
We probe ultrastrong light matter coupling between metallic terahertz
metasurfaces and Landaulevel transitions in high mobility 2D electron and hole
gases. We utilize heavyhole cyclotron resonances in strained Ge and electron
cyclotron resonances in InSb quantum wells, both within highly nonparabolic
bands, and compare our results to well known parabolic AlGaAs/GaAs quantum well
(QW) systems. Tuning the coupling strength of the system by two methods,
lithographically and by optical pumping, we observe a novel behavior clearly
deviating from the standard Hopfield model previously verified in cavity
quantum electrodynamics: an opening of a lower polaritonic gap.

The interaction between electrons in arrays of electrostatically defined
quantum dots is naturally described by a FermiHubbard Hamiltonian. Moreover,
the high degree of tunability of these systems make them a powerful platform to
simulate different regimes of the Hubbard model. However, most quantum dot
array implementations have been limited to onedimensional linear arrays. In
this letter, we present a square lattice unit cell of 2$\times$2 quantum dots
defined electrostatically in a AlGaAs/GaAs heterostructure using a doublelayer
gate technique. We probe the properties of the array using nearby quantum dots
operated as charge sensors. We show that we can deterministically and
dynamically control the charge occupation in each quantum dot in the single to
fewelectron regime. Additionally, we achieve simultaneous individual control
of the nearestneighbor tunnel couplings over a range 040~$\mu$eV. Finally, we
demonstrate fast ($\sim 1$~$\mu$s) singleshot readout of the spin state of
electrons in the dots, through spintocharge conversion via Pauli spin
blockade. These advances pave the way to analog quantum simulations in two
dimensions, not previously accessible in quantum dot systems.

Nonperturbative coupling between cavity photons and excitons leads to
formation of hybrid lightmatter excitations termed polaritons. In structures
where photon absorption leads to creation of excitons with aligned permanent
dipoles, the elementary excitations, termed dipolar polaritons, are expected to
exhibit enhanced interactions. Here, we report a substantial increase in
interaction strength between dipolar polaritons as the size of the dipole is
increased by tuning the applied gate voltage. To this end, we use coupled
quantum well structures embedded inside a microcavity where coherent electron
tunneling between the wells controls the size of the excitonic dipole.
Modifications of the interaction strength are characterized by measuring the
changes in the reflected intensity of light when polaritons are driven with a
resonant laser. Factor of 6.5 increase in the interaction strength to linewidth
ratio that we obtain indicates that dipolar polaritons could be used to
demonstrate a polariton blockade effect and thereby form the building blocks of
manybody states of light.

Scalable architectures for quantum information technologies require to
selectively couple longdistance qubits while suppressing environmental noise
and crosstalk. In semiconductor materials, the coherent coupling of a single
spin on a quantum dot to a cavity hosting fermionic modes offers a new solution
to this technological challenge. Here, we demonstrate coherent coupling between
two spatially separated quantum dots using an electronic cavity design that
takes advantage of whisperinggallery modes in a twodimensional electron gas.
The cavitymediated longdistance coupling effectively minimizes undesirable
direct crosstalk between the dots and defines a scalable architecture for
allelectronic semiconductorbased quantum information processing.

The spinflip tunneling rates are measured in GaAsbased double quantum dots
by timeresolved charge detection. Such processes occur in the Pauli spin
blockade regime with two electrons occupying the double quantum dot. Ways are
presented for tuning the spinflip tunneling rate, which on the one hand gives
access to measuring the Rashba and Dresselhaus spinorbit coefficents. On the
other hand they make it possible to turn on and off the effect of SOI with a
high on/offratio. The tuning is accomplished by choosing the alignment of the
tunneling direction with respect to the crystallographic axes, as well as by
choosing the orientation of the external magnetic field with respect to the
spinorbit magnetic field. Spinlifetimes of 10 s are achieved at a tunnel
rate close to 1 kHz.

Elementary quasiparticles in a two dimensional electron system can be
described as excitonpolarons since electronexciton interactions ensures
dressing of excitons by Fermisea electronhole pair excitations. A relevant
open question is the modification of this description when the electrons occupy
flatbands and electronelectron interactions become prominent. Here, we
perform cavity spectroscopy of a two dimensional electron system in the
strongcoupling regime where polariton resonances carry signatures of strongly
correlated quantum Hall phases. By measuring the evolution of the polariton
splitting under an external magnetic field, we demonstrate the modification of
electronexciton interactions that we associate with phase space filling at
integer filling factors and polaron dressing at fractional filling factors. The
observed nonlinear behavior shows great promise for enhancing
polaritonpolariton interactions.

