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Recently, Weyl semimetals have been experimentally discovered in both
inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The
non-trivial topology in Weyl semimetals can manifest itself with exotic
phenomena which have been extensively investigated by photoemission and
transport measurements. Despite the numerous experimental efforts on Fermi arcs
and chiral anomaly, the existence of unconventional zeroth Landau levels, as a
unique hallmark of Weyl fermions which is highly related to chiral anomaly,
remains elusive owing to the stringent experimental requirements. Here, we
report the magneto-optical study of Landau quantization in Weyl semimetal NbAs.
High magnetic fields drive the system towards the quantum limit which leads to
the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes.
As compared to other Landau levels, the zeroth chiral Landau level exhibits a
distinct linear dispersion in z momentum direction and allows the optical
transitions without the limitation of zero z momentum or square root of
magnetic field evolution. The magnetic field dependence of the zeroth Landau
levels further verifies the predicted particle-hole asymmetry of the Weyl
cones. Meanwhile, the optical transitions from the normal Landau levels exhibit
the coexistence of multiple carriers including an unexpected massive Dirac
fermion, pointing to a more complex topological nature in
inversion-symmetry-breaking Weyl semimetals. Our results provide insights into
the Landau quantization of Weyl fermions and demonstrate an effective tool for
studying complex topological systems.
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Muon spin rotation and relaxation studies have been performed on a "111"
family of iron-based superconductors NaFe_1-xNi_xAs. Static magnetic order was
characterized by obtaining the temperature and doping dependences of the local
ordered magnetic moment size and the volume fraction of the magnetically
ordered regions. For x = 0 and 0.4 %, a transition to a nearly-homogeneous long
range magnetically ordered state is observed, while for higher x than 0.4 %
magnetic order becomes more disordered and is completely suppressed for x = 1.5
%. The magnetic volume fraction continuously decreases with increasing x. The
combination of magnetic and superconducting volumes implies that a
spatially-overlapping coexistence of magnetism and superconductivity spans a
large region of the T-x phase diagram for NaFe_1-xNi_xAs . A strong reduction
of both the ordered moment size and the volume fraction is observed below the
superconducting T_C for x = 0.6, 1.0, and 1.3 %, in contrast to other iron
pnictides in which one of these two parameters exhibits a reduction below TC,
but not both. The suppression of magnetic order is further enhanced with
increased Ni doping, leading to a reentrant non-magnetic state below T_C for x
= 1.3 %. The reentrant behavior indicates an interplay between
antiferromagnetism and superconductivity involving competition for the same
electrons. These observations are consistent with the sign-changing s-wave
superconducting state, which is expected to appear on the verge of microscopic
coexistence and phase separation with magnetism. We also present a universal
linear relationship between the local ordered moment size and the
antiferromagnetic ordering temperature TN across a variety of iron-based
superconductors. We argue that this linear relationship is consistent with an
itinerant-electron approach, in which Fermi surface nesting drives
antiferromagnetic ordering.
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We investigate Cu-doped Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ with transport,
magnetic susceptibility, and elastic neutron scattering measurements. In the
heavily Cu-doped regime where long-range stripe-type antiferromagnetic order in
BaFe$_2$As$_2$ is suppressed, Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ (0.145 $\leq x
\leq$ 0.553) samples exhibit spin-glass-like behavior in magnetic
susceptibility and insulating-like temperature dependence in electrical
transport. Using elastic neutron scattering, we find stripe-type short-range
magnetic order in the spin-glass region identified by susceptibility
measurements. The persistence of short-range magnetic order over a large doping
range in Ba(Fe$_{1-x}$Cu$_x$)$_2$As$_2$ likely arises from local arrangements
of Fe and Cu that favor magnetic order, with Cu acting as vacancies relieving
magnetic frustration and degeneracy. These results indicate locally broken
four-fold rotational symmetry, suggesting that stripe-type magnetism is
ubiquitous in iron pnictides.
