• The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and less cost than that of organic counterparts. Here we report an all-inorganic QLED with excellent efficiency by modifying the solution-processed NiO (s-NiO) surface with an ultrathin Al2O3 passivating layer. The localized electric field induced by nickel oxyhydroxide (NiOOH) is estimated to be ~ 70 MV/cm at a distance of 6 nm from the surface of s-NiO layer. Both transient resolution photoluminescence (TRPL) and X-Ray photoelectron spectroscopy (XPS) measurements demonstrate that the Al2O3 passivating layer can effectively passivate the NiOOH on the s-NiO surface, hence suppressing the exciton quenching. As a result, over 800% efficiency enhancement up to 34.1 cd/A (8.1%) for the current efficiency (external quantum efficiency, EQE) of the QLEDs is achieved. To the best of our knowledge, this is the best-performing all-inorganic QLED so far.
  • Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performance light emitting didoes. In this work, we reported the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes (ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT:PSS/Al). By combining the time-resolved photoluminescence, transient electroluminescence and ultraviolet photoelectron spectrometer measurements, the enhancement can be explained to the internal field enhanced exciton coupling to surface plasmons and the increased electron injection rate with Au nanoparticles incorporation. Phenomenological numerical calculations indicated that the electron mobility of the electron transport layer was increased from 1.39x10-5 to 1.91x10-5 cm2/V.s for Au NPs modified devices. As a result, the maximum device luminescence is enhanced by 1.41 folds from 14,600 to 20,720 cd/cm2 and maximum current efficiency is improved by 1.29 folds from 3.12 to 4.02 cd/A.
  • This work reports our effort on understanding the efficiency roll-off in blue phosphorescent organic light-emitting diodes (OLEDs), based on a blue phosphorescence from bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl)- iridium (FIrpic) doped in 4,4-N,N-dicarbazole-biphenyl (CBP) host. The performance of a set of blue phosphorescent OLEDs with different FIrpic dopant concentrations was analyzed. Phosphorescent OLEDs, having a 30 nm thick pure FIrpic emissive layer, with a high luminous efficiency of 7.76 cd/A at 100 mA/cm2 was obtained. Theoretical calculation, based on the density functional theory, reveals that the exciton self-quenching process is suppressed due to the strong Coulomb repulsion between FIrpic molecules. It is found that the efficiency roll-off in FIrpic-based OLEDs is closely related to the exciton quenching induced by the CBP+ radical cations that are present in the CBP host.