We investigate different methods of passivating sidewalls of wet etched InAs
heterostructures in order to suppress inherent edge conduction that is presumed
to occur due to band bending at the surface leading to charge carrier
accumulation. Passivation techniques including sulfur, positively charged
compensation dopants and plasma enhanced chemical vapor deposition of
$\mathrm{SiN}_{\mathrm{x}}$ do not show an improvement. Surprisingly, atomic
layer deposition of $\mathrm{Al}_{\mathrm{2}}\mathrm{O}_{\mathrm{3}}$ leads to
an increase in edge resistivity of more than an order of magnitude. While the
mechanism behind this change is not fully understood, possible reasons are
suggested.

We investigate lowtemperature transport through single InAs quantum wells
and brokengap InAs/GaSb double quantum wells. Nonlocal measurements in the
regime beyond bulk pinchoff confirm the presence of edge conduction in InAs
quantum wells. The edge resistivity of 12 $\mathrm{k\Omega/\mu m}$ is of the
same order of magnitude as edge resistivities measured in the InAs/GaSb double
quantum well system. Measurements in tilted magnetic field suggests an
anisotropy of the conducting regions at the edges with a larger extent in the
plane of the sample than normal to it. Finger gate samples on both material
systems shine light on the length dependence of the edge resistance with the
intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum
wells.

We present transport measurements on a lateral pn junction in an inverted
InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic
fields. At a zero magnetic field, the junction exhibits diodelike behavior in
accordance with the presence of a hybridization gap. With an increasing
magnetic field, we explore the quantum Hall regime where spinpolarized edge
states with the same chirality are either reflected or transmitted at the
junction, whereas those of opposite chirality undergo a mixing process, leading
to full equilibration along the width of the junction independent of spin.
These results lay the foundations for using pn junctions in InAs/GaSb double
quantum wells to probe the transition between the topological quantum spin Hall
and quantum Hall states.

We report a precise experimental study on the shot noise of a quantum point
contact (QPC) fabricated in a GaAs/AlGaAs based highmobility twodimensional
electron gas (2DEG). The combination of unprecedented cleanliness and very high
measurement accuracy has enabled us to discuss the Fano factor to characterize
the shot noise with a precision of 1 %. We observed that the shot noise at zero
magnetic field exhibits a slight enhancement exceeding the single particle
theoretical prediction, and that it gradually decreases as a perpendicular
magnetic field is applied. We also confirmed that this additional noise
completely vanishes in the quantum Hall regime. These phenomena can be
explained by the electron heating effect near the QPC, which is suppressed with
increasing magnetic field.

We report on the detection of the intrinsic spin Hall effect in a modulation
doped AlGaAs/GaAs/AlGaAs heterostructure bounded by a selfaligned
pnjunction, fabricated by the cleaved edge overgrowth method. Light emission
due to the recombination of electrons and spinpolarized holes was generated
and mapped with a spatial resolution of one micrometer. An edge accumulated
spin polarization of up to 11% was measured, induced solely by application of
an electric Field perpendicular to the pnjunction. Using a quantum dot
structure as light source, a linear dependence of the effective spin
polarization, and with that the dominance of the spin Hall effect, with the
electric field is seen. Spatially resolved spectroscopy from an epitaxially
fabricated LED is demonstrated to be a valuable tool to probe the edge states
of electron and hole gases in reduced dimensions.

Twoelectron charged selfassembled quantum dot molecules exhibit a
decoherenceavoiding singlettriplet qubit subspace and an efficient
spinphoton interface. We demonstrate quantum entanglement between emitted
photons and the spinqubit after the emission event. We measure the overlap
with a fully entangled state to be $69.5\pm2.7\,\%$, exceeding the threshold of
$50\,\%$ required to prove the nonseparability of the density matrix of the
system. The photonic qubit is encoded in two photon states with an energy
difference larger than the timing resolution of existing detectors. We devise a
novel heterodyne detection method, enabling projective measurements of such
photonic color qubits along any direction on the Bloch sphere.