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Owing to the coupling between open Fermi arcs on opposite surfaces,
topological Dirac semimetals exhibit a new type of cyclotron orbit in the
surface states known as Weyl orbit. Here, by lowering the carrier density in
Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency
Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic
field, indicating the dominant role of surface transport. With the increase of
magnetic field, the SdH oscillations further develop into quantum Hall state
with non-vanishing longitudinal resistance. By tracking the oscillation
frequency and Hall plateau, we observe a Zeeman-related splitting and extract
the Landau level index as well as sub-band number. Different from conventional
two-dimensional systems, this unique quantum Hall effect may be related to the
quantized version of Weyl orbits. Our results call for further investigations
into the exotic quantum Hall states in the low-dimensional structure of
topological semimetals.
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We use neutron polarization analysis to study temperature dependence of the
spin excitation anisotropy in BaFe$_2$As$_2$, which has a
tetragonal-to-orthorhombic structural distortion at $T_s$ and antiferromagnetic
(AF) phase transition at $T_N$ with ordered moments along the orthorhombic
$a$-axis below $T_s\approx T_N\approx 136$ K. In the paramagnetic tetragonal
state at 160 K, spin excitations are isotropic in spin space with
$M_a=M_b=M_c$, where $M_a$, $M_b$, and $M_c$ are spin excitations polarized
along the $a$, $b$, and $c$-axis directions of the orthorhombic lattice,
respectively. On cooling towards $T_N$, significant spin excitation anisotropy
with $M_a>M_b\approx M_c$ develops below 3 meV with a diverging $M_a$ at $T_N$.
The in-plane spin excitation anisotropy in the tetragonal phase of
BaFe$_2$As$_2$ is similar to those seen in the tetragonal phase of its electron
and hole-doped superconductors, suggesting that spin excitation anisotropy is a
direct probe of doping dependence of spin-orbit coupling and its connection to
superconductivity in iron pnictides.
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We use neutron scattering to study the electron-doped superconducting
NaFe$_{0.985}$Co$_{0.015}$As ($T_c=14$ K), which has co-existing static
antiferromagnetic (AF) order ($T_N=31$ K) and exhibits two neutron spin
resonances ($E_{r1}\approx 3.5$ meV and $E_{r2}\approx 6$ meV) at the in-plane
AF ordering wave vector ${\bf Q}_{\rm AF}={\bf Q}_{1}=(1,0)$ in reciprocal
space. In the twinned state below the tetragonal-to-orthorhombic structural
transition $T_s$, both resonance modes appear at ${\bf Q}_{1}$ but cannot be
distinguished from ${\bf Q}_{2}=(0,1)$. By detwinning the single crystal with
uniaxial pressure along the orthorhombic $b$-axis, we find that both resonances
appear only at ${\bf Q}_{1}$ with vanishing intensity at ${\bf Q}_{2}$. Since
electronic bands of the orbital $d_{xz}$ and $d_{yz}$ characters split below
$T_s$ with the $d_{xz}$ band sinking $\sim10$ meV below the Fermi surface, our
results indicate that the neutron spin resonances in
NaFe$_{0.985}$Co$_{0.015}$As arise mostly from quasi-particle excitations
between the hole and electron Fermi surfaces with the $d_{yz}$ orbital
character.
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We use neutron diffraction and muon spin relaxation to study the effect of
in-plane uniaxial pressure on the antiferromagnetic (AF) orthorhombic phase in
BaFe$_2$As$_2$ and its Co- and Ni-substituted members near optimal
superconductivity. In the low temperature AF ordered state, uniaxial pressure
necessary to detwin the orthorhombic crystals also increases the magnetic
ordered moment, reaching an 11$\%$ increase under 40 MPa for
BaFe$_{1.9}$Co$_{0.1}$As$_2$, and a 15$\%$ increase for
BaFe$_{1.915}$Ni$_{0.085}$As$_2$. We also observe an increase of the AF
ordering temperature ($T_N$) of about 0.25 K/MPa in all compounds, consistent
with density functional theory calculations that reveal better Fermi surface
nesting for itinerant electrons under uniaxial pressure. The doping dependence
of the magnetic ordered moment is captured by combining dynamical mean field
theory with density functional theory, suggesting that the pressure-induced
moment increase near optimal superconductivity is closely related to quantum
fluctuations and the nearby electronic nematic phase.
