbital $d_{xz}$ and $d_{yz}$ characters split below $T_s$ with the $d_{xz}$ band sinking $\sim10$ meV below the Fermi surface, our results indicate that the neutron spin resonances in NaFe$_{0.985}$Co$_{0.015}$As arise mostly from quasi-particle excitations between the hole and electron Fermi surfaces with the $d_{yz}$ orbital character.

We use neutron diffraction and muon spin relaxation to study the effect of in-plane uniaxial pressure on the antiferromagnetic (AF) orthorhombic phase in BaFe$_2$As$_2$ and its Co- and Ni-substituted members near optimal superconductivity. In the low temperature AF ordered state, uniaxial pressure necessary to detwin the orthorhombic crystals also increases the magnetic ordered moment, reaching an 11$\%$ increase under 40 MPa for BaFe$_{1.9}$Co$_{0.1}$As$_2$, and a 15$\%$ increase for BaFe$_{1.915}$Ni$_{0.085}$As$_2$. We also observe an increase of the AF ordering temperature ($T_N$) of about 0.25 K/MPa in all compounds, consistent with density functional theory calculations that reveal better Fermi surface nesting for itinerant electrons under uniaxial pressure. The doping dependence of the magnetic ordered moment is captured by combining dynamical mean field theory with density functional theory, suggesting that the pressure-induced moment increase near optimal superconductivity is closely related to quantum fluctuations and the nearby electronic nematic phase.

High-temperature superconductivity occurs near antiferromagnetic instabilities and nematic state. Debate remains on the origin of nematic order in FeSe and its relation with superconductivity. Here, we use transport, neutron scatter- ing and Fermi surface measurements to demonstrate that hydro-thermo grown superconducting FeS, an isostructure of FeSe, is a tetragonal paramagnet without nematic order and with a quasiparticle mass significantly reduced from that of FeSe. Only stripe-type spin excitation is observed up to 100 meV. No direct coupling between spin excitation and superconductivity in FeS is found, suggesting that FeS is less correlated and the nematic order in FeSe is due to competing checkerboard and stripe spin fluctuations.

We investigated long-wavelength nematic fluctuations in an Fe-based superconductor LiFeAs near q=(0.05,0,0) by measuring temperature-dependent renormalization of acoustic phonons through inelastic neutron scattering. We found that the phonons have conventional behavior, as would be expected in the absence of electronic nematic fluctuations. This observation implies that either electron-phonon coupling is too weak to see any effect or that nematic fluctuations are not present.

Chiral anomaly, a non-conservation of chiral charge pumped by the topological nontrivial gauge fields, has been predicted to exist in Weyl semimetals. However, until now, the experimental signature of this effect exclusively relies on the observation of negative longitudinal magnetoresistance at low temperatures. Here, we report the field-modulated chiral charge pumping process and valley diffusion in Cd3As2. Apart from the conventional negative magnetoresistance, we observe an unusual nonlocal response with negative field dependence up to room temperature, originating from the diffusion of valley polarization. Furthermore, a large magneto-optic Kerr effect generated by parallel electric and magnetic fields is detected. These new experimental approaches provide a quantitative analysis of the chiral anomaly phenomenon which is inaccessible previously. The ability to manipulate the valley polarization in topological semimetal at room temperature opens up a brand-new route towards understanding its fundamental properties and utilizing the chiral fermions.

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe unveil high sensitivity and tunable responsivity to visible light. However, the device yield and the repeatability call for a further improvement of the 2D materials to render large-scale uniformity. Here we report a layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics, photoresponse with a maximum photoresponsivity of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The photocurrent reaches saturation fast enough to capture a time constant of 22 {\mu}s and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photo-images were acquired by the GaTe/Si photodiodes with a reasonable contrast and spatial resolution, demonstrating for the first time the potential of integrating the 2D materials with the silicon technology for novel optoelectronic devices.

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial progress has been made in improving device performance, the existence of metal-semiconductor Schottky barrier has not yet been fully understood. Here, we investigate permalloy (Py) contacts to both multilayer and monolayer MoS2. Ohmic contact is developed between multilayer MoS2 and Py electrodes with a negative Schottky barrier, which yields a high field-effect mobility exceeding 55 cm2V-1s-1 at low temperature. Further, by applying back gate voltage and inserting different thickness of Al2O3 layer between the metal and monolayer MoS2, we have achieved a good tunability of the Schottky barrier height (down to zero). These results are important in improving the performance of MoS2 transistor devices; and it may pave the way to realize spin transport and spin injection in MoS2.

Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, we report on the fabrication of ReS2 field-effect transistors via the encapsulation of ReS2 nanosheets in a high-\k{appa} Al2O3 dielectric environment. Low-temperature transport measurements allowed us to observe a direct metal-to-insulator transition originating from strong electron-electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate-tunable photoresponsivity up to 16.14 A/W and external quantum efficiency reaching 3,168 %, showing a competitive device performance to those reported in graphene, MoSe2, GaS and GaSe-based photodetectors. Our study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics.

Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Extensive efforts have been devoted to the understanding of bulk materials, but yet it remains a challenge to explore the intriguing physics in low-dimensional Dirac semimetals. Here, we report on the synthesis of Cd3As2 nanowires and nanobelts and a systematic investigation of their magnetotransport properties. Temperature-dependent ambipolar behavior is evidently demonstrated, suggesting the presence of finite-size of bandgap in nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of the Fermi sphere owing to the suppression of the dimensionality. More importantly, their SdH oscillations can be effectively tuned by the gate voltage. The successful synthesis of Cd3As2 nanostructures and their rich physics open up exciting nanoelectronic applications of 3D Dirac semimetals.

Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their novel physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. More importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 104, far beyond Si-based flash memory, which allows for multi-bit information storage. Furthermore, the device shows a high mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable retention of ~28% charge loss after 10 years which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-\k charge-trap gate stacks opens up an exciting field of novel nonvolatile memory devices.