We measure tunnelling currents through electrostatically defined quantum dots
in a GaAs/AlGaAs heterostructure connected to two leads. For certain tunnelling
barrier configurations and high sample bias we find a pronounced resonance
associated with a Fermi edge singularity. This manybody scattering effect
appears when the electrochemical potential of the quantum dot is aligned with
the Fermi level of the lead less coupled to the dot. By changing the relative
tunnelling barrier strength we are able to tune the interaction of the
localised electron with the Fermi sea.

Scanning gate microscopy measurements in a circular ballistic cavity with a
tip placed near its center yield a nonmonotonic dependence of the conductance
on the tip voltage. Detailed numerical quantum calculations reproduce these
conductance oscillations, and a classical scheme leads to its physical
understanding. The largeamplitude conductance oscillations are shown to be of
classical origin, and well described by the effect of a particular class of
short trajectories.

The strong coupling limit of cavity quantum electrodynamics (QED) implies the
capability of a matterlike quantum system to coherently transform an
individual excitation into a single photon within a resonant structure. This
not only enables essential processes required for quantum information
processing but also allows for fundamental studies of matterlight interaction.
In this work we demonstrate strong coupling between the charge degree of
freedom in a gatedetuned GaAs double quantum dot (DQD) and a frequencytunable
high impedance resonator realized using an array of superconducting quantum
interference devices (SQUIDs). In the resonant regime, we resolve the vacuum
Rabi mode splitting of size $2g/2\pi = 238$ MHz at a resonator linewidth
$\kappa/2\pi = 12$ MHz and a DQD charge qubit dephasing rate of $\gamma_2/2\pi
= 80$ MHz extracted independently from microwave spectroscopy in the dispersive
regime. Our measurements indicate a viable path towards using circuit based
cavity QED for quantum information processing in semiconductor nanostructures.

Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are
probed by a complementary approach of emission spectroscopy and resonant
inelastic light scattering. Lateral electrostatic trap geometries are used to
create dense systems of spatially indirect excitons and excess holes with
similar densities in the order of 10$^{11}$ cm$^{2}$. Inelastic light
scattering spectra reveal a very sharp lowlying collective mode that is
identified at an energy of 0.44 meV and a FWHM of only ~50 $\mu$eV. This mode
is interpreted as a plasmon excitation of the excess hole system coupled to the
photogenerated indirect excitons. The emission energy of the indirect excitons
shifts under the application of a perpendicular applied electric field with the
quantumconfined Stark effect unperturbed from the presence of free charge
carriers. Our results illustrate the potential of studying lowlying collective
excitations in photogenerated exciton systems to explore the manybody phase
diagram, related phase transitions, and interaction physics.

Transport measurements are performed on InAs/GaSb double quantum wells at
zero and finite magnetic fields applied parallel and perpendicular to the
quantum wells. We investigate a sample in the inverted regime where electrons
and holes coexist, and compare it with another sample in the noninverted
semiconducting regime. Activated behavior in conjunction with a strong
suppression of the resistance peak at the charge neutrality point in a parallel
magnetic field attest to the topological hybridization gap between electron and
hole bands in the inverted sample. We observe an unconventional Landau level
spectrum with energy gaps modulated by the magnetic field applied perpendicular
to the quantum wells. This is caused by strong spinorbit interaction provided
jointly by the InAs and the GaSb quantum wells.

We report on a combined photoluminescence imaging and atomic force microscopy
study of single, isolated selfassembled InAs quantum dots (density <0.01
um^(2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining
optical and scanning probe characterization techniques, we determine the
position of single quantum dots with respect to comparatively large (100 nm to
1000 nm inplane dimension) topographic features. We find that quantum dots
often appear (>25% of the time) in the vicinity of these features, but
generally do not exhibit significant differences in their nonresonantly pumped
emission spectra in comparison to quantum dots appearing in defectfree
regions. This behavior is observed across multiple wafers produced in different
growth chambers. Our characterization approach is relevant to applications in
which single quantum dots are embedded within nanofabricated photonic devices,
where such large surface features can affect the interaction with confined
optical fields and the quality of the singlephoton emission. In particular, we
anticipate using this approach to screen quantum dots not only based on their
optical properties, but also their surrounding surface topographies.