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High-temperature superconductivity occurs near antiferromagnetic
instabilities and nematic state. Debate remains on the origin of nematic order
in FeSe and its relation with superconductivity. Here, we use transport,
neutron scatter- ing and Fermi surface measurements to demonstrate that
hydro-thermo grown superconducting FeS, an isostructure of FeSe, is a
tetragonal paramagnet without nematic order and with a quasiparticle mass
significantly reduced from that of FeSe. Only stripe-type spin excitation is
observed up to 100 meV. No direct coupling between spin excitation and
superconductivity in FeS is found, suggesting that FeS is less correlated and
the nematic order in FeSe is due to competing checkerboard and stripe spin
fluctuations.
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We investigated long-wavelength nematic fluctuations in an Fe-based
superconductor LiFeAs near q=(0.05,0,0) by measuring temperature-dependent
renormalization of acoustic phonons through inelastic neutron scattering. We
found that the phonons have conventional behavior, as would be expected in the
absence of electronic nematic fluctuations. This observation implies that
either electron-phonon coupling is too weak to see any effect or that nematic
fluctuations are not present.
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Chiral anomaly, a non-conservation of chiral charge pumped by the topological
nontrivial gauge fields, has been predicted to exist in Weyl semimetals.
However, until now, the experimental signature of this effect exclusively
relies on the observation of negative longitudinal magnetoresistance at low
temperatures. Here, we report the field-modulated chiral charge pumping process
and valley diffusion in Cd3As2. Apart from the conventional negative
magnetoresistance, we observe an unusual nonlocal response with negative field
dependence up to room temperature, originating from the diffusion of valley
polarization. Furthermore, a large magneto-optic Kerr effect generated by
parallel electric and magnetic fields is detected. These new experimental
approaches provide a quantitative analysis of the chiral anomaly phenomenon
which is inaccessible previously. The ability to manipulate the valley
polarization in topological semimetal at room temperature opens up a brand-new
route towards understanding its fundamental properties and utilizing the chiral
fermions.
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Vertically stacking two dimensional (2D) materials can enable the design of
novel electronic and optoelectronic devices and realize complex functionality.
However, the fabrication of such artificial heterostructures in wafer scale
with an atomically-sharp interface poses an unprecedented challenge. Here, we
demonstrate a convenient and controllable approach for the production of
wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection
high-energy electron diffraction oscillations and Raman spectroscopy reveal a
layer-by-layer van der Waals epitaxial growth mode. Highly-efficient
photodetector arrays were fabricated based on few-layer GaSe on Si. These
photodiodes show steady rectifying characteristics and a relatively high
external quantum efficiency of 23.6%. The resultant photoresponse is super-fast
and robust with a response time of 60 us. Importantly, the device shows no sign
of degradation after 1 million cycles of operation. Our study establishes a new
approach to produce controllable, robust and large-area 2D heterostructures and
presents a crucial step for further practical applications.
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Two-dimensional (2D) materials have attracted substantial attention in
electronic and optoelectronic applications with superior advantages of being
flexible, transparent and highly tunable. Gapless graphene exhibits
ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and
GaTe unveil high sensitivity and tunable responsivity to visible light.
However, the device yield and the repeatability call for a further improvement
of the 2D materials to render large-scale uniformity. Here we report a
layer-by-layer growth of wafer-scale GaTe with a hole mobility of 28.4 cm2/Vs
by molecular beam epitaxy. The arrayed p-n junctions were developed by growing
few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal
good rectifying characteristics, photoresponse with a maximum photoresponsivity
of 2.74 A/W and a high photovoltaic external quantum efficiency up to 62%. The
photocurrent reaches saturation fast enough to capture a time constant of 22
{\mu}s and shows no sign of device degradation after 1.37 million cycles of
operation. Most strikingly, such high performance has been achieved across the
entire wafer, making the volume production of devices accessible. Finally,
several photo-images were acquired by the GaTe/Si photodiodes with a reasonable
contrast and spatial resolution, demonstrating for the first time the potential
of integrating the 2D materials with the silicon technology for novel
optoelectronic devices.
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Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have
been recently proposed as appealing candidate materials for spintronic
applications owing to their distinctive atomic crystal structure and exotic
physical properties arising from the large bonding anisotropy. Here we
introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the
nonmagnetic spacer. In contrast with what expected from the semiconducting
band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic
behavior. This originates from their strong hybridization with the Ni and Fe
atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to
240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures.