Cavity photon resonators with ultrastrong lightmatter interactions are
attracting interest both in semiconductor and superconducting systems
displaying the capability to manipulate the cavity quantum electrodynamic
ground state with controllable physical properties. Here we review a series of
experiments aimed at probing the ultrastrong lightmatter coupling regime,
where the vacuum Rabi splitting $\Omega$ is comparable to the bare transition
frequency $\omega$ . We present a new platform where the interLandau level
transition of a twodimensional electron gas (2DEG) is strongly coupled to the
fundamental mode of deeply subwavelength splitring resonators operating in the
mmwave range. Recordhigh values of the normalized lightmatter coupling ratio
$\frac{\Omega}{\omega}= 0.89$ are reached and the system appears highly
scalable far into the microwave range.

While thermodynamics is a useful tool to describe the driving of large
systems close to equilibrium, fluctuations dominate the distribution of heat
and work in small systems and far from equilibrium. We study the heat generated
by driving a small system and change the drive parameters to analyse the
transition from a drive leaving the system close to equilibrium to driving it
far from equilibrium. Our system is a quantum dot in a GaAs/AlGaAs
heterostructure hosting a twodimensional electron gas. The dot is
tunnelcoupled to one part of the twodimensional electron gas acting as a heat
and particle reservoir. We use standard rate equations to model the driven
dotreservoir system and find excellent agreement with the experiment.
Additionally, we quantify the fluctuations by experimentally test the
theoretical concept of the arrow of time, predicting our ability to distinguish
whether a process goes in the forward or backward drive direction.

We present a gating scheme to separate even strong parallel conductance from
the magnetotransport signatures and properties of a twodimensional electron
system. By varying the electron density in the parallel conducting layer, we
can study the impact of mobile charge carriers in the vicinity of the dopant
layer on the properties of the twodimensional electron system. It is found
that the parallel conducting layer is indeed capable to screen the remote
ionized impurity potential fluctuations responsible for the fragility of
fractional quantum Hall states.

Electronhole hybridization in InAs/GaSb double quantum well structures leads
to the formation of a mini band gap. We experimentally and theoretically
studied the impact of strain on the transport properties of this material
system. Thinned samples were mounted to piezo electric elements to exert strain
along the [011] and [001] crystal directions. When the Fermi energy is tuned
through the mini gap, a dramatic impact on the resistivity at the charge
neutrality point is found which depends on the amount of applied external
strain. In the electron and hole regimes, strain influences the Landau level
structure. By analyzing the intrinsic strain from the epitaxial growth, the
external strain from the piezo elements and combining our experimental results
with numerical simulations of strained and unstrained quantum wells, we
compellingly illustrate why the InAs/GaSb material system is regularly found to
be semimetallic.

We demonstrate an experimental method for measuring quantum state
degeneracies in bound state energy spectra. The technique is based on the
general principle of detailed balance, and the ability to perform precise and
efficient measurements of energydependent tunnellingin and out rates from a
reservoir. The method is realized using a GaAs/AlGaAs quantum dot allowing for
the detection of timeresolved singleelectron tunnelling with a precision
enhanced by a feedbackcontrol. It is thoroughly tested by tuning orbital and
spindegeneracies with electric and magnetic fields. The technique also lends
itself for studying the connection between the ground state degeneracy and the
lifetime of the excited states.

We use the voltage biased tip of a scanning force microscope at a temperature
of 35\,mK to locally induce the fractional quantum Hall state of $\nu=1/3$ in a
splitgate defined constriction. Different tip positions allow us to vary the
potential landscape. From temperature dependence of the conductance plateau at
$G=1/3 \times e^2/h$ we determine the activation energy of this local $\nu=1/3$
state. We find that at a magnetic field of 6\,T the activation energy is
between 153\,$\mu$eV and 194\,$\mu$eV independent of the shape of the confining
potential, but about 50\% lower than for bulk samples.

In a quantum Hall ferromagnet, the spin polarization of the twodimensional
electron system can be dynamically transferred to nuclear spins in its vicinity
through the hyperfine interaction. The resulting nuclear field typically acts
back locally, modifying the local electronic Zeeman energy. Here we report a
nonlocal effect arising from the interplay between nuclear polarization and
the spatial structure of electronic domains in a $\nu=2/3$ fractional quantum
Hall state. In our experiments, we use a quantum point contact to locally
control and probe the domain structure of different spin configurations
emerging at the spin phase transition. Feedback between nuclear and electronic
degrees of freedom gives rise to memristive behavior, where electronic
transport through the quantum point contact depends on the history of current
flow. We propose a model for this effect which suggests a novel route to
studying edge states in fractional quantum Hall systems and may account for
sofar unexplained oscillatory electronictransport features observed in
previous studies.