The experimental work is accompanied by the first principle electron transport
calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our
results clearly identify TMDs as a promising spacer compound in magnetic tunnel
junctions and may open a new avenue for the TMDs-based spintronic applications.
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MoS2 is a layered two-dimensional material with strong spin-orbit coupling
and long spin lifetime, which is promising for electronic and spintronic
applications. However, because of its large band gap and small electron
affinity, a considerable Schottky barrier exists between MoS2 and contact
metal, hindering the further study of spin transport and spin injection in
MoS2. Although substantial progress has been made in improving device
performance, the existence of metal-semiconductor Schottky barrier has not yet
been fully understood. Here, we investigate permalloy (Py) contacts to both
multilayer and monolayer MoS2. Ohmic contact is developed between multilayer
MoS2 and Py electrodes with a negative Schottky barrier, which yields a high
field-effect mobility exceeding 55 cm2V-1s-1 at low temperature. Further, by
applying back gate voltage and inserting different thickness of Al2O3 layer
between the metal and monolayer MoS2, we have achieved a good tunability of the
Schottky barrier height (down to zero). These results are important in
improving the performance of MoS2 transistor devices; and it may pave the way
to realize spin transport and spin injection in MoS2.
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Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides
(TMDs) have been extensively studied in recent years because of their appealing
electrical and optical properties. Here, we report on the fabrication of ReS2
field-effect transistors via the encapsulation of ReS2 nanosheets in a
high-\k{appa} Al2O3 dielectric environment. Low-temperature transport
measurements allowed us to observe a direct metal-to-insulator transition
originating from strong electron-electron interactions. Remarkably, the
photodetectors based on ReS2 exhibit gate-tunable photoresponsivity up to 16.14
A/W and external quantum efficiency reaching 3,168 %, showing a competitive
device performance to those reported in graphene, MoSe2, GaS and GaSe-based
photodetectors. Our study unambiguously distinguishes ReS2 as a new candidate
for future applications in electronics and optoelectronics.
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Three-dimensional (3D) topological Dirac semimetal is a new kind of material
that has a linear energy dispersion in 3D momentum space and can be viewed as
an analog of graphene. Extensive efforts have been devoted to the understanding
of bulk materials, but yet it remains a challenge to explore the intriguing
physics in low-dimensional Dirac semimetals. Here, we report on the synthesis
of Cd3As2 nanowires and nanobelts and a systematic investigation of their
magnetotransport properties. Temperature-dependent ambipolar behavior is
evidently demonstrated, suggesting the presence of finite-size of bandgap in
nanowires. Cd3As2 nanobelts, however, exhibit metallic characteristics with a
high carrier mobility exceeding 32,000 cm2V-1s-1 and pronounced anomalous
double-period Shubnikov-de Haas (SdH) oscillations. Unlike the bulk
counterpart, the Cd3As2 nanobelts reveal the possibility of unusual change of
the Fermi sphere owing to the suppression of the dimensionality. More
importantly, their SdH oscillations can be effectively tuned by the gate
voltage. The successful synthesis of Cd3As2 nanostructures and their rich
physics open up exciting nanoelectronic applications of 3D Dirac semimetals.
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Charge-trap memory with high-\k dielectric materials is considered to be a
promising candidate for next-generation memory devices. Ultrathin layered
two-dimensional (2D) materials like graphene and MoS2 have been receiving much
attention because of their novel physical properties and potential applications
in electronic devices. Here, we report on a dual-gate charge-trap memory device
composed of a few-layer MoS2 channel and a three-dimensional (3D)
Al2O3/HfO2/Al2O3 charge-trap gate stack. Owing to the extraordinary trapping
ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an
unprecedented memory window exceeding 20 V. More importantly, with a back gate
the window size can be effectively tuned from 15.6 to 21 V; the program/erase
current ratio can reach up to 104, far beyond Si-based flash memory, which
allows for multi-bit information storage. Furthermore, the device shows a high
mobility of 170 cm2V-1s-1, a good endurance of hundreds of cycles and a stable
retention of ~28% charge loss after 10 years which is drastically lower than
ever reported MoS2 flash memory. The combination of 2D materials with
traditional high-\k charge-trap gate stacks opens up an exciting field of novel
nonvolatile memory devices.